JPS6279649A - Dicing method for semiconductor - Google Patents

Dicing method for semiconductor

Info

Publication number
JPS6279649A
JPS6279649A JP60219116A JP21911685A JPS6279649A JP S6279649 A JPS6279649 A JP S6279649A JP 60219116 A JP60219116 A JP 60219116A JP 21911685 A JP21911685 A JP 21911685A JP S6279649 A JPS6279649 A JP S6279649A
Authority
JP
Japan
Prior art keywords
adhesive
dicing
wafer
adhesive agent
tape
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP60219116A
Other languages
Japanese (ja)
Inventor
Osamu Narimatsu
成松 治
Kazuyoshi Komatsu
小松 和義
Yasuhiro Shibata
柴田 康広
Yoshiro Fuseya
布施谷 善郎
Yasuhisa Fujii
靖久 藤井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Toatsu Chemicals Inc
Original Assignee
Mitsui Toatsu Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Toatsu Chemicals Inc filed Critical Mitsui Toatsu Chemicals Inc
Priority to JP60219116A priority Critical patent/JPS6279649A/en
Publication of JPS6279649A publication Critical patent/JPS6279649A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent paste from scattering and adhering to a blade during a dicing process and to weaken its adhesive force for easier pickup of semiconductor elements during a segmenting process by a method wherein a light-curing adhesive tape is used and exposed to optical energy that is projected in two separate steps. CONSTITUTION:For the prevention of an adhesive agent from scattering, a wafer (a) is installed on the adhesive surface of a dicing tape (j) that is a transparent resin sheet (c) with one of its surfaces covered with a UV-curing adhesive agent (b). A masking sheet (d) is pasted to the rear surface of the dicing tape (j), so configured as to allow a portion of the adhesive agent (b) to cure when exposed to a UV beam (k). The UV beam (k) comes in from the side of the masking sheet (d) to travel through a transparent section (e) positioned along a line for the separation of semiconductor elements, and hardens the portion of the adhesive agent (b). A dicing blade (g) is actuated for a cut into a hardened portion (h). The masking sheet (d) is removed and then another step of UV projection is accomplished from the rear surface of the dicing tape (j). The adhesive agent (b) is completely cured in this process, which reduces the force of its adhesion with a wafer and facilitates the semiconductor element pickup process to follow.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は″!f−導体クエ八り嬰へ体素子毎に切断。[Detailed description of the invention] [Industrial application field] The present invention is to cut the f-conductor into eight parts.

分離する方法に関するものである。It concerns a method of separation.

〔従来の技術〕[Conventional technology]

現在、寥導体ウェハを素子毎に分割する方法としては粘
着テープ等でウェハを固定しダイシングブレードでウェ
ハ裏面まで完全に切断するか又はウェハrA面まで数ミ
クロン残して切断する方法がとられている。
Currently, the methods for dividing a conductor wafer into individual elements include fixing the wafer with adhesive tape, etc., and cutting the wafer completely to the back side with a dicing blade, or cutting the wafer leaving several microns to the rA side. .

丸面まて完全に切断する方法はダイシンクプレートが粘
着テープの粘着剤まで切断1−る。このためプレートに
粘着剤か付着しプレートの7P命か短かくなったり、粘
着fi11か飛散し素子表面に付着し収率か低ドする欠
点かある。
The method for completely cutting a round surface is to cut the die sink plate down to the adhesive of the adhesive tape. This has the disadvantage that the adhesive adheres to the plate, shortening the life of the plate 7P, and the adhesive fi11 scatters and adheres to the element surface, lowering the yield.

又ウェハ裏面まて数ミクロン残してダイシングする方法
は残した部分を外的応力で割ることが必要て、割られた
ウェハ素f形状か不均一になる欠点及び生産性が悪い欠
点かある。
In addition, the method of dicing with several microns left on the back side of the wafer requires the remaining portion to be broken by external stress, which has the disadvantage that the shape of the broken wafer becomes non-uniform and that productivity is poor.

