JPS6249968B2 - - Google Patents

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Publication number
JPS6249968B2
JPS6249968B2 JP1846079A JP1846079A JPS6249968B2 JP S6249968 B2 JPS6249968 B2 JP S6249968B2 JP 1846079 A JP1846079 A JP 1846079A JP 1846079 A JP1846079 A JP 1846079A JP S6249968 B2 JPS6249968 B2 JP S6249968B2
Authority
JP
Japan
Prior art keywords
film
chromium
rhodium
cobalt
amount
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1846079A
Other languages
Japanese (ja)
Other versions
JPS55111110A (en
Inventor
Kazuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1846079A priority Critical patent/JPS55111110A/en
Publication of JPS55111110A publication Critical patent/JPS55111110A/en
Publication of JPS6249968B2 publication Critical patent/JPS6249968B2/ja
Granted legal-status Critical Current

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  • Magnetic Record Carriers (AREA)
  • Thin Magnetic Films (AREA)

Description

【発明の詳細な説明】 本発明は、磁気記録材料、より詳しく述べるな
らば、コバルト・クロム垂直磁気記録媒体に関す
るものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to magnetic recording materials, and more particularly to cobalt chromium perpendicular magnetic recording media.

磁気記録媒体は、コンピユータの記憶装置に用
いられる磁気デイスク、磁気テープなどの磁性膜
を形成するものであり、一般的には記録媒体の長
手(面内)方向に磁化させている。しかしながら
このような磁化方式では記録密度の高密度化に限
界があり、はるかに高密度化が可能となる記録媒
体の面に垂直な方向に磁化する方式が提案されて
いる(例えば、岩崎俊一、「垂直磁化を用いた高
密度磁気記録」、「日経エレクトロニクス」No.
192,1978年8月7日号、pp.100―111参照)。そ
して、磁性膜面に対して垂直方向に磁化可能な垂
直磁気記録媒体にはコバルト・クロムが使用さ
れ、スパツタリングによつて基板上にコバルト・
クロム(Co―Cr)膜を形成している。コバルト
は大きい結晶異方性エネルギーを持ち、その六方
晶形の結晶構造によつて垂直磁化膜となる可能性
があり、これを薄膜で実現するためには、次式の
条件が必要である。
A magnetic recording medium forms a magnetic film such as a magnetic disk or magnetic tape used in a storage device of a computer, and is generally magnetized in the longitudinal (in-plane) direction of the recording medium. However, with this magnetization method, there is a limit to increasing the recording density, and a method of magnetizing in the direction perpendicular to the surface of the recording medium has been proposed, which makes it possible to achieve a much higher density (for example, Shunichi Iwasaki, "High-density magnetic recording using perpendicular magnetization", "Nikkei Electronics" No.
192, August 7, 1978, pp. 100-111). Cobalt chromium is used for perpendicular magnetic recording media that can be magnetized in the direction perpendicular to the magnetic film surface, and cobalt is deposited on the substrate by sputtering.
A chromium (Co-Cr) film is formed. Cobalt has large crystal anisotropy energy, and its hexagonal crystal structure has the potential to form a perpendicularly magnetized film. In order to realize this in a thin film, the following conditions are required.

Ku>2πMs2 なお、式中、Kuは磁化膜の結晶異方性定数で
あり、及びMsは磁化膜の飽和磁化である。この
条件を満足させるために、結晶のC軸(磁化容易
軸)を膜面に垂直にそろえた状態で非磁性のクロ
ムを添加して飽和磁化Msを低下させている。一
般にクロム添加量は30wt%以下であり、15〜
25wt%が好ましい。
Ku>2πMs 2 In the formula, Ku is the crystal anisotropy constant of the magnetized film, and Ms is the saturation magnetization of the magnetized film. In order to satisfy this condition, non-magnetic chromium is added with the C axis (axis of easy magnetization) of the crystal aligned perpendicular to the film surface to lower the saturation magnetization Ms. Generally, the amount of chromium added is 30wt% or less, and 15~
25wt% is preferred.

