JPS628998Y2 - - Google Patents

Info

Publication number
JPS628998Y2
JPS628998Y2 JP1978093117U JP9311778U JPS628998Y2 JP S628998 Y2 JPS628998 Y2 JP S628998Y2 JP 1978093117 U JP1978093117 U JP 1978093117U JP 9311778 U JP9311778 U JP 9311778U JP S628998 Y2 JPS628998 Y2 JP S628998Y2
Authority
JP
Japan
Prior art keywords
plate
lapping
carrier
support
wrapping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1978093117U
Other languages
Japanese (ja)
Other versions
JPS5511842U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1978093117U priority Critical patent/JPS628998Y2/ja
Publication of JPS5511842U publication Critical patent/JPS5511842U/ja
Application granted granted Critical
Publication of JPS628998Y2 publication Critical patent/JPS628998Y2/ja
Expired legal-status Critical Current

Links

Description

【考案の詳細な説明】 本考案は表面あらさ,および平坦度の表面精度
の高い加工に用いられるラツピング装置に関する
ものである。
[Detailed Description of the Invention] The present invention relates to a wrapping device used for machining with high surface accuracy in terms of surface roughness and flatness.

従来、磁気ヘツド組立体、或いは半導体薄板を
所定寸法に研磨及び鏡面仕上する装置としてラツ
ピング装置が知られている。第1図,第2図は片
面ラツプ方式の従来のラツピング装置の1例で、
薄板1を平坦性の良い支持体2に接着剤3で取付
け、薄板1がラツプ盤4に接触するようラツプ盤
の上に設置される。ラツピング装置は装置枠5C
に対しストツパ5bが設けられている。このよう
にして、ラツプ盤4を回転するとガードリンク5
aおよびその内部に設けられている支持体2はス
トツパ5bでチツプ盤回転方向には動かず、従つ
て自転し薄板1の表面がラツプ剤により所定の厚
みだけ研磨される。
2. Description of the Related Art Conventionally, a wrapping device is known as a device for polishing a magnetic head assembly or a semiconductor thin plate to a predetermined size and giving it a mirror finish. Figures 1 and 2 show an example of a conventional wrapping device using a single-sided wrapping method.
The thin plate 1 is attached to a support 2 having good flatness with an adhesive 3, and the thin plate 1 is placed on the lapping plate 4 so as to be in contact with the lapping plate 4. The wrapping device is device frame 5C.
A stopper 5b is provided for this purpose. In this way, when the lap board 4 is rotated, the guard link 5
A and the support body 2 provided therein do not move in the direction of rotation of the chip plate by a stopper 5b, and thus rotate, and the surface of the thin plate 1 is polished by a predetermined thickness with a lapping agent.

上記片面ラツピング装置における研磨に際して
支持体2には加重をかける図示しない重しが設け
られ、型磨効果を向上せしめるようにしている。
この重しはラツプ盤上に配置される支持体2の
各々に対してもうけられるとともに当該支持体2
に対応する大きさの加重盤によつて構成されてい
る。
A weight (not shown) is provided to apply weight to the support 2 during polishing in the one-sided wrapping device, so as to improve the mold polishing effect.
This weight is provided for each support 2 placed on the lap board, and
It consists of a weighted plate of a size corresponding to

しかしながら、上記支持体2と対応すべき大き
さの加重盤の配置は人手によつて施され、各々の
支持体への配置に際してはズレを生じやすく、該
ズレによつて加重にバラツキを生じ不均一な研磨
を招くことがある。また、両面ラツピング装置で
は両側より研磨するので、平行度の高い加工がで
きるが、しかし被加工物が薄く小さいものは、支
持体への出し入れがやりにくく、かつ、支持体自
体が薄く(厚さ0.1mm程度まで)なるので、反り
が出易く、また被加工物が薄板のために研磨中に
支持体により破損し易い。以上、説明したよう
に、従来のラツピング装置では、研磨の均一さに
欠けたり、支持体自体を厚くできないので支持体
の反りとか、被加工物のキヤリヤへの挿入のしに
くさ或いは研磨中に破損し易いという欠点があつ
た。
However, the arrangement of the load plates of a size corresponding to the support 2 is done manually, and misalignment is likely to occur when placing them on each support. This may lead to uneven polishing. In addition, since double-sided wrapping equipment polishes from both sides, highly parallel processing is possible. However, if the workpiece is thin and small, it is difficult to put it in and out of the support, and the support itself is thin (thickness (up to about 0.1 mm), warping is likely to occur, and since the workpiece is a thin plate, it is likely to be damaged by the support during polishing. As explained above, with conventional wrapping equipment, polishing may lack uniformity, the support itself cannot be thickened, so the support may warp, it may be difficult to insert the workpiece into the carrier, or there may be problems during polishing. The drawback was that it was easily damaged.

