JPS6254477A - Manufacture of semiconductor pressure sensor - Google Patents

Manufacture of semiconductor pressure sensor

Info

Publication number
JPS6254477A
JPS6254477A JP19437585A JP19437585A JPS6254477A JP S6254477 A JPS6254477 A JP S6254477A JP 19437585 A JP19437585 A JP 19437585A JP 19437585 A JP19437585 A JP 19437585A JP S6254477 A JPS6254477 A JP S6254477A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
portion
silicon
pressure
layer
formed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19437585A
Inventor
Tetsuo Fujii
Original Assignee
Nippon Denso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Abstract

PURPOSE: To enable the use at a high temperature by forming an electrical insulator portion which electrically isolates the surroundings of the pressure-sensitive element region, and etching from the opposite principal surface of the semiconductor substrate to the insulator portion to form a pressure-receiving portion.
CONSTITUTION: N+ ions are driven into one principal surface of a silicon substrate 1, and N+ ions are driven also into the other principal surface in the portion except a region 4 in which the pressure-receiving portion is to be formed; this is heat-treated in a N2 atmosphere, forming silicon nitride layers 2, 3. A P-type monocrystalline silicon layer 5 is grown on the upper surface of the second stop layer 2, and N+ ions are driven, forming a nitride silicon layer 6. A silicon oxide film 7 is formed, the surroundings of each element portion are surrounded with the silicon oxide film 7 and the silicon nitride layer 6, an insulating film 9 is formed on the substrate surface, and a contact hole portion 9A is opened to form a wiring layer 10. Then, the monocrystalline silicon substrate 1 is etched with an alkaline liquid, etching is performed to the second stop layer 2 in the region 4 in which the pressure-receiving portion is to be formed, until etching automatically terminates. With this, the leakage current is prevented, enabling the use in a high-temperature atmosphere.
COPYRIGHT: (C)1987,JPO&Japio
JP19437585A 1985-09-03 1985-09-03 Manufacture of semiconductor pressure sensor Pending JPS6254477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19437585A JPS6254477A (en) 1985-09-03 1985-09-03 Manufacture of semiconductor pressure sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19437585A JPS6254477A (en) 1985-09-03 1985-09-03 Manufacture of semiconductor pressure sensor

Publications (1)

Publication Number Publication Date
JPS6254477A true true JPS6254477A (en) 1987-03-10

Family

ID=16323544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19437585A Pending JPS6254477A (en) 1985-09-03 1985-09-03 Manufacture of semiconductor pressure sensor

Country Status (1)

Country Link
JP (1) JPS6254477A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02240971A (en) * 1989-03-14 1990-09-25 Nippondenso Co Ltd Semiconductor pressure sensor
JPH04148569A (en) * 1990-10-11 1992-05-21 Touyoko Kagaku Kk Semiconductor pressure sensor and manufacture of the same
JPH08181332A (en) * 1995-08-09 1996-07-12 Touyoko Kagaku Kk Manufacture of semiconductor pressure sensor
JP2007309914A (en) * 2006-04-20 2007-11-29 Denso Corp Method of manufacturing physical quantity sensor
JP2008270797A (en) * 1992-04-08 2008-11-06 Glenn J Leedy Manufacturing of insulating film layer isolation ic

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02240971A (en) * 1989-03-14 1990-09-25 Nippondenso Co Ltd Semiconductor pressure sensor
JPH04148569A (en) * 1990-10-11 1992-05-21 Touyoko Kagaku Kk Semiconductor pressure sensor and manufacture of the same
JP2008270797A (en) * 1992-04-08 2008-11-06 Glenn J Leedy Manufacturing of insulating film layer isolation ic
JP2009218606A (en) * 1992-04-08 2009-09-24 Taiwan Semiconductor Manufacturing Co Ltd Manufacture of membrane dielectric insulation ic
JP4648979B2 (en) * 1992-04-08 2011-03-09 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd. Insulating film layer separated ic production
JP4730672B2 (en) * 1992-04-08 2011-07-20 台湾積體電路製造股▲ふん▼有限公司Taiwan Semiconductor Manufacturing Company,Ltd. Insulating film layer separated ic production
JPH08181332A (en) * 1995-08-09 1996-07-12 Touyoko Kagaku Kk Manufacture of semiconductor pressure sensor
JP2007309914A (en) * 2006-04-20 2007-11-29 Denso Corp Method of manufacturing physical quantity sensor

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