JPS6276731A - Method and apparatus for inspecting ultrasonic bonding - Google Patents

Method and apparatus for inspecting ultrasonic bonding

Info

Publication number
JPS6276731A
JPS6276731A JP60216879A JP21687985A JPS6276731A JP S6276731 A JPS6276731 A JP S6276731A JP 60216879 A JP60216879 A JP 60216879A JP 21687985 A JP21687985 A JP 21687985A JP S6276731 A JPS6276731 A JP S6276731A
Authority
JP
Japan
Prior art keywords
bonding
waveform
ultrasonic
memory
features
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60216879A
Other languages
Japanese (ja)
Other versions
JPH0548624B2 (en
Inventor
Mitsusada Shibasaka
柴坂 光貞
Masayuki Okino
沖野 雅之
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Mechatronics Co Ltd
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Seiki Co Ltd filed Critical Toshiba Corp
Priority to JP60216879A priority Critical patent/JPS6276731A/en
Publication of JPS6276731A publication Critical patent/JPS6276731A/en
Publication of JPH0548624B2 publication Critical patent/JPH0548624B2/ja
Granted legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
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    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212Aligning
    • H01L2224/82148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/82169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
    • H01L2224/8218Translational movements
    • H01L2224/82181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85205Ultrasonic bonding
    • HELECTRICITY
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • HELECTRICITY
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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01006Carbon [C]
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    • H01L2924/01042Molybdenum [Mo]
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    • H01L2924/095Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701Low temperature co-fired ceramic [LTCC]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To judge the propriety of bonding by detecting ultrasonic waveform applied to a bonding tool at bonding time and comparing it with a reference waveform. CONSTITUTION:Ultrasonic wave from an ultrasonic oscillator 11 applied to a bonding tool is detected by a waveform detector 21, quantized and converted to a digital signal. The signal signal which indicates the ultrasonic waveform is stored in a waveform memory 22. A feature extractor 23 extracts the features of oscillation stating time, peak value and arriving time, rising angle, total area, partial area, ratio, and similarity to the ideal waveform from the ultrasonic waveform the memory 22. The features extracted from the ultrasonic waveform at preferably bonding time is stored in advance in a reference waveform feature memory 25. A discriminator 24 compares the features extracted by the extractor 23 with the features of the reference waveform to determined the propriety of bonding and outputs the decided result.

Description

【発明の詳細な説明】 (発明の技術分野) 本発明は超音波ボンディングの良否をはんていする超音
波ボンディング検査方法及び装置に関する。
DETAILED DESCRIPTION OF THE INVENTION (Technical Field of the Invention) The present invention relates to an ultrasonic bonding inspection method and apparatus for determining the quality of ultrasonic bonding.

(発明の技術的背景とその問題点) 半導体ペレットとリードフレームの間を電気的に接続す
るために、ボンディング装置が用いられる。ボンディン
グ装置は金線などのボンディングワイヤを、半導体ペレ
ットのポンディングパッドとリードフレームのインナー
リードに接続するものであり、第5図に示すような塁本
的なボンディングツーグンスが採用されている。
(Technical background of the invention and its problems) A bonding device is used to electrically connect a semiconductor pellet and a lead frame. The bonding device connects a bonding wire such as a gold wire to a bonding pad of a semiconductor pellet and an inner lead of a lead frame, and a basic bonding tool as shown in FIG. 5 is used.

まず、リードフレームのベッド1上に載置された半導体
ペレット2のポンディングパッド3の真上に、先端にボ
ール4が形成されたボンディングワイヤ7を挟持するツ
ール5が移wJする。(第5図(a))。
First, the tool 5 that clamps the bonding wire 7 having the ball 4 formed at the tip is moved directly above the bonding pad 3 of the semiconductor pellet 2 placed on the bed 1 of the lead frame. (Figure 5(a)).

次にツール5は下降して、ボンディングワイヤ7の先端
のボール4をポンディングパッド3に圧着する。このと
ぎツール5を超音波で振動させることにより圧着をおこ
なう(第5図(b))。
Next, the tool 5 descends and presses the ball 4 at the tip of the bonding wire 7 onto the bonding pad 3. The crimping is performed by vibrating the sharpening tool 5 using ultrasonic waves (FIG. 5(b)).

