JPS627859A - アモルフアスシリコン膜の形成方法 - Google Patents

アモルフアスシリコン膜の形成方法

Info

Publication number
JPS627859A
JPS627859A JP14652885A JP14652885A JPS627859A JP S627859 A JPS627859 A JP S627859A JP 14652885 A JP14652885 A JP 14652885A JP 14652885 A JP14652885 A JP 14652885A JP S627859 A JPS627859 A JP S627859A
Authority
JP
Japan
Prior art keywords
magnetic field
gas
amorphous silicon
vacuum chamber
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14652885A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0521983B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Takeshi Watanabe
渡辺　猛志
Kazufumi Azuma
和文 東
Masahiro Tanaka
政博 田中
Mitsuo Nakatani
中谷　光雄
Tadashi Sonobe
園部　正
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14652885A priority Critical patent/JPS627859A/ja
Publication of JPS627859A publication Critical patent/JPS627859A/ja
Publication of JPH0521983B2 publication Critical patent/JPH0521983B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Chemical Vapour Deposition (AREA)
JP14652885A 1985-07-05 1985-07-05 アモルフアスシリコン膜の形成方法 Granted JPS627859A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14652885A JPS627859A (ja) 1985-07-05 1985-07-05 アモルフアスシリコン膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14652885A JPS627859A (ja) 1985-07-05 1985-07-05 アモルフアスシリコン膜の形成方法

Publications (2)

Publication Number Publication Date
JPS627859A true JPS627859A (ja) 1987-01-14
JPH0521983B2 JPH0521983B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-26

Family

ID=15409681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14652885A Granted JPS627859A (ja) 1985-07-05 1985-07-05 アモルフアスシリコン膜の形成方法

Country Status (1)

Country Link
JP (1) JPS627859A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63297566A (ja) * 1987-05-28 1988-12-05 Tokyo Electron Ltd プラズマ処理装置
JPS6436769A (en) * 1987-04-27 1989-02-07 Semiconductor Energy Lab Plasma treatment device
US5125358A (en) * 1988-07-26 1992-06-30 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US5180436A (en) * 1988-07-26 1993-01-19 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture
US5246744A (en) * 1990-11-30 1993-09-21 Central Glass Company, Limited Method of forming thin film of amorphous silicon by plasma cvd
US5346792A (en) * 1991-06-11 1994-09-13 Canon Kabushiki Kaisha Color toner

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS60117712A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 薄膜形成方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56155535A (en) * 1980-05-02 1981-12-01 Nippon Telegr & Teleph Corp <Ntt> Film forming device utilizing plasma
JPS60117712A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 薄膜形成方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6436769A (en) * 1987-04-27 1989-02-07 Semiconductor Energy Lab Plasma treatment device
US5858259A (en) * 1987-04-27 1999-01-12 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6217661B1 (en) 1987-04-27 2001-04-17 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6423383B1 (en) 1987-04-27 2002-07-23 Semiconductor Energy Laboratory Co., Ltd. Plasma processing apparatus and method
US6838126B2 (en) 1987-04-27 2005-01-04 Semiconductor Energy Laboratory Co., Ltd. Method for forming I-carbon film
JPS63297566A (ja) * 1987-05-28 1988-12-05 Tokyo Electron Ltd プラズマ処理装置
US5125358A (en) * 1988-07-26 1992-06-30 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US5180436A (en) * 1988-07-26 1993-01-19 Matsushita Electric Industrial Co., Ltd. Microwave plasma film deposition system
US5246744A (en) * 1990-11-30 1993-09-21 Central Glass Company, Limited Method of forming thin film of amorphous silicon by plasma cvd
US5346792A (en) * 1991-06-11 1994-09-13 Canon Kabushiki Kaisha Color toner
US5204272A (en) * 1991-12-13 1993-04-20 United Solar Systems Corporation Semiconductor device and microwave process for its manufacture

Also Published As

Publication number Publication date
JPH0521983B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-03-26

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