従来のコバルト・クロム膜の飽和磁化Msと添
加クロム量(wt%)との関係を第1図に示す。
また、このコバルト・クロム膜のC軸のそろいぐ
わいを表わすX線によるロツクキングカーブの分
散角Δθ50と添加クロム量(wt%)との関係を第
2図に示す。なお、コバルト・クロム膜を形成す
るスパツタリングの条件は後述の実施例と同じで
あるが、Coターゲツト上のCrペレツトの量を変
えてある。
Figure 1 shows the relationship between the saturation magnetization Ms of a conventional cobalt-chromium film and the amount of added chromium (wt%).
Further, FIG. 2 shows the relationship between the dispersion angle Δθ 50 of the locking curve by X-rays representing the alignment of the C-axis of this cobalt-chromium film and the amount of added chromium (wt%). The sputtering conditions for forming the cobalt-chromium film were the same as in the examples described later, but the amount of Cr pellets on the Co target was changed.

第1図及び第2図からわかるように、クロムを
添加することによつて飽和磁化Msを下げかつC
軸の分散角Δθ50を小さくする(C軸を膜面に垂
直にさらにそろえる)ことができる。
As can be seen from Figures 1 and 2, by adding chromium, the saturation magnetization Ms can be lowered and C
The dispersion angle Δθ 50 of the axis can be made smaller (the C axis can be further aligned perpendicular to the film surface).

本発明は、上述したコバルト・クロム磁化膜の
コバルト・クロム垂直磁気記録媒体に第3元素と
して30wt%以下のロジウム(Rh)を加えること
によつて、結晶のC軸の分散角Δθ50をさらに小
さくして膜面に垂直な磁化容易軸を有する磁性膜
ができるようにすることである。
The present invention further increases the dispersion angle Δθ 50 of the C-axis of the crystal by adding 30 wt% or less of rhodium (Rh) as a third element to the above-mentioned cobalt-chromium perpendicular magnetic recording medium of the cobalt-chromium magnetized film. The objective is to reduce the size so that a magnetic film having an axis of easy magnetization perpendicular to the film surface can be produced.

第3元素であるロジウムの量としては30wt%
以下である必要がある。コバルト単体にロジウム
を添加していつた場合第3図に示すごとく、
30wt%までは分散角Δθ50は小さくなりC軸の配
向性が良くなるが、30wt%以上加えるとC軸の
配向が二方向になつてしまい、その結果分散角Δ
θ50は大きくなり、垂直磁化媒体としては好まし
くない。したがつて第3元素としてのロジウムの
量は30wt%以下にする必要がある。
The amount of rhodium, the third element, is 30wt%
Must be below. When rhodium is added to cobalt alone, as shown in Figure 3,
Up to 30wt%, the dispersion angle Δθ 50 becomes small and the orientation of the C-axis improves, but when more than 30wt% is added, the orientation of the C-axis becomes bidirectional, resulting in a decrease in the dispersion angle Δ
θ 50 becomes large, which is not preferable as a perpendicular magnetization medium. Therefore, the amount of rhodium as the third element needs to be 30 wt% or less.

以下、実施例によつて本発明を説明する。 The present invention will be explained below with reference to Examples.

スパツタリング装置内に配置する6インチの
Coターゲツト上にCrペレツト(7×7×0.5mm)
を面積比で18%置き、さらにRhペレツト(7×
7×0.5mm)を面積比で2.5%、5%置いた。な
お、これらペレツトをCoターゲツト上でかたよ
らないように均等に置いた。そして、上述のター
ゲツトを下記条件でスパツタリングしてポリイミ
ドフイルム基板上にCo80-xCr20Rhx膜を1μm厚
で形成した。できた膜の組成はX線マイクロアナ
ライザーにより測定した。
A 6-in.
Cr pellet on Co target (7x7x0.5mm)
was placed in an area ratio of 18%, and Rh pellets (7×
7 x 0.5 mm) were placed at an area ratio of 2.5% and 5%. Note that these pellets were placed evenly on the Co target so as not to shift. Then, the above target was sputtered under the following conditions to form a 1 μm thick Co 80-x Cr 20 Rhx film on the polyimide film substrate. The composition of the resulting film was measured using an X-ray microanalyzer.

