JPS6260467B2 - - Google Patents

Info

Publication number
JPS6260467B2
JPS6260467B2 JP60504289A JP50428985A JPS6260467B2 JP S6260467 B2 JPS6260467 B2 JP S6260467B2 JP 60504289 A JP60504289 A JP 60504289A JP 50428985 A JP50428985 A JP 50428985A JP S6260467 B2 JPS6260467 B2 JP S6260467B2
Authority
JP
Japan
Prior art keywords
reaction
wall
shell
substrate
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP60504289A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61502900A (ja
Inventor
Robaato Wai Sukeipuru
Jion Dabuyu Piitaazu
Jatsukaazu Efu Rindaa
Edowaado Emu Iee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Raytheon Co
Original Assignee
Hughes Aircraft Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hughes Aircraft Co filed Critical Hughes Aircraft Co
Publication of JPS61502900A publication Critical patent/JPS61502900A/ja
Publication of JPS6260467B2 publication Critical patent/JPS6260467B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45578—Elongated nozzles, tubes with holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
    • C23C16/488—Protection of windows for introduction of radiation into the coating chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Vapour Deposition (AREA)
JP60504289A 1984-07-31 1985-07-08 バレル反応器及び光化学蒸着方法 Granted JPS61502900A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/636,446 US4615294A (en) 1984-07-31 1984-07-31 Barrel reactor and method for photochemical vapor deposition
US636446 1990-12-31

Publications (2)

Publication Number Publication Date
JPS61502900A JPS61502900A (ja) 1986-12-11
JPS6260467B2 true JPS6260467B2 (enExample) 1987-12-16

Family

ID=24551939

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60504289A Granted JPS61502900A (ja) 1984-07-31 1985-07-08 バレル反応器及び光化学蒸着方法

Country Status (5)

Country Link
US (1) US4615294A (enExample)
EP (1) EP0191855B1 (enExample)
JP (1) JPS61502900A (enExample)
DE (1) DE3566559D1 (enExample)
WO (1) WO1986000938A1 (enExample)

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KR900009084B1 (ko) * 1986-03-24 1990-12-20 가부시끼가이샤 한도다이 에네르기 겐꾸쇼 저압 수은 램프
US5427824A (en) * 1986-09-09 1995-06-27 Semiconductor Energy Laboratory Co., Ltd. CVD apparatus
KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US5755886A (en) * 1986-12-19 1998-05-26 Applied Materials, Inc. Apparatus for preventing deposition gases from contacting a selected region of a substrate during deposition processing
US5000113A (en) * 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
FR2618799B1 (fr) * 1987-07-27 1989-12-29 Inst Nat Rech Chimique Reacteur de depot en phase vapeur
FR2651782B1 (fr) * 1989-09-14 1993-03-19 Air Liquide Procede pour la realisation d'un depot d'un revetement protecteur inorganique et amorphe sur un substrat polymerique organique.
US5129360A (en) * 1990-01-24 1992-07-14 The United States Of America As Represented By The Secretary Of The Air Force Actively cooled effusion cell for chemical vapor deposition
JP2505318B2 (ja) * 1991-03-25 1996-06-05 日本碍子株式会社 セラミックハニカム押出成形用口金の製造方法
JPH05124841A (ja) * 1991-06-12 1993-05-21 Sumitomo Electric Ind Ltd ハーメチツクコート光フアイバの製造方法
US5332442A (en) * 1991-11-15 1994-07-26 Tokyo Electron Kabushiki Kaisha Surface processing apparatus
JPH05243166A (ja) * 1992-02-26 1993-09-21 Nec Corp 半導体基板の気相成長装置
US5618580A (en) * 1992-12-28 1997-04-08 Kao Corporation Method for producing ceramic fine particles and apparatus used therefor
US5728224A (en) * 1995-09-13 1998-03-17 Tetra Laval Holdings & Finance S.A. Apparatus and method for manufacturing a packaging material using gaseous phase atmospheric photo chemical vapor deposition to apply a barrier layer to a moving web substrate
US5895530A (en) * 1996-02-26 1999-04-20 Applied Materials, Inc. Method and apparatus for directing fluid through a semiconductor processing chamber
US6096998A (en) 1996-09-17 2000-08-01 Micron Technology, Inc. Method and apparatus for performing thermal reflow operations under high gravity conditions
IT1297339B1 (it) * 1997-12-23 1999-09-01 Cselt Centro Studi Lab Telecom Reattore per deposizione chimica in fase vapore
US5960158A (en) * 1997-07-11 1999-09-28 Ag Associates Apparatus and method for filtering light in a thermal processing chamber
US5972078A (en) * 1997-07-31 1999-10-26 Fsi International, Inc. Exhaust rinse manifold for use with a coating apparatus
US5970214A (en) * 1998-05-14 1999-10-19 Ag Associates Heating device for semiconductor wafers
US5930456A (en) * 1998-05-14 1999-07-27 Ag Associates Heating device for semiconductor wafers
IL125690A0 (en) * 1998-08-06 1999-04-11 Reiser Raphael Joshua Furnace for processing semiconductor wafers
US6210484B1 (en) 1998-09-09 2001-04-03 Steag Rtp Systems, Inc. Heating device containing a multi-lamp cone for heating semiconductor wafers
US6771895B2 (en) 1999-01-06 2004-08-03 Mattson Technology, Inc. Heating device for heating semiconductor wafers in thermal processing chambers
US6554905B1 (en) * 2000-04-17 2003-04-29 Asm America, Inc. Rotating semiconductor processing apparatus
DE10064942A1 (de) * 2000-12-23 2002-07-04 Aixtron Ag Verfahren zum Abscheiden insbesondere kristalliner Schichten
US7052546B1 (en) * 2003-08-28 2006-05-30 Cape Simulations, Inc. High-purity crystal growth
US20050098107A1 (en) * 2003-09-24 2005-05-12 Du Bois Dale R. Thermal processing system with cross-flow liner
US20050121145A1 (en) * 2003-09-25 2005-06-09 Du Bois Dale R. Thermal processing system with cross flow injection system with rotatable injectors
US20100209628A1 (en) * 2007-04-20 2010-08-19 Regents Of The University Of Minnesota Growth of coatings of nanoparticles by photoinduced chemical vapor deposition
CN102080214B (zh) * 2009-11-30 2013-06-05 鸿富锦精密工业（深圳）有限公司 镀膜装置
TW201122148A (en) * 2009-12-24 2011-07-01 Hon Hai Prec Ind Co Ltd Chemical vapor deposition device
CN102133561B (zh) * 2010-01-27 2013-11-20 鸿富锦精密工业（深圳）有限公司 镀膜装置
TW201126016A (en) * 2010-01-29 2011-08-01 Hon Hai Prec Ind Co Ltd Coating device
CN102140630B (zh) * 2010-01-30 2013-08-28 鸿富锦精密工业（深圳）有限公司 镀膜装置
TW201132791A (en) * 2010-03-29 2011-10-01 Hon Hai Prec Ind Co Ltd Plasma coating equipment
TWI452168B (zh) * 2010-06-21 2014-09-11 Hon Hai Prec Ind Co Ltd 電漿式鍍膜裝置
CN102296284B (zh) * 2010-06-22 2014-04-30 鸿富锦精密工业（深圳）有限公司 镀膜装置
JP2012012628A (ja) * 2010-06-29 2012-01-19 Hitachi High-Technologies Corp 基板処理装置
US9885123B2 (en) 2011-03-16 2018-02-06 Asm America, Inc. Rapid bake of semiconductor substrate with upper linear heating elements perpendicular to horizontal gas flow
US9029737B2 (en) * 2013-01-04 2015-05-12 Tsmc Solar Ltd. Method and system for forming absorber layer on metal coated glass for photovoltaic devices
US20140357092A1 (en) * 2013-06-04 2014-12-04 Lam Research Corporation Chamber wall of a plasma processing apparatus including a flowing protective liquid layer