ボンディング後、ツール5を上昇させ(第5図(C))
た後、ツール5または半導体ペレット2を移動し、ツー
ル5が次のボンディング位置寸なわちリードフレーム1
のインナーリード9の真上にくるようにする(第5図(
d))。次にツール5を下降させインナーリード9にボ
ンディングワイA77を圧着する(第5図(e))、こ
のときツール5に超音波を印加する。次にツール5を上
昇させてボンディングワイヤ7を引っばって圧着部分か
ら切断しく第5図(f))だ後、電気トーチ8でボンデ
ィングワイV7の先端にボールを形成し次の接続に備え
る(第5図(g))。
After bonding, raise the tool 5 (Fig. 5 (C))
After that, the tool 5 or the semiconductor pellet 2 is moved, and the tool 5 moves to the next bonding position, that is, the lead frame 1.
so that it is directly above the inner lead 9 (see Figure 5).
d)). Next, the tool 5 is lowered to press the bonding wire A77 onto the inner lead 9 (FIG. 5(e)), and at this time, ultrasonic waves are applied to the tool 5. Next, raise the tool 5 and pull the bonding wire 7 to cut it from the crimped part (Fig. 5(f)). Then, use the electric torch 8 to form a ball at the tip of the bonding wire V7 in preparation for the next connection. Figure 5(g)).

かかるボンディングを良好におこなうためには、ボンデ
ィング装置の使用開始時、半導体ペレットの品種変更時
、ボンディング条件変更時に最良のボンディング条件を
定めることが必要である。このためボンディング工程に
おいて、多くのサンプルを抜きとり■ワイヤの引張り強
度■ボンディング部のはく離強度■ワイヤの引張りによ
る断線形状■ボールおよびワイヤの形状等を検査工具や
顕微鏡による目視検査により測定し、ボンディングの良
・不良を検査している。かかる検査を、最良のボンディ
ング条件が発見されるまでおこなう。
In order to perform such bonding well, it is necessary to determine the best bonding conditions when starting to use the bonding equipment, when changing the type of semiconductor pellet, and when changing the bonding conditions. For this reason, in the bonding process, many samples are taken out, the tensile strength of the wire, the peeling strength of the bonding part, the shape of the wire broken due to tension, and the shape of the ball and wire are visually inspected using an inspection tool or a microscope. We are inspecting whether the product is good or bad. Such testing is continued until the best bonding conditions are found.

しかしながら上述の検査ではサンプルを抜き取る度にボ
ンディング装置を停止させなければならず、生産効率を
下げる結果となる。また抜き取り検査であるため、サン
プルに不良品がなくても抜き取られなかった製品に不良
品が混在するという可能性があり、全数検査に比べて劣
る本質的な問題がある。また抜きとられたサンプルは製
品として用いられないので全体の歩留りを下げる結果と
なる。ざらに汰きとられたサンプルに不良が発見された
場合、前回の抜き取りから今回の抜き取りまでの間の製
品に不良品が混在する可能性が高く信頼性に問題がある
。ボンディング装置や超音波発振器の一時的な故障を、
抜きとり検査により発見することは困難であり、不良品
を発生させるおそれがある。このため極めて高い信頼性
が要求される製品では全数の目視検査を行う必要があり
、生産性が低くなるという問題がある。
However, in the above-mentioned inspection, the bonding apparatus must be stopped every time a sample is taken out, which results in a decrease in production efficiency. Furthermore, since it is a sampling inspection, even if there are no defective products in the sample, there is a possibility that defective products may be mixed in with the products that were not sampled, which is an inherent problem that is inferior to a 100% inspection. Moreover, since the extracted sample is not used as a product, the overall yield is reduced. If a defect is found in a roughly sampled sample, there is a high possibility that defective products will be mixed in with the products from the previous sample to the current sample, which poses a reliability problem. Temporary failure of bonding equipment or ultrasonic oscillator,
It is difficult to detect by sampling inspection, and there is a risk of producing defective products. For this reason, in the case of products that require extremely high reliability, it is necessary to visually inspect all products, which poses a problem of low productivity.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情を考慮してなされたもので、超音波ボ
ン1イング装置の稼動率を下げることなく、確実に超音
波ボンディングの良・不良を判定することができる超音
波ボンディング検査方法及び装置を提供することを目的
とする。
The present invention has been made in consideration of the above circumstances, and is an ultrasonic bonding inspection method and apparatus that can reliably determine whether the ultrasonic bonding is good or bad without reducing the operating rate of the ultrasonic bonding device. The purpose is to provide

〔発明のW要〕[W essential of invention]

上記目的を達成するために本発明による超音波ボンディ
ング検査方法は、ボンディング時にボンディングツール
に印加される超音波波形を検出し、この検出された超音
波波形を標準超音波波形と比較することによりポンプイ
ングリ良否を判定することを特徴とづる。
In order to achieve the above object, the ultrasonic bonding inspection method according to the present invention detects an ultrasonic waveform applied to a bonding tool during bonding, and compares the detected ultrasonic waveform with a standard ultrasonic waveform. It is characterized by determining the quality of the ink.

