JPH056661Y2 - - Google Patents
Info
- Publication number
- JPH056661Y2 JPH056661Y2 JP1988117363U JP11736388U JPH056661Y2 JP H056661 Y2 JPH056661 Y2 JP H056661Y2 JP 1988117363 U JP1988117363 U JP 1988117363U JP 11736388 U JP11736388 U JP 11736388U JP H056661 Y2 JPH056661 Y2 JP H056661Y2
- Authority
- JP
- Japan
- Prior art keywords
- vibration
- waveform
- capillary
- wired
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000001514 detection method Methods 0.000 claims description 9
- 230000005856 abnormality Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000011179 visual inspection Methods 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/788—Means for moving parts
- H01L2224/78821—Upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/78822—Rotational mechanism
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
- H01L2224/8212—Aligning
- H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
- H01L2224/8218—Translational movements
- H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
Description
【考案の詳細な説明】
〔概要〕
被配線物と被配線物を保持するワークステージ
との間に振動検出素子を設けて振動波形を測定
し、キヤピラリの振動状態が良好であるときの振
動波形と比較することによつて、キヤピラリの摩
耗等による振動状態の変化を監視し、接合の品質
を管理する。[Detailed explanation of the invention] [Summary] A vibration detection element is provided between the wiring target and the work stage that holds the wiring target, and the vibration waveform is measured, and the vibration waveform when the capillary is in a good vibration state is measured. By comparing the results with the above, changes in the vibration state due to capillary wear, etc. can be monitored and the quality of the joint can be controlled.
本考案は、IC・LSI等の半導体製品の製造にお
いて、半導体チツプの電極部とパツケージ導体部
との配線に用いられる超音波ワイヤボンダに関す
る。
The present invention relates to an ultrasonic wire bonder used for wiring between electrodes of semiconductor chips and package conductors in the manufacture of semiconductor products such as ICs and LSIs.
第６図は代表的な超音波ワイヤボンダの外観を
表す図である。圧電素子等で造られた振動子１２
に交番電圧を印加することにより発生する超音波
振動はコーン１７、ホーン１３を経てキヤピラリ
１４へ伝達され、キヤピラリ１４内に通されたワ
イヤ１１を超音波振動させる。第７図に表される
ように、この超音波振動するワイヤ１１を所定の
荷重で半導体チツプ２１の電極部に圧接すること
により接合せしめ（第(A)欄）、次いでパツケージ
導体部２２へ圧接することにより（第(B)欄）配線
が形成される。この時ワイヤ１１と被配線物２
１，２２両者の界面において両物資の原子が相互
移動し、あるいは両物資が局部的に融解すること
により両者が接続される。
FIG. 6 is a diagram showing the appearance of a typical ultrasonic wire bonder. Vibrator 12 made of piezoelectric element etc.
Ultrasonic vibrations generated by applying an alternating voltage are transmitted to the capillary 14 via the cone 17 and the horn 13, causing the wire 11 passed through the capillary 14 to vibrate ultrasonically. As shown in FIG. 7, this ultrasonically vibrating wire 11 is pressed against the electrode part of the semiconductor chip 21 with a predetermined load to bond it (column (A)), and then to the package conductor part 22. By doing so (column (B)), wiring is formed. At this time, the wire 11 and the wired object 2
1, 22 At the interface between the two substances, the atoms of the two substances mutually move or the two substances locally melt, thereby connecting the two substances.
