JPS6251244A - Hybrid-type semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To make it possible to mount a discrete semiconductor element having a large current capacity and another discrete mounting element without trouble on the same heat radiating plate, by mounting the discrete semiconductor element having the large current capacity on the heat radiating plate through a ceramic plate, whose heat resistance is small, and a copper plate under an electrically insulated state. CONSTITUTION:On a heat radiating plate 10 comprising a metal material, a circuit substrate 11 is bonded through solder 12. To a wiring pattern on the circuit substrate 11, a discrete semiconductor element is connected through solder. In a hole part 111 or a cut-out part provided in a part of the circuit substrate 11, a copper plate 14 is inserted and bonded to said heat radiating plate 10 through the solder 12. On the copper plate 14, a ceramic plate 15, whose both surfaces are metallized, is mounted and bonded through the solder. A discrete semiconductor element 13 having a large current capacity is mounted on the ceramic plate 15 and bonded through the solder 12. Thus, the heat resistance of a heat radiating path can be made small with respect to a part of the discrete semiconductor to be mounted. Therefore, the discrete semiconductor element having the large current capacity and the other discrete semiconductor element can be mounted on the same heat radiating plate.

Description

DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a hybrid semiconductor device such as a semiconductor relay and a method for manufacturing the same, and is particularly suitable for electrical insulation and heat dissipation of individual semiconductor elements having a large current capacity. The present invention relates to a structure and a method for assembling the same.

[Technical background of the invention]

FIG. 4 shows an example of a circuit block of a semiconductor relay (solid state relay) that controls ON/OFF of an AC circuit by DC input, and a specific example of the circuit is shown in FIG. Here, 1 and 2 are input terminals, 3 and 4 are output terminals, 5 is a triac (usually unitized), Q, to Q3 are transistors, PH is a photocoupler, R1 to R. is resistance, C
, , C yo are capacitors, and DB is a diode bridge. The configuration and operation of the above circuit are well known and are not directly related to the present invention, so their explanation will be omitted. The above-mentioned semiconductor relay usually has a structure housed in a single case, and a conventional example of the cross-sectional structure of a part of the relay is shown in Fig. 6, and the structure is constructed using the method described below. Ta.

That is, the arrangement 814 is such that a circuit can be formed by soldering the individual semiconductor elements shown in the circuit diagram of FIG.
The turns (including pads for soldering) are provided by the etching method. Then, for the above soldering, solder resist is coated on the part other than the 9th point of use, and conversely, for the above soldering, solder paste is applied on the 9th point of use (Sn-p, b eutectic solder, also called solder cream) screen print. A resistor R, a triac unit 5, and an output terminal 3 are provided on the board 61.

4 and other parts are mounted and solder reflowed at approximately 230°C. Next, the flux (mixed in the solder yeast) on the board 61 is cleaned with triclean, the case is covered, silicone foam (usually RTV) is coated from the hole in the case, and after curing, the hole is A label is attached to make a semiconductor relay product.

In FIG. 6, 5□ is a fin-shaped heat sink of the triac unit 5, 5 is a lead terminal of the triac unit 5, 62 is an insulating layer of the aluminum substrate 61, and 63 is a lead terminal of the triac unit 5.
is a copper foil wiring pattern on the insulating layer 62, and 64 is solder.

[Problems with background technology]

However, in the structure shown in FIG. 6, since the insulating layer 62 of the aluminum substrate 61 is made of synthetic resin, the thermal resistance is large. If the resin layer is made thinner in order to reduce this thermal resistance, the withstand voltage will be lowered due to the effect of the deid. the current,
An aluminum substrate that can guarantee voltage resistance of AC3.5 kV for 1 minute has a layer thickness of 0. It has an epoxy resin insulating layer of 2 WI, and has a large thermal resistance Rth (je) of about 2 to 2.5° C./y. Therefore, as the triac unit 5, one with a large current capacity (for example, 8A
When using the above), it is necessary to make the heat sink 51 thicker, but if the heat sink 5□ is thick, the warp of the board 61 becomes large when it is soldered onto the aluminum board 61. Furthermore, when punching out the outline of the aluminum substrate 61 with a press, the insulating layer 62 made of synthetic resin and the aluminum plate 60 made of metal are simultaneously punched out, so that the aluminum plate 60 is easily punched and the mold is difficult to maintain. Frequently (every 5000-10000 shots)
It is necessary to do so.