また、本発明による超音波ボンディング検査装置は、ボ
ンディング時にボンディングツールに印加される超音波
波形を検出する波形検出部と、この検出部で検出された
超音波波形を記憶する波形メモリと、この波形メモリに
記憶された超音波波形から所定の特徴を抽出する特徴抽
出部と、良好なボンディングにおこなわれたときの標準
超音波波形から抽出された所定の特徴を記憶する標準波
形特徴メモリと、特徴抽出部により抽出された特徴を標
準波形特徴メモリに記憶された特徴と比較することによ
り、ポンプインクの良否を判定する判定部とを備えるこ
とを特徴とする。
Further, the ultrasonic bonding inspection apparatus according to the present invention includes a waveform detection unit that detects an ultrasonic waveform applied to a bonding tool during bonding, a waveform memory that stores the ultrasonic waveform detected by this detection unit, and a waveform memory that stores the ultrasonic waveform detected by this detection unit. a feature extraction unit that extracts predetermined features from the ultrasound waveform stored in the memory; a standard waveform feature memory that stores the predetermined features extracted from the standard ultrasound waveform when good bonding is performed; The present invention is characterized by comprising a determining section that determines whether the pump ink is good or bad by comparing the features extracted by the extracting section with the features stored in the standard waveform feature memory.

(発明の実施例〕 本発明の一実施例による超音波ボンディング検査装置を
第1図、第2図に示づ゛。題名波発振器11からの超音
波は振動子10に印加され、この振動子10を超音波で
撮動させる。この振動はホーン9を介してボンディング
ツール5に加えられる。ボンディングツール5はボンデ
ィングワイヤ7を挟持しており、そのボンディングワイ
ヤ7の先端にはボール4が形成されている。ボンディン
グ時にはボンディングツール5に超音波を印加し、半導
体ベレットのポンディングパッドにボール4を圧着する
。超音波ボンディング検査装置12は超音波発振器11
からの超音波波形を入力して超音波ボンディングの良否
を検査する。この超音波波形は表示装置13に表示され
る。
(Embodiment of the Invention) An ultrasonic bonding inspection apparatus according to an embodiment of the present invention is shown in FIGS. 1 and 2. Ultrasonic waves from a title wave oscillator 11 are applied to a vibrator 10, 10 is imaged using ultrasonic waves. This vibration is applied to the bonding tool 5 via the horn 9. The bonding tool 5 holds a bonding wire 7, and a ball 4 is formed at the tip of the bonding wire 7. During bonding, ultrasonic waves are applied to the bonding tool 5 to press the ball 4 to the bonding pad of the semiconductor pellet.
The quality of ultrasonic bonding is inspected by inputting the ultrasonic waveform from This ultrasonic waveform is displayed on the display device 13.

この超音波ボンディング検査装置12の詳細な構成を第
2図に示す。超音波発振器11からの超音波は波形検出
部21により検出され量子化されてデジタル信号に変換
される。超音波波形を示ずこのデジタル信号は波形メモ
リ22に記憶される。
The detailed configuration of this ultrasonic bonding inspection apparatus 12 is shown in FIG. 2. The ultrasonic wave from the ultrasonic oscillator 11 is detected by the waveform detection section 21, quantized, and converted into a digital signal. This digital signal, which does not represent an ultrasound waveform, is stored in the waveform memory 22.

特徴抽出部23はこの波形メモリ22の超音波波形から
後述する種々の特徴を抽出する−0一方、ボンディング
良好時の超音波波形から抽出した特徴を予め標準波形特
徴メモリ25に格納しておく。
The feature extraction unit 23 extracts various features, which will be described later, from the ultrasonic waveform in the waveform memory 22.Meanwhile, the features extracted from the ultrasonic waveform when bonding is good are stored in the standard waveform feature memory 25 in advance.

