JPS6245681B2 - - Google Patents
Info
- Publication number
- JPS6245681B2 JPS6245681B2 JP54131308A JP13130879A JPS6245681B2 JP S6245681 B2 JPS6245681 B2 JP S6245681B2 JP 54131308 A JP54131308 A JP 54131308A JP 13130879 A JP13130879 A JP 13130879A JP S6245681 B2 JPS6245681 B2 JP S6245681B2
- Authority
- JP
- Japan
- Prior art keywords
- oxide
- mol
- nonlinear resistor
- manufacturing
- firing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010304 firing Methods 0.000 claims description 9
- 239000000203 mixture Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 7
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- -1 and Mgo 8 mol% Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Description
【発明の詳細な説明】
本発明は非直線抵抗体に係り、特に電気系統に
おける過電圧保護装置に使用される非直線抵抗体
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a nonlinear resistor, and more particularly to a method for manufacturing a nonlinear resistor used in an overvoltage protection device in an electrical system.
電気系統において、正常な電圧に重畳される過
電圧を除去し、電気系統や電気機器を保護するた
め、過電圧保護装置が用いられる。 In electrical systems, overvoltage protection devices are used to remove overvoltages superimposed on normal voltages and protect electrical systems and electrical equipment.
この過電圧保護装置には、正常な電圧ではほぼ
絶縁特性を示し、過電圧が印加されたときには比
較的低抵抗値になる非直線抵抗体が用いられる。 This overvoltage protection device uses a non-linear resistor that exhibits almost insulating properties at normal voltage and has a relatively low resistance value when overvoltage is applied.
非直線抵抗体は酸化亜鉛（ZnO）に、金属酸化
物を混合しプレスして成形し、焼成して造られ
る。 Nonlinear resistors are made by mixing zinc oxide (ZnO) with metal oxides, pressing, shaping, and firing.
例えばZnO76モル％、酸化マグネシウム
（Mgo）16モル％、酸化ビスマス（Bi2O3）、酸化
アンチモン（Sb2O3）、酸化コバルト（CoO）、酸
化マンガン（MnO）、酸化クロム（Cr2O3）、を
夫々0.05ないし3.5モル％合計８モル％秤量して
混合する。 For example, ZnO 76 mol%, magnesium oxide (Mgo) 16 mol%, bismuth oxide (Bi 2 O 3 ), antimony oxide (Sb 2 O 3 ), cobalt oxide (CoO), manganese oxide (MnO), chromium oxide (Cr 2 O) 3 ) and 0.05 to 3.5 mol% each, totaling 8 mol%, are weighed and mixed.
混合物をプレスして成形し、1200℃ないし1350
℃の温度で２時間焼成し、直径60mm、厚さ５mmの
円板状抵抗体とする。しかるのち金属溶射で電極
をつけて完成する。 Press and mold the mixture at 1200℃ to 1350℃
It is fired for 2 hours at a temperature of °C to form a disc-shaped resistor with a diameter of 60 mm and a thickness of 5 mm. Afterwards, electrodes are attached using metal spraying to complete the process.
この様な製造方法により製造した非直線抵抗体
の特性、例えば電流１ｍＡを流すのに必要な電圧
（V1ｍＡ）を測定してみると、特性にバラツキが
大きく、V1ｍＡの範囲を制限して良品を選別す
ると、良品の割合が少ないという欠点があり、特
性を安定させる製造方法が要望されていた。 When measuring the characteristics of a nonlinear resistor manufactured using this manufacturing method, for example, the voltage (V1mA) required to flow 1mA of current, there is a large variation in the characteristics. When sorted, there is a drawback that the proportion of non-defective products is small, and a manufacturing method that stabilizes the characteristics has been desired.
本発明は上記要望に鑑みなされたもので、特性
のバラツキの少ない非直線抵抗体の製造方法を提
供するものである。 The present invention was made in view of the above-mentioned needs, and provides a method for manufacturing a nonlinear resistor with less variation in characteristics.
次に本発明の実施例を図面を参照して説明す
る。ZnOを86モル％と、Bi2O32モル％、更に
Mgo8モル％、Sb2O31.5モル％、CoO1.1モル％、
Cr2O30.5モル％、MnO0.5モル％、Fe2O30.4モル
％の割合で秤量する。 Next, embodiments of the present invention will be described with reference to the drawings. 86 mol% ZnO, 2 mol% Bi 2 O 3 , and
Mgo 8 mol%, Sb 2 O 3 1.5 mol%, CoO 1.1 mol%,
Weigh out 0.5 mol% of Cr 2 O 3 , 0.5 mol % of MnO, and 0.4 mol % of Fe 2 O 3 .
次にこれら酸化物を混合する。混合には例えば
ボールミルに酸化物と、例えばアセトンの様な有
機溶剤とを入れ、24時間ボールミルを作動させれ
ばよい。 Next, these oxides are mixed. For mixing, for example, the oxide and an organic solvent such as acetone may be placed in a ball mill, and the ball mill may be operated for 24 hours.
次に混合物を乾燥させ、電気炉に入れて仮焼す
る。仮焼温度は例えば800℃で２時間が適当であ
る。 The mixture is then dried and calcined in an electric furnace. The appropriate calcining temperature is, for example, 800°C for 2 hours.
仮焼すると酸化物は塊状になるので、粉砕して
微粒子にする。粉砕前の酸化物に有機物結合剤例
えばポリビニルアルコールを酸化物に対する重量
比で100分の１混合する。 When calcined, the oxide becomes lumpy, so it is crushed into fine particles. An organic binder such as polyvinyl alcohol is mixed with the oxide before pulverization at a weight ratio of 1/100 to the oxide.
