JPS6276783A - 半導体圧力センサ及びその製造方法 - Google Patents
半導体圧力センサ及びその製造方法Info
- Publication number
- JPS6276783A JPS6276783A JP21767285A JP21767285A JPS6276783A JP S6276783 A JPS6276783 A JP S6276783A JP 21767285 A JP21767285 A JP 21767285A JP 21767285 A JP21767285 A JP 21767285A JP S6276783 A JPS6276783 A JP S6276783A
- Authority
- JP
- Japan
- Prior art keywords
- diaphragm
- pressure
- etching
- film
- strain gauge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 88
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 109
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000007789 sealing Methods 0.000 claims abstract description 23
- 239000000463 material Substances 0.000 claims abstract description 16
- 230000001681 protective effect Effects 0.000 claims description 39
- 239000000243 solution Substances 0.000 claims description 29
- 239000007788 liquid Substances 0.000 claims description 25
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 16
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 14
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 14
- 239000012528 membrane Substances 0.000 claims description 13
- 238000012545 processing Methods 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 claims description 2
- 238000007688 edging Methods 0.000 claims 1
- 239000010408 film Substances 0.000 description 80
- 229910052710 silicon Inorganic materials 0.000 description 29
- 239000010703 silicon Substances 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 27
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 8
- 230000035945 sensitivity Effects 0.000 description 7
- 238000001259 photo etching Methods 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 150000003376 silicon Chemical class 0.000 description 2
- -1 12O2) Chemical compound 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 235000006693 Cassia laevigata Nutrition 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 241000735631 Senna pendula Species 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000036772 blood pressure Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000040 hydrogen fluoride Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- WYROLENTHWJFLR-ACLDMZEESA-N queuine Chemical compound C1=2C(=O)NC(N)=NC=2NC=C1CN[C@H]1C=C[C@H](O)[C@@H]1O WYROLENTHWJFLR-ACLDMZEESA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229940124513 senna glycoside Drugs 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21767285A JPS6276783A (ja) | 1985-09-30 | 1985-09-30 | 半導体圧力センサ及びその製造方法 |
| US06/911,245 US4766666A (en) | 1985-09-30 | 1986-09-24 | Semiconductor pressure sensor and method of manufacturing the same |
| US07/154,648 US4771638A (en) | 1985-09-30 | 1988-02-10 | Semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21767285A JPS6276783A (ja) | 1985-09-30 | 1985-09-30 | 半導体圧力センサ及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6276783A true JPS6276783A (ja) | 1987-04-08 |
| JPH0554708B2 JPH0554708B2 (enrdf_load_stackoverflow) | 1993-08-13 |
Family
ID=16707910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21767285A Granted JPS6276783A (ja) | 1985-09-30 | 1985-09-30 | 半導体圧力センサ及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6276783A (enrdf_load_stackoverflow) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6443738A (en) * | 1987-08-11 | 1989-02-16 | Tokai Rika Co Ltd | Pressure sensor |
