JPS6260273A - Solar battery - Google Patents
Solar batteryInfo
- Publication number
- JPS6260273A JPS6260273A JP60200032A JP20003285A JPS6260273A JP S6260273 A JPS6260273 A JP S6260273A JP 60200032 A JP60200032 A JP 60200032A JP 20003285 A JP20003285 A JP 20003285A JP S6260273 A JPS6260273 A JP S6260273A
- Authority
- JP
- Japan
- Prior art keywords
- solar cell
- electrode
- diode
- main body
- solar battery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 210000004027 cell Anatomy 0.000 claims description 84
- 210000005056 cell body Anatomy 0.000 claims description 10
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 22
- 230000001105 regulatory effect Effects 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 10
- 239000003990 capacitor Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 9
- 239000011521 glass Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000000151 deposition Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/142—Energy conversion devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Photovoltaic Devices (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 この発明は太陽電池に関するものである。[Detailed description of the invention] [Technical field of invention] This invention relates to solar cells.
太陽電池は、ガラス基板面に形成された表面側透明電極
とこの表面側透明電極と対向する裏面側電極との間に光
起電層を設けたもので、この太陽電池は、小型電子式計
算機や電子腕時計等の小型電子機器の電源電池として広
く使用されている。A solar cell is one in which a photovoltaic layer is provided between a front transparent electrode formed on a glass substrate and a back electrode opposing the front transparent electrode. It is widely used as a power source battery for small electronic devices such as watches and electronic watches.
ところで、太陽電池は、外部光の照度の変化によって発
′Ｒ電圧が変動するために、安定した電源電圧を得るた
めには、太陽電池の出力電圧を充電用コンデンサンと電
圧調整用ダイオードからなるレギュレータによって調整
してやる必要がある。By the way, the output voltage of a solar cell fluctuates due to changes in the illuminance of external light, so in order to obtain a stable power supply voltage, the output voltage of the solar cell must be controlled by a charging capacitor and a voltage regulating diode. It needs to be adjusted with a regulator.
しかしながら、従来は、太陽電池と電子回路部（例えば
ＬＳＩチップ）とを接続するラインに電圧調整用のダイ
オード（一般には発光ダイオード）と充電用コンデンサ
とを並列に接続してレギュレータを構成しているために
、電子機器の組立てに際して太陽電池と電子回路部とを
接続するラインに電圧調整用ダイオードを外付は接続し
なければならず、そのために、電子機器の組立てに手間
がかかるという問題をもっていた。However, conventionally, a regulator is constructed by connecting a voltage regulating diode (generally a light emitting diode) and a charging capacitor in parallel to a line connecting a solar cell and an electronic circuit section (for example, an LSI chip). Therefore, when assembling electronic equipment, it is necessary to connect an external voltage adjustment diode to the line connecting the solar cell and the electronic circuit section, which poses a problem in that it takes time and effort to assemble the electronic equipment. .
この発明は上記のような実情にかんがみてなされたもの
であって、その目的とするところは、電圧調整用ダイオ
ードを組込んだ太陽電池を提供することにより、電子機
器の組立てに際して太陽電池と電子回路部とを接続する
ラインに電圧調整のためのダイオードを外付は接続する
必要をなくして、電子機器の組立て工程を簡素化するこ
とにある。This invention has been made in view of the above-mentioned circumstances, and its purpose is to provide a solar cell incorporating a voltage adjustment diode so that solar cells and electronic devices can be easily used when assembling electronic equipment. The purpose is to simplify the assembly process of electronic equipment by eliminating the need to externally connect a diode for voltage adjustment to a line connecting the circuit section.
すなわち、この発明は、表面側透明電極と裏面側電極と
の間に光起電層を設けた太陽電池本体の裏面に、薄膜状
の電圧調整用ダイオードを形成したものであり、このよ
うに太陽電池に電圧調整用ダイオードを組込んでおけば
、太陽電池を電源とする電子機器の組立てに際して太陽
電池と電子回路部とを接続するラインに電圧調整のため
のダイオードを外付は接続する必要はないから、電子機
器の組立て工程を簡素化することができる。That is, in this invention, a thin film voltage adjustment diode is formed on the back surface of a solar cell body in which a photovoltaic layer is provided between a front side transparent electrode and a back side electrode. If a voltage adjustment diode is built into the battery, there is no need to connect an external voltage adjustment diode to the line connecting the solar cell and the electronic circuit when assembling electronic equipment that uses solar cells as a power source. Since there is no such thing, the assembly process of electronic equipment can be simplified.