基板温度(スパツタリング開始時) 25℃ スパツタパワ 200W アルゴンガス圧力 2×10-2torr なお、この基板はスパツタリング前に真空中で
加熱(250℃)して基板中のガスを出しておい
た。
Substrate temperature (at the start of sputtering) 25°C Sputterpower 200W Argon gas pressure 2×10 -2 torr Note that this substrate was heated in vacuum (250°C) to release the gas in the substrate before sputtering.

得られたCo80-xCr20Rhx膜のC軸の分散角Δθ
50とRh量(xwt%)との関係を第4図に示す。こ
の第4図から、ロジウム量を増していくと分散角
Δθ50が小さくなり、クロムのみ添加の磁性膜よ
りもC軸が膜面に垂直になることがわかる。すな
わち、ロジウム添加によつて垂直磁化膜の作成が
容易になる。
Dispersion angle Δθ of the C axis of the obtained Co 80-x Cr 20 Rhx film
The relationship between 50 and Rh content (xwt%) is shown in Figure 4. It can be seen from FIG. 4 that as the amount of rhodium increases, the dispersion angle Δθ 50 becomes smaller, and the C-axis becomes more perpendicular to the film surface than in the magnetic film with only chromium added. That is, the addition of rhodium facilitates the creation of a perpendicularly magnetized film.

また、得られたCo80-xCr20Rhx膜の飽和磁化Ms
とRh量(xwt%)との関係を第5図に示す。ロジ
ウムも非磁性であり、その量が増すほど第5図の
ように飽和磁化Msが小さくなる。
In addition, the saturation magnetization Ms of the obtained Co 80-x Cr 20 Rhx film
The relationship between the amount of Rh and the amount of Rh (xwt%) is shown in Figure 5. Rhodium is also non-magnetic, and as the amount of rhodium increases, the saturation magnetization Ms decreases as shown in FIG.

得られた同じ膜の保磁力Hc(Oe)とRh量(wt
%)との関係を第6図に示す。なお、第6図中の
A線が膜面に垂直方向の保磁力Hc(⊥)を表わ
し、また、B線が長手(平行)方向の保磁力Hc
()を表わす。第6図からわかるように、垂直
方向の保磁力は500e以上であり、ロジウムを添加
した本発明の磁気記録媒体は高密度記録用の垂直
磁気記録媒体に適している。
The coercive force Hc (Oe) and Rh content (wt
%) is shown in Figure 6. Note that line A in Figure 6 represents the coercive force Hc (⊥) in the direction perpendicular to the film surface, and line B represents the coercive force Hc in the longitudinal (parallel) direction.
Represents (). As can be seen from FIG. 6, the perpendicular coercive force is 500e or more, and the rhodium-doped magnetic recording medium of the present invention is suitable as a perpendicular magnetic recording medium for high-density recording.

さらに、得られたCoCrRh膜でCo70Cr20Rh10
のM―Hカーブ(ヒステリシス曲線)を第7図に
示す。第7図中のC線が膜面に垂直方向に測定し
た結果であり、また、D線が膜面に長手(平行)
方向に測定した結果である。
Furthermore, FIG. 7 shows the MH curve (hysteresis curve) of the obtained CoCrRh film, Co 70 Cr 20 Rh 10 film. Line C in Figure 7 is the result of measurement perpendicular to the film surface, and line D is longitudinal (parallel) to the film surface.
These are the results measured in the direction.

