JPS6249991B2 - - Google Patents
Info
- Publication number
- JPS6249991B2 JPS6249991B2 JP54108936A JP10893679A JPS6249991B2 JP S6249991 B2 JPS6249991 B2 JP S6249991B2 JP 54108936 A JP54108936 A JP 54108936A JP 10893679 A JP10893679 A JP 10893679A JP S6249991 B2 JPS6249991 B2 JP S6249991B2
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- potential
- electrode
- diffusion layer
- charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000009792 diffusion process Methods 0.000 claims description 42
- 239000004065 semiconductor Substances 0.000 claims description 32
- 238000012546 transfer Methods 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 11
- 239000012535 impurity Substances 0.000 claims description 7
- 238000001444 catalytic combustion detection Methods 0.000 description 25
- 238000009826 distribution Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000002093 peripheral effect Effects 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10893679A JPS5632764A (en) | 1979-08-27 | 1979-08-27 | Charge coupled device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10893679A JPS5632764A (en) | 1979-08-27 | 1979-08-27 | Charge coupled device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5632764A JPS5632764A (en) | 1981-04-02 |
JPS6249991B2 true JPS6249991B2 (zh) | 1987-10-22 |
Family
ID=14497398
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10893679A Granted JPS5632764A (en) | 1979-08-27 | 1979-08-27 | Charge coupled device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5632764A (zh) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6142383Y2 (zh) * | 1980-06-23 | 1986-12-02 | ||
JPS5713764A (en) * | 1980-06-27 | 1982-01-23 | Fujitsu Ltd | Charge detector |
JPS57172766A (en) * | 1981-04-16 | 1982-10-23 | Matsushita Electric Ind Co Ltd | Charge transfer device |
JPS59112503A (ja) * | 1982-12-18 | 1984-06-29 | 九州日立マクセル株式会社 | 小型電気機器 |
US4580155A (en) * | 1982-12-21 | 1986-04-01 | Northern Telecom Limited | Deep depletion CCD imager |
JPS59194838A (ja) * | 1983-04-18 | 1984-11-05 | 日本ペイント株式会社 | 塗装金属板 |
JPS61131854U (zh) * | 1985-02-06 | 1986-08-18 | ||
JPS6370570A (ja) * | 1986-09-12 | 1988-03-30 | Nec Corp | 電荷転送装置 |
JPH0327539A (ja) * | 1989-06-25 | 1991-02-05 | Sony Corp | 電荷転送装置 |
-
1979
- 1979-08-27 JP JP10893679A patent/JPS5632764A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5632764A (en) | 1981-04-02 |
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