JPS6249633B2 - - Google Patents
Info
- Publication number
- JPS6249633B2 JPS6249633B2 JP16256878A JP16256878A JPS6249633B2 JP S6249633 B2 JPS6249633 B2 JP S6249633B2 JP 16256878 A JP16256878 A JP 16256878A JP 16256878 A JP16256878 A JP 16256878A JP S6249633 B2 JPS6249633 B2 JP S6249633B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- thin film
- transistor
- switching element
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000010409 thin film Substances 0.000 claims description 37
- 239000003990 capacitor Substances 0.000 claims description 17
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 8
- 238000012423 maintenance Methods 0.000 description 6
- 230000007423 decrease Effects 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001052 transient effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
- Control Of El Displays (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16256878A JPS5589890A (en) | 1978-12-28 | 1978-12-28 | Fulllface erasing circuit system for thinnfilm electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16256878A JPS5589890A (en) | 1978-12-28 | 1978-12-28 | Fulllface erasing circuit system for thinnfilm electroluminescence element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5589890A JPS5589890A (en) | 1980-07-07 |
| JPS6249633B2 true JPS6249633B2 (enrdf_load_stackoverflow) | 1987-10-20 |
Family
ID=15757053
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16256878A Granted JPS5589890A (en) | 1978-12-28 | 1978-12-28 | Fulllface erasing circuit system for thinnfilm electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5589890A (enrdf_load_stackoverflow) |
-
1978
- 1978-12-28 JP JP16256878A patent/JPS5589890A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5589890A (en) | 1980-07-07 |