これらの結果から、CoCrRh膜は従来のCoCr
膜よりも磁化容易軸であるC軸が膜面に垂直にな
りやすく、かつ、ロジウム添加量によつて飽和磁
化Msおよび保磁力Hcの制御が可能であることが
わかる。したがつて、本発明に係るロジウム添加
のコバルト・クロム磁気記録媒体は高密度記録用
垂直磁気記録媒体として好ましい。
From these results, CoCrRh film is superior to conventional CoCr.
It can be seen that the C axis, which is an axis of easier magnetization than the film, is more likely to be perpendicular to the film surface, and that the saturation magnetization Ms and coercive force Hc can be controlled by changing the amount of rhodium added. Therefore, the rhodium-added cobalt-chromium magnetic recording medium according to the present invention is preferable as a perpendicular magnetic recording medium for high-density recording.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、コバルト・クロム垂直磁気記録膜の
飽和磁化とクロム量との関係を示す図表であり、
第2図は、コバルト・クロム垂直磁気記録膜の分
散角とクロム量との関係を示す図表であり、第3
図はコバルトにロジウムを添加した膜の分散角と
Rh量の関係を示す図表であり、第4図は、本発
明に係るロジウム添加のコバルト・クロム垂直磁
気記録膜の分散角とロジウム量との関係を示す図
表であり、第5図は、本発明に係るロジウム添加
のコバルト・クロム垂直磁気記録膜の飽和磁化と
ロジウム量との関係を示す図表であり、第6図
は、本発明に係るロジウム添加のコバルト・クロ
ム垂直磁気記録膜の保磁力とロジウム量との関係
を示す図表であり、および、第7図は、本発明に
係るCo70Cr20Rh10膜のM―Hカーブ(ヒステリシ
ス曲線)を示す図表である。 A,C…膜面に垂直方向の場合、B,D…膜面
に長手(平行)方向の場合。
FIG. 1 is a chart showing the relationship between the saturation magnetization and the amount of chromium in a cobalt-chromium perpendicular magnetic recording film.
Figure 2 is a chart showing the relationship between the dispersion angle and the amount of chromium in a cobalt-chromium perpendicular magnetic recording film.
The figure shows the dispersion angle of a film made by adding rhodium to cobalt.
FIG. 4 is a chart showing the relationship between the rhodium content and the dispersion angle of the rhodium-doped cobalt-chromium perpendicular magnetic recording film according to the present invention; FIG. 6 is a chart showing the relationship between the saturation magnetization and the amount of rhodium in the rhodium-doped cobalt-chromium perpendicular magnetic recording film according to the invention; FIG. FIG. 7 is a chart showing the relationship between the amount of rhodium and the amount of rhodium, and FIG. 7 is a chart showing the MH curve (hysteresis curve) of the Co 70 Cr 20 Rh 10 film according to the present invention. A, C...for the direction perpendicular to the film surface; B, D...for the longitudinal (parallel) direction to the film surface.

Claims (1)

【特許請求の範囲】[Claims] 1 30wt%以下のロジウムを含有しているコバ
ルト・クロム垂直磁気記録媒体。
1. A cobalt-chromium perpendicular magnetic recording medium containing 30 wt% or less of rhodium.
JP1846079A 1979-02-21 1979-02-21 Vertical type magnetic recording medium Granted JPS55111110A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1846079A JPS55111110A (en) 1979-02-21 1979-02-21 Vertical type magnetic recording medium

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1846079A JPS55111110A (en) 1979-02-21 1979-02-21 Vertical type magnetic recording medium

Publications (2)

Publication Number Publication Date
JPS55111110A JPS55111110A (en) 1980-08-27
JPS6249968B2 true JPS6249968B2 (en) 1987-10-22

Family

ID=11972237

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1846079A Granted JPS55111110A (en) 1979-02-21 1979-02-21 Vertical type magnetic recording medium

Country Status (1)

Country Link
JP (1) JPS55111110A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5862823A (en) * 1981-10-08 1983-04-14 Nec Corp Vertical magnetic storage body
JPH0656650B2 (en) * 1984-05-24 1994-07-27 キヤノン株式会社 Magnetic recording medium
JPS6111919A (en) * 1984-06-27 1986-01-20 Canon Inc magnetic recording medium

Also Published As

Publication number Publication date
JPS55111110A (en) 1980-08-27

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