（発明の実施例〕 以下この発明の実施例を図面を参照して説明する。(Example of the invention) Embodiments of the present invention will be described below with reference to the drawings.
第１図〜第３図はこの発明の第１の実施例を示したもの
で、第１図において図中１は表面側透明電極と裏面側電
極との間に光起電層を設けた太陽電池本体であり、この
太陽電池本体１は、例えば３個の太陽電池部１ａ、１ｂ
、１ｃからなっている。この太陽電池本体１の構成を説
明すると、２はガラス基板であり、このガラス基板２の
下面には、３個の表面側透明電極（正極側電極）３，３
が配列形成されている。４は前記ガラス基板２の透明電
極形成面に形成された光起電層であり、この光起電層４
は、ｎ型アモルファスシリコン層とｉ型アモルファスシ
リコン層とｎ型アモルファスシリコン層とを積層した構
成となっている。５゜５は前記光起電層４を挟んで各表
面側透明電極３゜３と対向する裏面側電極（負極側電極
）であり、各太陽電池部１ａ、１ｂ、１Ｇは、前記表面
側透明電極３と光起電層４と裏面側電極５とによって形
成されている。また、前記各裏面側電極５，５のうち一
端側の第１太陽電池部１ａの電極５は、この第１太陽電
池部１ａに隣接する中央の第２太陽電池部１ｂの表面側
透明電極３と接続され、また第２の太陽電池部１の電極
５は、他端側の第３太陽電池部１Ｃの表面側透明電極３
Ｃと接続されており、これによって各太陽電池部１ａ、
ｌｂ。Figures 1 to 3 show a first embodiment of the present invention. This solar cell main body 1 includes, for example, three solar cell parts 1a and 1b.
, 1c. To explain the structure of this solar cell main body 1, 2 is a glass substrate, and the lower surface of this glass substrate 2 has three front side transparent electrodes (positive electrode side electrode) 3, 3.
is formed into an array. 4 is a photovoltaic layer formed on the transparent electrode forming surface of the glass substrate 2;
has a structure in which an n-type amorphous silicon layer, an i-type amorphous silicon layer, and an n-type amorphous silicon layer are laminated. 5゜5 is a back side electrode (negative electrode side electrode) facing each front side transparent electrode 3゜3 with the photovoltaic layer 4 in between, and each solar cell section 1a, 1b, 1G is It is formed by an electrode 3, a photovoltaic layer 4, and a back side electrode 5. Moreover, the electrode 5 of the first solar cell section 1a on one end side among the back side electrodes 5, 5 is the front side transparent electrode 3 of the central second solar cell section 1b adjacent to the first solar cell section 1a. The electrode 5 of the second solar cell section 1 is connected to the front side transparent electrode 3 of the third solar cell section 1C on the other end side.
C, and thereby each solar cell section 1a,
lb.
１Ｃを第２図に示すように直列に接続した太陽電池本体
１が構成されている。また、第１図および第２図におい
て、Ａ、Ｂは太陽電池の端子であり、正極側端子Ａは第
１太陽電池部１ａの表面側透明電極３から導出され、負
極側端子Ｂは第３太陽電池部１Ｃの裏面側電極５から導
出されている。A solar cell main body 1 is constructed by connecting 1C in series as shown in FIG. In addition, in FIGS. 1 and 2, A and B are terminals of the solar cell, the positive terminal A is led out from the front transparent electrode 3 of the first solar cell section 1a, and the negative terminal B is the third terminal. It is led out from the back side electrode 5 of the solar cell section 1C.
一方、第１図において、６は前記太陽電池本体１の裏面
に一体に形成された薄膜状の電圧調整用ダイオードであ
り、この電圧調整用ダイオード６は、太陽電池本体１の
各太陽電池部１ａ、ｌｂ。On the other hand, in FIG. 1, reference numeral 6 denotes a thin film voltage adjustment diode integrally formed on the back surface of the solar cell main body 1, and this voltage adjustment diode 6 is connected to each solar cell section 1a of the solar cell main body 1. , lb.