本考案の目的は上記の欠点を除去するラツピン
グ装置を提供するにある。
The object of the present invention is to provide a wrapping device which eliminates the above-mentioned drawbacks.

そのため、本考案は、被加工物を支持体上に固
定し、ラツプ盤上に該被加工物が該ラツプ盤に接
触するよう該支持体を設け、該支持体と該ラツプ
盤間にラツプ剤を供給するとともに該支持体を回
動させて該被加工物を研磨するラツピング装置に
おいて該ラツプ盤上に設けられた複数の支持体に
共通に加重を与える加重盤を設け、該加重盤の該
支持体側接触面は摩擦抵抗の少ない材質で形成さ
れ、かつ該ラツプ剤は該ラツプ盤へのみ供給され
るよう構成されたことを特徴とする。
Therefore, in the present invention, the workpiece is fixed on a support, the support is provided on the lapping plate so that the workpiece comes into contact with the lapping plate, and a lapping agent is provided between the support and the lapping plate. In a lapping device that polishes the workpiece by supplying the support and rotating the support, a weighting plate is provided that applies a common weight to a plurality of supports provided on the lapping plate, and The contact surface on the support side is made of a material with low frictional resistance, and the lapping agent is supplied only to the lapping plate.

以下図面に従つて本考案を一実施例を基に説明
すると第3図は本考案の1実施例の断面図、第4
図は本考案の一実施例断面図、第5図は円形定盤
説明図、第6図はキヤリヤ断面図を示す。第5図
に示す如く被加工物1は円形定盤6に取付けられ
る。第6図の如く、この円形定盤6はキヤリヤ9
のくり抜き穴A内に挿入されて第3図の下ラツプ
盤11上に置かれる。キヤリヤ9上の円形定盤6
の外周にリング状の囲い13を設け、円形定盤6
の外周を覆い、用形定盤6上に、上ラツプ盤10
をのせる。この実施例では一般の両面ラツピング
装置を対象としたため上ラツプ盤10を加重盤と
して用いる。この上ラツプ盤10の円形定盤側盤
面は摩擦抵抗に小さいテフロン材で形成し、該円
形定盤側盤面において磨擦により熱が発生するこ
とを防止する。即ち上記ラツプ盤は当該円形定盤
へ加重を与えることのみを目的とするものであ
り、上記円形定盤の回動に際する熱の発生を防止
するため、上記の如く円形定盤側盤面をテフロン
材で形成するものである。キヤリヤ9はその周囲
にギヤが設けられ、外周歯車7と内周歯車8とか
み合い内周歯車8は軸16に取り付けられてい
る。なお、軸16及び外周歯車7は図示しない駆
動手段で回転駆動される構造である。また、ラツ
プ剤の供給はラツプ剤分配器17よりラツプ剤注
入管14により外周側の数ケ所から下ラツプ盤1
1のみに注入される構造になつている。
The present invention will be described below based on one embodiment with reference to the drawings. FIG. 3 is a cross-sectional view of one embodiment of the present invention, and FIG.
The figure shows a cross-sectional view of one embodiment of the present invention, Fig. 5 is an explanatory view of the circular surface plate, and Fig. 6 is a cross-sectional view of the carrier. As shown in Fig. 5, the workpiece 1 is attached to the circular surface plate 6. As shown in Fig. 6, the circular surface plate 6 is attached to the carrier 9.
The circular plate 6 on the carrier 9 is inserted into the hollow hole A and placed on the lower wrapping plate 11 shown in FIG.
A ring-shaped enclosure 13 is provided around the outer periphery of the circular surface plate 6
The upper wrapping plate 10 is placed on the shaping plate 6 to cover the outer periphery of the
The upper wrapping plate 10 is used as the load plate since this embodiment is intended for a general double-sided wrapping device. The circular surface of the upper wrapping plate 10 is made of Teflon material with low friction resistance to prevent heat generation due to friction on the circular surface. In other words, the above-mentioned wrapping plate has the sole purpose of applying a load to the circular surface, and the circular surface is made of Teflon material as described above to prevent heat generation when the circular surface is rotated. The carrier 9 is provided with a gear around its periphery, and meshes with the outer peripheral gear 7 and the inner peripheral gear 8, and the inner peripheral gear 8 is attached to the shaft 16. The shaft 16 and the outer peripheral gear 7 are rotated by a drive means not shown. The lapping agent is supplied from the lapping agent distributor 17 to the lower wrapping plate 1 through the lapping agent injection pipe 14 from several points on the outer periphery.
The structure is such that injection is only into 1.