判定24はこの標準波形の特徴と特徴抽出123により
抽出された特徴を比較し、ボンディングの良否を判定し
、判定結果を出力する。
The determination 24 compares the features of this standard waveform with the features extracted by the feature extraction 123, determines whether the bonding is good or bad, and outputs the determination result.

特徴抽出部23において抽出される特徴は次の通りであ
る。
The features extracted by the feature extractor 23 are as follows.

■発振開始時間10  (第3図(a))。■Oscillation start time 10 (Figure 3 (a)).

ボンディングツール5に超音波を印加してから実際に発
振が開始されるまでの時間toである。
This is the time to from when ultrasonic waves are applied to the bonding tool 5 until oscillation actually starts.

■超音波波形のピーク値Vpとピーク値に到達するまで
の時間tp  (第3図(b))。
(2) Peak value Vp of the ultrasonic waveform and time tp until reaching the peak value (Fig. 3(b)).

超音波波形のピーク値■pと、発振開始からピーク値V
pに到達するまでの時間tpである。
The peak value ■p of the ultrasonic waveform and the peak value V from the start of oscillation
The time it takes to reach p is tp.

■超音波波形の立上り角度θ(第3図(C))。■Rise angle θ of ultrasonic waveform (Fig. 3 (C)).

発振開始時の超音波波形の立上り角度θである。This is the rising angle θ of the ultrasonic waveform at the start of oscillation.

■全面積S、部分面積ΔS、全面lasと部分面積ΔS
との比K(第3図(d)〉 全面積Sとは、超音波の全波形に対する積分値、すなわ
ち面積S(第3図(d)の右下り斜線部分)である。ま
た部分面積ΔSとは超音波波形が定常状態になるまでの
積分値(第3図(d)の左下り斜線部分)である。比に
は部分面積ΔS/全面積Sである。
■Total area S, partial area ΔS, total area las and partial area ΔS
The ratio K (Fig. 3 (d)) The total area S is the integral value for the entire waveform of the ultrasonic wave, that is, the area S (the downwardly shaded part to the right in Fig. 3 (d)).In addition, the partial area ΔS is the integral value until the ultrasonic waveform reaches a steady state (the lower left diagonal line in FIG. 3(d)).The ratio is partial area ΔS/total area S.

■理想超音波波形との類似度(第3図(e))。■Similarity to ideal ultrasound waveform (Fig. 3(e)).

検出された超音波波形(実数)と理想超音波波形(破線
)との差の絶対値の積分値(斜線部)である。
This is the integral value (shaded area) of the absolute value of the difference between the detected ultrasonic waveform (real number) and the ideal ultrasonic waveform (broken line).

判定部24ではこれら特徴を組合せて総合的にボンディ
ングの良否を判定する。なお、ボンディング不良には多
くの種類があるが、例えば、■ボンディングツールが非
接触の場合、■ボンディングワイヤの先端に形成された
ボールが小さい場合、■ボンディング位置ずれの場合、
■ボンディング荷重不足の場合がある。特徴抽出、およ
び判定動作は、次のボンディングによる超音波波形が入
力するまでの短期間ぐ終了覆るようにしておく必要があ
る。
The determination unit 24 combines these features and comprehensively determines the quality of the bonding. There are many types of bonding defects, but for example: ■ When the bonding tool is non-contact, ■ When the ball formed at the tip of the bonding wire is small, ■ When the bonding position is misaligned,
■There may be insufficient bonding load. The feature extraction and determination operations must be completed for a short period of time until the next bonding ultrasonic waveform is input.

このように本実施例では、ボンディング時の超音波波形
によりボンディングの良否が判定できる。
In this manner, in this embodiment, the quality of bonding can be determined based on the ultrasonic waveform during bonding.

この判定は次のボンディング時までにおこなうことがで
きるので、全てのボンディング動作に対して検査するこ
とができ、しかも直らに良不良が判定できるので1ボン
ディング不良時に短期間で対処することができる。また
ボンディング動作を停止させることなく検査ができるの
で従来のように稼動率が下がることがない。さらにボン
ディング装置や超音波発振器の一時的な故障を直ちに検
出することができ、迅速な対応が可能であり、信頼性の
向上と歩留りの向上が期待できる。さらに従来はボンデ
ィング条件を熟Illのがんに頼って定めていたが、本
実施例によればボンディング不良を数値的に把握するこ
とができ、最適のボンディング条件の設定が可能である
Since this determination can be made before the next bonding, all bonding operations can be inspected, and since pass/fail can be determined immediately, it is possible to deal with a single bonding failure in a short period of time. In addition, since inspection can be performed without stopping the bonding operation, the operating rate does not decrease as in the conventional case. Furthermore, it is possible to immediately detect temporary failures in bonding equipment and ultrasonic oscillators, allowing prompt response, and is expected to improve reliability and yield. Further, conventionally, bonding conditions were determined based on the degree of ripeness, but according to this embodiment, bonding defects can be numerically grasped, and optimal bonding conditions can be set.