In addition, the aluminum substrate 6
If an attempt was made to solve the problem by using a ceramic substrate of the same size instead of 1, the larger the size of the ceramic substrate, the more likely it would be to crack and crack, and the ceramic substrate would be more likely to crack and break. In some cases, cracks occur. To prevent this, two ceramic substrates are used.
~ It is necessary to divide into 3 pieces and connect them with metal plate terminals or wires after reflow soldering, which increases assembly man-hours (especially man-hours for soldering), resulting in an increase in cost. It turns out.

[Purpose of the invention]

The present invention was made in view of the above circumstances, and it is possible to reduce the thermal resistance of the heat dissipation path for a part of the individual semiconductors to be mounted, and it is possible to reduce the thermal resistance of the heat dissipation path for a part of the individual semiconductors to be mounted. The present invention provides a hybrid semiconductor device that can be mounted on a heat sink without any problem.

Furthermore, the present invention makes it possible to mount all the individual semiconductor elements, including the circuit board and those with large current capacity, to be mounted on the heat dissipation board in one solder reflow when assembling the semiconductor device, The present invention provides a method for manufacturing a hybrid semiconductor device that requires fewer assembly steps.

[Summary of the invention]

That is, in the hybrid semiconductor device of the present invention, a circuit board is bonded via solder onto a heat sink made of a metal material, and individual semiconductor elements are connected to wiring patterns on this circuit board via solder. A copper plate is inserted into a hole or notch provided in a part of the circuit board and is bonded onto the heat sink via solder, and a double-sided metallized ceramic plate is placed on this copper plate. The device is characterized in that individual semiconductor elements having a large current capacity are mounted on the ceramic plate and are bonded together via solder.

In this way, individual semiconductor elements with large current capacity are mounted on a heat sink in an electrically insulated state via a ceramic plate and a copper plate with low thermal resistance. Other individual semiconductor elements can be mounted on the same heat sink without any problem.

Further, the method for manufacturing a hybrid semiconductor device of the present invention includes printing a solder paste on a heat sink made of a metal material,
Lay on top of this a circuit board that has a hole or notch in a part, a soldering part on the bottom surface, and nine turns of wiring formed on the top surface, and apply solder paste over the wiring pattern of this circuit board. At the same time, individual semiconductor elements with a large current capacity are mounted on the heat sink corresponding to the hole or notch through a copper plate, a ceramic plate, and an individual semiconductor element with a large current capacity in that order. However, in this state, solder reflow is performed to perform soldering and adhesion.

Therefore, all the individual semiconductor elements including the circuit board and those having a large current capacity to be mounted on the heat dissipation board can be mounted by one solder reflow, and the number of assembly steps can be reduced.

[Embodiments of the invention]

Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings.

Figures 1(,) and (b) show the external appearance of the semiconductor relay seen from the top and side.C-C' in Figure 1(,)
A schematic cross-sectional structure along the line is shown in FIG. 1(C).

That is, 10 is a heat sink (made of copper-based or aluminum-based metal material, for example, a copper plate or an aluminum plate plated with copper on one side). Reference numeral 11 denotes a circuit board in which a wiring pattern 18 is formed on a glass epoxy double-sided copper-clad laminated board. For example, as shown in FIG. A notch 11 is provided. This circuit board 11 is provided with a copper foil part 19 on at least a part of its lower surface, and is placed on the heat sink 10, and the copper foil part 19 is applied to the heat sink 10 by the solder 12.
It is glued (affixed) on 0. As shown in FIG.
．． 3 thick) 14 is inserted, and its lower surface is adhesively fixed onto the heat dissipation plate 10 with solder 12. 15 is a double-sided metallized ceramic plate for insulating the triac unit placed on the copper plate 14, and 13□ is a lead terminal of the triac unit 13, the tip of which is connected to the wiring pattern part ( solder 12 is attached to the top (copper foil), and 131 is the triac unit 1.
This is a fin-shaped heat sink. On the circuit board 11, there are individual semiconductor components constituting a circuit for driving a triac as shown in FIG. Input terminals 1 and 2 and output terminals 3 and 4 are soldered. A frame-shaped case 16 is provided that surrounds the sides of each of the above-mentioned components, input/output terminals, and triac unit, and the space surrounded by this case 16, the circuit board 11, and the heat sink 10 is sealed. The resin 17 is filled. The tips of the input terminals 1, 2 and the output terminals 3, 4 protrude outward from the resin 17.

