JPS6245643B2 - - Google Patents
Info
- Publication number
- JPS6245643B2 JPS6245643B2 JP57208175A JP20817582A JPS6245643B2 JP S6245643 B2 JPS6245643 B2 JP S6245643B2 JP 57208175 A JP57208175 A JP 57208175A JP 20817582 A JP20817582 A JP 20817582A JP S6245643 B2 JPS6245643 B2 JP S6245643B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductive
- water
- ethylene
- polymer
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000203 mixture Substances 0.000 claims description 17
- 229920000573 polyethylene Polymers 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 6
- 229920000642 polymer Polymers 0.000 claims description 5
- 229920001971 elastomer Polymers 0.000 claims description 4
- 229920001577 copolymer Polymers 0.000 claims description 3
- 239000000806 elastomer Substances 0.000 claims description 3
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 11
- -1 polyethylene Polymers 0.000 description 7
- 239000012212 insulator Substances 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 5
- 240000005572 Syzygium cordatum Species 0.000 description 4
- 235000006650 Syzygium cordatum Nutrition 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 239000004698 Polyethylene Substances 0.000 description 3
- 230000003712 anti-aging effect Effects 0.000 description 3
- 229920005601 base polymer Polymers 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 229920003020 cross-linked polyethylene Polymers 0.000 description 3
- 239000004703 cross-linked polyethylene Substances 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- YHMYGUUIMTVXNW-UHFFFAOYSA-N 1,3-dihydrobenzimidazole-2-thione Chemical compound C1=CC=C2NC(S)=NC2=C1 YHMYGUUIMTVXNW-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 239000004743 Polypropylene Substances 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- PRBHEGAFLDMLAL-GQCTYLIASA-N (4e)-hexa-1,4-diene Chemical compound C\C=C\CC=C PRBHEGAFLDMLAL-GQCTYLIASA-N 0.000 description 1
- XACQZFVINUCPQX-UHFFFAOYSA-N 1-n-phenyl-2-n-propan-2-ylbenzene-1,2-diamine Chemical compound CC(C)NC1=CC=CC=C1NC1=CC=CC=C1 XACQZFVINUCPQX-UHFFFAOYSA-N 0.000 description 1
- KGRVJHAUYBGFFP-UHFFFAOYSA-N 2,2'-Methylenebis(4-methyl-6-tert-butylphenol) Chemical compound CC(C)(C)C1=CC(C)=CC(CC=2C(=C(C=C(C)C=2)C(C)(C)C)O)=C1O KGRVJHAUYBGFFP-UHFFFAOYSA-N 0.000 description 1
- XMNIXWIUMCBBBL-UHFFFAOYSA-N 2-(2-phenylpropan-2-ylperoxy)propan-2-ylbenzene Chemical compound C=1C=CC=CC=1C(C)(C)OOC(C)(C)C1=CC=CC=C1 XMNIXWIUMCBBBL-UHFFFAOYSA-N 0.000 description 1
- HXIQYSLFEXIOAV-UHFFFAOYSA-N 2-tert-butyl-4-(5-tert-butyl-4-hydroxy-2-methylphenyl)sulfanyl-5-methylphenol Chemical compound CC1=CC(O)=C(C(C)(C)C)C=C1SC1=CC(C(C)(C)C)=C(O)C=C1C HXIQYSLFEXIOAV-UHFFFAOYSA-N 0.000 description 1
- WSSSPWUEQFSQQG-UHFFFAOYSA-N 4-methyl-1-pentene Chemical compound CC(C)CC=C WSSSPWUEQFSQQG-UHFFFAOYSA-N 0.000 description 1
- NLZUEZXRPGMBCV-UHFFFAOYSA-N Butylhydroxytoluene Chemical compound CC1=CC(C(C)(C)C)=C(O)C(C(C)(C)C)=C1 NLZUEZXRPGMBCV-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000002656 Distearyl thiodipropionate Substances 0.000 description 1
