JPH0548624B2 - - Google Patents

Info

Publication number
JPH0548624B2
JPH0548624B2 JP60216879A JP21687985A JPH0548624B2 JP H0548624 B2 JPH0548624 B2 JP H0548624B2 JP 60216879 A JP60216879 A JP 60216879A JP 21687985 A JP21687985 A JP 21687985A JP H0548624 B2 JPH0548624 B2 JP H0548624B2
Authority
JP
Japan
Prior art keywords
bonding
ultrasonic
waveform
standard
tool
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60216879A
Other languages
Japanese (ja)
Other versions
JPS6276731A (en
Inventor
Mitsusada Shibasaka
Masayuki Okino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Mechatronics Co Ltd
Toshiba Corp
Original Assignee
Toshiba Corp
Toshiba Seiki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Seiki Co Ltd filed Critical Toshiba Corp
Priority to JP60216879A priority Critical patent/JPS6276731A/en
Publication of JPS6276731A publication Critical patent/JPS6276731A/en
Publication of JPH0548624B2 publication Critical patent/JPH0548624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301—Capillary
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/82—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI]
    • H01L2224/8212—Aligning
    • H01L2224/82148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/82169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, e.g. nozzle
    • H01L2224/8218—Translational movements
    • H01L2224/82181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Wire Bonding (AREA)

Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は超音波ボンデイングの良否をはんてい
する超音波ボンデイング検査方法及び装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an ultrasonic bonding inspection method and apparatus for determining the quality of ultrasonic bonding.

〔発明の技術的背景とその問題点〕[Technical background of the invention and its problems]

半導体ペレツトとリードフレームの間を電気的
に接続するために、ボンデイング装置が用いられ
る。ボンデイング装置は金線などのボンデイング
ワイヤを、半導体ペレツトのボンデイングパツド
とリードフレームのインナーリードに接続するも
のであり、第５図に示すような基本的なボンデイ
ングシーケンスが採用されている。 Bonding equipment is used to make electrical connections between the semiconductor pellet and the lead frame. The bonding device connects a bonding wire such as a gold wire to a bonding pad of a semiconductor pellet and an inner lead of a lead frame, and employs a basic bonding sequence as shown in FIG. 5.

まず、リードフレームのベツド１上に載置され
た半導体ペレツト２のボンデイングパツド３の真
上に、先端にボール４が形成されたボンデイング
ワイヤ７を挟持するツール５が移動する。（第５
図ａ）。 First, a tool 5 that holds a bonding wire 7 having a ball 4 formed at its tip is moved directly above the bonding pad 3 of the semiconductor pellet 2 placed on the bed 1 of the lead frame. (5th
Diagram a).

次にツール５は下降して、ボンデイングワイヤ
７の先端のボール４をボンデイングパツド３に圧
着する。このときツール５を超音波で振動させる
ことにより圧着をおこなう（第５図ｂ）。ボンデ
イング後、ツール５を上昇させ（第５図ｃ）た
後、ツール５または半導体ペレツト２を移動し、
ツール５が次のボンデイング位置すなわちリード
フレーム１のインナーリード９の真上にくるよう
にする（第５図ｄ）。次にツール５を下降させイ
ンナーリード９にボンデイングワイヤ７を圧着す
る（第５図ｅ）。このときツール５に超音波を印
加する。次にツール５を上昇させてボンデイング
ワイヤ７を引つぱつて圧着部分から切断し（第５
図ｆ）た後、電気トーチ８でボンデイングワイヤ
７の先端にボールを形成し次の接続に備える（第
５図ｇ）。 Next, the tool 5 descends and presses the ball 4 at the tip of the bonding wire 7 onto the bonding pad 3. At this time, crimping is performed by vibrating the tool 5 with ultrasonic waves (FIG. 5b). After bonding, after raising the tool 5 (FIG. 5c), moving the tool 5 or the semiconductor pellet 2,
The tool 5 is brought to the next bonding position, that is, directly above the inner leads 9 of the lead frame 1 (FIG. 5d). Next, the tool 5 is lowered and the bonding wire 7 is crimped onto the inner lead 9 (FIG. 5e). At this time, ultrasonic waves are applied to the tool 5. Next, raise the tool 5 and pull the bonding wire 7 to cut it from the crimped part (fifth
After that, a ball is formed at the tip of the bonding wire 7 using an electric torch 8 in preparation for the next connection (FIG. 5g).