１Ｃの裏面に形成された実質３個のダイオード部５ａ、
５ｂ、５ｃからなっている。この電圧調整用ダイオード
６は、前記太陽電池本体１の裏面側電極５，５を一方の
電極としたもので、各ダイオード部６ａ、６ｂ、６ｃは
、各太陽電池部１ａ。Substantially three diode portions 5a formed on the back surface of 1C,
It consists of 5b and 5c. This voltage adjustment diode 6 uses the back side electrodes 5, 5 of the solar cell main body 1 as one electrode, and each diode portion 6a, 6b, 6c is a respective solar cell portion 1a.
１ｂ、１ｃの裏面側電極５．５と、この各裏面側電極５
．５に共通して対向する下部電極８と、前記裏面側電極
５，５と下部電極８との間に介在された半導体層７とか
らなっており、前記半導体層７は、ｎ型アモルファスシ
リコン層とｎ型アモルファスシリコン層とを積層した構
造となっている。The back side electrodes 5.5 of 1b and 1c, and each back side electrode 5
．． 5, and a semiconductor layer 7 interposed between the back side electrodes 5, 5 and the lower electrode 8, and the semiconductor layer 7 is an n-type amorphous silicon layer. It has a structure in which a layer of n-type amorphous silicon and a layer of n-type amorphous silicon are stacked.
また、前記下部電極８は、第１太陽電池部１ａの表面側
透明電極３から導出された正極側端子Ａと接続されてお
り、各ダイオード部６ａ、６ｂ、６Ｃの上部電極は、こ
れを各太陽電池部１ａ、ｌｂ。Further, the lower electrode 8 is connected to the positive electrode side terminal A led out from the front side transparent electrode 3 of the first solar cell section 1a, and the upper electrodes of each diode section 6a, 6b, 6C are connected to each other. Solar cell section 1a, lb.
１Ｃの裏面側電極５．５と共用したことによって各太陽
電池部１ａ、Ｉｂ、１ｃの負極側にそれぞれ接続されて
いる。つまり、各ダイオード部６ａ。Since it is shared with the back side electrode 5.5 of 1C, it is connected to the negative electrode side of each solar cell section 1a, Ib, 1c. That is, each diode section 6a.
５ｂ、５ｃは、第２図に示すように太陽電池本体１の各
太陽電池部１ａ、ｌｂ、 １ｃに並列に接続されている
もので、一端側の第１ダイオード部６ａは第１太陽電池
部１ａに対して並列に接続され、中央の第２ダイオード
部６ｂは第１および第２の太陽電池部１ａ、ｌｂに対し
て並列に接続され、他端側の第３ダイオード部６Ｃは第
１．第２．第３の太陽電池部１ａ、１ｂ、１ｃに対して
並列に接続されている。5b and 5c are connected in parallel to each solar cell section 1a, lb, and 1c of the solar cell main body 1, as shown in FIG. 2, and the first diode section 6a on one end side is connected to the first solar cell section 1a, the second diode section 6b at the center is connected in parallel to the first and second solar cell sections 1a and 1b, and the third diode section 6C at the other end is connected in parallel to the first and second solar cell sections 1a, 1b. Second. It is connected in parallel to the third solar cell sections 1a, 1b, and 1c.
第３図は上記太陽電池の構成を模式的に示したもので、
この太陽電池は次のようにして製造される。まず、ガラ
ス基板２面に酸化インジウム等の透明電極材を印刷して
透明電極３を形成し、このガラス基板２の透明電極形成
面上に、ｎ型アモルファスシリコン層と、１型アモルフ
ァスシリコン層と、ｎ型アモルファスシリコン層とを順
次積層して光起電層４を形成する。なお、各アモルファ
スシリコン層は例えばグロー放電法によって形成する。Figure 3 schematically shows the configuration of the solar cell described above.
This solar cell is manufactured as follows. First, a transparent electrode material such as indium oxide is printed on a glass substrate 2 surface to form a transparent electrode 3, and an n-type amorphous silicon layer and a 1-type amorphous silicon layer are formed on the transparent electrode formation surface of the glass substrate 2. , an n-type amorphous silicon layer are sequentially laminated to form the photovoltaic layer 4. Note that each amorphous silicon layer is formed by, for example, a glow discharge method.