本発明は上記実施例に限らず種々の変形が可能である。The present invention is not limited to the above-mentioned embodiments, and various modifications are possible.

なお、実際に測定したボンディング時の超音波波形を第
4図に示ず。理想的ボンディング時の超音波形は斜線で
示した領域(△)に含まれる。波形(B)〜(E)はボ
ンディング不良時の波形である。超音波波形(B)はボ
ンディングツールが非接触で無負荷の場合である。ピー
ク値Vpが高くなっている。超音波形(C)はボンディ
ング時の荷電が低い場合である。ピーク値Vpが波形゛
(B)はどではないが高くなっている。超音波形(D)
は、半導体ベレットへのボンディング時に、ボンディン
グ時の位置がずれた場合又はボンディング荷電が大きな
場合である。ピーク値VDが低くなっている。超音波波
形(E)はボンディングワイヤが切断して先端にボール
がない状態でボンディングした場合である。ピーク値V
pが低く大きく変動している。
Note that the ultrasonic waveform actually measured during bonding is not shown in FIG. The ultrasonic wave pattern during ideal bonding is included in the shaded area (△). Waveforms (B) to (E) are waveforms when bonding is defective. The ultrasonic waveform (B) is the case where the bonding tool is non-contact and has no load. The peak value Vp is high. The ultrasonic type (C) is a case where the charge during bonding is low. The peak value Vp is higher than the waveform (B). Ultrasonic type (D)
This is a case where the position at the time of bonding is shifted or the bonding charge is large during bonding to the semiconductor pellet. The peak value VD is low. The ultrasonic waveform (E) is when the bonding wire is cut and bonding is performed with no ball at the tip. Peak value V
p is low and fluctuates widely.

(発明の効果) 以上の通り本発明によれば超音波ボンディング装置の稼
動率を下げることなく、確実にボンディングの良不良を
判定することができる。
(Effects of the Invention) As described above, according to the present invention, it is possible to reliably determine whether bonding is good or bad without reducing the operating rate of the ultrasonic bonding apparatus.

【図面の簡単な説明】[Brief explanation of drawings]

第1図、第2図は本発明の一実施例による超音波ボンデ
ィング検査装置のブロック図、第3図は同検査装置のお
ける特徴の具体例を説明するための図、第4図は実際の
超音波波形を示すグラフ、第5図は基本的なボンディン
グシーケンスを示す図である。 1・・・リードフレーム、2・・・半導体ベレット、3
・・・ポンディングパッド、4・・・ボール、5・・・
ボンディングツール、6・・・クランプ、7・・・ボン
ディングワイヤ、8・・・電気トーチ、9・・・ホーン
、10・・・振動子、11・・・超音波発ii器、12
・・・超音波ボンディング検査装置、13・・・表示装
置。 出願人代理人  佐  藤  −雄 第1図 第2図
1 and 2 are block diagrams of an ultrasonic bonding inspection device according to an embodiment of the present invention, FIG. 3 is a diagram for explaining a specific example of the characteristics of the same inspection device, and FIG. 4 is a diagram of an actual ultrasonic bonding inspection device. A graph showing an ultrasonic waveform, FIG. 5 is a diagram showing a basic bonding sequence. 1...Lead frame, 2...Semiconductor pellet, 3
...Pounding pad, 4...Ball, 5...
Bonding tool, 6... Clamp, 7... Bonding wire, 8... Electric torch, 9... Horn, 10... Vibrator, 11... Ultrasonic generator II, 12
... Ultrasonic bonding inspection device, 13... Display device. Applicant's agent Mr. Sato Figure 1 Figure 2

Claims (1)