かかるボンデイングを良好におこなうために
は、ボンデイング装置の使用開始時、半導体ペレ
ツトの品種変更時、ボンデイング条件変更時に最
良のボンデイング条件を定めることが必要であ
る。このためボンデイング工程において、多くの
サンプルを抜きとりワイヤの引張り強度ボン
デイング部のはく離強度ワイヤの引張りによる
断線形状ボールおよびワイヤの形状等を検査工
具や顕微鏡による目視検査により測定し、ボンデ
インクの良・不良を検査している。かかる検査
を、最良のボンデイング条件が発見されるまでお
こなう。 In order to perform such bonding well, it is necessary to determine the best bonding conditions when starting to use the bonding equipment, when changing the type of semiconductor pellet, and when changing the bonding conditions. For this reason, in the bonding process, many samples are taken out and the tensile strength of the wire, the peeling strength of the bonding part, the shape of the broken wire due to the tension of the wire, the shape of the ball and the wire, etc. are measured by visual inspection using inspection tools and a microscope. is being inspected. Such testing is continued until the best bonding conditions are found.

しかしながら上述の検査ではサンプルを抜き取
る度にボンデイング装置を停止させなければなら
ず、生産効率を下げる結果となる。また抜き取り
検査であるため、サンプルに不良品がなくても抜
き取られなかつた製品に不良品が混在するという
可能性があり、全数検査に比べて劣る本質的な問
題がある。また抜きとられたサンプルは製品とし
て用いられないので全体の歩留りを下げる結果と
なる。さらに抜きとられたサンプルに不良が発見
された場合、前回の抜き取りから今回の抜き取り
までの間の製品に不良品が混在する可能性が高く
信頼性に問題がある。ボンデイング装置や超音波
発振器の一時的な故障を、抜きとり検査により発
見することは困難であり、不良品を発生させるお
それがある。このため極めて高い信頼性が要求さ
れる製品では全数の目視検査を行う必要があり、
生産性が低くなるという問題がある。 However, in the above-mentioned inspection, the bonding apparatus must be stopped every time a sample is taken, which results in a decrease in production efficiency. Furthermore, since it is a sampling inspection, even if there are no defective products in the sample, there is a possibility that defective products may be mixed in with the products that were not sampled, which is an inherent problem that is inferior to a 100% inspection. Moreover, since the extracted sample is not used as a product, the overall yield is reduced. Furthermore, if a defect is found in the sample that has been sampled, there is a high possibility that defective products will be included in the products from the previous sample to the current sample, which poses a reliability problem. It is difficult to detect temporary failures in bonding equipment or ultrasonic oscillators by sampling inspection, and there is a risk that defective products may be produced. For this reason, for products that require extremely high reliability, it is necessary to visually inspect all products.
There is a problem of low productivity.

〔発明の目的〕[Purpose of the invention]

本発明は上記事情を考慮してなされたもので、
超音波ボンデイング装置の稼動率を下げることな
く、確実に超音波ボンデイングの良・不良を判定
することができる超音波ボンデイング検査方法及
び装置を提供することを目的とする。 The present invention was made in consideration of the above circumstances, and
It is an object of the present invention to provide an ultrasonic bonding inspection method and apparatus that can reliably determine whether ultrasonic bonding is good or bad without reducing the operating rate of the ultrasonic bonding apparatus.

〔発明の概要〕[Summary of the invention]

上記目的を達成するために本発明による超音波
ボンデイング検査方法は、ボンデイグ時にボンデ
イングツールに印加される超音波波形を検出し、
この検出された超音波波形を標準超音波波形と比
較することによりボンデイングり良否を判定する
ことを特徴とする。 In order to achieve the above object, an ultrasonic bonding inspection method according to the present invention detects an ultrasonic waveform applied to a bonding tool during bonding,
The method is characterized in that the quality of the bonding is determined by comparing the detected ultrasonic waveform with a standard ultrasonic waveform.