一力一、粘着テープの粘着力か弱い場合はダイシンク時
に素rの飛散が生じ、又強い場合は素r分m即ちピック
アップ作業性が困難となり、素fの大きさに合せ初期粘
着力の選択が必要であり、このことも生産性を低下させ
ている一因てもある、〔発明か解決しようとする問題点
〕 以ヒの問題点にかんがみ、本発明は半専体素rの生産性
向トに際しウェハ裏面まで切断するダイシング方法にお
いてダイシングブレードの寿命を短かくすることなく又
、糊の飛散による素−r付着を防止しかつ素子分離性す
なわちピックアツプ性を容易にするダイシング方法を提
供するものである。
First of all, if the adhesive strength of the adhesive tape is weak, the element r will scatter during die sinking, and if it is strong, the element r will become difficult to pick up, and the initial adhesive strength should be selected according to the size of the element f. [Problems to be solved by the invention] In view of the following problems, the present invention aims to improve the productivity of semi-dedicated elements. To provide a dicing method that does not shorten the life of a dicing blade in a dicing method that cuts to the back surface of a wafer, prevents adhesion of elements due to glue scattering, and facilitates element separation, that is, pick-up performance. be.

〔問題点を解決するための手段〕[Means for solving problems]

本発明者らはウェハ裏面まて切断するダイシング方法に
おいて光硬化型粘着テープを使用し2段階に光照射する
ことによりダイシング時の糊の飛散及びブレードへの糊
の付着をも防止、更に素子分画時には粘着力を低下させ
ピックアツプ性を容易にさせることを見いたし本発明を
完成した。
The present inventors used a photocurable adhesive tape in a dicing method that cuts the backside of a wafer and irradiated it with light in two stages to prevent glue from scattering during dicing and from adhering to the blade, and to further prevent element separation. The present invention was completed after discovering that the adhesive strength can be reduced during printing and the pick-up properties can be made easier.

即ち本発明は半導体素子を形成したウェハを光硬化型粘
着テープ上に固定し、ダイシングブレードで半導体素f
分雛子定ラインに沿って順次ウェハ裏面まて完全に切断
する方法において、半導体素子分m+定ラインに沿った
部分の粘着剤を光で硬化させ、素rを切断、更に全面的
に粘着剤を光で硬化させ素fを分離することを特徴とす
るダイシング方法である。
That is, in the present invention, a wafer on which semiconductor elements are formed is fixed on a photocurable adhesive tape, and a dicing blade is used to dice the semiconductor element f.
In the method of completely cutting the back side of the wafer sequentially along the splitter fixed line, the adhesive in the area along the semiconductor element m + fixed line is cured with light, the element r is cut, and then the adhesive is applied to the entire surface. This dicing method is characterized by curing with light and separating the element f.

本方法はまず第1図に示す如く紫外線硬化型粘着剤(b
)を透明な樹脂シート(c)の片面に塗工したタイシン
クテープ(」)の粘着剤面にウェハ(a)を貼付ける。
This method first uses an ultraviolet curing adhesive (b) as shown in Figure 1.
) is coated on one side of a transparent resin sheet (c), and the wafer (a) is attached to the adhesive side of tie sink tape ('').

この際、粘着剤の粘着力はダイシング時に素子が飛散し
ない程度の粘着力が必要てあり、樹脂シートとしては光
線を透過する例えば、PVC,PP、PET等の半硬質
、硬質フィルムてJソみは作業方式により適当に選択す
ることが好ましい。
At this time, the adhesive force must be strong enough to prevent the elements from scattering during dicing, and the resin sheet may be a semi-rigid or rigid film such as PVC, PP, or PET that transmits light. is preferably selected appropriately depending on the working method.

次に゛ト導体素子分離予定ラインに沿った粘着剤部だけ
を硬化させるマスクシート(d)をダイシンクテープの
背面に貼付ける。このマスクシートは分1i11F定ラ
インに沿って光を透過する透明な部分(e)と光を透過
しない部分(f)を予め製作する必要があるが、常法て
作成することか可能である。
Next, a mask sheet (d) that cures only the adhesive portion along the line where the conductor elements are to be separated is attached to the back side of the die sink tape. Although it is necessary to prepare in advance a transparent part (e) that transmits light and a part (f) that does not transmit light along the fixed line of this mask sheet, it is possible to create it by a conventional method.

貼付ける方法としてはマスクシートもしくはダイシング
テープに透明な仮着性粘着剤を塗布して貼付ける方法も
しくは冶具て端部を固定密着させる方法等適宜選択可能
である。次にマスクシート側から光を照射して粘着剤を
部分的に硬化させる。
As a method of pasting, a method can be selected as appropriate, such as a method of coating a mask sheet or a dicing tape with a transparent temporary adhesive and a method of pasting it, or a method of fixing and sticking the ends using a jig. Next, light is irradiated from the mask sheet side to partially cure the adhesive.