形成された接合の強度は、キヤピラリ１４から
被配線物２１，２２へかけられる荷重と、ワイヤ
１１に与えられる超音波振動のエネルギの強度
と、超音波振動の印加時間とに依存する。キヤピ
ラリにかけられる荷重と振動子１２へ印加される
エネルギと印加時間とを一定に保つても、実際に
加えられる荷重やワイヤ１１へ伝達される超音波
エネルギの強度は、キヤピラリの摩耗等の機械的
な原因で変化してしまい、そのために接合の品質
が変動してしまう。 The strength of the formed bond depends on the load applied from the capillary 14 to the wired objects 21 and 22, the intensity of the energy of the ultrasonic vibration applied to the wire 11, and the application time of the ultrasonic vibration. Even if the load applied to the capillary, the energy applied to the transducer 12, and the application time are kept constant, the actual load applied and the intensity of the ultrasonic energy transmitted to the wire 11 will be affected by mechanical factors such as wear of the capillary. The quality of the bond changes due to various reasons.
製品における接合の品質を一定以上に保つため
に行われる試験としては、顕微鏡による外観検査
で接合部分の玉の大きさを見る方法、接合強度試
験機によつて接合力を測定する方法等がある。こ
のうち接合強度試験機による測定では、第７図Ｘ
方向へ力を加えてボール剪断力を試験すること
と、Ｙ方向へ力を加えてワイヤ引張強度を試験す
ることとが行われる。 Tests carried out to maintain the quality of joints in products above a certain level include methods such as visual inspection using a microscope to check the size of the beads in the joints, and methods to measure the joint force using a joint strength tester. . Among these, when measured using a joint strength tester, Fig. 7
A force is applied in the direction to test the ball shear force, and a force is applied in the Y direction to test the wire tensile strength.
顕微鏡による外観検査は多大な労力を要し、接
合強度試験機による試験も労力を要すると共に破
壊試験であるという性格を有する。したがつてど
ちらの方法も製品の全数にわたつて行うことは本
質的に不可能であり、試験する製品の割合を大き
くすることも現実的ではない。
Visual inspection using a microscope requires a great deal of labor, and testing using a bonding strength tester also requires labor and is a destructive test. Therefore, it is essentially impossible to perform either method on all products, and it is also impractical to increase the proportion of products to be tested.
したがつて本考案の目的は、運転コストを増大
させることなく、ほぼ全数にわたつて接合の品質
の変化を監視することの可能な超音波ワイヤボン
ダを提供することにある。 Accordingly, an object of the present invention is to provide an ultrasonic wire bonder that can monitor changes in the quality of bonding over almost all the units without increasing operating costs.
前述したように、接合の品質に実質的に影響を
与える最も大きな要因は、キヤピラリの摩耗等の
機械的条件の変化によつてキヤピラリの振動状態
が変化することであることに着目し、本考案者は
第１図に示されるような超音波ワイヤボンダを考
案するに至つた。
As mentioned above, we focused on the fact that the most significant factor that substantially affects the quality of bonding is the change in the vibration state of the capillary due to changes in mechanical conditions such as wear of the capillary, and developed the present invention. The inventor has devised an ultrasonic wire bonder as shown in FIG.
図において、振動子１２に交番電圧が印加され
ることにより発生した超音波振動はコーン１７、
ホーン１３を経てキヤピラリ１４へ伝達され、ワ
イヤ１１を振動させて被配線物２４へ接合する。
被配線物２４とワークステージ２３との間には例
えば圧電素子よりなる振動検出素子３０が挟持さ
れており、キヤピラリ１４の振動状態に応じた信
号を発生する。振動検出素子３０で発生した信号
は増幅器３１で増幅され基準波形記憶手段３２と
振動状態判定手段３３へ供給される。基準波形記
憶手段３２はキヤピラリ１４等の状態が正常と判
断される時の信号波形を基準波形として記憶す
る。振動状態判定手段３３は基準波形と現在の測
定した波形とを比較し、その差が所定の偏差以上
であれば異常と判定する。 In the figure, the ultrasonic vibrations generated by applying an alternating voltage to the vibrator 12 are caused by a cone 17,
It is transmitted to the capillary 14 via the horn 13, vibrates the wire 11, and joins it to the wired object 24.