このグロー放電法は、シラン（Ｓ ｉ Ｈ４）ガスを高
周波電界でグロー放電を生起させて分解し、これを２０
０〜３００℃に加熱した基板面に堆積させてアモルファ
スシリコン層を形成する方法であり、シランガスにｎ型
不純物例えばジボラン（８２Ｈｓ ）ガスを添加すれば
ｎ型アモルファスシリコン層が形成され、シランガスの
みとすればｉ型アモルファスシリコン層が形成され、シ
ランガスにｎ型不純物例えばホスフィン（ＰＨ３）ガス
を添加すればｎ型アモルファスシリコン層がこの光起Ｎ
層４を形成した後は、その上に銀またはアルミニウム等
の導電性金属を蒸着して太陽電池本体１の裏面側Ｎ極５
を形成する。なお、前記光起電層４は、第２太陽電池部
１ｂおよび第３太陽電池部１Ｃの表面側透明電極３．３
の一端部を露出させるようにこの部分を除いて形成され
ており、従って、第１太陽電池部１ａおよび第２太陽電
池部１ｂの裏面側電極５．５は、第１図に示すように第
２太陽電池部１ｂおよび第３太陽電池部１Ｃの表面側透
明電極３，３上にも蒸着され℃この表面側透明電極３，
３と導通接続される。This glow discharge method decomposes silane (S i H4) gas by generating glow discharge in a high frequency electric field, and then
This is a method of forming an amorphous silicon layer by depositing it on a substrate surface heated to 0 to 300°C.If an n-type impurity, such as diborane (82Hs) gas, is added to silane gas, an n-type amorphous silicon layer is formed. Then, an i-type amorphous silicon layer is formed, and if an n-type impurity such as phosphine (PH3) gas is added to the silane gas, the n-type amorphous silicon layer becomes this photovoltaic N.
After forming the layer 4, a conductive metal such as silver or aluminum is deposited on it to form the N pole 5 on the back side of the solar cell body 1.
form. Note that the photovoltaic layer 4 is formed on the surface-side transparent electrodes 3.3 of the second solar cell section 1b and the third solar cell section 1C.
The back side electrodes 5.5 of the first solar cell section 1a and the second solar cell section 1b are formed so as to expose one end thereof, and therefore, the back side electrodes 5.5 of the first solar cell section 1a and the second solar cell section 1b are formed as shown in FIG. 2 solar cell section 1b and the third solar cell section 1C.
3 and is electrically connected.
このようにして太陽電池本体１を形成した後は、その裏
面側１ｉｔｌｌｉ５．５の上にグロー放電法等によりｎ
型アモルファスシリコン層とｎ型アモルファスシリコン
層を積層してダイオードとしての特性をもつ半導体層７
を形成し、この半導体層７の上に導電性金属の蒸着によ
りダイオードの下部電極８を形成して電圧調整用ダイオ
ード６を形成する。After forming the solar cell main body 1 in this way, a glow discharge method or the like is applied to the back side 1itlli5.
Semiconductor layer 7 having diode characteristics by laminating a type amorphous silicon layer and an n-type amorphous silicon layer
A lower electrode 8 of the diode is formed on the semiconductor layer 7 by vapor deposition of a conductive metal, thereby forming the voltage adjusting diode 6.
なお、第１図に示【ノた太陽電池本体１の端子Ａ。Note that the terminal A of the solar cell main body 1 shown in FIG.
Ｂは、第１太陽電池部１ａの表面側透明電極３の一部と
、第３太陽電池部１Ｃの裏面側電極５の一部をガラス基
板２面の側縁部に延長させて形成するか、あるいは、第
１太陽電池部１ａの表面側透明電極３および第３太陽電
池部１Ｃの裏面側電極５にリード端子を接続して形成す
ればよく、また、前記ダイオード６の下部電極８は、そ
の一部を前記第１太陽電池部１ａの表面側透明電極３の
延長部分に重ねて蒸着形成するか、あるいはリード線を
介して前記正極側端子Ａと接続すればよい。B is formed by extending a part of the front side transparent electrode 3 of the first solar cell part 1a and a part of the back side electrode 5 of the third solar cell part 1C to the side edge of the glass substrate 2 surface. Alternatively, the lower electrode 8 of the diode 6 may be formed by connecting a lead terminal to the front side transparent electrode 3 of the first solar cell section 1a and the back side electrode 5 of the third solar cell section 1C. A portion thereof may be deposited over the extended portion of the front surface side transparent electrode 3 of the first solar cell section 1a, or may be connected to the positive electrode side terminal A via a lead wire.