照射する光は電子線及び紫外線が使用できる。紫外線照
射方法としてキセノンランプ、水銀ランプ、太陽光、カ
ーホンアーク等が使用できる。
As the light to be irradiated, electron beams and ultraviolet rays can be used. A xenon lamp, a mercury lamp, sunlight, a carphone arc, etc. can be used as the ultraviolet irradiation method.

外端を定ラインに沿って部分的硬化させた後、第2図に
示す如く、ダイシングブレード(g)で部分的硬化部(
h)を切断する。ダイシング時の硬化部活着剤の硬度は
ダイシングブレードに粘着剤付着か発生しない程度まで
硬化させる必要がある。
After partially hardening the outer edge along a fixed line, the partially hardened part (
h) Cut. The hardness of the adhesive in the cured part during dicing must be hardened to such an extent that the adhesive does not adhere to the dicing blade.

更にm3図で示す如く、マスクシートを剥離後再度、紫
外線をダイシングテープの背面から照射し粘着剤を全面
的に硬化しクエへとの粘着力を低下させる。その後ピン
セットでピックアップし半導体素子を製造する。
Furthermore, as shown in Figure m3, after the mask sheet is peeled off, ultraviolet rays are irradiated from the back of the dicing tape again to harden the adhesive over the entire surface and reduce its adhesion to the cube. After that, it is picked up with tweezers and a semiconductor element is manufactured.

ここで言う紫外線硬化型粘着剤とは、エチレン性二重結
合を存する単量体と官能基を有する共重合性Qi H1
体との共重合物であって、分子中に少なくとも1個の組
合性炭素−炭素二重結合を有するものに、光反応性ビニ
ル化合物および光増感剤を配合したものである。
The ultraviolet curable adhesive mentioned here refers to a copolymerizable Qi H1 monomer containing an ethylenic double bond and a functional group.
A photoreactive vinyl compound and a photosensitizer are blended into a copolymer with a photoreactive vinyl compound and a photosensitizer having at least one associative carbon-carbon double bond in the molecule.

本発明て用いられる上記のエチレン性二重結合を有する
’111体とは例えば(1)メチルアクリレート、エチ
ルアクリレート、ブチルアクリレート。
Examples of the '111 body having an ethylenic double bond used in the present invention include (1) methyl acrylate, ethyl acrylate, and butyl acrylate.

2−エチルヘキシルアクリレート等のアルキルアクリレ
ート及びメチルメタアクリレート、n−ブチルメタアク
リレート等のアルキルメタアクリレート、(2)酢酸ビ
ニルの如きビニルエステル、(3)アクリロニトリル、
アクリルアミド、スチレン等より選ばれたrllfi1
体等かあげられ、これらは1種でもよく、2袖以上組み
合わせて使用してもよい。
Alkyl acrylates such as 2-ethylhexyl acrylate and methyl methacrylate, alkyl methacrylates such as n-butyl methacrylate, (2) vinyl esters such as vinyl acetate, (3) acrylonitrile,
rllfi1 selected from acrylamide, styrene, etc.
One type of these may be used, or two or more sleeves may be used in combination.

またこれらと共重合させる官能基を存する共重合性単量
体としては、(メタ)アクリル酸、イタコン酸、マレイ
ン酸、2−とドロキシエチル(メタ)アクリレート、グ
リシジルメタアクリレート、N−メチロール(メタ〉ア
クリルアミドなどの1種もしくは2種以上が挙げられる
Copolymerizable monomers having functional groups to be copolymerized with these include (meth)acrylic acid, itaconic acid, maleic acid, 2- and droxyethyl (meth)acrylate, glycidyl methacrylate, N-methylol (meth) One or more types such as acrylamide may be used.

この発明で分子中に少なくとも1個の重合性炭素−炭素
二重結合を導入する方法としては上記共重合物中に存在
するカルホキシル基、ヒドロキシル基、グリシジル基な
どの官能基と反応し得る基を打する組合性炭素−炭素二
用結合を含む光反応性@q体を共重合させればよい。
In this invention, the method for introducing at least one polymerizable carbon-carbon double bond into a molecule is to introduce a group capable of reacting with a functional group such as a carboxyl group, a hydroxyl group, or a glycidyl group present in the above-mentioned copolymer. What is necessary is to copolymerize a photoreactive @q substance containing an associative carbon-carbon bond.