A vibration detection element 30 made of, for example, a piezoelectric element is sandwiched between the wiring target 24 and the work stage 23, and generates a signal corresponding to the vibration state of the capillary 14. A signal generated by the vibration detection element 30 is amplified by an amplifier 31 and supplied to a reference waveform storage means 32 and a vibration state determination means 33. The reference waveform storage means 32 stores a signal waveform when the state of the capillary 14 etc. is determined to be normal as a reference waveform. The vibration state determining means 33 compares the reference waveform and the currently measured waveform, and determines that the waveform is abnormal if the difference is greater than a predetermined deviation.
振動検出素子３０が検出する波形はキヤピラリ
１４あるいはワイヤ１１の振動状態を反映してい
るものと考えられるから、基準波形記憶手段３２
において正常時の波形を記憶しておき、これと比
較するこよによりリアルタイムに、人手を経ずに
良否の判定が可能となる。
Since the waveform detected by the vibration detection element 30 is considered to reflect the vibration state of the capillary 14 or the wire 11, the reference waveform storage means 32
By storing the normal waveform and comparing it with this, it becomes possible to judge whether the product is good or bad in real time without any manual intervention.
第２図はキヤピラリ１４の振動条件の変化によ
り振動検出素子で検出される波形の状態の変化を
測定するための装置を表す図である。図において
キヤピラリ１４の先端部は圧電素子２４１の面に
直接接触しており、圧電素子２４１に発生する電
圧がストレージスコープへ導かれ、波形が観測さ
れる。
FIG. 2 is a diagram showing a device for measuring changes in the state of the waveform detected by the vibration detection element due to changes in the vibration conditions of the capillary 14. In the figure, the tip of the capillary 14 is in direct contact with the surface of the piezoelectric element 241, and the voltage generated in the piezoelectric element 241 is guided to the storage scope, and its waveform is observed.
第３図は第２図の装置で測定された振動波形を
表しており、Ａ欄は振動エネルギがAmW、印加
時間がBmsec及び荷重がCgfの条件、Ｂ欄は振動
エネルギが8.2AmW、印加時間1.3Bmsec及び荷
重が1.6Cgfの条件で測定されたものである。図に
明らかなように、振動エネルギ及び荷重を変化さ
せると振動の振幅ばかりか振動の波形そのものも
変化することがわかる。したがつて、この波形の
変化の状態を自動的に監視すれば、接合の品質を
自動的に監視することができる。 Figure 3 shows the vibration waveforms measured with the device shown in Figure 2. Column A shows the conditions of vibration energy AmW, application time Bmsec, and load Cgf, and column B shows the vibration energy 8.2AmW and application time. Measured under the conditions of 1.3Bmsec and 1.6Cgf load. As is clear from the figure, when the vibration energy and load are changed, not only the vibration amplitude but also the vibration waveform itself changes. Therefore, by automatically monitoring the state of change in this waveform, the quality of the bond can be automatically monitored.
第４図は本考案の超音波ワイヤボンダの一実施
例を表す図である。第６図と同一の構成要素には
同一の参照番号を付して説明を省略する。被配線
物２４とワークステージ２３との間にはキヤピラ
リ１４の振動状態を検出するための圧電素子３０
１が挟持されている。圧電素子３０１から伸びる
リード線は増幅器３１に接続されており、圧電素
子３０１で発生した電圧を増幅し、Ａ／Ｄ変換器
３６へ供給する。Ａ／Ｄ変換器３６は一定周期で
アナログーデジタル変換を行い、信号をデジタル
信号としてマイクロコンピユータ３５へ供給す
る。マイクロコンピユータ３５は演算・比較処理
等を行うCPU、波形記憶等のためのRAM、ソフ
トウエアプログラムの格納のためのROM、良否
の表示のための表示器、Ａ／Ｄ変換器３６からデ
ジタルデータを取り込むための入力インターフエ
ース、及びボンデイング装置の制御信号を送出す
るための出力インターフエース等を備えている。 FIG. 4 is a diagram showing an embodiment of the ultrasonic wire bonder of the present invention. Components that are the same as those in FIG. 6 are given the same reference numerals and their explanations will be omitted. A piezoelectric element 30 is provided between the wired object 24 and the work stage 23 for detecting the vibration state of the capillary 14.