According to the above structure, the triac unit 13, which generates a large amount of heat compared to other individual semiconductor components, is connected to the heat dissipation plate 1 through the insulating ceramic plate 15 and the heat dissipation copper plate 14.
0), the above ceramic plate 1
5 is the thermal resistance Rth (j-c
) = 0.5 to 0.6°C, which is as low as 0.5°C to 0.6°C, so the heat dissipation effect is significantly superior to that of the conventional structure, where the thermal resistance was 2 to 2.5°C. Therefore, there is no need to use a large-sized ceramic plate or a ceramic plate divided into two or three pieces, and there are no problems such as ceramic cracking or an increase in the number of soldering steps.

Further, since it is no longer necessary to use a press to cut out the outline of the aluminum substrate having the resin insulating layer, the problem of having to frequently clean the mold does not occur.

Next, a method for manufacturing a semiconductor relay having the above structure according to the present invention will be explained in order of steps with reference to FIGS. 1 to 3. 6-10μ copper plating on one side of aluminum plate
The soldering portion of the copper plate 14 corresponding to the triac unit mounting portion and the circuit board 1 are soldered to a plate having a thickness of m.
Coat solder resist except for the solder bonded area in step 1. Next, the outer shape of the above-mentioned plate is cut out by press punching to obtain a desired heat sink 10. On the other hand, circuit board 1
1 shall be prepared separately, and as this circuit board 11, a wiring pattern 18 for attaching each semiconductor element of the triac drive circuit is provided on the upper surface of a glass epoxy double-sided copper-clad laminate, and a heat sink is provided on the lower surface of the circuit board 11. 10 is provided with a land 19 for soldering. In this case, wiring pattern 1
8. The land 19 is made by a known screen printing and etching method, and a solder resist is applied to the top and bottom surfaces of the circuit board 11 outside the parts. On the other hand, input terminals 1, 2,
The output terminals 3 and 4 are prepared separately, and for this purpose, a copper or brass rod is lathe-cut, threaded, knurled, etc., and then Ni-plated. On the other hand, the case 16 shall be prepared separately, and for this purpose the soldering should be made of a resin material that can withstand temperatures of 230±5°C, such as Happs (z-lyphenylene samphide) resin, FR-PET (glass-filled I-lysene resin). Molded with terephthalate, Teijin Co., Ltd. (product name) resin, etc. On the other hand, it is assumed that the triac unit 13, the copper plate 14, and the ceramic plate 15 are prepared separately. In the case of , copper plate 1
4 is subjected to Nl plating after press punching. Further, the ceramic plate 15 is formed to be 1 to 2 m smaller than the desired external dimensions, and after Mo--Mn or W metallization is applied to both surfaces, Ni plating is applied. Then, the triac unit 13, the ceramic plate 15, and the copper plate 14 are stacked and soldered 12.

This soldering method uses a car anchor jig,
It can be obtained by passing the assembly together with 8n-Pb (10-90) high-temperature solder through a furnace at 370±10° C. to heat the lyac element portion. In addition, the triac units shown in Figure 3) JJ
has a small capacity of, for example, 8A or less, and a triac element is mounted on the frame like the standard TO-220 according to American standards. This is the semiconductor device itself obtained by transfer molding after bonding and Enocaping.

Next, a method of assembling each component prepared as described above and other individual semiconductor components on the heat sink 10 and the circuit board 11 will be described.

First, solder cream (Sn-Pb) is applied on the heat sink 10.

63-37), and similarly print solder cream on the soldering area on the circuit board 11. Next, the circuit board 11 is stacked on the heat sink 10, and the triac unit heat dissipation copper plate 14 is inserted into the triac unit insertion hole 11 of the circuit board 11 and placed on the heat sink 10. The individual semiconductor elements of circuit board 1
1, place them in their respective predetermined positions. Also, case 16
A resin molding jig with holes for input/output terminal guides of approximately the same shape is placed on the heat sink 1o, and input terminals 1, 2 and output terminals 3, 4 are inserted into the guide holes of the jig. In this state, solder reflow (transferred on a heater by a conveyor, temperature: 23°C±5°C) is performed. Next, the resin molding jig is removed, the solder flux (mixed in the solder cream) is cleaned with triclean, the case 16 is mounted on the heat sink 10, and in this state, the sealing resin (for example Epoxy■
266 (manufactured by Japan Bellnox Co., Ltd.) 17 to make a semiconductor relay product.

Note that the triac unit 13 and the ceramic plate 1
5 and the copper plate 14 in advance. After printing solder cream on the upper surfaces of the copper plate 14 and the ceramic plate 15, the copper plate 14, the ceramic plate 15, and the triac unit 13 are soldered when assembling the circuit board 11. They may be stacked in order and soldered at the same time during the solder reflow.

