JPS6257069B2 - - Google Patents
Info
- Publication number
- JPS6257069B2 JPS6257069B2 JP57141087A JP14108782A JPS6257069B2 JP S6257069 B2 JPS6257069 B2 JP S6257069B2 JP 57141087 A JP57141087 A JP 57141087A JP 14108782 A JP14108782 A JP 14108782A JP S6257069 B2 JPS6257069 B2 JP S6257069B2
- Authority
- JP
- Japan
- Prior art keywords
- radicals
- plasma etching
- orifice
- plasma
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001020 plasma etching Methods 0.000 claims description 26
- 150000002500 ions Chemical class 0.000 claims description 20
- 238000005259 measurement Methods 0.000 claims description 14
- 230000007935 neutral effect Effects 0.000 claims description 12
- 238000005086 pumping Methods 0.000 claims description 3
- 150000003254 radicals Chemical class 0.000 description 20
- 238000000034 method Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 6
- 238000004949 mass spectrometry Methods 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- MXCPYJZDGPQDRA-UHFFFAOYSA-N dialuminum;2-acetyloxybenzoic acid;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3].CC(=O)OC1=CC=CC=C1C(O)=O MXCPYJZDGPQDRA-UHFFFAOYSA-N 0.000 description 3
- 238000004993 emission spectroscopy Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000005281 excited state Effects 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 2
- 238000001819 mass spectrum Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- -1 CF 2 radicals Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011002 quantification Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Electron Tubes For Measurement (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57141087A JPS5931550A (ja) | 1982-08-16 | 1982-08-16 | プラズマエツチング中のラジカルおよび励起分子測定装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57141087A JPS5931550A (ja) | 1982-08-16 | 1982-08-16 | プラズマエツチング中のラジカルおよび励起分子測定装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5931550A JPS5931550A (ja) | 1984-02-20 |
| JPS6257069B2 true JPS6257069B2 (fr) | 1987-11-28 |
Family
ID=15283896
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57141087A Granted JPS5931550A (ja) | 1982-08-16 | 1982-08-16 | プラズマエツチング中のラジカルおよび励起分子測定装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5931550A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59162447A (ja) * | 1983-03-07 | 1984-09-13 | Ulvac Corp | 低温プラズマ中の中性生成物質の測定装置 |
| JPS62151562A (ja) * | 1985-12-26 | 1987-07-06 | Mitsubishi Electric Corp | 薄膜形成装置 |
| KR100519543B1 (ko) * | 1998-07-09 | 2005-12-08 | 삼성전자주식회사 | 반도체소자 제조용 플라즈마 식각장치 |
-
1982
- 1982-08-16 JP JP57141087A patent/JPS5931550A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5931550A (ja) | 1984-02-20 |
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