本発明で用いられる光反応性ビニル化合物とは、分子中
に光重合反応を行なう重合性炭素−炭素二°重結合を少
なくとも1個、好ましくは2個以上行する多官能性のも
のであり、例えばネオベンチルクリコールジ(メタ)ア
クリレート、ペンタエリスリトールトリ(メタ)アクリ
レート、トリメチロールプロパントリ(メタ)アクリレ
ートなとがある。
The photoreactive vinyl compound used in the present invention is a polyfunctional compound having at least one, preferably two or more, polymerizable carbon-carbon double bonds that undergo a photopolymerization reaction in the molecule. Examples include neobentyl glycol di(meth)acrylate, pentaerythritol tri(meth)acrylate, and trimethylolpropane tri(meth)acrylate.

本発明で用いられる光増感剤としては、ヘンジイン、ベ
ンゾインメチルエーテルなどのベンゾイン類、ヘンシフ
エノン、P−クロロヘンシフエノンなどのベンゾフェノ
ン類などがある。
Examples of the photosensitizer used in the present invention include benzoins such as hengein and benzoin methyl ether, and benzophenones such as hensifhenone and P-chlorohensifhenone.

以上それぞれを配合して成る本発明の紫外線硬化型粘着
剤を透明な樹脂シートの片面に乾燥後の塗膜厚が5〜1
00鱗になる様に塗工することによって光硬化型粘着テ
ープが得られる。
The ultraviolet curable pressure-sensitive adhesive of the present invention containing each of the above components is applied to one side of a transparent resin sheet to a coating thickness of 5 to 1 after drying.
A photocurable pressure-sensitive adhesive tape can be obtained by coating the adhesive so that it has a 0.00 scale coating.

以下実施例にて具体的に説明する。This will be explained in detail in Examples below.

(参考例) 紫外線硬化型粘着剤の製造 2−エチルへキシルアクリレート100部エチルアクリ
レート            55部メチルアクリレ
ート50部 クリシジルメタアクリレート        10部ト
ルエン                 215部過
酸化ベンゾイル           0.1部上上記
外分を窒素置換したフラスコに仕込み、撹拌しながら7
5℃で約10時間反応させた。
(Reference example) Production of ultraviolet curable adhesive 2-Ethylhexyl acrylate 100 parts Ethyl acrylate 55 parts Methyl acrylate 50 parts Crisidyl methacrylate 10 parts Toluene 215 parts Benzoyl peroxide 0.1 part Replace the above with nitrogen Pour into a flask and stir while stirring.
The reaction was carried out at 5°C for about 10 hours.

これに、アクリル酸5部とテトラデシルジメチルヘンジ
ルアンモニウムクロライド4部を添加し、空気を吹き込
みながら 105℃で約6時間反応させ■合作炭素−炭
素二重結合を導入した。
To this were added 5 parts of acrylic acid and 4 parts of tetradecyldimethylhenzyl ammonium chloride, and the mixture was reacted at 105° C. for about 6 hours while blowing air to introduce a carbon-carbon double bond.

この重合生成物100部に対し、ネオペンチルグリコー
ルジアクリレート25部、ベンゾインメチルエーテル5
部を添加混合し、紫外線硬化型粘着剤を得た。
To 100 parts of this polymerization product, 25 parts of neopentyl glycol diacrylate, 5 parts of benzoin methyl ether
A UV-curable pressure-sensitive adhesive was obtained.

実施例に 軸延伸した厚さ200μのポリオレフィンシートの片面
に厚さ20μの紫外線硬化型粘着剤層を設けた紫外線未
照射での粘着力が500g/25nm (T剥離強度)
のダイシングテープに半導体素子の大きさがlOmmx
 lO+nmで切断ライン巾が50μのシリコンウェハ
を貼合せ、更に、ダイシングテープの背面にpめアライ
メントされた10μのPET樹脂マスクシートを治具で
密着させ、水銀ランプで1Osec照射した。
In this example, a UV-curable adhesive layer with a thickness of 20μ was provided on one side of an axially stretched polyolefin sheet with a thickness of 200μ, and the adhesive strength without UV irradiation was 500g/25nm (T peel strength).
The size of the semiconductor element is 10mmx on the dicing tape.
A silicon wafer of lO+nm and a cutting line width of 50 μm was laminated, and a PET resin mask sheet of 10 μm aligned in P was closely attached to the back of the dicing tape using a jig, and irradiated with a mercury lamp for 1 Osec.