第4図は第3図の−′面を上から見た図で
キヤリヤ9と外周歯車7と内周歯車8とはそれぞ
れかみ合つている。従つて、外周歯車7と内周歯
車8が矢印方向に回転するとキヤリヤ9は矢印方
向に自転および公転する。なお、キヤリヤ9のく
り抜き穴には第5図の円形定盤6が被加工物接着
面を下にし挿入され下ラツプ盤11上におかれて
いる。上ラツプ盤は4つのキヤリヤ9及び定盤6
を覆うよう共通加重をかけることができる。第5
図は円形定盤に被加工物を配置したもので円形定
盤6上に薄板1を円対称にバランスよく接着して
いる。
FIG. 4 is a top view of the plane -' of FIG. 3, in which the carrier 9, the outer gear 7, and the inner gear 8 are meshed with each other. Therefore, when the outer gear 7 and the inner gear 8 rotate in the direction of the arrow, the carrier 9 rotates and revolves in the direction of the arrow. Incidentally, a circular surface plate 6 shown in FIG. 5 is inserted into the hollow hole of the carrier 9 with the surface to which the workpiece is bonded downward, and is placed on the lower lap plate 11. The upper lap plate has four carriers 9 and a surface plate 6.
A common weight can be applied to cover the Fifth
The figure shows a workpiece placed on a circular surface plate, and a thin plate 1 is bonded to the circular surface plate 6 in a circularly symmetrical manner in a well-balanced manner.

第6図は外周に歯形を有するキヤリヤを示し、
キヤリヤ9の偏心位置に円形定盤6を狭間隙を持
つて収納しうる円形くり抜き穴Aを設け、かつ外
部と連がる細い溝15を有する。この溝15によ
りラツプ剤がキヤリヤ9のくり抜き穴A内に一定
量以上溜らないようにしている。またキヤリヤ9
が有する溝15によつて上記ラツプ剤の極大粒子
の停留を防止し、被加工物面にスクラツチの発生
するのを防止する。
Figure 6 shows a carrier with tooth profiles on its outer periphery;
A circular cut-out hole A is provided at an eccentric position of the carrier 9 in which a circular surface plate 6 can be housed with a narrow gap, and a narrow groove 15 communicating with the outside is provided. This groove 15 prevents the lapping agent from accumulating in the hollow hole A of the carrier 9 more than a certain amount. Also, carrier 9
The grooves 15 of the lapping agent prevent the extremely large particles of the lapping agent from staying there, thereby preventing scratches from occurring on the surface of the workpiece.

これは、極大粒子を溝15内に流したとしても
研磨に際する回動によつて、キヤリヤ9の移動方
向と反対側の外周方向にラツプ剤が流れて極大粒
子がキヤリヤ9の溝15からくり抜穴A内に停留
することはきわめて少ないからである。
This is because even if the extremely large particles flow into the grooves 15, due to rotation during polishing, the lapping agent flows toward the outer periphery on the opposite side to the moving direction of the carrier 9, and the extremely large particles are trapped in the grooves 15 of the carrier 9. This is because it is extremely rare for the particles to stay in the hole A.

今、外周歯車7及び内周歯車8の回転により、
キヤリヤ9は公転、自転が行われキヤリヤ9内の
円形定盤6は滑動させられ、薄板1の表面が下ラ
ツプ盤11と接触しラツプ剤により研磨される。
薄板を定盤に接着し研磨する構造にすることによ
りキヤリヤの厚さを従来のように0.1mmと薄くす
る必要もなく、厚くてよいのでキヤリヤの反り易
い点と薄板が研磨中にキヤリヤにより破損するこ
とは防げる。
Now, due to the rotation of the outer gear 7 and the inner gear 8,
The carrier 9 revolves and rotates, the circular surface plate 6 inside the carrier 9 is slid, and the surface of the thin plate 1 comes into contact with the lower lapping plate 11 and is polished by a lapping agent.
By using a structure in which the thin plate is bonded to a surface plate and polished, there is no need to reduce the thickness of the carrier to 0.1 mm as in conventional methods, and it can be made thicker, which eliminates the tendency for the carrier to warp and the thin plate to be damaged by the carrier during polishing. You can prevent it from happening.

