JPS6244410B2 - - Google Patents

Info

Publication number
JPS6244410B2
JPS6244410B2 JP288683A JP288683A JPS6244410B2 JP S6244410 B2 JPS6244410 B2 JP S6244410B2 JP 288683 A JP288683 A JP 288683A JP 288683 A JP288683 A JP 288683A JP S6244410 B2 JPS6244410 B2 JP S6244410B2
Authority
JP
Japan
Prior art keywords
frequency electrode
processed
workpiece
processing chamber
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP288683A
Other languages
Japanese (ja)
Other versions
JPS59127847A (en
Inventor
Noboru Kuryama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP288683A priority Critical patent/JPS59127847A/en
Publication of JPS59127847A publication Critical patent/JPS59127847A/en
Publication of JPS6244410B2 publication Critical patent/JPS6244410B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Jigs For Machine Tools (AREA)

Description

【発明の詳細な説明】 本発明はスパツタリング装置に係り、特に被処
理物を静電作用力により保持して処理する静電チ
ヤツク装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a sputtering apparatus, and more particularly to an electrostatic chuck apparatus that holds and processes a workpiece by electrostatic force.

例えば半導体ウエフアの表面を清浄化するため
にスパツタリング装置が用いられる。このスパツ
タリング装置は一対の電極を持つた処理室中に被
処理物を置き、両電極間に放電を起して処理室内
にプラズマイオンを生成し、このプラズマイオン
を被処理物に作用させるものである。そして、こ
の処理に際し被処理物を何れかの電極上に保持す
ることになるが、このために何らかのチヤツク装
置を利用する。 For example, sputtering equipment is used to clean the surface of semiconductor wafers. This sputtering equipment places a workpiece in a processing chamber with a pair of electrodes, generates a discharge between the two electrodes, generates plasma ions in the processing chamber, and causes these plasma ions to act on the workpiece. be. During this treatment, the object to be treated is held on one of the electrodes, and for this purpose some kind of chuck device is used.

従来、このチヤツク装置としては機械的に被処
理物を保持するものがある。これは被処理物の端
部を保持部材によつて一方の電極面に押圧するよ
うにしている。 Conventionally, there are chuck devices that mechanically hold the object to be processed. This is so that the end of the object to be processed is pressed against one electrode surface by the holding member.

しかしながら、この機械式チヤツクは複雑な機
構を必要とする上に、被処理物の表面の一部をプ
ラズマイオンから覆い隠すことになり不具合であ
る。 However, this mechanical chuck requires a complicated mechanism and is disadvantageous in that it partially covers the surface of the object to be treated from plasma ions.

本発明は上述の点に鑑みてなされたもので、被
処理物を載置すべき電極の表面に絶縁層を配し、
この絶縁層を挾んで被処理物と電極とに荷電する
ことにより静電的に被処理物をチヤツキングし且
つ荷電量を検出することによりチヤツキングの適
否を判定し得るような静電チヤツク装置を構成し
たものである。 The present invention has been made in view of the above points, and includes disposing an insulating layer on the surface of the electrode on which the object to be treated is placed,
An electrostatic chucking device is constructed that can electrostatically chuck the workpiece by sandwiching this insulating layer and charge the workpiece and the electrode, and determine whether or not the charging is appropriate by detecting the amount of charge. This is what I did.

以下添付図面を参照して本発明の一実施例を説
明する。 An embodiment of the present invention will be described below with reference to the accompanying drawings.

図は本発明に係るスパツタリング装置の全体構
成を示している。このスパツタリング装置は機構
的には処理室１１と給電回路室１２とを有し、処
理室１１はアルゴン等のガスを略々真空に近い状
態で収容してなり被処理物の処理を行い、給電回
路室１２はスパツタリング用高周波およびチヤツ
キング用直流の給電回路を収納してなるものであ
る。処理室１１が下方にあるのは被処理物の処理
面を下向きにし塵埃等の付着防止を図つたためで
ある。 The figure shows the overall configuration of a sputtering device according to the present invention. Mechanically, this sputtering apparatus has a processing chamber 11 and a power supply circuit chamber 12. The processing chamber 11 contains gas such as argon in a nearly vacuum state, processes the object to be processed, and supplies power. The circuit chamber 12 houses a high frequency power supply circuit for sputtering and a DC power supply circuit for chucking. The processing chamber 11 is located below because the processing surface of the object to be processed faces downward to prevent dust and the like from adhering to it.

処理室１１は容器２１の開口部に絶縁部材２２
を介して高周波電極２３を配することにより密閉
構造とされており、高周波電極２３の処理室１１
側の面にはカプトンフイルム等の絶縁層２４が設
けられている。そして絶縁層２４の中心位置に被
処理物３０を昇降させるための昇降テーブル２５
が設けられており、このテーブル２５の軸部はベ
ローズ２６により気密構造がとられている。な
お、処理室１１を真空化するための要素および被
処理物３０を搬出入するための要素は図示を省略
している。 The processing chamber 11 has an insulating member 22 at the opening of the container 21.
By disposing the high frequency electrode 23 through the
An insulating layer 24 made of Kapton film or the like is provided on the side surface. A lifting table 25 for raising and lowering the workpiece 30 to the center position of the insulating layer 24
The shaft portion of the table 25 has an airtight structure with a bellows 26. Note that elements for evacuating the processing chamber 11 and elements for transporting the workpiece 30 in and out are not shown.

