JPS6244849B2 - - Google Patents

Info

Publication number
JPS6244849B2
JPS6244849B2 JP57084092A JP8409282A JPS6244849B2 JP S6244849 B2 JPS6244849 B2 JP S6244849B2 JP 57084092 A JP57084092 A JP 57084092A JP 8409282 A JP8409282 A JP 8409282A JP S6244849 B2 JPS6244849 B2 JP S6244849B2
Authority
JP
Japan
Prior art keywords
region
laser
implanted
annealing
ions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57084092A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5810822A (ja
Inventor
Heruji Hansen Hawaado
Aaru Shirubaaman Ronarudo
Buretsuto Rasukii Jeroomu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS5810822A publication Critical patent/JPS5810822A/ja
Publication of JPS6244849B2 publication Critical patent/JPS6244849B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W15/00—Highly-doped buried regions of integrated devices
    • H10W15/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/092—Laser beam processing-diodes or transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/093—Laser beam treatment in general

Landscapes

  • Semiconductor Lasers (AREA)
  • Bipolar Transistors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
JP57084092A 1981-07-08 1982-05-20 半導体装置の製造方法 Granted JPS5810822A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/281,267 US4379727A (en) 1981-07-08 1981-07-08 Method of laser annealing of subsurface ion implanted regions
US281267 1981-07-08

Publications (2)

Publication Number Publication Date
JPS5810822A JPS5810822A (ja) 1983-01-21
JPS6244849B2 true JPS6244849B2 (https=) 1987-09-22

Family

ID=23076599

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57084092A Granted JPS5810822A (ja) 1981-07-08 1982-05-20 半導体装置の製造方法

Country Status (5)

Country Link
US (1) US4379727A (https=)
EP (1) EP0069327B1 (https=)
JP (1) JPS5810822A (https=)
CA (1) CA1189768A (https=)
DE (1) DE3277264D1 (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823479A (ja) * 1981-08-05 1983-02-12 Fujitsu Ltd 半導体装置の製造方法
JPS5856409A (ja) * 1981-09-30 1983-04-04 Toshiba Corp 半導体装置の製造方法
US4698486A (en) * 1984-02-28 1987-10-06 Tamarack Scientific Co., Inc. Method of heating semiconductor wafers in order to achieve annealing, silicide formation, reflow of glass passivation layers, etc.
US4571348A (en) * 1984-08-08 1986-02-18 General Motors Corporation Reducing hydrogen content of vacuum deposited films
US4621411A (en) * 1984-09-28 1986-11-11 Texas Instruments Incorporated Laser-enhanced drive in of source and drain diffusions
US4666557A (en) * 1984-12-10 1987-05-19 Ncr Corporation Method for forming channel stops in vertical semiconductor surfaces
US5578520A (en) 1991-05-28 1996-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for annealing a semiconductor
US5766344A (en) 1991-09-21 1998-06-16 Semiconductor Energy Laboratory Co., Ltd. Method for forming a semiconductor
JPH06124913A (ja) 1992-06-26 1994-05-06 Semiconductor Energy Lab Co Ltd レーザー処理方法
JP3211394B2 (ja) * 1992-08-13 2001-09-25 ソニー株式会社 半導体装置の製造方法
JPH06232069A (ja) * 1993-02-04 1994-08-19 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
GB9406900D0 (en) * 1994-04-07 1994-06-01 Philips Electronics Uk Ltd Manufacture of electronic devices comprising thin -film transistors
DE19511251A1 (de) * 1995-03-27 1996-10-02 Siemens Ag Bipolarer Siliziumtransistor
CA2278578A1 (en) * 1997-11-28 1999-06-10 Tsuneo Mitsuyu Method and device for activating semiconductor impurities
US6417515B1 (en) 2000-03-17 2002-07-09 International Business Machines Corporation In-situ ion implant activation and measurement apparatus
US6594446B2 (en) 2000-12-04 2003-07-15 Vortek Industries Ltd. Heat-treating methods and systems
JP2005515425A (ja) * 2001-12-26 2005-05-26 ボルテック インダストリーズ リミテッド 温度測定および熱処理方法およびシステム
KR20120045040A (ko) 2002-12-20 2012-05-08 맷슨 테크날러지 캐나다 인코퍼레이티드 피가공물 지지 방법
WO2005059991A1 (en) * 2003-12-19 2005-06-30 Mattson Technology Canada Inc. Apparatuses and methods for suppressing thermally induced motion of a workpiece
TWI237857B (en) * 2004-10-21 2005-08-11 Nanya Technology Corp Method of fabricating MOS transistor by millisecond anneal
US7989888B2 (en) * 2006-08-31 2011-08-02 Infineon Technologies Autria AG Semiconductor device with a field stop zone and process of producing the same
JP5967859B2 (ja) * 2006-11-15 2016-08-10 マトソン テクノロジー、インコーポレイテッド 熱処理中の被加工物を支持するシステムおよび方法
FR2921752B1 (fr) * 2007-10-01 2009-11-13 Aplinov Procede de chauffage d'une plaque par un flux lumineux.
CN102089873A (zh) 2008-05-16 2011-06-08 加拿大马特森技术有限公司 工件破损防止方法及设备
FR2938116B1 (fr) * 2008-11-04 2011-03-11 Aplinov Procede et dispositif de chauffage d'une couche d'une plaque par amorcage et flux lumineux.
WO2011096326A1 (ja) * 2010-02-04 2011-08-11 富士電機システムズ株式会社 半導体素子の製造方法および半導体素子の製造装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4151008A (en) * 1974-11-15 1979-04-24 Spire Corporation Method involving pulsed light processing of semiconductor devices
US4111720A (en) * 1977-03-31 1978-09-05 International Business Machines Corporation Method for forming a non-epitaxial bipolar integrated circuit
US4230505A (en) * 1979-10-09 1980-10-28 Rca Corporation Method of making an impatt diode utilizing a combination of epitaxial deposition, ion implantation and substrate removal
US4269631A (en) * 1980-01-14 1981-05-26 International Business Machines Corporation Selective epitaxy method using laser annealing for making filamentary transistors
US4318752A (en) * 1980-05-16 1982-03-09 Bell Telephone Laboratories, Incorporated Heterojunction semiconductor laser fabrication utilizing laser radiation

Also Published As

Publication number Publication date
DE3277264D1 (en) 1987-10-15
EP0069327A3 (en) 1984-09-12
JPS5810822A (ja) 1983-01-21
EP0069327B1 (en) 1987-09-09
US4379727A (en) 1983-04-12
EP0069327A2 (en) 1983-01-12
CA1189768A (en) 1985-07-02

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