また、本発明による超音波ボンデイング検査装
置は、ボンデイング時にボンデイングツールに印
加される超音波波形を検出する波形検出部と、こ
の検出部で検出された超音波波形を記憶する波形
メモリと、この波形メモリに記憶された超音波波
形から所定の特徴を抽出する特徴抽出部と、良好
なボンデイングにおこなわれたときの標準超音波
波形から抽出された所定の特徴を記憶する標準波
形特徴メモリと、特徴抽出部により抽出された特
徴を標準波形特徴メモリに記憶された特徴と比較
することにより、ボンデイングの良否を判定する
判定部とを備えることを特徴とする。 Further, the ultrasonic bonding inspection apparatus according to the present invention includes a waveform detection unit that detects an ultrasonic waveform applied to a bonding tool during bonding, a waveform memory that stores the ultrasonic waveform detected by this detection unit, and a waveform memory that stores the ultrasonic waveform detected by this detection unit. a feature extraction unit that extracts predetermined features from the ultrasound waveform stored in the memory; a standard waveform feature memory that stores the predetermined features extracted from the standard ultrasound waveform when good bonding is performed; The present invention is characterized by comprising a determining unit that determines the quality of bonding by comparing the features extracted by the extracting unit with the features stored in a standard waveform feature memory.

〔発明の実施例〕[Embodiments of the invention]

本発明の一実施例による超音波ボンデイング検
査装置を第１図、第２図に示す。超音波発振器１
１からの超音波は振動子１０に印加され、この振
動子１０を超音波で振動させる。この振動はホー
ン９を介してボンデイングツール５に加えられ
る。ボンデイングツール５はボンデイングワイヤ
７を挟持しており、そのボンデイングワイヤ７の
先端にはボール４が形成されている。ボンデイン
グ時にはボンデインクツール５に超音波を印加
し、半導体ペレツトのボンデイングパツドにボー
ル４を圧着する。超音波ボンデイング検査装置１
２は超音波発振器１１からの超音波波形を入力し
て超音波ポンデイングの良否を検査する。この超
音波波形は表示装置１３に表示される。 An ultrasonic bonding inspection apparatus according to an embodiment of the present invention is shown in FIGS. 1 and 2. Ultrasonic oscillator 1
The ultrasonic waves from 1 are applied to the vibrator 10, causing the vibrator 10 to vibrate with the ultrasonic waves. This vibration is applied to the bonding tool 5 via the horn 9. The bonding tool 5 holds a bonding wire 7, and a ball 4 is formed at the tip of the bonding wire 7. During bonding, ultrasonic waves are applied to the bonding ink tool 5 to press the ball 4 onto the bonding pad of the semiconductor pellet. Ultrasonic bonding inspection device 1
2 inputs the ultrasonic waveform from the ultrasonic oscillator 11 and inspects the quality of ultrasonic pounding. This ultrasonic waveform is displayed on the display device 13.

この超音波ボンデイング検査装置１２の詳細な
構成を第２図に示す。超音波発振器１１からの超
音波は波形検出部２１により検出され量子化され
てデジタル信号に変換される。超音波波形を示す
このデジタル信号は波形メモリ２２に記憶され
る。特徴抽出部２３はこの波形メモリ２２の超音
波波形から後述する種々の特徴を抽出する。一
方、ボンデイング良好時の超音波波形から抽出し
た特徴を予め標準波形特徴メモリ２５に格納して
おく。判定２４はこの標準波形の特徴と特徴抽出
部２３により抽出された特徴を比較し、ボンデイ
ングの良否を判定し、判定結果を出力する。 The detailed configuration of this ultrasonic bonding inspection apparatus 12 is shown in FIG. The ultrasonic wave from the ultrasonic oscillator 11 is detected by the waveform detection section 21, quantized, and converted into a digital signal. This digital signal representing the ultrasound waveform is stored in waveform memory 22. The feature extractor 23 extracts various features, which will be described later, from the ultrasonic waveform in the waveform memory 22. On the other hand, features extracted from the ultrasonic waveform when bonding is good are stored in the standard waveform feature memory 25 in advance. The determination 24 compares the features of this standard waveform with the features extracted by the feature extraction section 23, determines whether the bonding is good or bad, and outputs the determination result.

