JPS6251239B2 - - Google Patents

Info

Publication number
JPS6251239B2
JPS6251239B2 JP58132871A JP13287183A JPS6251239B2 JP S6251239 B2 JPS6251239 B2 JP S6251239B2 JP 58132871 A JP58132871 A JP 58132871A JP 13287183 A JP13287183 A JP 13287183A JP S6251239 B2 JPS6251239 B2 JP S6251239B2
Authority
JP
Japan
Prior art keywords
raw material
crystal
melting point
melt
vapor pressure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58132871A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6027694A (ja
Inventor
Tooru Katsumata
Kazutaka Terajima
Tsuguo Fukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58132871A priority Critical patent/JPS6027694A/ja
Publication of JPS6027694A publication Critical patent/JPS6027694A/ja
Publication of JPS6251239B2 publication Critical patent/JPS6251239B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B27/00—Single-crystal growth under a protective fluid
    • C30B27/02—Single-crystal growth under a protective fluid by pulling from a melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP58132871A 1983-07-22 1983-07-22 液体封止引き上げ法による化合物半導体単結晶の製造方法 Granted JPS6027694A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58132871A JPS6027694A (ja) 1983-07-22 1983-07-22 液体封止引き上げ法による化合物半導体単結晶の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58132871A JPS6027694A (ja) 1983-07-22 1983-07-22 液体封止引き上げ法による化合物半導体単結晶の製造方法

Publications (2)

Publication Number Publication Date
JPS6027694A JPS6027694A (ja) 1985-02-12
JPS6251239B2 true JPS6251239B2 (enrdf_load_stackoverflow) 1987-10-29

Family

ID=15091496

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58132871A Granted JPS6027694A (ja) 1983-07-22 1983-07-22 液体封止引き上げ法による化合物半導体単結晶の製造方法

Country Status (1)

Country Link
JP (1) JPS6027694A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115504850B (zh) 2021-06-07 2025-05-23 河北中化滏恒股份有限公司 1,4－二甲基萘的制造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59223296A (ja) * 1983-05-27 1984-12-15 Nippon Telegr & Teleph Corp <Ntt> 封止型化合物半導体結晶製造用原料

Also Published As

Publication number Publication date
JPS6027694A (ja) 1985-02-12

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