JPS6310000Y2 - - Google Patents

Info

Publication number

JPS6310000Y2

JPS6310000Y2 JP4560784U JP4560784U JPS6310000Y2 JP S6310000 Y2 JPS6310000 Y2 JP S6310000Y2 JP 4560784 U JP4560784 U JP 4560784U JP 4560784 U JP4560784 U JP 4560784U JP S6310000 Y2 JPS6310000 Y2 JP S6310000Y2

Authority

JP

Japan

Prior art keywords

dielectric layer

electrode

electrodes

light

layer

Prior art date

1984-03-29

Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)

Expired

Links

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• 230000002093 peripheral effect Effects 0.000 claims description 17
• 239000010409 thin film Substances 0.000 claims description 14
• 239000011159 matrix material Substances 0.000 claims description 5
• 239000010410 layer Substances 0.000 description 61
• 239000000463 material Substances 0.000 description 5
• 230000015556 catabolic process Effects 0.000 description 3
• 230000007547 defect Effects 0.000 description 3
• 239000010408 film Substances 0.000 description 3
• 239000011572 manganese Substances 0.000 description 3
• 239000000758 substrate Substances 0.000 description 3
• 230000006378 damage Effects 0.000 description 2
• 238000000151 deposition Methods 0.000 description 2
• 230000005684 electric field Effects 0.000 description 2
• 238000004519 manufacturing process Methods 0.000 description 2
• SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
• 241001175904 Labeo bata Species 0.000 description 1
• PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
• 229910052581 Si3N4 Inorganic materials 0.000 description 1
• 229910004298 SiO 2 Inorganic materials 0.000 description 1
• VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
• GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
• 239000011149 active material Substances 0.000 description 1
• 229910052782 aluminium Inorganic materials 0.000 description 1
• XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
• 239000005354 aluminosilicate glass Substances 0.000 description 1
• JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
• 229910002113 barium titanate Inorganic materials 0.000 description 1
• BJXXCWDIBHXWOH-UHFFFAOYSA-N barium(2+);oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ba+2].[Ta+5].[Ta+5].[Ta+5].[Ta+5] BJXXCWDIBHXWOH-UHFFFAOYSA-N 0.000 description 1
• 239000002131 composite material Substances 0.000 description 1
• 230000002950 deficient Effects 0.000 description 1
• 230000008021 deposition Effects 0.000 description 1
• NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 1
• 238000001312 dry etching Methods 0.000 description 1
• 238000002474 experimental method Methods 0.000 description 1
• CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
• 229910003437 indium oxide Inorganic materials 0.000 description 1
• PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
• 229910052748 manganese Inorganic materials 0.000 description 1
• 238000000034 method Methods 0.000 description 1
• 238000012986 modification Methods 0.000 description 1
• 230000004048 modification Effects 0.000 description 1
• TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
• BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
• 239000002245 particle Substances 0.000 description 1
• 239000008188 pellet Substances 0.000 description 1
• 229910052710 silicon Inorganic materials 0.000 description 1
• 239000010703 silicon Substances 0.000 description 1
• HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
• 229910052814 silicon oxide Inorganic materials 0.000 description 1
• 239000002356 single layer Substances 0.000 description 1
• VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
• PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
• XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
• 229910001887 tin oxide Inorganic materials 0.000 description 1
• 238000007740 vapor deposition Methods 0.000 description 1
• 229910052845 zircon Inorganic materials 0.000 description 1
• GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1