その後、切断を定ラインに沿ってダイシングソー(ディ
スコ社DAD−3MI)で切断した。
Thereafter, cutting was performed along fixed lines with a dicing saw (DISCO DAD-3MI).

切断後ダイシングテープからマスクシートを剥離しダイ
シングテープの背面から再度水銀ランプて20sec照
射し、バキュームピンセットで素子をピックアップし分
離した。
After cutting, the mask sheet was peeled off from the dicing tape, and the back side of the dicing tape was irradiated again with a mercury lamp for 20 seconds, and the elements were picked up and separated using vacuum tweezers.

結果は表−1に示す如くダイシングブレードに粘着剤の
何名もなく、素子表面への付着もなかった。又バキュー
ムピンセットでのピックアップ分離工程ではlコの素f
も残す事なく容易に分離することができた。
As shown in Table 1, there was no adhesive on the dicing blade, and there was no adhesive on the surface of the element. In addition, in the pick-up separation process using vacuum tweezers, l element f
It could be easily separated without leaving any residue.

比較例−1 実施例−1て使用したダイシングテープを使用し、実施
例−1て使用したシリコンウェハを貼付け、マスクフィ
ルムを使用せずダイシングテープの背面から水銀ランプ
で1osec照射し粘着剤を硬化させた。その後ト記ダ
イシングソーで切断しバキュームピンセットでピックア
ップ分離した。
Comparative Example-1 The dicing tape used in Example-1 was used, the silicon wafer used in Example-1 was attached, and the adhesive was cured by irradiating the back of the dicing tape with a mercury lamp for 1 osec without using a mask film. I let it happen. Thereafter, it was cut using a dicing saw and picked up and separated using vacuum tweezers.

結果は表−1に示す如くダイシング而に全面的に粘着剤
が硬化し粘着力か低下するためダイシング時に素Y−の
飛散が発生した。
As shown in Table 1, the adhesive hardened over the entire surface during dicing and the adhesive strength decreased, causing scattering of elementary Y- during dicing.

比較例−2 厚さ80μの軟質塩ビシートの片面に通常の粘着剤を厚
さ20μ塗$ L/た粘着力500g/25+nmのダ
イシングテープを使用して実施例−1で使用したシリコ
ンウェハを上記ダイシングソーで切断し、バキュームピ
ンセットでピックアップ分離した。
Comparative Example-2 One side of a soft PVC sheet with a thickness of 80μ was coated with a regular adhesive to a thickness of 20μ. Using a dicing tape with an adhesive force of 500g/25+nm, the silicon wafer used in Example-1 was prepared as described above. It was cut with a dicing saw and picked up and separated with vacuum tweezers.

結果は表−1に示す如くダイシングブレード及び素子表
面への粘着剤付着が見られ、ブレードを100hrで交
換した。
As shown in Table 1, adhesion of adhesive to the dicing blade and element surface was observed, and the blade was replaced after 100 hours.

又ピックアップ時の粘着力も強<60%の素子がピック
アップできなかった。
Furthermore, the adhesive strength during pickup was strong and elements with <60% could not be picked up.

比較例−3 粘着力20g/25mmの比較例−2で使用した同一構
成のダイシングテープを使用し実施例−1で使用したシ
リコンウェハをト記ダイシングソーで切断しその後素子
をピックアップ分離した。
Comparative Example 3 Using a dicing tape having the same structure as that used in Comparative Example 2 with an adhesive force of 20 g/25 mm, the silicon wafer used in Example 1 was cut with the dicing saw described above, and then the elements were picked up and separated.

結果は表−1に示す如くダイシングブレード、及び素子
表面への粘着剤の付着が見られ又、ダイシンク時に70
%の素fか飛散した。
As shown in Table 1, the results showed that there was adhesive adhesion to the dicing blade and the element surface, and when die sinking
% of elementary f was scattered.

