JPS626644B2 - - Google Patents

Info

Publication number
JPS626644B2
JPS626644B2 JP5612079A JP5612079A JPS626644B2 JP S626644 B2 JPS626644 B2 JP S626644B2 JP 5612079 A JP5612079 A JP 5612079A JP 5612079 A JP5612079 A JP 5612079A JP S626644 B2 JPS626644 B2 JP S626644B2
Authority
JP
Japan
Prior art keywords
layer
silicon
silicon carbide
substrate
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP5612079A
Other languages
English (en)
Japanese (ja)
Other versions
JPS55148420A (en
Inventor
Toshiki Inooku
Takeshi Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP5612079A priority Critical patent/JPS55148420A/ja
Priority to DE3002671A priority patent/DE3002671C2/de
Publication of JPS55148420A publication Critical patent/JPS55148420A/ja
Priority to US06/369,911 priority patent/US4582561A/en
Publication of JPS626644B2 publication Critical patent/JPS626644B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/2905—
    • H10P14/24—
    • H10P14/3408—
    • H10P14/3411—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
JP5612079A 1979-01-25 1979-05-07 Manufacturing of carbonized silicon crystal layer Granted JPS55148420A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP5612079A JPS55148420A (en) 1979-05-07 1979-05-07 Manufacturing of carbonized silicon crystal layer
DE3002671A DE3002671C2 (de) 1979-01-25 1980-01-25 Verfahren zur Herstellung eines Siliciumcarbidsubstrats
US06/369,911 US4582561A (en) 1979-01-25 1982-04-19 Method for making a silicon carbide substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5612079A JPS55148420A (en) 1979-05-07 1979-05-07 Manufacturing of carbonized silicon crystal layer

Publications (2)

Publication Number Publication Date
JPS55148420A JPS55148420A (en) 1980-11-19
JPS626644B2 true JPS626644B2 (show.php) 1987-02-12

Family

ID=13018202

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5612079A Granted JPS55148420A (en) 1979-01-25 1979-05-07 Manufacturing of carbonized silicon crystal layer

Country Status (1)

Country Link
JP (1) JPS55148420A (show.php)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0175747U (show.php) * 1987-11-09 1989-05-23

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2716625B2 (ja) * 1992-05-22 1998-02-18 川崎重工業株式会社 トランスミッションの潤滑方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0175747U (show.php) * 1987-11-09 1989-05-23

Also Published As

Publication number Publication date
JPS55148420A (en) 1980-11-19

Similar Documents

Publication Publication Date Title
US4623425A (en) Method of fabricating single-crystal substrates of silicon carbide
CA2097472C (en) Method for the manufacture of large single crystals
JPH11508531A (ja) Ｃｖｄによって目的物をエピタキシアル成長させる装置と方法
JP2002220299A (ja) 単結晶ＳｉＣ及びその製造方法、ＳｉＣ半導体装置並びにＳｉＣ複合材料
EP0016521B1 (en) Process for producing a silicon epitaxial layer
JP4733485B2 (ja) 炭化珪素単結晶成長用種結晶の製造方法、炭化珪素単結晶成長用種結晶、炭化珪素単結晶の製造方法、および炭化珪素単結晶
US3941647A (en) Method of producing epitaxially semiconductor layers
JP4733882B2 (ja) 炭化珪素単結晶及びその製造方法並びに炭化珪素単結晶育成用炭化珪素結晶原料
JPS5838399B2 (ja) 炭化珪素結晶層の製造方法
JPS6120514B2 (show.php)
JPS626644B2 (show.php)
JP3322740B2 (ja) 半導体基板およびその製造方法
JPS6152120B2 (show.php)
JPS6120516B2 (show.php)
JPS6152119B2 (show.php)
JPS623119B2 (show.php)
JPS6121197B2 (show.php)
JPS6045159B2 (ja) 炭化珪素結晶層の製造方法
JPS5838400B2 (ja) 炭化珪素結晶層の製造方法
JPS638296A (ja) ３Ｃ−ＳｉＣ結晶の形成方法
JP2002016004A (ja) シリコンエピタキシャルウェーハの製造方法
JPS6120519B2 (show.php)
JPH0443878B2 (show.php)
JPS6120518B2 (show.php)
JPS6121198B2 (show.php)