- 229920000181 Ethylene propylene rubber Polymers 0.000 description 1
- UTGQNNCQYDRXCH-UHFFFAOYSA-N N,N'-diphenyl-1,4-phenylenediamine Chemical compound C=1C=C(NC=2C=CC=CC=2)C=CC=1NC1=CC=CC=C1 UTGQNNCQYDRXCH-UHFFFAOYSA-N 0.000 description 1
- XQVWYOYUZDUNRW-UHFFFAOYSA-N N-Phenyl-1-naphthylamine Chemical compound C=1C=CC2=CC=CC=C2C=1NC1=CC=CC=C1 XQVWYOYUZDUNRW-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 235000010354 butylated hydroxytoluene Nutrition 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 235000019241 carbon black Nutrition 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- PWWSSIYVTQUJQQ-UHFFFAOYSA-N distearyl thiodipropionate Chemical compound CCCCCCCCCCCCCCCCCCOC(=O)CCSCCC(=O)OCCCCCCCCCCCCCCCCCC PWWSSIYVTQUJQQ-UHFFFAOYSA-N 0.000 description 1
- 235000019305 distearyl thiodipropionate Nutrition 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 229920006244 ethylene-ethyl acrylate Polymers 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 229920001519 homopolymer Polymers 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- CXKWCBBOMKCUKX-UHFFFAOYSA-M methylene blue Chemical compound [Cl-].C1=CC(N(C)C)=CC2=[S+]C3=CC(N(C)C)=CC=C3N=C21 CXKWCBBOMKCUKX-UHFFFAOYSA-M 0.000 description 1
- 229960000907 methylthioninium chloride Drugs 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920001748 polybutylene Polymers 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Description
本発明は、電力ケーブルの導体外周や絶縁体外
周の半導電層の形成に好適な半導電性組成物に関
するものである。
架橋ポリエチレン絶縁電力ケーブルにおける半
導電層と絶縁体界面の平滑性、密着性はケーブル
の信頼性向上の観点から重要である。界面不整が
存在すると局部的に高電界が形成され、コロナ放
電や浸水時に水トリー劣化が生じ易く、ケーブル
の電気的特性が低下する。
この問題に対し、従来より半導電層の製造面と
材料面からの検討がなされており、ケバ立ちの多
い半導電性布テープに代えて押出型半導電層が開
発されるに至つた。押出型半導電層の材料として
は、極性を有するエチレン―酢酸ビニル共重合体
やエチレン―エチルアクリレート共重合体をベー
スポリマとしたもの、非極性のエチレンプロピレ
ンゴム、ポリエチレンをベースポリマとしたも
の、あるいはこれらのブレンドをベースポリマと
したものが用いられている。このような半導電層
を有する架橋ポリエチレン絶縁電力ケーブルは、
破壊電圧が大幅に向上するが、ケーブル内に浸水
が起きるような厳しい条件下では、長期課電を行
うと水トリーが多発し、破壊電圧が低下するとい
う問題を生ずる。
本発明は、上記した問題点を解決するためにな
されたもので、電力ケーブルの耐水トリー性を向
上することができる半導電性組成物の提供を目的
とするものである。
本発明の半導電性組成物は、融点120℃以上の
結晶性エチレン系ポリマとエチレン―ブテン―
1,4―ヘキサジエン共重合エラストマのブレン
ドポリマに対して導電性付与材を加えてなること
を特徴とするものである。
本発明において、結晶性エチレン系ポリマとし
ては、ポリエチレン、ポリプロピレン、ポリブテ
ン―1、ポリヘキセン―1、ポリオクテン―1、
ポリ―4―メチルペンテン―1などのホモポリ
マ、およびこれらとエチレンとの共重合体などが
あげられが、中でも、ポリエチレン、ポリプロピ
レンが好適である。
かかる結晶性エチレン系ポリマにエチレン―ブ
テン―1,4―ヘキサジエン共重合体エラストマ
をブレンドすることにより顕著な耐水トリー性が
発揮されることが見出された。なお、ブレンドポ
リマにおける結晶性エチレン系ポリマの含有比率
が50重量%以上であることが水トリー抑止効果の
点から好ましい。
導電性付与材としては、アセチレンブラツク、
フアーネスブラツク等の導電性カーボンブラツク
が適切である。導電性付与材の添加量は、ブレン
ドポリマ100重量部に対して40重量部以上とする
のが好ましい。
本発明においては、上記の成分に加えて、老化
防止剤、滑剤、分散剤等も必要に応じて配合して
もよい。老化防止剤としては、アミン系のN,
N′―ジフエニル―P―フエニレンジアミン、フ
エニル―α―ナフチルアミン、N―フエニル―
N′―イソプロピル―フエニレンジアミン、ポリ
(2,2―4―トリメチル―1,2―ジヒドロキ
ノリン)など、フエノール系の2,2′メチレンビ
ス(4―メチル―6―tert―ブチルフエノー
ル)、2,6―ジ―tert―ブチル―4―メチルフ
エノール、4,4′―チオビス(6―tert―ブチル
―3―メチルフエノール)など、イミダゾール系
の2―メルカプトベンゾイミダゾール、2―メル
カプトベンゾイミダゾールの亜鉛塩など、イオウ
系のジステアリル―チオ―ジプロピオネート、ジ
ラウリルチオプロピオネート、テトラキス(メチ
ル―ドデシルチオプロピオネート)メタンなどが
あげられ、その他ゴム用の老化防止剤を単独ある
いは組み合わせて使用することができる。
上記した各種成分を含む半導電性組成物は、所
定形状に成形後架橋してもよく、架橋方法として