特徴抽出部２３において抽出される特徴は次の
通りである。 The features extracted by the feature extractor 23 are as follows.

発振開始時間ｔ０（第３図ａ）。 Oscillation start time t0 (Figure 3a).

ボンデイングツール５に超音波を印加してか
ら実際に発振が開始されるまでの時間ｔ０であ
る。 This is the time t0 from when ultrasonic waves are applied to the bonding tool 5 until oscillation actually starts.

超音波波形のピーク値Vpとピーク値に到達
するまでの時間tp（第３図ｂ）。 The peak value Vp of the ultrasonic waveform and the time tp until reaching the peak value (Fig. 3b).

超音波波形のピーク値Vpと、発振開始から
ピーク値Vpに到達するまでの時間tpである。 These are the peak value Vp of the ultrasonic waveform and the time tp from the start of oscillation until reaching the peak value Vp.

超音波波形の立上り角度θ（第３図ｃ）。 The rising angle θ of the ultrasonic waveform (Fig. 3c).

発振開始時の超音波波形の立上り角度θであ
る。 This is the rising angle θ of the ultrasonic waveform at the start of oscillation.

全面積Ｓ、部分面積ΔS、全面積Ｓと部分面
積ΔSとの比Ｋ（第３図ｄ） 全面積Ｓとは、超音波の全波形に対する積分
値、すなわち面積Ｓ（第３図ｄの右下り斜線部
分）である。また部分面積ΔSとは超音波波形
が定常状態になるまでの積分値（第３図ｄの左
下り斜線部分）である。比Ｋは部分面積ΔS／
全面積Ｓである。 The total area S, the partial area ΔS, and the ratio K between the total area S and the partial area ΔS (Fig. 3 d). (downward diagonal line). Further, the partial area ΔS is the integral value until the ultrasonic waveform reaches a steady state (the lower left diagonally shaded area in FIG. 3d). The ratio K is the partial area ΔS/
The total area is S.

理想超音波波形との類似度（第３図ｅ）。 Similarity to ideal ultrasound waveform (Fig. 3e).

検出された超音波波形（実数）と理想超音波
波形（破線）との差の絶対値の積分値（斜線
部）である。 This is the integral value (shaded area) of the absolute value of the difference between the detected ultrasonic waveform (real number) and the ideal ultrasonic waveform (broken line).

判定部２４ではこれら特徴を組合せて総合的に
ボンデイングの良否を判定する。なお、ボンデイ
ング不良には多くの種類があるが、例えば、ボ
ンデイングツールが非接触の場合、ボンデイン
グワイヤの先端に形成されたボールが小さい場
合、ボンデイング位置ずれの場合、ボンデイ
ング荷重不足の場合がある。特徴抽出、および判
定動作は、次のボンデイングによる超音波波形が
入力するまでの短期間で終了するようにしておく
必要がある。 The determination unit 24 combines these features and comprehensively determines the quality of bonding. Note that there are many types of bonding defects, such as when the bonding tool is non-contact, when the ball formed at the tip of the bonding wire is small, when the bonding position is misaligned, and when the bonding load is insufficient. The feature extraction and determination operations must be completed within a short period of time until the next bonding ultrasonic waveform is input.

このように本実施例では、ボンデイング時の超
音波波形によりボンデイングの良否が判定でき
る。この判定は次のボンデイング時までにおこな
うことができるので、全てのボンデイング動作に
対して検査することができ、しかも直ちに良不良
が判定できるので、ボンデイング不良時に短期間
で対処することができる。またボンデイング動作
を停止させることなく検査ができるので従来のよ
うに稼動率が下がることがない。さらにボンデイ
ング装置や超音波発振器の一時的な故障を直ちに
検出することができ、迅速な対応が可能であり、
信頼性の向上と歩留りの向上が期待できる。さら
に従来はボンデイング条件を熟練者のかんに頼つ
て定めていたが、本実施例によればボンデイング
不良を数値的に把握することができ、最適のボン
デイング条件の認定が可能である。 In this manner, in this embodiment, it is possible to determine whether the bonding is successful or not based on the ultrasonic waveform during bonding. Since this determination can be made before the next bonding, all bonding operations can be inspected, and since it is possible to immediately determine whether the bonding is good or bad, it is possible to deal with defective bonding in a short period of time. In addition, since inspection can be performed without stopping the bonding operation, the operating rate does not decrease as in the conventional case. Furthermore, temporary failures in bonding equipment and ultrasonic oscillators can be detected immediately, allowing prompt response.
Improvements in reliability and yield can be expected. Further, conventionally, bonding conditions were determined by relying on experts, but according to this embodiment, bonding defects can be numerically grasped, and optimal bonding conditions can be recognized.

