JPS626301B2 - - Google Patents
Info
- Publication number
- JPS626301B2 JPS626301B2 JP54083580A JP8358079A JPS626301B2 JP S626301 B2 JPS626301 B2 JP S626301B2 JP 54083580 A JP54083580 A JP 54083580A JP 8358079 A JP8358079 A JP 8358079A JP S626301 B2 JPS626301 B2 JP S626301B2
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- platen
- shaped
- chevron
- lock chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 28
- 239000010703 silicon Substances 0.000 claims description 28
- 239000000758 substrate Substances 0.000 claims description 28
- 238000007796 conventional method Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000001141 propulsive effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Feeding Of Articles By Means Other Than Belts Or Rollers (AREA)
- Discharge By Other Means (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8358079A JPS567428A (en) | 1979-07-02 | 1979-07-02 | Holding mechanism for silicon substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8358079A JPS567428A (en) | 1979-07-02 | 1979-07-02 | Holding mechanism for silicon substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS567428A JPS567428A (en) | 1981-01-26 |
| JPS626301B2 true JPS626301B2 (enExample) | 1987-02-10 |
Family
ID=13806426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8358079A Granted JPS567428A (en) | 1979-07-02 | 1979-07-02 | Holding mechanism for silicon substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS567428A (enExample) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60133628U (ja) * | 1984-02-14 | 1985-09-06 | 関西日本電気株式会社 | イオン注入装置 |
-
1979
- 1979-07-02 JP JP8358079A patent/JPS567428A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS567428A (en) | 1981-01-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW344897B (en) | A process for forming gate oxides possessing different thicknesses on a semiconductor substrate | |
| JPH0352220B2 (enExample) | ||
| IT1206086B (it) | Sistema per il rivestimento di substrati sottili (wafer) a semiconduttori. | |
| CA2101873A1 (en) | Device for Fixing and Maintaining Shapeable Glass Plates in Position During Their Machining | |
| JPS626301B2 (enExample) | ||
| US4588379A (en) | Configuration for temperature treatment of substrates, in particular semi-conductor crystal wafers | |
| JPS6352109B2 (enExample) | ||
| JPS5842444Y2 (ja) | ウエハの支承装置 | |
| JPS6113373B2 (enExample) | ||
| JPS6253948B2 (enExample) | ||
| JPS5785970A (en) | Formation of thin film | |
| JPS5932369B2 (ja) | 板状部材の整列装置 | |
| JPS63278783A (ja) | ロボツトハンド | |
| KR0161629B1 (ko) | 반도체 이온주입 설비의 웨이퍼 고정장치 | |
| JPH027540A (ja) | 半導体製造装置 | |
| JPH01159185A (ja) | マニピュレータ付き搬送車カセットハンド | |
| JPS6067884A (ja) | 板状試料の位置決め機構 | |
| GB2255295A (en) | Lead frame holder | |
| JPH0234822Y2 (enExample) | ||
| JPS629712Y2 (enExample) | ||
| JPH041016Y2 (enExample) | ||
| JPS57149730A (en) | Manufacture of semiconductor device | |
| JPS6476524A (en) | Magnetic recording medium and production thereof | |
| JPS6476730A (en) | Mounting structure of semiconductor element | |
| JPH0199299A (ja) | 基板搬送装置 |