| JPH01239882A (ja) * | 1988-03-19 | 1989-09-25 | Nippon Denso Co Ltd | 半導体圧力センサ |
| US6693039B2 (en) | 2000-02-29 | 2004-02-17 | Stmicroelectronics S.R.L. | Process for forming a buried cavity in a semiconductor material wafer and a buried cavity |
| JP2005246601A (ja) * | 2004-03-03 | 2005-09-15 | Robert Bosch Gmbh | マイクロマシニング型の構成エレメントおよび相応の製作法 |
| JP2008275630A (ja) * | 2003-03-10 | 2008-11-13 | Hewlett-Packard Development Co Lp | 流体吐出素子 |
| JP2012127902A (ja) * | 2010-12-17 | 2012-07-05 | Mitsubishi Electric Corp | 半導体圧力センサ及びその製造方法 |
| CN113465809A (zh) * | 2020-03-30 | 2021-10-01 | 三菱电机株式会社 | 半导体压力传感器及其制造方法 |
-
1985
- 1985-09-30 JP JP21767285A patent/JPS6276783A/ja active Granted
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6443738A (en) * | 1987-08-11 | 1989-02-16 | Tokai Rika Co Ltd | Pressure sensor |
| JPH01239882A (ja) * | 1988-03-19 | 1989-09-25 | Nippon Denso Co Ltd | 半導体圧力センサ |
| US6693039B2 (en) | 2000-02-29 | 2004-02-17 | Stmicroelectronics S.R.L. | Process for forming a buried cavity in a semiconductor material wafer and a buried cavity |
| US6992367B2 (en) | 2000-02-29 | 2006-01-31 | Stmicroelectronics, S.R.L. | Process for forming a buried cavity in a semiconductor material wafer and a buried cavity |
| JP2008275630A (ja) * | 2003-03-10 | 2008-11-13 | Hewlett-Packard Development Co Lp | 流体吐出素子 |
| JP2005246601A (ja) * | 2004-03-03 | 2005-09-15 | Robert Bosch Gmbh | マイクロマシニング型の構成エレメントおよび相応の製作法 |
| JP2012127902A (ja) * | 2010-12-17 | 2012-07-05 | Mitsubishi Electric Corp | 半導体圧力センサ及びその製造方法 |
| CN113465809A (zh) * | 2020-03-30 | 2021-10-01 | 三菱电机株式会社 | 半导体压力传感器及其制造方法 |
| CN113465809B (zh) * | 2020-03-30 | 2023-08-25 | 三菱电机株式会社 | 半导体压力传感器及其制造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0554708B2 (enrdf_load_stackoverflow) | 1993-08-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP3114570B2 (ja) | 静電容量型圧力センサ | |
| US8384170B2 (en) | Pressure sensor | |
| JP3444639B2 (ja) | 一体型圧力変換器の製造方法および装置 | |
| US20160370242A1 (en) | Pressure sensor generating a transduced signal with reduced ambient temperature dependence, and manufacturing method thereof | |
| CN114235232B (zh) | 一种mems压力传感器及其制备方法 | |
| JPH0750789B2 (ja) | 半導体圧力変換装置の製造方法 | |
| EP0672898B1 (en) | Semiconductor pressure sensor with polysilicon diaphragm and single-crystal gage elements and fabrication method therefor | |
| CN101271028A (zh) | 基于硅硅键合和绝缘层上硅的压力传感器芯片及方法 | |
| EP0742893B1 (en) | A capacitive pressure sensor having a reduced area dielectric spacer | |
| CN113979405B (zh) | Mems真空计及其制备方法 | |
| JPH0755617A (ja) | 容量式圧力変換器 | |
| US4872945A (en) | Post seal etching of transducer diaphragm | |
| US20240302236A1 (en) | Sensor Package With A Sensor Die | |
| US5163329A (en) | Semiconductor pressure sensor | |
| JPS6276783A (ja) | 半導体圧力センサ及びその製造方法 | |
| JPH0554709B2 (enrdf_load_stackoverflow) | ||
| CN114314498A (zh) | Mems薄膜真空计及其制备方法 | |
| US6308575B1 (en) | Manufacturing method for the miniaturization of silicon bulk-machined pressure sensors | |
| CN116878702A (zh) | 抗电磁干扰的mems压阻式压力传感器及其制备方法 | |
| CN115711692A (zh) | 线接触联动薄膜电容式压力敏感芯片及其制造方法 | |
| CN114235236A (zh) | 一种降低输出漂移的mems压力传感器芯片的制作方法 | |
| CN218381359U (zh) | 一种mems压力传感器 | |
| JPH0618345A (ja) | 圧力センサの製造方法 | |
| JPH0510839A (ja) | 半導体圧力センサ | |
| CN119573927A (zh) | 一种原位减小输出漂移的压力传感器芯片及其制备方法 |