混合された酸化物を例えばアトライタを用いて
微粉砕し、有機物結合剤を含有した酸化物微粒子
を形成する。酸化物微粒子の組成はほぼ均一であ
るとみなすことができる。 The mixed oxide is pulverized using, for example, an attritor to form oxide fine particles containing an organic binder. The composition of the oxide fine particles can be considered to be substantially uniform.
次に酸化物混合物を造粒装置例えばスプレード
ライヤーに入れ、粒径が例えば100ないし300ミク
ロンの球状団粒とする。この粉末状混合物をプレ
スにかけ、例えば直径100mm、厚さ20mmの円板に
成形する。 The oxide mixture is then placed in a granulating device, such as a spray dryer, to form spherical aggregates having a particle size of, for example, 100 to 300 microns. This powdery mixture is pressed and formed into a disc having a diameter of 100 mm and a thickness of 20 mm, for example.
この円板を例えばアルミナの鞘箱に入れて電気
炉内に設置し、例えば1300℃の温度で８時間焼成
する。 This disk is placed in, for example, an alumina sheath box, placed in an electric furnace, and fired at a temperature of, for example, 1300° C. for 8 hours.
焼成に際し、アルミナの鞘箱にはBi2O3の粉末
を円板と共に入れておき、Bi2O3零囲気中にて非
直線抵抗体の焼成をおこなう。 During firing, Bi 2 O 3 powder is placed in an alumina sheath box together with the disc, and the nonlinear resistor is fired in a Bi 2 O 3 zero atmosphere.
焼成後の円板は焼成前より収縮するが、ほぼ均
質な組成と密度を有する非直線抵抗体となる。 The disk after firing shrinks more than before firing, but it becomes a nonlinear resistor with a substantially homogeneous composition and density.
次に円板の平行な２面に例えばアルミニウムを
金属溶射して電極を形成する。 Next, electrodes are formed on two parallel surfaces of the disk by metal spraying, for example, aluminum.
この様にして製造した非直線抵抗体の電気的特
性を図に示す。図は非直線抵抗体に１ｍＡの電流
を流すのに必要な電圧（V1ｍＡ）を測定し、分
散σ２を算出し、焼成時のBi2O3零囲気の分圧を
パラメータとし分散を表示したものである。 The electrical characteristics of the nonlinear resistor manufactured in this manner are shown in the figure. The figure shows the voltage (V1mA) required to cause a current of 1mA to flow through a nonlinear resistor, calculate the dispersion σ 2 , and display the dispersion using the partial pressure of the Bi 2 O 3 ambient air during firing as a parameter. It is something.
図に示すようにBi2O3分圧が0.05mmHgないし50
mmHgの範囲では、分散σ２の値が100V以下と小
さく、V1ｍＡが例えば3.000Vの非直線抵抗体で
は実用上、充分使用できることが確認できた。 As shown in the figure, Bi 2 O 3 partial pressure is 0.05mmHg to 50
In the mmHg range, the value of dispersion σ 2 is as small as 100V or less, and it was confirmed that a nonlinear resistor with V1mA of, for example, 3.000V can be used satisfactorily for practical use.
上記実施例では焼成工程において、アルミナ鞘
箱に非直線抵抗体とBi2O3粉末とを入れて、焼成
したが、Bi2O3の分圧が0.05mmHgないし50mmHgの
零囲が得られるならば他の焼成方法によつても、
本発明の効果が得られることは勿論である。 In the above example, in the firing process, the nonlinear resistor and Bi 2 O 3 powder were placed in an alumina sheath box and fired. Even with other firing methods,
Of course, the effects of the present invention can be obtained.
また、非直線抵抗体の組成、形状、寸法、V1
ｍＡの値ならびに製造方法が異なつても、本発明
の効果が得られることは勿論である。また、焼成
用鞘箱の材質が異なつても、或は鞘箱を用いない
で焼成した非直線抵抗体であつても、本発明の効
果を得ることができるのは勿論である。 Also, the composition, shape, dimensions, V1 of the nonlinear resistor
Of course, the effects of the present invention can be obtained even if the value of mA and the manufacturing method are different. Furthermore, it goes without saying that the effects of the present invention can be obtained even if the material of the firing sheath box is different, or even if the nonlinear resistor is fired without using a sheath box.
図は本発明の製造方法の効果を説明する曲線図
である。
The figure is a curve diagram illustrating the effects of the manufacturing method of the present invention.
Claims (1)
を混合し、焼成して非直線抵抗体を製造する方法
において、前記混合物を0.05ないし50mmHgの酸
化ビスマス雰囲気中で焼成することを特徴とする
非直線抵抗体の製造方法。1. A method for manufacturing a non-linear resistor by mixing zinc oxide and at least one type of metal oxide and firing the mixture, characterized in that the mixture is fired in a bismuth oxide atmosphere of 0.05 to 50 mmHg. Method of manufacturing a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13130879A JPS5655007A (en) | 1979-10-13 | 1979-10-13 | Method of manufacturing nonlinear resistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13130879A JPS5655007A (en) | 1979-10-13 | 1979-10-13 | Method of manufacturing nonlinear resistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5655007A JPS5655007A (en) | 1981-05-15 |
| JPS6245681B2 true JPS6245681B2 (en) | 1987-09-28 |
Family
ID=15054913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13130879A Granted JPS5655007A (en) | 1979-10-13 | 1979-10-13 | Method of manufacturing nonlinear resistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5655007A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5183199A (en) * | 1974-11-13 | 1976-07-21 | Philips Nv | Denatsuodoteikono seizohoho |
-
1979
- 1979-10-13 JP JP13130879A patent/JPS5655007A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5183199A (en) * | 1974-11-13 | 1976-07-21 | Philips Nv | Denatsuodoteikono seizohoho |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5655007A (en) | 1981-05-15 |
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