本発明は上記実施例に限らず種々の変形が可能
である。 The present invention is not limited to the above embodiments, and various modifications are possible.

なお、実際に測定したボンデイング時の超音波
波形を第４図に示す。理想的ボンデイング時の超
音波形は斜線で示した領域(A)に含まれる。波形(B)
〜(E)はボンデイング不良時の波形である。超音波
波形(B)はボンデイングツールが非接触で無負荷の
場合である。ピーク値Vpが高くなつている。超
音波形(C)はボンデイング時の荷電が低い場合であ
る。ピーク値Vpが波形(B)ほどではないが高くな
つている。超音波形(D)は、半導体ペレツトへのボ
ンデイング時に、ボンデイング時の位置がずれた
場合又はボンデイング荷電が大きな場合である。
ピーク値Vpが低くなつている。超音波波形(E)は
ボンデイングワイヤが切断して先端にボールがな
い状態でボンデイングした場合である。ピーク値
Vpが低く大きく変動している。 Incidentally, the ultrasonic waveform actually measured during bonding is shown in FIG. The ultrasonic waveform during ideal bonding is included in the shaded area (A). Waveform (B)
-(E) are waveforms when bonding is defective. The ultrasonic waveform (B) is when the bonding tool is non-contact and has no load. The peak value Vp is increasing. The ultrasonic type (C) is a case where the charge during bonding is low. Although the peak value Vp is not as high as in waveform (B), it is higher. The ultrasonic type (D) occurs when the bonding position is shifted during bonding to the semiconductor pellet or when the bonding charge is large.
The peak value Vp is decreasing. The ultrasonic waveform (E) is when the bonding wire is cut and bonding is performed with no ball at the tip. peak value
Vp is low and fluctuates widely.

〔発明の効果〕〔Effect of the invention〕

以上の通り本発明によれば超音波ボンデイング
装置の稼動率を下げることなく、確実にボンデイ
ングの良不良を判定することができる。 As described above, according to the present invention, it is possible to reliably determine whether bonding is good or bad without reducing the operating rate of the ultrasonic bonding apparatus.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図、第２図は本発明の一実施例による超音
波ボンデイング検査装置のブロツク図、第３図は
同検査装置のおける特徴の具体例を説明するため
の図、第４図は実際の超音波波形を示すグラフ、
第５図は基本的なボンデイングシーケンスを示す
図である。 １……リードフレーム、２……半導体ペレツ
ト、３……ボンデイングパツド、４……ボール、
５……ボンデイングツール、６……クランプ、７
……ボンデイングワイヤ、８……電気トーチ、９
……ホーン、１０……振動子、１１……超音波発
振器、１２……超音波ボンデイング検査装置、１
３……表示装置。 1 and 2 are block diagrams of an ultrasonic bonding inspection device according to an embodiment of the present invention, FIG. 3 is a diagram for explaining a specific example of the characteristics of the same inspection device, and FIG. 4 is a diagram of an actual ultrasonic bonding inspection device. Graph showing ultrasound waveform,
FIG. 5 is a diagram showing a basic bonding sequence. 1... Lead frame, 2... Semiconductor pellet, 3... Bonding pad, 4... Ball,
5...Bonding tool, 6...Clamp, 7
...Bonding wire, 8 ...Electric torch, 9
... Horn, 10 ... Vibrator, 11 ... Ultrasonic oscillator, 12 ... Ultrasonic bonding inspection device, 1
3...Display device.