【図面の簡単な説明】[Brief explanation of drawings]

第1図はクエへをダイシングテープの粘着剤面に固定し
、この背面に貼布したマスクシートを通して光を照射す
る場合を示し、第2図は、かくして硬化した粘着剤部分
をダイシングブレードで切断する場合を示し、第3図は
次にマスクシートを剥離し、ダイシングテープの背面か
ら再度、光を照射し、を導棒先fをピックアップする場
合を示す。 a:シリコンウェハ、b=紫外線硬化粘着剤、CIJt
材フィルム、  d:マスクフィルム、e:光透過部、
    f:光遮断部、g:ダイシングブレード、  
 ′ h:硬化した粘着剤部、 i:バキュームピンセット、 j:ダイシングテープ、 k:UV光線。
Figure 1 shows a case in which a square is fixed to the adhesive side of a dicing tape and light is irradiated through a mask sheet pasted on the back side of the tape, and Figure 2 shows a case in which the cured adhesive part is cut with a dicing blade. FIG. 3 shows a case in which the mask sheet is then peeled off, light is irradiated again from the back side of the dicing tape, and the guide rod tip f is picked up. a: silicon wafer, b = ultraviolet curing adhesive, CIJt
material film, d: mask film, e: light transmitting part,
f: light blocking part, g: dicing blade,
'h: hardened adhesive part, i: vacuum tweezers, j: dicing tape, k: UV light.

Claims (1)

【特許請求の範囲】[Claims] 半導体素子を形成したウェハを光硬化型粘着テープ上に
固定しダイシングブレードで半導体素子分離予定ライン
に沿って順次ウェハ裏面まで完全に切断する方法におい
て半導体素子分離予定ラインに沿った部分の粘着剤を光
で硬化させた後素子を切断、更に全面的に粘着剤を光で
硬化させ素子を分離することを特徴とするダイシング方
法。
In this method, a wafer on which semiconductor elements have been formed is fixed on a photocurable adhesive tape, and a dicing blade is used to completely cut the wafer along the line where the semiconductor elements are to be separated, sequentially to the back side of the wafer. A dicing method characterized by cutting the elements after curing with light, and further curing the adhesive over the entire surface with light to separate the elements.
JP60219116A 1985-10-03 1985-10-03 Dicing method for semiconductor Pending JPS6279649A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60219116A JPS6279649A (en) 1985-10-03 1985-10-03 Dicing method for semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60219116A JPS6279649A (en) 1985-10-03 1985-10-03 Dicing method for semiconductor

Publications (1)

Publication Number Publication Date
JPS6279649A true JPS6279649A (en) 1987-04-13

Family

ID=16730497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60219116A Pending JPS6279649A (en) 1985-10-03 1985-10-03 Dicing method for semiconductor

Country Status (1)

Country Link
JP (1) JPS6279649A (en)

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461208A (en) * 1987-09-01 1989-03-08 Fsk Kk Cutting method of wafer
JPH02127004A (en) * 1988-11-08 1990-05-15 Fujitsu Ltd Manufacture of semiconductor chip
JPH02303050A (en) * 1989-05-17 1990-12-17 Fujitsu Ltd Cutting of semiconductor wafer
JPH04249343A (en) * 1991-02-05 1992-09-04 Sharp Corp Substrate separating method
EP0550014A2 (en) * 1991-12-30 1993-07-07 Nitto Denko Corporation Dicing-die bonding film
US6171163B1 (en) 1997-10-02 2001-01-09 Nec Corporation Process for production of field-emission cold cathode
EP1411547A2 (en) * 2002-10-15 2004-04-21 Nitto Denko Corporation Dicing/die-bonding-film, method of fixing semiconductor chips and semiconductor device
US7309925B2 (en) 2003-12-26 2007-12-18 Nitto Denko Corporation Dicing die-bonding film
US7449226B2 (en) 2003-05-29 2008-11-11 Nitto Denko Corporation Dicing die-bonding film, method of fixing chipped work and semiconductor device
US7508081B2 (en) 2004-03-17 2009-03-24 Nitto Denko Corporation Dicing die-bonding film
US7569118B2 (en) 2004-04-28 2009-08-04 Canon Kabushiki Kaisha Method for dicing wafer and process for manufacturing liquid-discharging head using the dicing method
US20130029137A1 (en) * 2011-07-25 2013-01-31 Lintec Corporation Adhesive Sheet
JP2019192710A (en) * 2018-04-20 2019-10-31 株式会社東京精密 Tape-equipped wafer processing apparatus and processing method thereof
CN114093814A (en) * 2021-11-12 2022-02-25 无锡微视传感科技有限公司 Scribing method for wafer with double-sided structure
JP2022172157A (en) * 2018-04-20 2022-11-15 株式会社東京精密 Wafer processing device with tape and processing method thereof