はパーオキサイドやイオウを用いた架橋、電子線
照射による架橋、シラングラフト水架橋といつた
ものがあげられる。
以下、本発明の実施例を比較例と対比して説明
する。
第1表の各例に示す配合の半導電性組成物を断
面積80mm2の銅撚線導体上に押出被覆して厚さ1mm
の内部半導電層を形成し、この外周に、低密度ポ
リエチレン(密度0.920g/cm3、メルトインデツ
クス1.0)100重量部、ジクミルパーオキサイド
2.5重量部、酸化防止剤0.25重量部を配合してな
る絶縁体組成物を押出被覆して厚さ4mmの絶縁体
層を形成した。続いてこの絶縁体層の外周に上記
内部半導電層と同じ組成の半導電性組成物を押出
被覆して厚さ1mmの外部半導電層を形成し、加熱
架橋を行つて架橋ポリエチレン絶縁電力ケーブル
を製造した。
上記のようにして製造した電力ケーブルの導体
内に注水を行い、浸水させた後50Hz,15kVの交
流電圧を導体と水電極間に印加し、水温を90℃と
して18カ月課電し、課電終了後絶縁体を0.5mm厚
さにスパイラルカツトし、メチレンブルー水溶液
で煮沸染色した後、顕微鏡で絶縁体と内部半導電
層との界面に発生した水トリー数を観察した。そ
の結果を第1表の下欄に示した。
The present invention relates to a semiconductive composition suitable for forming a semiconductive layer around the conductor or insulator of a power cable. The smoothness and adhesion of the interface between the semiconducting layer and the insulator in cross-linked polyethylene insulated power cables are important from the perspective of improving cable reliability. When interface irregularities exist, a high electric field is locally formed, which tends to cause water tree deterioration during corona discharge or water immersion, and deteriorates the electrical characteristics of the cable. To address this problem, studies have been made from the aspects of manufacturing and materials for semiconducting layers, and extruded semiconducting layers have been developed in place of semiconductive cloth tapes, which tend to have a lot of fuzz. Materials for the extruded semiconductive layer include those using polar ethylene-vinyl acetate copolymer or ethylene-ethyl acrylate copolymer as the base polymer, non-polar ethylene propylene rubber, polyethylene as the base polymer, Alternatively, a blend of these as a base polymer is used. A cross-linked polyethylene insulated power cable with such a semiconducting layer is
Although the breakdown voltage is significantly improved, under severe conditions such as water seepage inside the cable, water treeing occurs frequently when electricity is applied for a long period of time, resulting in a decrease in the breakdown voltage. The present invention was made in order to solve the above-mentioned problems, and an object of the present invention is to provide a semiconductive composition that can improve the water resistance of power cables. The semiconductive composition of the present invention comprises a crystalline ethylene polymer with a melting point of 120°C or higher and ethylene-butene-
It is characterized by adding a conductivity imparting material to a blend polymer of 1,4-hexadiene copolymerized elastomer. In the present invention, the crystalline ethylene polymers include polyethylene, polypropylene, polybutene-1, polyhexene-1, polyoctene-1,
Examples include homopolymers such as poly-4-methylpentene-1 and copolymers of these with ethylene, among which polyethylene and polypropylene are preferred. It has been found that remarkable water resistance can be exhibited by blending an ethylene-butene-1,4-hexadiene copolymer elastomer with such a crystalline ethylene-based polymer. Note that it is preferable that the content ratio of the crystalline ethylene polymer in the blend polymer is 50% by weight or more from the viewpoint of water tree suppression effect. As the conductivity imparting material, acetylene black,
