JPS63102221A - 半導体装置の製造方法 - Google Patents

Info

Publication number

JPS63102221A

JPS63102221A JP24753086A JP24753086A JPS63102221A JP S63102221 A JPS63102221 A JP S63102221A JP 24753086 A JP24753086 A JP 24753086A JP 24753086 A JP24753086 A JP 24753086A JP S63102221 A JPS63102221 A JP S63102221A

Authority

JP

Japan

Prior art keywords

single crystal

island

polycrystalline silicon

reflection film

optical reflection

Prior art date

1986-10-20

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Granted

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• 239000004065 semiconductor Substances 0.000 title claims abstract description 45
• 238000004519 manufacturing process Methods 0.000 title claims description 10
• 239000013078 crystal Substances 0.000 claims abstract description 47
• 238000000034 method Methods 0.000 claims abstract description 26
• 238000000137 annealing Methods 0.000 claims abstract description 7
• 239000000758 substrate Substances 0.000 claims description 14
• 239000012212 insulator Substances 0.000 claims description 2
• 230000008018 melting Effects 0.000 claims description 2
• 238000002844 melting Methods 0.000 claims description 2
• 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 31
• 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 7
• 229910052581 Si3N4 Inorganic materials 0.000 abstract description 6
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract description 6
• 229910020968 MoSi2 Inorganic materials 0.000 abstract description 3
• 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
• 230000009977 dual effect Effects 0.000 abstract description 2
• 239000002184 metal Substances 0.000 abstract description 2
• 230000003287 optical effect Effects 0.000 abstract 4
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
• 238000001259 photo etching Methods 0.000 abstract 2
• 239000011248 coating agent Substances 0.000 abstract 1
• 238000000576 coating method Methods 0.000 abstract 1
• 229910052681 coesite Inorganic materials 0.000 abstract 1
• 229910052906 cristobalite Inorganic materials 0.000 abstract 1
• 239000000377 silicon dioxide Substances 0.000 abstract 1
• 235000012239 silicon dioxide Nutrition 0.000 abstract 1
• 229910052682 stishovite Inorganic materials 0.000 abstract 1
• 229910052905 tridymite Inorganic materials 0.000 abstract 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
• 229910052710 silicon Inorganic materials 0.000 description 8
• 239000010703 silicon Substances 0.000 description 8
• 238000002425 crystallisation Methods 0.000 description 6
• 230000008025 crystallization Effects 0.000 description 6
• 238000000206 photolithography Methods 0.000 description 4
• 229910016006 MoSi Inorganic materials 0.000 description 3
• 230000015572 biosynthetic process Effects 0.000 description 3
• 238000010586 diagram Methods 0.000 description 3
• 238000005516 engineering process Methods 0.000 description 3
• 230000000694 effects Effects 0.000 description 2
• 230000001678 irradiating effect Effects 0.000 description 2
• 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
• 238000000927 vapour-phase epitaxy Methods 0.000 description 2
• 238000001947 vapour-phase growth Methods 0.000 description 2
• 238000007796 conventional method Methods 0.000 description 1
• 230000006837 decompression Effects 0.000 description 1
• 238000010894 electron beam technology Methods 0.000 description 1
• 230000010354 integration Effects 0.000 description 1
• 238000002955 isolation Methods 0.000 description 1
• 239000000463 material Substances 0.000 description 1
• 238000010899 nucleation Methods 0.000 description 1