JPS628008B2 - - Google Patents

Info

Publication number
JPS628008B2
JPS628008B2 JP8573380A JP8573380A JPS628008B2 JP S628008 B2 JPS628008 B2 JP S628008B2 JP 8573380 A JP8573380 A JP 8573380A JP 8573380 A JP8573380 A JP 8573380A JP S628008 B2 JPS628008 B2 JP S628008B2
Authority
JP
Japan
Prior art keywords
growth
melt
crystal substrate
precipitates
liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8573380A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5710922A (en
Inventor
Ryoichi Hirano
Jun Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8573380A priority Critical patent/JPS5710922A/ja
Publication of JPS5710922A publication Critical patent/JPS5710922A/ja
Publication of JPS628008B2 publication Critical patent/JPS628008B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/06—Reaction chambers; Boats for supporting the melt; Substrate holders
    • C30B19/063—Sliding boat system

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP8573380A 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device Granted JPS5710922A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8573380A JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8573380A JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Publications (2)

Publication Number Publication Date
JPS5710922A JPS5710922A (en) 1982-01-20
JPS628008B2 true JPS628008B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1987-02-20

Family

ID=13867034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8573380A Granted JPS5710922A (en) 1980-06-24 1980-06-24 Sliding type liquid phase epitaxial growth device

Country Status (1)

Country Link
JP (1) JPS5710922A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11516284B2 (en) 2014-03-24 2022-11-29 Square Enix Co., Ltd. Interactive system, terminal apparatus, server apparatus, control method, program, and recording medium

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2019167569A (ja) * 2018-03-22 2019-10-03 Ntn株式会社 機械部品およびその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11516284B2 (en) 2014-03-24 2022-11-29 Square Enix Co., Ltd. Interactive system, terminal apparatus, server apparatus, control method, program, and recording medium

Also Published As

Publication number Publication date
JPS5710922A (en) 1982-01-20

Similar Documents

Publication Publication Date Title
US3664294A (en) Push-pull structure for solution epitaxial growth of iii{14 v compounds
JPS628008B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
US4149914A (en) Method for depositing epitaxial monocrystalline semiconductive layers via sliding liquid phase epitaxy
US4357897A (en) Device for epitaxially providing a layer of semiconductor material
US4427464A (en) Liquid phase epitaxy
US5482555A (en) Liquid-phase epitaxy growth system and method for growing epitaxial layer
JPS56114897A (en) Method for liquid-phase epitaxial growth
JPH03136236A (ja) 液相エピタキシャル成長方法及び成長装置
JPH0330980B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR900001716B1 (ko) 액상 박막 결정 성장장치
JPH0369587A (ja) 液相エピタキシャル成長装置
JPH043101B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH0193496A (ja) 液相結晶成長装置
JPS61281097A (ja) 半導体液相多層膜成長法
JPS626684Y2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPH03257093A (ja) 液相エピタキシャル成長法および液相エピタキシャル成長装置
JPS5919920B2 (ja) 液相エピタキシヤル成長装置
JPS6174331A (ja) 液相エピタキシヤル成長装置
JPH0258769B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR830002291B1 (ko) 반도체 재료의 에피택샬층 형성장치
DE3731010A1 (de) Verfahren zur fluessigphasenepitaxie
JPS6024079B2 (ja) 液相エピタキシヤル成長装置
JPH0485819A (ja) 液相エピタキシャル成長装置
JPS589794B2 (ja) 半導体の液相多層薄膜成長法および成長装置
JPH0251248B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)