また、使用する円形定盤を例えば4枚1組と
し、各定盤間の平行度厚さの差は1μm以内に調
整してある。各定盤にはそれぞれ同数の被加工物
を円対称にバランスよく接着しているので4定盤
を同時にラツプすれば4定盤は均一な寸法精度に
仕上る。
Further, the circular surface plates used are, for example, a set of four, and the difference in parallelism thickness between each surface plate is adjusted to within 1 μm. Since the same number of workpieces are bonded to each surface plate in a circularly symmetrical manner in a well-balanced manner, by wrapping the four surfaces at the same time, the four surfaces can be finished with uniform dimensional accuracy.

また、上ラツプ盤面は4つのキヤリア及び定盤
を平均に加重し、かつ摩擦抵抗を少くしており、
かつ、ラツプ剤の供給も下ラツプ盤のみに行い、
上ラツプ盤面及び4定盤に付着しないようにして
いるので、4定盤はラツプ剤による変化はほとん
どなく、定盤接着の被加工物のみラツプ剤による
変化となり、従つてラツプ剤による摩耗は即被加
工物の摩耗となる。従つて、被加工物を接着した
4定盤を上下ラツプ盤間に挿入し、ラツピングす
れば定盤に接着された被加工物のみ研磨され均一
なものが得られることになる。なお、上記研磨に
際する回動はゆるやかなものであり、遠心力はほ
とんど作用することなく、ラツプ剤の供給位置が
外側の場合でもキヤリヤとラツプ盤の間隙から何
等問題なく当該ラツプ剤の流入が行なえる。
In addition, the upper lap plate surface has four carriers and a surface plate that are weighted evenly to reduce frictional resistance.
In addition, the wrapping agent is supplied only to the lower wrapping board.
Since we prevent it from adhering to the surface of the upper lapping plate and the 4th surface plate, there is almost no change in the 4th surface plate due to the lapping agent, and only the workpiece to which the surface plate is adhered will be affected by the lapping agent, so the wear due to the lapping agent will be immediate. This results in wear of the workpiece. Therefore, by inserting the four surface plates to which the workpieces are bonded between the upper and lower lapping disks and lapping, only the workpieces bonded to the surface plates are polished and a uniform surface is obtained. Note that the rotation during polishing is gentle, and almost no centrifugal force is applied, so even if the lapping agent is supplied from the outside, the lapping agent will flow in from the gap between the carrier and the lapping plate without any problem. can be done.

今、ラツピング装置に第7図Aの如き検出器を
設けることにより自動測定は可能となる。第7図
Aにおいて電気マイクロメータ針18をマイクロ
メータ針上下移動ネジ20によつて所定研磨を設
定(微量部分は第7図Bにより行う)ラツピング
を行えば、被加工物薄板1の研磨に従い、上ラツ
プ盤10は下降し、上ラツプ盤10に取付けられ
たアンビル受19と電気マイクロメータ18と接
し、研磨量を検出し装置の駆動は停止されるので
自動測定が可能となる。なお、第7図Bは第7図
AのD部の拡大図で研磨量セツトツマミ21,零
セツト時または研磨終了時の指針位置22,零セ
ツトツマミ23を示す。また、偏心キヤリヤ9上
にあるリング状の囲い13は注入されたラツプ剤
が直接偏心キヤリヤ9内に入ることを防止するた
めのもので、直接ラツプ剤が注入されるとラツプ
剤砥粒中に含まれている極大粒子が多数混入して
くるために被加工物面にスクラツチを発生させ
る。従つて、キヤリヤ9上に注入されたラツプ剤
は一旦下ラツプ盤11上に落し、下ラツプ盤11
と偏心キヤリヤ9との間隙により極大粒子の侵入
を防ぎ、ある程度の選別が行われる結果となり、
スクラツチの発生は防げる。
Automatic measurement is now possible by providing a wrapping device with a detector as shown in FIG. 7A. In FIG. 7A, if the electric micrometer needle 18 is set to a predetermined level of polishing using the micrometer needle up and down movement screw 20 (minor portions are performed as shown in FIG. 7B) and wrapping is performed, as the workpiece thin plate 1 is polished, The upper lapping plate 10 is lowered and comes into contact with the anvil receiver 19 and the electric micrometer 18 attached to the upper lapping plate 10, and the amount of polishing is detected and the driving of the device is stopped, thus making automatic measurement possible. Incidentally, FIG. 7B is an enlarged view of section D in FIG. 7A, showing the polishing amount set knob 21, the pointer position 22 at the time of zero setting or the end of polishing, and the zero set knob 23. Furthermore, the ring-shaped enclosure 13 on the eccentric carrier 9 is intended to prevent the injected lapping agent from directly entering the eccentric carrier 9. Scratches occur on the surface of the workpiece because a large number of extremely large particles are mixed in. Therefore, the lapping agent injected onto the carrier 9 is once dropped onto the lower lapping plate 11, and then
The gap between the particle and the eccentric carrier 9 prevents the entry of extremely large particles, resulting in a certain degree of sorting.
Scratches can be prevented from occurring.