Conductive carbon blacks, such as furnace blacks, are suitable. The amount of the conductivity imparting material added is preferably 40 parts by weight or more based on 100 parts by weight of the blend polymer. In the present invention, in addition to the above-mentioned components, anti-aging agents, lubricants, dispersants, etc. may also be added as necessary. As anti-aging agents, amine-based N,
N'-diphenyl-P-phenylenediamine, phenyl-α-naphthylamine, N-phenyl-
N'-isopropyl-phenylenediamine, poly(2,2-4-trimethyl-1,2-dihydroquinoline), phenolic 2,2'methylenebis(4-methyl-6-tert-butylphenol), 2 , 6-di-tert-butyl-4-methylphenol, 4,4'-thiobis(6-tert-butyl-3-methylphenol), etc., imidazole-based 2-mercaptobenzimidazole, zinc of 2-mercaptobenzimidazole Salts such as sulfur-based distearyl-thio-dipropionate, dilaurylthiopropionate, tetrakis (methyl-dodecylthiopropionate) methane, etc., and other anti-aging agents for rubber are used alone or in combination. be able to. The semiconductive composition containing the various components described above may be crosslinked after being molded into a predetermined shape, and crosslinking methods include crosslinking using peroxide or sulfur, crosslinking by electron beam irradiation, and silane graft water crosslinking. Things can be given. Examples of the present invention will be described below in comparison with comparative examples. A semiconductive composition having the formulation shown in each example in Table 1 was extruded and coated onto a copper stranded wire conductor with a cross-sectional area of 80 mm 2 to a thickness of 1 mm.
100 parts by weight of low density polyethylene (density 0.920 g/cm 3 , melt index 1.0), dicumyl peroxide
An insulator composition containing 2.5 parts by weight and 0.25 parts by weight of an antioxidant was extrusion coated to form an insulator layer with a thickness of 4 mm. Next, a semiconductive composition having the same composition as the internal semiconductive layer was extruded around the outer periphery of this insulating layer to form an external semiconductive layer with a thickness of 1 mm, and heat crosslinking was performed to form a crosslinked polyethylene insulated power cable. was manufactured. Water was injected into the conductor of the power cable manufactured as described above, and after the water had soaked, an AC voltage of 50 Hz and 15 kV was applied between the conductor and the water electrode, the water temperature was set to 90°C, and electricity was applied for 18 months. After completion, the insulator was spirally cut to a thickness of 0.5 mm, boiled and stained with a methylene blue aqueous solution, and the number of water trees generated at the interface between the insulator and the internal semiconducting layer was observed using a microscope. The results are shown in the lower column of Table 1.