すなわち、この実施例の太陽電池は、上記のように、太
陽電池本体１の裏面に、この太陽電池本体１の裏面側電
極５を一方の電極（上部電極）とする薄膜状の電圧調整
用ダイオード６を形成したものであり、このように太陽
電池に電圧調整用ダイオード６を組込んでおけば、太陽
電池と電子回路部とを接続するラインに充電用コンデン
サを並列に接続するだけでレギュレータを構成すること
ができるから、太陽電池を電源とする電子機器の組立て
に際して太陽電池と電子回路部とを接続するラインに電
圧調整のためのダイオードを外付は接続する必要はなく
、従って電子機器の組立て工程を簡素化することができ
る。That is, as described above, the solar cell of this embodiment has a thin film voltage adjustment diode on the back surface of the solar cell main body 1, with the back surface side electrode 5 of the solar cell main body 1 as one electrode (upper electrode). If the voltage adjustment diode 6 is built into the solar cell in this way, the regulator can be set up simply by connecting a charging capacitor in parallel to the line connecting the solar cell and the electronic circuit section. Therefore, when assembling electronic equipment that uses solar cells as a power source, there is no need to connect an external diode for voltage adjustment to the line that connects the solar cells and the electronic circuit section. The assembly process can be simplified.
第４図〜第６図はこの発明の第２の実施例を示したもの
で、この実施例の太陽電池は、太陽電池に電圧調整用ダ
イオードと充電用コンデンサとを設けて太陽電池自体に
レギュレータを構成したものである。4 to 6 show a second embodiment of the present invention. The solar cell of this embodiment is equipped with a voltage regulating diode and a charging capacitor, and a regulator is installed in the solar cell itself. It is composed of
この実施例の太陽電池について説明すると、第４図にお
いて、１は太陽電池本体、６は太陽電池本体１の裏面に
形成された電圧調整用ダイオードであり、これらは前記
第１の実施例と同じ構成となっている。９は前記電圧調
整用ダイオード６の裏面に形成された薄膜状の充電用コ
ンデンサである。このコンデンサ９は、前記電圧調整用
ダイオード６の下部電極８を一方の電極（上部電極）と
するもので、このコンデンサ９は、前記電圧調整用ダイ
オード６の下部電極８と、この下部電極８と対向するコ
ンデンサ下部電極１１との間に、絶縁層１０を設けた構
造となっている。なお、前記絶縁層１０は、例えば絶縁
体としての性質があるｉ型アモルファスシリコンからな
っている。また、前記コンデンサ下部電極１１は負極側
端子Ｂと接続されている。つまり、このコンデンサ９は
、その上部電極を兼ねる電圧調整用ダイオード６の下部
電極８が正極側端子Ａと接続され、前記コンデンサ下部
電極１１が負極側端子Ｂと接続されていることによって
、第５図に示すように太陽電池本体１に対して並列に接
続されている。To explain the solar cell of this embodiment, in FIG. 4, 1 is the solar cell main body, 6 is a voltage adjustment diode formed on the back side of the solar cell main body 1, and these are the same as in the first embodiment. The structure is as follows. Reference numeral 9 denotes a thin film charging capacitor formed on the back surface of the voltage regulating diode 6. This capacitor 9 uses the lower electrode 8 of the voltage regulating diode 6 as one electrode (upper electrode). It has a structure in which an insulating layer 10 is provided between the opposing capacitor lower electrode 11. Note that the insulating layer 10 is made of, for example, i-type amorphous silicon that has properties as an insulator. Further, the capacitor lower electrode 11 is connected to the negative terminal B. That is, in this capacitor 9, the lower electrode 8 of the voltage regulating diode 6, which also serves as its upper electrode, is connected to the positive terminal A, and the capacitor lower electrode 11 is connected to the negative terminal B, so that the fifth As shown in the figure, it is connected in parallel to the solar cell main body 1.
第６図はこの実施例の太陽電池の構造を模式的に示した
もので、前記絶縁層１０は、電圧調整用ダイオード６の
下部電極８の上に形成されたｉ型アモルファスシリコン
層からなっており、またコンデンサ下部電極１１は、絶
縁層１０の上に導電性金属を蒸着して形成されている。FIG. 6 schematically shows the structure of the solar cell of this embodiment, in which the insulating layer 10 is made of an i-type amorphous silicon layer formed on the lower electrode 8 of the voltage regulating diode 6. Further, the capacitor lower electrode 11 is formed by depositing a conductive metal on the insulating layer 10.