以上、本考案を実施例にもとづいて説明した
が、これら実施例に限定されることなく本考案に
もとづいて更に変形された方法が可能である。例
えば下ラツプ盤へのラツプ剤の注入を外周側より
行つているものを内側より行つてもよい。また、
上ラツプ盤面に摩耗の少いテフロン材の代りに布
であつてもよい。さらに本実施例では4定盤で説
明したが定盤の数は限定するものでなく、複数個
あればよい。
Although the present invention has been described above based on embodiments, it is not limited to these embodiments, and further modified methods are possible based on the present invention. For example, the lapping agent may be injected into the lower lapping board from the inside instead of the outer circumferential side. Also,
The upper lap plate surface may be made of cloth instead of Teflon material, which causes less wear. Further, although the present embodiment has been described using four surface plates, the number of surface plates is not limited, and a plurality of surfaces may be used.

以上、実施例で説明したように、本考案によれ
ば薄板を定盤に接着して研磨することにより、キ
ヤリヤの厚さを薄くする必要なく、キヤリヤの反
り及び薄板が研磨中キヤリヤにより破損すること
も防げる。また、薄板のキヤリヤへの出し入れ操
作性の改善もできる。さらに定盤収納部のリング
状の囲いの設置により、研磨面の向上がはかれ
る。また、上ラツプ盤面の摩擦抵抗を少くし、ラ
ツプ剤の供給を下ラツプ盤のみにすることにより
定盤への影響がほとんどなくなり、ラツプ剤によ
り摩耗量は被加工物の摩耗となり、自動ラツピン
グ装置の検出器により自動測定が可能となり、ラ
ツピングの自動化がはかれる。
As explained above in the embodiments, according to the present invention, by bonding a thin plate to a surface plate and polishing it, there is no need to reduce the thickness of the carrier, and the carrier is not warped and the thin plate is damaged by the carrier during polishing. It can also be prevented. Furthermore, it is possible to improve the operability of loading and unloading thin plates into and out of the carrier. Furthermore, by installing a ring-shaped enclosure in the surface plate storage area, the polishing surface can be improved. In addition, by reducing the frictional resistance on the surface of the upper lapping plate and supplying the lapping agent only to the lower lapping plate, there is almost no effect on the surface plate, and the amount of wear due to the lapping agent is reduced to the wear of the workpiece. This detector enables automatic measurement and automates wrapping.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は一般のキヤリヤに薄板を接着した説明
図、第2図は従来の片面ラツピング装置の一実施
例構成図、第3図は本考案の1実施例の断面図、
第4図は第3図の−′面を上から見た平面
図、第5図は円形定盤に被加工物を配置した図、
第6図はキヤリヤの溝の説明図、第7図は自動ラ
ツピング装置の検出器の1例説明図。 1……薄板、6……円形定盤(ガラス)、7…
…外周歯車、8……内周歯車、9……偏心キヤリ
ヤ、10……上ラツプ盤(盤面テフロン製)、1
1……下ラツプ盤、13……リング状の囲い、1
4……ラツプ剤注入管、15……溝、16……
軸、17……ラツプ剤分配器、18……電気マイ
クロメータ針、19……アンビル受、20……マ
イクロメータ針移動ネジ、21……研磨量セツト
ツマミ、22……零セツト時指針位置、23……
零セツトツマミ。
Fig. 1 is an explanatory diagram of a thin plate bonded to a general carrier, Fig. 2 is a configuration diagram of an embodiment of a conventional single-sided wrapping device, and Fig. 3 is a sectional view of an embodiment of the present invention.
Figure 4 is a plan view of the −' plane of Figure 3 viewed from above, Figure 5 is a diagram of the workpiece placed on a circular surface plate,
FIG. 6 is an explanatory diagram of a carrier groove, and FIG. 7 is an explanatory diagram of an example of a detector of an automatic wrapping device. 1... thin plate, 6... circular surface plate (glass), 7...
...Outer gear, 8...Inner gear, 9...Eccentric carrier, 10...Upper lap plate (Teflon plate), 1
1...Lower lap board, 13...Ring-shaped enclosure, 1
4...Lapping agent injection pipe, 15...Groove, 16...
Shaft, 17... Lupping agent distributor, 18... Electric micrometer needle, 19... Anvil holder, 20... Micrometer needle moving screw, 21... Polishing amount set knob, 22... Zero setting pointer position, 23 ……
Zero set knob.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 被加工物を支持体上に固定し、ラツプ盤上に該
被加工物が該ラツプ盤に接触するよう該支持体を
設け、該支持体と該ラツプ盤間にラツプ剤を供給
するとともに該支持体を回動させて該被加工物を
研磨するラツピング装置において、該ラツプ盤上
に設けられた複数の支持体に共通に加重を与える
加重盤を設け、該加重盤の該支持体側接触面は摩
擦抵抗の少ない材質で形成され、かつ該ラツプ剤
は該ラツプ盤へのみ供給されるよう構成されたこ
とを特徴とするラツピング装置。
The workpiece is fixed on a support, the support is provided on a lapping plate so that the workpiece comes into contact with the lapping plate, and a lapping agent is supplied between the support and the lapping plate, and the support is In a lapping device that polishes a workpiece by rotating its body, a weighting plate is provided that applies a common weight to a plurality of supports provided on the lapping plate, and the contact surface of the weighting plate on the support side is 1. A wrapping device, characterized in that it is made of a material with low frictional resistance, and is configured so that the wrapping agent is supplied only to the wrapping disk.
JP1978093117U 1978-07-06 1978-07-06 Expired JPS628998Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1978093117U JPS628998Y2 (en) 1978-07-06 1978-07-06

