JPS629217B2 - - Google Patents

Info

Publication number
JPS629217B2
JPS629217B2 JP15775781A JP15775781A JPS629217B2 JP S629217 B2 JPS629217 B2 JP S629217B2 JP 15775781 A JP15775781 A JP 15775781A JP 15775781 A JP15775781 A JP 15775781A JP S629217 B2 JPS629217 B2 JP S629217B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
reference plate
objective lens
pattern
warpage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP15775781A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5858740A (ja
Inventor
Sunao Nishioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15775781A priority Critical patent/JPS5858740A/ja
Publication of JPS5858740A publication Critical patent/JPS5858740A/ja
Publication of JPS629217B2 publication Critical patent/JPS629217B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP15775781A 1981-10-02 1981-10-02 半導体ウエハのそり測定装置 Granted JPS5858740A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15775781A JPS5858740A (ja) 1981-10-02 1981-10-02 半導体ウエハのそり測定装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15775781A JPS5858740A (ja) 1981-10-02 1981-10-02 半導体ウエハのそり測定装置

Publications (2)

Publication Number Publication Date
JPS5858740A JPS5858740A (ja) 1983-04-07
JPS629217B2 true JPS629217B2 (enrdf_load_stackoverflow) 1987-02-27

Family

ID=15656665

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15775781A Granted JPS5858740A (ja) 1981-10-02 1981-10-02 半導体ウエハのそり測定装置

Country Status (1)

Country Link
JP (1) JPS5858740A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01142511A (ja) * 1987-11-27 1989-06-05 Mitsubishi Cable Ind Ltd 多心光ファイバ心線用コネクタ組立方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6131911A (ja) * 1984-07-25 1986-02-14 Toshiba Corp 表面検査装置
JP2539778B2 (ja) * 1984-11-22 1996-10-02 株式会社日立製作所 検査方法および検査装置
JPS6227606A (ja) * 1985-07-29 1987-02-05 Hitachi Electronics Eng Co Ltd フオ−カススキヤンによるパタ−ン検査方法
JPS62156507A (ja) * 1985-12-04 1987-07-11 ケイエルエイ・インストラメンツ・コ−ポレ−シヨン 三次元物体の表面を検査する光学的検査装置
CN113555292A (zh) * 2020-04-23 2021-10-26 海太半导体（无锡）有限公司 一种监控基板弯曲的系统

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01142511A (ja) * 1987-11-27 1989-06-05 Mitsubishi Cable Ind Ltd 多心光ファイバ心線用コネクタ組立方法

Also Published As

Publication number Publication date
JPS5858740A (ja) 1983-04-07

Similar Documents

Publication Publication Date Title
US5365051A (en) Projection exposure apparatus
KR100471524B1 (ko) 노광방법
CN106814546B (zh) 焦面检测装置、焦面标定方法与硅片曝光方法
JP3181050B2 (ja) 投影露光方法およびその装置
KR100512838B1 (ko) 노광 방법 및 노광 장치
US7692128B2 (en) Focus control method for an optical apparatus which inspects a photo-mask or the like
JP4323608B2 (ja) 露光装置およびデバイス製造方法
JP3211491B2 (ja) 投影露光装置及びそれを用いた半導体製造方法並びに装置
KR101962830B1 (ko) 사전 정렬 측정 장치 및 방법
KR102078079B1 (ko) 노광 장치, 노광 방법, 및 물품의 제조 방법
JP2009071103A (ja) 露光システムおよび半導体装置の製造方法
US7095904B2 (en) Method and apparatus for determining best focus using dark-field imaging
JP2005070225A (ja) 表面画像投影装置及び表面画像投影方法
JPS629217B2 (enrdf_load_stackoverflow)
JP2539778B2 (ja) 検査方法および検査装置
JP5532698B2 (ja) 露光装置及び露光方法
JP2009010139A (ja) 露光装置及びデバイス製造方法
JPH0135492B2 (enrdf_load_stackoverflow)
JPH09101116A (ja) 自動焦点合わせ方法及びその装置並びにパターン検出方法及びその装置
JP4304413B2 (ja) 半導体露光装置のレチクルのレベル測定方法
TW202234175A (zh) 檢測裝置、檢測方法、程式、微影裝置、及物品製造方法
US6515733B1 (en) Pattern exposure apparatus for transferring circuit pattern on semiconductor wafer and pattern exposure method
JP2000260840A (ja) 半導体基板の測定方法及び測定装置
CN114326337B (zh) 光刻对准方法
JPH10141933A (ja) 平坦度の測定方法および測定装置