しかして、この実施例では、太陽電池本体１の裏面に、
この太陽電池本体１の裏面側電極５を上部電極とする薄
膜状の電圧調整用ダイオード６を形成するとともに、こ
のダイオード６の裏面に、このダイオード６の下部電極
８を上部電極とする薄膜状のコンデンサ９を形成してい
るから、太陽電池自体にダイオードとコンデンサからな
るレギュレータを構成して太陽電池の出力電圧を一定に
することができる。従って、この太陽電池を用いれば、
電子機器の組立てに際して太陽電池と電子回路部とを接
続するラインに電圧調整のためのダイオードを外付は接
続する必要がなくなるだけでなく、レギュレータを構成
するためのコンデンサを外付は接続する必要もなくなる
から、小型電子機器の組立て工程をさらに簡素化するこ
とができる。Therefore, in this embodiment, on the back side of the solar cell body 1,
A thin film voltage regulating diode 6 is formed with the back electrode 5 of this solar cell body 1 as an upper electrode, and a thin film voltage regulating diode 6 is formed on the back surface of this diode 6 with the lower electrode 8 of this diode 6 as an upper electrode. Since the capacitor 9 is formed, the output voltage of the solar cell can be made constant by configuring a regulator consisting of a diode and a capacitor in the solar cell itself. Therefore, if this solar cell is used,
When assembling electronic equipment, not only does it become unnecessary to connect an external diode for voltage adjustment to the line connecting the solar cell and the electronic circuit section, but it also eliminates the need to connect an external capacitor to form a regulator. This also eliminates the need for small electronic devices, which further simplifies the assembly process of small electronic devices.
なお、上記第２の実施例では、充電用コンデンサ９の絶
縁層１０をｉ型アモルファスシリコンで形成しているが
、この絶縁層１０は他の絶縁物質で形成してもよい。In the second embodiment, the insulating layer 10 of the charging capacitor 9 is made of i-type amorphous silicon, but the insulating layer 10 may be made of other insulating materials.
また、上記各実施例では、太陽電池本体１の光起電層４
をアモルファスシリコンで形成しているが、この光起電
層４は多結晶シリコン等で形成してもよいし、また光起
電層４はｐ層とｎ層のみで形成してもよい。さらに、上
記各実施例では、電圧調整用ダイオード６の上部電極を
太陽電池本体１の裏面側電極５と兼用しているが、この
電圧調整用ダイオード６の上部電極は太陽電池本体１の
裏面側電極５と別にしてもよく、その場合は電圧調整用
ダイオード６の上部電極と太陽電池本体１の裏面側電極
５との間に絶縁層を介在させてもよいし、また太陽電池
本体１および電圧調整用ダイオード６の構造も上記実施
例に限られるものではない。Further, in each of the above embodiments, the photovoltaic layer 4 of the solar cell body 1
Although the photovoltaic layer 4 is formed of amorphous silicon, it may be formed of polycrystalline silicon or the like, or the photovoltaic layer 4 may be formed of only a p layer and an n layer. Furthermore, in each of the above embodiments, the upper electrode of the voltage regulating diode 6 is also used as the back side electrode 5 of the solar cell body 1; It may be separated from the electrode 5, and in that case, an insulating layer may be interposed between the upper electrode of the voltage regulating diode 6 and the back electrode 5 of the solar cell body 1, or the solar cell body 1 and The structure of the voltage regulating diode 6 is also not limited to the above embodiment.
この発明は、太陽電池本体の裏面に薄膜状の電圧調整用
ダイオードを形成したものであり、このように太陽電池
に電圧調整用ダイオードを組込んでおけば、電子機器の
組立てに際して太陽電池と電子回路部とを接続するライ
ンに電圧調整のためのダイオードを外付は接続する必要
はないから、電子機器の組立て工程を簡素化することが
できる。In this invention, a thin film voltage adjustment diode is formed on the back surface of the solar cell main body. By incorporating the voltage adjustment diode into the solar cell in this way, it is possible to easily connect the solar cell and electronics when assembling electronic equipment. Since there is no need to externally connect a diode for voltage adjustment to the line connecting the circuit section, the assembly process of the electronic device can be simplified.