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CA784198A (en) * 1968-04-30 Starr Leon Photochemical reaction process
US2700365A (en) * 1951-10-08 1955-01-25 Ohio Commw Eng Co Apparatus for plating surfaces with carbonyls and other volatile metal bearing compounds
GB793951A (en) * 1955-03-15 1958-04-23 Edwards & Co London Ltd W Improvements in or relating to the cleaning of observation windows in vacuum apparatus
US3398023A (en) * 1964-01-21 1968-08-20 Detrex Chem Ind Sight glass cleaning
US3391270A (en) * 1965-07-27 1968-07-02 Monsanto Co Electric resistance heaters
US3460510A (en) * 1966-05-12 1969-08-12 Dow Corning Large volume semiconductor coating reactor
US3384049A (en) * 1966-10-27 1968-05-21 Emil R. Capita Vapor deposition apparatus including centrifugal force substrate-holding means
US3806360A (en) * 1966-12-15 1974-04-23 Western Electric Co Methods for heating and/or coating articles
DE1963207C3 (de) * 1969-12-17 1973-10-25 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Vorrichtung zum epitaktischen Ab scheiden von Halbleitermaterial auf einem Substrat
US3603284A (en) * 1970-01-02 1971-09-07 Ibm Vapor deposition apparatus
US3645230A (en) * 1970-03-05 1972-02-29 Hugle Ind Inc Chemical deposition apparatus
US3865072A (en) * 1973-10-18 1975-02-11 Hls Ind Apparatus for chemically depositing epitaxial layers on semiconductor substrates
US4022928A (en) * 1975-05-22 1977-05-10 Piwcyzk Bernhard P Vacuum deposition methods and masking structure
US4062318A (en) * 1976-11-19 1977-12-13 Rca Corporation Apparatus for chemical vapor deposition
JPS55108479A (en) * 1979-02-08 1980-08-20 American Can Co Ultraviolet ray hardening ink and ink film hardening device
US4265932A (en) * 1979-08-02 1981-05-05 Hughes Aircraft Company Mobile transparent window apparatus and method for photochemical vapor deposition
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
FR2490246A1 (fr) * 1980-09-17 1982-03-19 Cit Alcatel Dispositif de deposition chimique activee sous plasma
IL64258A0 (en) * 1980-12-15 1982-02-28 Hughes Aircraft Co Method and apparatus for photochemical vapor deposition
GB2089840B (en) * 1980-12-20 1983-12-14 Cambridge Instr Ltd Chemical vapour deposition apparatus incorporating radiant heat source for substrate
JPS58153324A (ja) * 1982-03-08 1983-09-12 Mitsubishi Electric Corp 光をエネルギ−源とする化学気相堆積装置
JPS5950092A (ja) * 1982-09-10 1984-03-22 Toshiba Mach Co Ltd 筒型気相成長装置
US4499853A (en) * 1983-12-09 1985-02-19 Rca Corporation Distributor tube for CVD reactor

Also Published As

Publication number Publication date
EP0191855B1 (en) 1988-11-30
EP0191855A1 (en) 1986-08-27
JPS61502900A (ja) 1986-12-11
DE3566559D1 (en) 1989-01-05
US4615294A (en) 1986-10-07
WO1986000938A1 (en) 1986-02-13

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