JPS627149B2 - - Google Patents

Info

Publication number
JPS627149B2
JPS627149B2 JP53135745A JP13574578A JPS627149B2 JP S627149 B2 JPS627149 B2 JP S627149B2 JP 53135745 A JP53135745 A JP 53135745A JP 13574578 A JP13574578 A JP 13574578A JP S627149 B2 JPS627149 B2 JP S627149B2
Authority
JP
Japan
Prior art keywords
powder
sintered material
cutting
volume
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53135745A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5562858A (en
Inventor
Kenichi Nishigaki
Kisho Miwa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP13574578A priority Critical patent/JPS5562858A/ja
Publication of JPS5562858A publication Critical patent/JPS5562858A/ja
Publication of JPS627149B2 publication Critical patent/JPS627149B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Ceramic Products (AREA)
JP13574578A 1978-11-06 1978-11-06 Sintering material with tenacity and abrasion resistance Granted JPS5562858A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13574578A JPS5562858A (en) 1978-11-06 1978-11-06 Sintering material with tenacity and abrasion resistance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13574578A JPS5562858A (en) 1978-11-06 1978-11-06 Sintering material with tenacity and abrasion resistance

Publications (2)

Publication Number Publication Date
JPS5562858A JPS5562858A (en) 1980-05-12
JPS627149B2 true JPS627149B2 (en:Method) 1987-02-16

Family

ID=15158875

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13574578A Granted JPS5562858A (en) 1978-11-06 1978-11-06 Sintering material with tenacity and abrasion resistance

Country Status (1)

Country Link
JP (1) JPS5562858A (en:Method)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8861247B2 (en) 2009-04-27 2014-10-14 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8947965B2 (en) 2009-07-27 2015-02-03 Micron Technology Inc. Techniques for providing a direct injection semiconductor memory device
US8964479B2 (en) 2010-03-04 2015-02-24 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US8982633B2 (en) 2009-05-22 2015-03-17 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US9019788B2 (en) 2008-01-24 2015-04-28 Micron Technology, Inc. Techniques for accessing memory cells
US9019759B2 (en) 2010-03-15 2015-04-28 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9064730B2 (en) 2009-03-04 2015-06-23 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US9093311B2 (en) 2009-03-31 2015-07-28 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9142264B2 (en) 2010-05-06 2015-09-22 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US9240496B2 (en) 2009-04-30 2016-01-19 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US9257155B2 (en) 2007-05-30 2016-02-09 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US9263133B2 (en) 2011-05-17 2016-02-16 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9276000B2 (en) 2007-03-29 2016-03-01 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US9553186B2 (en) 2008-09-25 2017-01-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5626771A (en) * 1979-08-14 1981-03-14 Sumitomo Electric Industries Sintered body for cast iron cutting tool and its manufacture
JPS5860678A (ja) * 1981-10-02 1983-04-11 三菱マテリアル株式会社 切削および耐摩耗工具用高靭性窒化硼素基超高圧焼結材料
JPH07100628B2 (ja) * 1987-11-18 1995-11-01 昭和電工株式会社 立方晶窒化ほう素焼結体の製造方法
CN113896537B (zh) * 2021-12-10 2022-02-22 山东金鸿新材料股份有限公司 一种碳化硼与碳化硅复合陶瓷的制备方法

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9276000B2 (en) 2007-03-29 2016-03-01 Micron Technology, Inc. Manufacturing process for zero-capacitor random access memory circuits
US9257155B2 (en) 2007-05-30 2016-02-09 Micron Technology, Inc. Integrated circuit having voltage generation circuitry for memory cell array, and method of operating and/or controlling same
US9019788B2 (en) 2008-01-24 2015-04-28 Micron Technology, Inc. Techniques for accessing memory cells
US9553186B2 (en) 2008-09-25 2017-01-24 Micron Technology, Inc. Recessed gate silicon-on-insulator floating body device with self-aligned lateral isolation
US9064730B2 (en) 2009-03-04 2015-06-23 Micron Technology, Inc. Techniques for forming a contact to a buried diffusion layer in a semiconductor memory device
US9093311B2 (en) 2009-03-31 2015-07-28 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9425190B2 (en) 2009-04-27 2016-08-23 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8861247B2 (en) 2009-04-27 2014-10-14 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US9240496B2 (en) 2009-04-30 2016-01-19 Micron Technology, Inc. Semiconductor device with floating gate and electrically floating body
US8982633B2 (en) 2009-05-22 2015-03-17 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8964461B2 (en) 2009-07-27 2015-02-24 Micron Technology, Inc. Techniques for providing a direct injection semiconductor memory device
US8947965B2 (en) 2009-07-27 2015-02-03 Micron Technology Inc. Techniques for providing a direct injection semiconductor memory device
US8964479B2 (en) 2010-03-04 2015-02-24 Micron Technology, Inc. Techniques for sensing a semiconductor memory device
US9019759B2 (en) 2010-03-15 2015-04-28 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9524971B2 (en) 2010-03-15 2016-12-20 Micron Technology, Inc. Techniques for providing a semiconductor memory device
US9142264B2 (en) 2010-05-06 2015-09-22 Micron Technology, Inc. Techniques for refreshing a semiconductor memory device
US9263133B2 (en) 2011-05-17 2016-02-16 Micron Technology, Inc. Techniques for providing a semiconductor memory device

Also Published As

Publication number Publication date
JPS5562858A (en) 1980-05-12

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