【特許請求の範囲】 1、超音波をボンディングツールに印加することにより
ボンディングワイヤを半導体ペレットまたはインナーリ
ードにボンディングする超音波ボンディング検査方法に
おいて、 ボンディング時に前記ボンディングツールに印加される
超音波を検出し、 この検出された超音波波形を標準超音波波形と比較する
ことによりボンディングの良否を判定することを特徴と
する超音波ボンディング検査方法。 2、超音波をボンディングツールに印加することにより
ボンディングワイヤを半導体ペレットまたはインナーリ
ードにボンディングする超音波ボンディング検査装置に
おいて、 ボンディング時に前記ボンディングツールに印加される
超音波波形を検出する波形検出部と、この検出部で検出
された超音波波形を記憶する波形メモリと、 この波形メモリに記憶された超音波波形から所定の特徴
を抽出する特徴抽出部と、 良好なボンディングにおこなわれたときの標準超音波波
形から抽出された前記所定の特徴を記憶する標準波形特
徴メモリと、 前記特徴抽出部により抽出された特徴を前記標準波形特
徴メモリに記憶された特徴と比較することにより、ボン
ディングの良否を判定する判定部と を備えることを特徴とする超音波ボンディング検査装置
[Claims] 1. In an ultrasonic bonding inspection method for bonding a bonding wire to a semiconductor pellet or an inner lead by applying ultrasonic waves to a bonding tool, the ultrasonic waves applied to the bonding tool during bonding are detected. An ultrasonic bonding inspection method characterized in that the quality of the bonding is determined by comparing the detected ultrasonic waveform with a standard ultrasonic waveform. 2. In an ultrasonic bonding inspection device that bonds a bonding wire to a semiconductor pellet or an inner lead by applying ultrasonic waves to a bonding tool, a waveform detection unit that detects an ultrasonic waveform applied to the bonding tool during bonding; A waveform memory that stores the ultrasonic waveform detected by this detection unit, a feature extraction unit that extracts predetermined features from the ultrasonic waveform stored in this waveform memory, and a standard a standard waveform feature memory that stores the predetermined features extracted from the acoustic waveform; and a comparison of the features extracted by the feature extractor with the features stored in the standard waveform feature memory to determine whether the bonding is good or bad. An ultrasonic bonding inspection device comprising: a determination unit that performs
JP60216879A 1985-09-30 1985-09-30 Method and apparatus for inspecting ultrasonic bonding Granted JPS6276731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60216879A JPS6276731A (en) 1985-09-30 1985-09-30 Method and apparatus for inspecting ultrasonic bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60216879A JPS6276731A (en) 1985-09-30 1985-09-30 Method and apparatus for inspecting ultrasonic bonding

Publications (2)

Publication Number Publication Date
JPS6276731A true JPS6276731A (en) 1987-04-08
JPH0548624B2 JPH0548624B2 (en) 1993-07-22

Family

ID=16695342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60216879A Granted JPS6276731A (en) 1985-09-30 1985-09-30 Method and apparatus for inspecting ultrasonic bonding

Country Status (1)

Country Link
JP (1) JPS6276731A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608855A (en) * 1991-09-09 1997-03-04 Hitachi, Ltd. Method of and system for displaying three-dimensional curve on two-dimensional display device
US8714015B2 (en) 2009-03-31 2014-05-06 Toyota Jidosha Kabushiki Kaisha Joint quality inspection and joint quality inspection method
CN111599709A (en) * 2020-05-29 2020-08-28 上海华力微电子有限公司 Method for detecting wafer bonding interface defects and storage medium

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197940A (en) * 1984-10-19 1986-05-16 Hitachi Ltd Inspecting device for electronic parts
JPS61144837A (en) * 1984-12-19 1986-07-02 Seiko Epson Corp Inspecting device for bonding

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197940A (en) * 1984-10-19 1986-05-16 Hitachi Ltd Inspecting device for electronic parts
JPS61144837A (en) * 1984-12-19 1986-07-02 Seiko Epson Corp Inspecting device for bonding

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5608855A (en) * 1991-09-09 1997-03-04 Hitachi, Ltd. Method of and system for displaying three-dimensional curve on two-dimensional display device
US8714015B2 (en) 2009-03-31 2014-05-06 Toyota Jidosha Kabushiki Kaisha Joint quality inspection and joint quality inspection method
CN111599709A (en) * 2020-05-29 2020-08-28 上海华力微电子有限公司 Method for detecting wafer bonding interface defects and storage medium
CN111599709B (en) * 2020-05-29 2022-03-29 上海华力微电子有限公司 Method for detecting wafer bonding interface defects and storage medium

Also Published As

Publication number Publication date
JPH0548624B2 (en) 1993-07-22

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