第１図〜第３図はこの発明の第１の実施例を示したもの
で、第１図および第２図は太陽電池の断面図およ・び等
価回路図、第３図は太陽電池の構造の模式図である。第
４図〜第６図はこの発明の第２の実施例を示したもので
、第４図および第５図は太陽電池の断面図および等価回
路図、第６図は太陽電池の構造の模式図である。
１・・・太陽電池本体、２・・・ガラス基板、３・・・
表面側透明電極、４・・・光起電層、５・・・裏面側電
極、６・・・電圧調整用ダイオード、７・・・半導体層
、８・・・下部電極、９・・・充電用コンデンサ、１０
・・・絶縁層、１１・・・コンデンサ下部電極、Ａ、Ｂ
・・・端子。
出願人代理人 弁理士 鈴江武彦
第１図
第２図
第３図
第４図
第５図
第６図Figures 1 to 3 show a first embodiment of the present invention. Figures 1 and 2 are a cross-sectional view and an equivalent circuit diagram of a solar cell, and Figure 3 is a diagram of a solar cell. It is a schematic diagram of a structure. 4 to 6 show a second embodiment of the present invention. FIGS. 4 and 5 are a cross-sectional view and an equivalent circuit diagram of a solar cell, and FIG. 6 is a schematic diagram of the structure of a solar cell. It is a diagram. 1...Solar cell body, 2...Glass substrate, 3...
Front side transparent electrode, 4... Photovoltaic layer, 5... Back side electrode, 6... Voltage adjustment diode, 7... Semiconductor layer, 8... Lower electrode, 9... Charging capacitor, 10
...Insulating layer, 11...Capacitor lower electrode, A, B
...Terminal. Applicant's Representative Patent Attorney Takehiko Suzue Figure 1 Figure 2 Figure 3 Figure 4 Figure 5 Figure 6
Claims (2)
設けた太陽電池本体の裏面に、薄膜状の電圧調整用ダイ
オードを形成したことを特徴とする太陽電池。(1) A solar cell characterized in that a thin film voltage adjustment diode is formed on the back surface of a solar cell main body in which a photovoltaic layer is provided between a front side transparent electrode and a back side electrode.
電極と、この裏面側電極と対向する下部電極と、前記裏
面側電極と下部電極との間に介在された半導体層とから
なつており、前記下部電極は、前記太陽電池本体の表面
側透明電極から導出された端子と接続されていることを
特徴とする特許請求の範囲第１項記載の太陽電池。(2) The voltage adjustment diode consists of a back electrode of the solar cell body, a lower electrode facing the back electrode, and a semiconductor layer interposed between the back electrode and the lower electrode. 2. The solar cell according to claim 1, wherein the lower electrode is connected to a terminal led out from a front-side transparent electrode of the solar cell main body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60200032A JPS6260273A (en) | 1985-09-10 | 1985-09-10 | Solar battery |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60200032A JPS6260273A (en) | 1985-09-10 | 1985-09-10 | Solar battery |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6260273A true JPS6260273A (en) | 1987-03-16 |
Family
ID=16417685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60200032A Pending JPS6260273A (en) | 1985-09-10 | 1985-09-10 | Solar battery |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6260273A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000315808A (en) * | 1999-04-13 | 2000-11-14 | Angewandte Solarenergie Ase Gmbh | Circuit device for power generation equipped with solar battery |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57201089A (en) * | 1981-06-03 | 1982-12-09 | Sanyo Electric Co Ltd | Photoelectromotive force device |
| JPS5914681A (en) * | 1982-07-15 | 1984-01-25 | Matsushita Electric Works Ltd | Solar battery with charge storage function |
| JPS601872A (en) * | 1983-06-17 | 1985-01-08 | Sanyo Electric Co Ltd | Photosemiconductor device |
-
1985
- 1985-09-10 JP JP60200032A patent/JPS6260273A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57201089A (en) * | 1981-06-03 | 1982-12-09 | Sanyo Electric Co Ltd | Photoelectromotive force device |
| JPS5914681A (en) * | 1982-07-15 | 1984-01-25 | Matsushita Electric Works Ltd | Solar battery with charge storage function |
| JPS601872A (en) * | 1983-06-17 | 1985-01-08 | Sanyo Electric Co Ltd | Photosemiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000315808A (en) * | 1999-04-13 | 2000-11-14 | Angewandte Solarenergie Ase Gmbh | Circuit device for power generation equipped with solar battery |
| EP1045455A3 (en) * | 1999-04-13 | 2003-11-05 | RWE Solar GmbH | Circuit arrangement for power generation with solar cells |
| JP4540175B2 (en) * | 1999-04-13 | 2010-09-08 | ショット・ゾラール・ゲーエムベーハー | Circuit device for power generation with solar cell |
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