JPS6461208A - Cutting method of wafer - Google Patents

Cutting method of wafer

Info

Publication number
JPS6461208A
JPS6461208A JP21864087A JP21864087A JPS6461208A JP S6461208 A JPS6461208 A JP S6461208A JP 21864087 A JP21864087 A JP 21864087A JP 21864087 A JP21864087 A JP 21864087A JP S6461208 A JPS6461208 A JP S6461208A
Authority
JP
Japan
Prior art keywords
wafer
state
protective film
film
stuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21864087A
Other languages
Japanese (ja)
Other versions
JPH057168B2 (en
Inventor
Katsuhisa Taguchi
Kazuyoshi Ebe
Toshio Minagawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FSK Corp
Original Assignee
FSK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FSK Corp filed Critical FSK Corp
Priority to JP21864087A priority Critical patent/JPS6461208A/en
Publication of JPS6461208A publication Critical patent/JPS6461208A/en
Publication of JPH057168B2 publication Critical patent/JPH057168B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)
  • Dicing (AREA)

Abstract

PURPOSE:To prevent adhesion of a foreign matter such as trash or chips to the surface of a wafer, by a method wherein radiant rays are applied to a specific protective film after the wafer has been cut off in a chiplike state by sticking the film to the surface of the wafer and the film is peeled off from the surface of the wafer by heating and shrinking the wafer. CONSTITUTION:A dicing sheet 4 is stuck to the backside of a wafer 2 which is prior to cutting-off into a state of elemental small pieces and a protective film comprised of a heat-shrinkable plastic film is stuck to the surface of the said wafer with a radiation-crosslinkable adhesive agent. The wafer 2 is cut into a state of the elemental small pieces by a dicer 8 and a wafer chip 2a is obtained. Then radiant rays are applied to a protective film 6 side by a radiant ray irradiating device 18 of UV and the wafer is heated within a range not exerting a bad influence upon the wafer chip 2a at a heat-shrinkable temperature or higher of a base material 10. The protective film 6 stuck to the surface of the each wafer chip 2a is shrinked thermally into a state of a roll or a dumpling and peeled off from the surface of the wafer chip 2a.
JP21864087A 1987-09-01 1987-09-01 Cutting method of wafer Granted JPS6461208A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21864087A JPS6461208A (en) 1987-09-01 1987-09-01 Cutting method of wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21864087A JPS6461208A (en) 1987-09-01 1987-09-01 Cutting method of wafer

Publications (2)

Publication Number Publication Date
JPS6461208A true JPS6461208A (en) 1989-03-08
JPH057168B2 JPH057168B2 (en) 1993-01-28

Family

ID=16723116

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21864087A Granted JPS6461208A (en) 1987-09-01 1987-09-01 Cutting method of wafer

Country Status (1)

Country Link
JP (1) JPS6461208A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0365249U (en) * 1989-10-30 1991-06-25
US20080121335A1 (en) * 2006-11-29 2008-05-29 Nitto Denko Corporation Method for attaching and peeling pressure-sensitive adhesive sheet, and attaching apparatus of pressure-sensitive adhesive sheet and peeling apparatus of pressure-sensitive adhesive sheet
CN115178884A (en) * 2022-09-13 2022-10-14 西北电子装备技术研究所(中国电子科技集团公司第二研究所) Wafer thermal separation method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011054641A (en) * 2009-08-31 2011-03-17 Nitto Denko Corp Method for separating and removing dicing surface protection tape from object to be cut
JP5597422B2 (en) * 2010-01-19 2014-10-01 デクセリアルズ株式会社 Method for manufacturing electronic component with adhesive film and method for manufacturing mounting body

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116504A (en) * 1984-11-13 1986-06-04 山形日本電気株式会社 Dicing method
JPS6279649A (en) * 1985-10-03 1987-04-13 Mitsui Toatsu Chem Inc Dicing method for semiconductor
JPS62153376A (en) * 1985-12-27 1987-07-08 F S K Kk Pressure-sensitive adhesive sheet
JPS62153375A (en) * 1985-12-27 1987-07-08 F S K Kk Pressure-sensitive adhesive sheet
JPS62216244A (en) * 1986-03-17 1987-09-22 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116504A (en) * 1984-11-13 1986-06-04 山形日本電気株式会社 Dicing method
JPS6279649A (en) * 1985-10-03 1987-04-13 Mitsui Toatsu Chem Inc Dicing method for semiconductor
JPS62153376A (en) * 1985-12-27 1987-07-08 F S K Kk Pressure-sensitive adhesive sheet
JPS62153375A (en) * 1985-12-27 1987-07-08 F S K Kk Pressure-sensitive adhesive sheet
JPS62216244A (en) * 1986-03-17 1987-09-22 Fujitsu Ltd Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0365249U (en) * 1989-10-30 1991-06-25
US20080121335A1 (en) * 2006-11-29 2008-05-29 Nitto Denko Corporation Method for attaching and peeling pressure-sensitive adhesive sheet, and attaching apparatus of pressure-sensitive adhesive sheet and peeling apparatus of pressure-sensitive adhesive sheet
CN115178884A (en) * 2022-09-13 2022-10-14 西北电子装备技术研究所(中国电子科技集团公司第二研究所) Wafer thermal separation method

Also Published As

Publication number Publication date
JPH057168B2 (en) 1993-01-28

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