1 is being held. A lead wire extending from the piezoelectric element 301 is connected to an amplifier 31 , which amplifies the voltage generated by the piezoelectric element 301 and supplies it to an A/D converter 36 . The A/D converter 36 performs analog-to-digital conversion at regular intervals and supplies the signal to the microcomputer 35 as a digital signal. The microcomputer 35 includes a CPU for performing arithmetic and comparison processing, a RAM for storing waveforms, etc., a ROM for storing software programs, a display for indicating pass/fail, and digital data from an A/D converter 36. It is equipped with an input interface for importing, an output interface for transmitting control signals of the bonding device, and the like.
尚、ワークステージ２３に凹部を設け、圧電素
子３０１はこの凹部の中に表面が被配線物２４と
当接するように設けてもよい。 Note that the work stage 23 may be provided with a recessed portion, and the piezoelectric element 301 may be provided in this recessed portion so that its surface is in contact with the wiring target 24.
第５図はマイクロコンピユータ３５のためのソ
フトウエアのフローチヤートであり、第１図の基
準波形記憶手段３２並びに振動状態判定手段３３
を実現するものである。 FIG. 5 is a flowchart of software for the microcomputer 35, and includes the reference waveform storage means 32 and vibration state determination means 33 of FIG.
This is to realize the following.
まずＡ／Ｄ変換器３６からの入力を監視し、所
定の閾値を超えたらボンデイング開始と判断し
（ステツプａ）、所定期間内でＡ／Ｄ変換器３６か
らの値を取り込むことによつて波形を入力する
（ステツプｂ）。基準波形のデータが記憶されてい
なければ（ステツプｃ）、入力した波形を基準波
形として記憶する（ステツプｋ）。基準波形が記
憶されておれば、それと入力した波形とを比較す
る（ステツプｄ）。この比較に際しては例えば比
較する全領域にわたつて両者の値の差が所定の範
囲内であるかを判定するか、あるいは両者の差の
２乗和が所定の値以内であるかを判定する等の処
理を行う。両者が一致していると判定されれば”
良好”を表す表示を表示器へ出力し（ステツプ
ｆ）、次のボンデイング処理へ移る。両者の差が
不一致であると判定されれば“不良”を表す表示
を表示器へ出力し（ステツプｇ）、ボンデイング
を停止する（ステツプｈ）。キヤピラリ交換等の
処理後、再起動の指令が入力されたら（ステツプ
ｉ）、基準波形のデータをクリアした後（ステツ
プｊ）、ボンデイングを再開する（ステツプｍ）。 First, the input from the A/D converter 36 is monitored, and when it exceeds a predetermined threshold value, it is determined that bonding has started (step a), and the waveform is determined by taking in the value from the A/D converter 36 within a predetermined period. (step b). If the reference waveform data is not stored (step c), the input waveform is stored as the reference waveform (step k). If a reference waveform is stored, it is compared with the input waveform (step d). In this comparison, for example, it is determined whether the difference between the two values is within a predetermined range over the entire region to be compared, or whether the sum of the squares of the differences between the two is within a predetermined value. Process. If it is determined that the two match.”
A display indicating "good" is output to the display (step f), and the process moves on to the next bonding process.If it is determined that the difference between the two is inconsistent, a display indicating "defective" is output to the display (step g). ), the bonding is stopped (step h). After capillary replacement, etc., a restart command is input (step i), the reference waveform data is cleared (step j), and the bonding is restarted (step m).