Cited By (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6461208A (en) * 1987-09-01 1989-03-08 Fsk Kk Cutting method of wafer
JPH057168B2 (en) * 1987-09-01 1993-01-28 Rintetsuku Kk
JPH02127004A (en) * 1988-11-08 1990-05-15 Fujitsu Ltd Manufacture of semiconductor chip
JPH02303050A (en) * 1989-05-17 1990-12-17 Fujitsu Ltd Cutting of semiconductor wafer
JPH04249343A (en) * 1991-02-05 1992-09-04 Sharp Corp Substrate separating method
US5476565A (en) * 1991-12-30 1995-12-19 Nitto Denko Corporation Dicing-die bonding film
EP0550014A2 (en) * 1991-12-30 1993-07-07 Nitto Denko Corporation Dicing-die bonding film
US6171163B1 (en) 1997-10-02 2001-01-09 Nec Corporation Process for production of field-emission cold cathode
US7646103B2 (en) 2002-10-15 2010-01-12 Nitto Denko Corporation Dicing/die-bonding film, method of fixing chipped work and semiconductor device
EP1411547A2 (en) * 2002-10-15 2004-04-21 Nitto Denko Corporation Dicing/die-bonding-film, method of fixing semiconductor chips and semiconductor device
EP1411547A3 (en) * 2002-10-15 2004-09-22 Nitto Denko Corporation Dicing/die-bonding-film, method of fixing semiconductor chips and semiconductor device
US7060339B2 (en) 2002-10-15 2006-06-13 Nitto Denko Corporation Dicing/die-bonding film, method of fixing chipped work and semiconductor device
US8586415B2 (en) 2002-10-15 2013-11-19 Nitto Denko Corporation Dicing/die-bonding film, method of fixing chipped work and semiconductor device
CN100358126C (en) * 2002-10-15 2007-12-26 日东电工株式会社 Cutting/die-connecting film, method of fixing chip parts and semiconductor equipment
US8178420B2 (en) 2002-10-15 2012-05-15 Nitto Denko Corporation Dicing/die-bonding film, method of fixing chipped work and semiconductor device
US7449226B2 (en) 2003-05-29 2008-11-11 Nitto Denko Corporation Dicing die-bonding film, method of fixing chipped work and semiconductor device
US7780811B2 (en) 2003-05-29 2010-08-24 Nitto Denko Corporation Dicing die-bonding film, method of fixing chipped work and semiconductor device
US7309925B2 (en) 2003-12-26 2007-12-18 Nitto Denko Corporation Dicing die-bonding film
US7429522B2 (en) 2003-12-26 2008-09-30 Nitto Denko Corporation Dicing die-bonding film
US7508081B2 (en) 2004-03-17 2009-03-24 Nitto Denko Corporation Dicing die-bonding film
US7863182B2 (en) 2004-03-17 2011-01-04 Nitto Denko Corporation Dicing die-bonding film
US8304341B2 (en) 2004-03-17 2012-11-06 Nitto Denko Corporation Dicing die-bonding film
US7837820B2 (en) * 2004-04-28 2010-11-23 Canon Kabushiki Kaisha Method for dicing wafer and process for manufacturing liquid-discharging head using the dicing method
US20110027970A1 (en) * 2004-04-28 2011-02-03 Canon Kabushiki Kaisha Method for dicing wafer and process for manufacturing liquid-discharging head using the dicing method
US7569118B2 (en) 2004-04-28 2009-08-04 Canon Kabushiki Kaisha Method for dicing wafer and process for manufacturing liquid-discharging head using the dicing method
US20130029137A1 (en) * 2011-07-25 2013-01-31 Lintec Corporation Adhesive Sheet
JP2019192710A (en) * 2018-04-20 2019-10-31 株式会社東京精密 Tape-equipped wafer processing apparatus and processing method thereof
JP2022172157A (en) * 2018-04-20 2022-11-15 株式会社東京精密 Wafer processing device with tape and processing method thereof
CN114093814A (en) * 2021-11-12 2022-02-25 无锡微视传感科技有限公司 Scribing method for wafer with double-sided structure

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