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1978093117U JPS628998Y2 (en) 1978-07-06 1978-07-06

Publications (2)

Publication Number Publication Date
JPS5511842U JPS5511842U (en) 1980-01-25
JPS628998Y2 true JPS628998Y2 (en) 1987-03-02

Family

ID=29023929

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1978093117U Expired JPS628998Y2 (en) 1978-07-06 1978-07-06

Country Status (1)

Country Link
JP (1) JPS628998Y2 (en)

Also Published As

Publication number Publication date
JPS5511842U (en) 1980-01-25

Similar Documents

Publication Publication Date Title
US7470169B2 (en) Method of polishing semiconductor wafers by using double-sided polisher
US4519168A (en) Liquid waxless fixturing of microsize wafers
US5951374A (en) Method of polishing semiconductor wafers
JPH0335063B2 (en)
JPH0413568A (en) Backing pad, precise flattening method thereof and polishing method thereof for semiconductor wafer
JP2015123545A (en) Double-sided polishing device of workpiece
JPS628998Y2 (en)
JP3493208B2 (en) Method of manufacturing plate having flat main surface and method of manufacturing plate having two parallel main surfaces
GB2058620A (en) A method and apparatus for effecting the lapping of wafers of semiconductive material
JP2003305636A (en) Sphere polishing device
US5187901A (en) Circumferential pattern finishing machine
JPS6365473B2 (en)
JPS62236671A (en) Holding device for polished material
JPH01321161A (en) Polishing method
JPS5822657A (en) Lapping apparatus
JP3821944B2 (en) Wafer single wafer polishing method and apparatus
JP2941317B2 (en) Fixed size polishing processing method
JP2787942B2 (en) Polishing method of headpiece aggregate
JPS623412A (en) Lapping device
CN212095829U (en) Polishing jig device
JPH02294032A (en) Method and device for polishing wafer
JPH03154771A (en) Polishing device
JPH04261768A (en) Double-side lapping device
JPS5817724Y2 (en) Double-sided polishing device
JPH0349872A (en) Bed seat-provided wet grindstone and manufacture thereof