Claims (1)

【特許請求の範囲】 １ 超音波をボンデイングツールに印加すること
によりボンデイングワイヤを半導体ペレツトまた
はインナーリードにボンデイングする超音波ボン
デイング検査方法において、 ボンデイング時に前記ボンデイングツールに印
加される超音波を検出し、 この検出された超音波波形を標準超音波波形と
比較することによりボンデイングの良否を判定す
ることを特徴とする超音波ボンデイング検査方
法。 ２ 超音波をボンデイングツールに印加すること
によりボンデイングワイヤを半導体ペレツトまた
はインナーリードにボンデイングする超音波ボン
デイング検査装置において、 ボンデイング時に前記ボンデイングツールに印
加される超音波波形を検出する波形検出部と、 この検出部で検出された超音波波形を記憶する
波形メモリと、 この波形メモリに記憶された超音波波形から所
定の特徴を抽出する特徴抽出部と、 良好なボンデイングにおこなわれたときの標準
超音波波形から抽出された前記所定の特徴を記憶
する標準波形特徴メモリと、 前記特徴抽出部により抽出された特徴を前記標
準波形特徴メモリに記憶された特徴と比較するこ
とにより、ボンデイングの良否を判定する判定部
と を備えることを特徴とする超音波ボンデイング検
査装置。[Claims] 1. In an ultrasonic bonding inspection method for bonding a bonding wire to a semiconductor pellet or an inner lead by applying ultrasonic waves to a bonding tool, detecting the ultrasonic waves applied to the bonding tool during bonding, An ultrasonic bonding inspection method characterized in that the quality of bonding is determined by comparing the detected ultrasonic waveform with a standard ultrasonic waveform. 2. In an ultrasonic bonding inspection device that bonds a bonding wire to a semiconductor pellet or an inner lead by applying ultrasonic waves to a bonding tool, the waveform detection unit detects an ultrasonic waveform applied to the bonding tool during bonding; A waveform memory that stores the ultrasonic waveform detected by the detection unit, a feature extraction unit that extracts predetermined features from the ultrasonic waveform stored in this waveform memory, and a standard ultrasonic wave when bonding is performed with good a standard waveform feature memory that stores the predetermined features extracted from the waveform; and determining whether bonding is good or bad by comparing the features extracted by the feature extraction section with the features stored in the standard waveform feature memory. An ultrasonic bonding inspection device comprising: a determining section.
JP60216879A 1985-09-30 1985-09-30 Method and apparatus for inspecting ultrasonic bonding Granted JPS6276731A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60216879A JPS6276731A (en) 1985-09-30 1985-09-30 Method and apparatus for inspecting ultrasonic bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60216879A JPS6276731A (en) 1985-09-30 1985-09-30 Method and apparatus for inspecting ultrasonic bonding

Publications (2)

Publication Number Publication Date
JPS6276731A JPS6276731A (en) 1987-04-08
JPH0548624B2 true JPH0548624B2 (en) 1993-07-22

Family

ID=16695342

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60216879A Granted JPS6276731A (en) 1985-09-30 1985-09-30 Method and apparatus for inspecting ultrasonic bonding

Country Status (1)

Country Link
JP (1) JPS6276731A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0566915A (en) * 1991-09-09 1993-03-19 Hitachi Ltd Method and device for display of curve feature value
WO2010113250A1 (en) 2009-03-31 2010-10-07 トヨタ自動車株式会社 Joint quality examining device and joint quality examining method
CN111599709B (en) * 2020-05-29 2022-03-29 上海华力微电子有限公司 Method for detecting wafer bonding interface defects and storage medium

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197940A (en) * 1984-10-19 1986-05-16 Hitachi Ltd Inspecting device for electronic parts
JPS61144837A (en) * 1984-12-19 1986-07-02 Seiko Epson Corp Inspecting device for bonding

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6197940A (en) * 1984-10-19 1986-05-16 Hitachi Ltd Inspecting device for electronic parts
JPS61144837A (en) * 1984-12-19 1986-07-02 Seiko Epson Corp Inspecting device for bonding

Also Published As

Publication number Publication date
JPS6276731A (en) 1987-04-08

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