According to the above assembly method, the circuit board 11 is placed on the heat sink 10, the individual semiconductor elements are placed on the circuit board 11, and the copper plate 144 and the ceramic plate 15 are placed in the holes 111 previously formed in the circuit board 11. The triac unit 13 is mounted through the mount and soldered using solder paste in a single solder reflow process, which reduces assembly man-hours, □especially the soldering man-hours. Moreover, the copper plate 14
, the ceramic plate '15, and the triac unit 13 can also be soldered at the same time during the solder reflow process.

It should be noted that the present invention is not limited to the semiconductor relay of the above embodiment, but can be applied to the structure and assembly method of general non-brid type semiconductor devices having individual conductor elements that generate a relatively large amount of heat and other individual semiconductor elements. It is. Furthermore, in the above embodiment, the trybook unit was mounted on the heat sink through the copper plate and ceramic plate in the hole of the circuit board. The triac unit may be mounted via a copper plate or a ceramic plate as described above.

〔Effect of the invention〕

As described above, according to the hybrid semiconductor device of the present invention, it is possible to reduce the thermal resistance of the heat dissipation path for some of the individual semiconductors to be mounted. It can be mounted on the same heat sink together with other individual semiconductor devices. Furthermore, according to the method for manufacturing a hybrid semiconductor device of the present invention, all the individual semiconductor elements including the circuit board and those with large current capacity to be mounted on the heat sink when assembling the semiconductor device can be soldered at one time by reflow soldering. It has the advantage of being easy to mount, requiring fewer assembly steps.

[Brief explanation of drawings]

FIGS. 1(a), (b), and (e) are a top view, a side view, and a sectional view of a semiconductor relay according to an embodiment of the device of the present invention, and FIG. 2 is a circuit board in FIG. 1(C). FIG. 3 is a cross-sectional view showing an enlarged view of the main parts in FIG. 1 (,), and FIG. 4 is a circuit block diagram showing the general configuration of a semiconductor relay. , FIG. 5 is a circuit diagram showing a specific example of the circuit shown in FIG. 4, and FIG. 6 is a sectional view showing a cross-sectional structure of a part of a conventional semiconductor relay. 1.2...Input terminal, 4,5...Output terminal, 10.
... Heat sink, 11... Circuit board, 11□... Triac unit insertion hole, 11. ...notch part, 12
... Solder, 1.9 ... Triac unit, 14
...Copper plate, 15...Ceramic plate, 16...Case, 17...Sealing resin, 18...Wiring/Zetan, 19...Copper foil part (land), C...・Capacitor,
R...Resistor, PH...Photocoupler.

Claims (5)

[Claims] (1) A heat dissipation plate made of a metal material, individual semiconductor elements placed on the heat dissipation plate and bonded via solder, and connected via solder to a wiring pattern formed on the upper surface. A circuit board having a hole or notch in the circuit board, a copper plate inserted into the hole or notch of this circuit board, placed on the heat sink, and bonded via solder, and this copper plate. A double-sided metallized ceramic plate placed on the ceramic plate and bonded via solder, and an individual semiconductor element placed on the ceramic plate and bonded with solder and having a larger current capacity than the individual semiconductor element. A hybrid semiconductor device characterized by: (2) The individual semiconductor element with a large current capacity is a triac unit, the circuit board is a glass epoxy base copper clad laminate, and a circuit for driving the triac unit is configured on the circuit board. 2. The hybrid semiconductor device according to claim 1, wherein the hybrid semiconductor device is configured as a semiconductor relay. (3) The hybrid according to claim 1 or 2, wherein the heat sink is made of a copper-based metal material or an aluminum-based metal material whose upper surface is plated with copper. type semiconductor device. (4) Solder paste is printed on a heat dissipation plate made of a metal material, and a circuit board is formed on the heat dissipation plate, which has a hole or notch in a part, a soldering part on the bottom surface, and a wiring pattern on the top surface. The individual semiconductor components are placed on the wiring pattern of this circuit board via solder paste, and the individual semiconductor components with large current capacity are placed on the heat sink corresponding to the hole or notch via a copper plate and a ceramic plate in that order. A method for manufacturing a hybrid semiconductor device, characterized by mounting an element, performing solder reflow in this state, and performing solder bonding. (5) Insert the copper plate into the hole or notch and place it on a heat sink, place a double-sided metallized ceramic plate on top of the copper plate with solder paste, and place the current capacity on the ceramic plate. 5. The method of manufacturing a hybrid semiconductor device according to claim 4, wherein a large individual semiconductor element is mounted and the solder reflow is performed in this state.