JPS6255317B2 - - Google Patents
Info
- Publication number
- JPS6255317B2 JPS6255317B2 JP13749178A JP13749178A JPS6255317B2 JP S6255317 B2 JPS6255317 B2 JP S6255317B2 JP 13749178 A JP13749178 A JP 13749178A JP 13749178 A JP13749178 A JP 13749178A JP S6255317 B2 JPS6255317 B2 JP S6255317B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor
- regions
- impurity concentration
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 52
- 239000012535 impurity Substances 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 13
- 238000009792 diffusion process Methods 0.000 description 19
- 230000015556 catabolic process Effects 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000002955 isolation Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000009413 insulation Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Landscapes
- Bipolar Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13749178A JPS5563879A (en) | 1978-11-08 | 1978-11-08 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13749178A JPS5563879A (en) | 1978-11-08 | 1978-11-08 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5563879A JPS5563879A (en) | 1980-05-14 |
JPS6255317B2 true JPS6255317B2 (enrdf_load_stackoverflow) | 1987-11-19 |
Family
ID=15199883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13749178A Granted JPS5563879A (en) | 1978-11-08 | 1978-11-08 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563879A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140372A (ja) * | 2004-11-15 | 2006-06-01 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6477968A (en) * | 1987-09-19 | 1989-03-23 | Fujitsu Ltd | Semiconductor device |
-
1978
- 1978-11-08 JP JP13749178A patent/JPS5563879A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140372A (ja) * | 2004-11-15 | 2006-06-01 | Sanyo Electric Co Ltd | 半導体装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPS5563879A (en) | 1980-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US3411051A (en) | Transistor with an isolated region having a p-n junction extending from the isolation wall to a surface | |
US4228450A (en) | Buried high sheet resistance structure for high density integrated circuits with reach through contacts | |
JPH05347383A (ja) | 集積回路の製法 | |
JPH04266047A (ja) | 埋め込み層形成に相当するsoi型半導体装置の製造方法及び半導体装置 | |
US4988639A (en) | Method of manufacturing semiconductor devices using trench isolation method that forms highly flat buried insulation film | |
US3911471A (en) | Semiconductor device and method of manufacturing same | |
US4430793A (en) | Method of manufacturing a semiconductor device utilizing selective introduction of a dopant thru a deposited semiconductor contact layer | |
US4751561A (en) | Dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer | |
US4685199A (en) | Method for forming dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer | |
US3974560A (en) | Method of making a bipolar transistor | |
US3660732A (en) | Semiconductor structure with dielectric and air isolation and method | |
US3876480A (en) | Method of manufacturing high speed, isolated integrated circuit | |
JPS6255317B2 (enrdf_load_stackoverflow) | ||
GB1129891A (en) | Improvements in or relating to methods of manufacturing solid state circuits | |
US4692784A (en) | Dielectric insulation type semiconductor integrated circuit having low withstand voltage devices and high withstand voltage devices | |
US3696274A (en) | Air isolated integrated circuit and method | |
US4316319A (en) | Method for making a high sheet resistance structure for high density integrated circuits | |
US3815223A (en) | Method for making semiconductor structure with dielectric and air isolation | |
US3961357A (en) | Semiconductor integrated circuit device | |
RU2111578C1 (ru) | Комплементарная биполярная транзисторная структура интегральной схемы | |
JPS61172346A (ja) | 半導体集積回路装置 | |
JPS6115372A (ja) | 半導体装置およびその製造方法 | |
JPS6022358A (ja) | 半導体集積回路装置 | |
JPS60244036A (ja) | 半導体装置とその製造方法 | |
JPS627704B2 (enrdf_load_stackoverflow) |