第１図は本考案の原理図、第２図は振動条件の
変化により振動検出素子で検出される波形の状態
の変化を測定するための装置を表す図、第３図は
第２図の装置により得られた振動波形を表す図、
第４図は本考案の実施例を表す図、第５図はマイ
クロコンピユータのソフトウエアのフローチヤー
ト、第６図は代表的な超音波ワイヤボンダの外観
を表す図、第７図はワイヤボンデイングの方法を
説明する図、
図において、１１……ワイヤ、１２……振動
子、１３……ホーン、１４……キヤピラリ、１７
……コーン、２３……ワークステージ、２４……
被配線物、３０……振動検出素子。
Figure 1 is a diagram of the principle of the present invention, Figure 2 is a diagram showing a device for measuring changes in the state of the waveform detected by the vibration detection element due to changes in vibration conditions, and Figure 3 is the device shown in Figure 2. A diagram showing the vibration waveform obtained by
Fig. 4 is a diagram showing an embodiment of the present invention, Fig. 5 is a flowchart of the microcomputer software, Fig. 6 is a diagram showing the appearance of a typical ultrasonic wire bonder, and Fig. 7 is a wire bonding method. In the figure, 11... wire, 12... vibrator, 13... horn, 14... capillary, 17
... Corn, 23 ... Work stage, 24 ...
Wired object, 30... Vibration detection element.
Claims (1)
動せしめつつ被配線物２４へ圧接して被配線物２
４に所定の配線を形成せしめる超音波ワイヤボン
ダにおいて、 該被配線物２４と該被配線物２４を保持するワ
ークステージ２３との間に挟持され、該超音波振
動の強度に応じた信号を出力する振動検出素子３
０と、 該振動検出素子３０が出力する出力信号を増幅
する増幅器３１と、該キヤピラリ１４の振動状態
が良好である時の該出力信号の波形を基準波形と
して記憶する基準波形記憶手段３２と、 該出力信号の波形と該基準波形との差が所定の
偏差以上である時に異常と判定する振動状態判定
手段３３とを具備することを特徴とする超音波ワ
イヤボンダ。[Utility Model Claims] The capillary 14 through which the wire 11 is passed is ultrasonically vibrated and pressed against the wired object 24 to fix the wired object 2
In an ultrasonic wire bonder that forms a predetermined wiring on an object to be wired 24, a vibration detection element 3 is sandwiched between the object to be wired 24 and a work stage 23 that holds the object to be wired 24, and outputs a signal corresponding to the intensity of the ultrasonic vibration.
0, an amplifier 31 which amplifies the output signal outputted by the vibration detection element 30, a reference waveform storage means 32 which stores the waveform of the output signal when the vibration state of the capillary 14 is good as a reference waveform, and a vibration state determination means 33 which determines that an abnormality has occurred when the difference between the waveform of the output signal and the reference waveform is equal to or greater than a predetermined deviation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988117363U JPH056661Y2 (en) | 1988-09-08 | 1988-09-08 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1988117363U JPH056661Y2 (en) | 1988-09-08 | 1988-09-08 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0238739U JPH0238739U (en) | 1990-03-15 |
| JPH056661Y2 true JPH056661Y2 (en) | 1993-02-19 |
Family
ID=31360759
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1988117363U Expired - Lifetime JPH056661Y2 (en) | 1988-09-08 | 1988-09-08 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH056661Y2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4998664A (en) * | 1989-12-22 | 1991-03-12 | Hughes Aircraft Company | Bond signature analyzer |
| JP5152159B2 (en) * | 2009-11-23 | 2013-02-27 | トヨタ自動車株式会社 | Tool inspection method, inverter manufacturing method |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117743A (en) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | Method of judgement for junction state in wire bonding |
-
1988
- 1988-09-08 JP JP1988117363U patent/JPH056661Y2/ja not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60117743A (en) * | 1983-11-30 | 1985-06-25 | Toshiba Corp | Method of judgement for junction state in wire bonding |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0238739U (en) | 1990-03-15 |
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