【表】【table】
【表】
第1表の評価結果から明らかな通り、実施例1
〜3に示す本発明に係る半導電性組成物でもつて
内外半導電層を形成したものは、いずれも比較例
1〜4の半導電性組成物を用いた場合に比較して
水トリー数が大幅に少なくなつており、良好な結
果を示した。
以上説明したように、本発明によれば耐水トリ
ー性を大幅に向上した電力ケーブルを実現できる
ようになる。[Table] As is clear from the evaluation results in Table 1, Example 1
All of the semiconductive compositions according to the present invention shown in 3 to 3 in which inner and outer semiconductive layers were formed had a water tree number as compared to the case where the semiconductive compositions of Comparative Examples 1 to 4 were used. The amount was significantly reduced, indicating good results. As explained above, according to the present invention, it is possible to realize a power cable with significantly improved water resistance.
Claims (1)
エチレン―ブテン―1,4―ヘキサジエン共重合
エラストマのブレンドポリマに対して導電性付与
材を加えてなることを特徴とする半導電性組成
物。1. A semiconductive composition comprising a blend polymer of a crystalline ethylene polymer with a melting point of 120° C. or higher and an ethylene-butene-1,4-hexadiene copolymer elastomer, and a conductivity-imparting material added thereto.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20817582A JPS5998403A (en) | 1982-11-26 | 1982-11-26 | Semiconductive composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20817582A JPS5998403A (en) | 1982-11-26 | 1982-11-26 | Semiconductive composition |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5998403A JPS5998403A (en) | 1984-06-06 |
JPS6245643B2 true JPS6245643B2 (en) | 1987-09-28 |
Family
ID=16551896
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20817582A Granted JPS5998403A (en) | 1982-11-26 | 1982-11-26 | Semiconductive composition |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5998403A (en) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6140349A (en) * | 1984-07-31 | 1986-02-26 | Fujikura Ltd | Mixture for semiconductive layer |
JPS6140348A (en) * | 1984-07-31 | 1986-02-26 | Fujikura Ltd | Mixture for semiconductive layer |
JPS6140347A (en) * | 1984-07-31 | 1986-02-26 | Fujikura Ltd | Mixture for semiconductive layer |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671215A (en) * | 1979-11-15 | 1981-06-13 | Dainichi Nippon Cables Ltd | Polyolefin insulating power cable |
JPS57158907A (en) * | 1981-03-26 | 1982-09-30 | Fujikura Ltd | Power cable |
-
1982
- 1982-11-26 JP JP20817582A patent/JPS5998403A/en active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5671215A (en) * | 1979-11-15 | 1981-06-13 | Dainichi Nippon Cables Ltd | Polyolefin insulating power cable |
JPS57158907A (en) * | 1981-03-26 | 1982-09-30 | Fujikura Ltd | Power cable |
Also Published As
Publication number | Publication date |
---|---|
JPS5998403A (en) | 1984-06-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPH04106B2 (en) | ||
JPS6245643B2 (en) | ||
JP2001325834A (en) | Dc power cable | |
JPH09231839A (en) | Direct current cable | |
JPS63146302A (en) | Rubber resin insulated power cable | |
JP2001256833A (en) | Composition for electrical insulation and electric wire and cable | |
JPH07107806B2 (en) | Power cable | |
JPS6356645B2 (en) | ||
KR100291669B1 (en) | A semiconductive power cable shield | |
JPS63313410A (en) | Semiconducting composition for power cable | |
JP2001312922A (en) | Plastic insulating composition and electrical wire, cable, cable connecting part using the same | |
JPH06267334A (en) | Electrically insulating composition and wire and/or cable | |
JPH03276515A (en) | Water-tree resisting electric wire and cable | |
JPH02165506A (en) | High-tension cable | |
JPS63292505A (en) | Semiconductive resin composition | |
JPH01267904A (en) | Extruded type semiconductive resin compound for electric power cable | |
JPH01267905A (en) | Extruded type semiconductive resin compound for electric power cable | |
JPH08241624A (en) | Semiconductor resin composition for power cable | |
JPS6280908A (en) | Vulcanized ep rubber insulated power cable | |
JPH0515007B2 (en) | ||
JPH06309949A (en) | Anti-watertree electric power cable | |
JPH0750107A (en) | Water-proof tree cable | |
JPH0467510A (en) | Semiconductive resin composition for power cable | |
JPS6356644B2 (en) | ||
JPS61235444A (en) | Semiconductive resin composition |