JPS627696A - 液相エピタキシャル成長方法及びその装置 - Google Patents
液相エピタキシャル成長方法及びその装置Info
- Publication number
- JPS627696A JPS627696A JP14579785A JP14579785A JPS627696A JP S627696 A JPS627696 A JP S627696A JP 14579785 A JP14579785 A JP 14579785A JP 14579785 A JP14579785 A JP 14579785A JP S627696 A JPS627696 A JP S627696A
- Authority
- JP
- Japan
- Prior art keywords
- mixed crystal
- growth
- solution
- reservoir
- soln
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000012010 growth Effects 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims description 19
- 239000007791 liquid phase Substances 0.000 title claims description 9
- 239000013078 crystal Substances 0.000 claims abstract description 75
- 239000000758 substrate Substances 0.000 claims abstract description 43
- 239000007788 liquid Substances 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 description 9
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000001125 extrusion Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005204 segregation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000010261 cell growth Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14579785A JPS627696A (ja) | 1985-07-04 | 1985-07-04 | 液相エピタキシャル成長方法及びその装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14579785A JPS627696A (ja) | 1985-07-04 | 1985-07-04 | 液相エピタキシャル成長方法及びその装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS627696A true JPS627696A (ja) | 1987-01-14 |
| JPH0481550B2 JPH0481550B2 (cs) | 1992-12-24 |
Family
ID=15393370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14579785A Granted JPS627696A (ja) | 1985-07-04 | 1985-07-04 | 液相エピタキシャル成長方法及びその装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS627696A (cs) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6221792A (ja) * | 1985-07-18 | 1987-01-30 | Hitachi Cable Ltd | 液相エピタキシヤル成長装置 |
-
1985
- 1985-07-04 JP JP14579785A patent/JPS627696A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6221792A (ja) * | 1985-07-18 | 1987-01-30 | Hitachi Cable Ltd | 液相エピタキシヤル成長装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0481550B2 (cs) | 1992-12-24 |
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