一方給電回路室１２は、高周波電極２３に高周
波電源RFからの高周波電流を供給するための、
コンデンサCi、CcおよびインダクタンスLcから
なるインピーダンスマツチング回路と、高周波電
極２３に被処理物３０をチヤツキングするため直
流電源ＥからスイツチS1、S2の開閉に応じて与え
られる直流電流を高周波電極２３に供給するため
の回路とが設けられている。この直流電流を供給
する回路に挿入されたインダクタンスLfおよび
コンデンサCfは高周波電流が漏洩することを防
止するためのフイルタを構成する。 On the other hand, the power feeding circuit chamber 12 is configured to supply a high frequency current from a high frequency power source RF to the high frequency electrode 23.
An impedance matching circuit consisting of capacitors Ci and Cc and an inductance Lc and a DC current given from the DC power source E according to the opening and closing of switches S 1 and S 2 to the high frequency electrode 23 in order to chuck the workpiece 30 to the high frequency electrode 23. A circuit for supplying the same is provided. An inductance Lf and a capacitor Cf inserted into the circuit supplying this direct current constitute a filter for preventing high frequency current from leaking.

そして、チヤツキング電流の通電路として処理
室側には、テーブル２５がブツシングを通つて容
器２１の外部に設けられた電流制限抵抗Ｒに接続
され、この抵抗Ｒを介して接地されている。この
抵抗Ｒはチヤツキング用直流電源Ｅが過大電流を
流すことを防止するために設けられたものである
と同時に、その一部から取出した電圧によりチヤ
ツク力の検出を行うためのものである。すなわち
抵抗Ｒに流れる電流の積分値が高周波電極２３と
被処理物１０との間の蓄積電荷量つまりチヤツク
力に等しいことから抵抗Ｒの一部から取出した電
圧を増幅器AFで増幅し積分器ITによつて積分す
ることによりチヤツク力を知ることができる。積
分器ITの出力は表示装置DPに与えられ、チヤツ
ク力の表示が行われる。表示装置DPにレベル判
定機能を持たせておけばチヤツク力の適否を表示
または出力することができる。 The table 25 is connected to a current limiting resistor R provided outside the container 21 through a bushing on the processing chamber side as a current conducting path for the charging current, and is grounded via this resistor R. This resistor R is provided to prevent the chucking DC power source E from flowing an excessive current, and at the same time, it is used to detect the chuck force using a voltage taken out from a part of the resistor R. That is, since the integral value of the current flowing through the resistor R is equal to the amount of charge accumulated between the high-frequency electrode 23 and the object to be processed 10, that is, the chuck force, the voltage taken out from a part of the resistor R is amplified by the amplifier AF, and the voltage is amplified by the integrator IT. The chuck force can be found by integrating by . The output of the integrator IT is given to a display device DP to display the chuck force. If the display device DP is provided with a level determination function, it is possible to display or output whether or not the chuck force is appropriate.

次にスパツタリング装置による被処理物の処理
と関連させて動作を説明する。 Next, the operation will be explained in relation to the processing of the workpiece by the sputtering apparatus.

まず図示しない搬送入機構により被処理物３０
が処理室１１に搬入され、このとき下降状態にあ
る昇降テーブル２５上に載置される。この状態で
処理室１１はプラズマイオン形成可能な状態にあ
るとする。 First, the workpiece 30 is transported by a transport mechanism (not shown).
is carried into the processing chamber 11 and placed on the lifting table 25 which is in a lowered state at this time. In this state, it is assumed that the processing chamber 11 is in a state where plasma ions can be formed.

次いで昇降テーブル２５を上昇させて被処理物
３０の上面を絶縁層２４に接触させる。接触した
らチヤツキングを行う。これは連動関係のスイツ
チS1を閉、S2を開として直流電源Ｅを高周波電極
２３に接続することにより行う。被処理物３０は
テーブル２５および電流制限抵抗Ｒを介して接地
されているから、高周波電極２３と被処理物１０
との間に電荷が蓄積され始める。この電荷蓄積量
は逐時表示装置DPに表示される。所定電荷が蓄
積されたら被処理物１０は高周波電極２３との間
の静電吸引力により絶縁層２４に密着するからテ
ーブル２５を下降させてよい。テーブル２５の下
降は作業員が表示装置DPを見ながら行つてもよ
いし、表示装置DPの出力により図示しないテー
ブル昇降機構を作動させてもよい。 Next, the lifting table 25 is raised to bring the upper surface of the object 30 into contact with the insulating layer 24 . If you make contact, do some chatting. This is done by closing the interlocking switch S 1 and opening S 2 to connect the DC power source E to the high frequency electrode 23 . Since the workpiece 30 is grounded via the table 25 and the current limiting resistor R, the high frequency electrode 23 and the workpiece 10
Charge begins to accumulate between the two. This charge accumulation amount is displayed on the display device DP from time to time. When a predetermined charge is accumulated, the object 10 to be processed will come into close contact with the insulating layer 24 due to the electrostatic attraction between it and the high frequency electrode 23, and the table 25 may be lowered. The table 25 may be lowered by an operator while looking at the display device DP, or a table lifting mechanism (not shown) may be operated based on the output of the display device DP.

テーブル２５が下降し切つたらスパツタリング
を行う。これは、高周波電源RFをオンにするこ
とにより行う。ただしそれに先立つてコンデンサ
Ci、Ccを調整して被処理物３０の特性に応じた
インピーダンスマツチングをとつておく。スパツ
タリング中被処理物３０を過熱させないために図
示しない冷却手段により高周波電極２３を冷却す
る。スパツタリング終了後、被処理物３０を取出
すためにテーブル２５を再び上昇させ、スイツチ
S1を開、S2を閉とする。これにより高周波電極２
３と被処理物１０との間の蓄積電荷は電流制限抵
抗Ｒを介して放電する。したがつて被処理物３０
は静電吸引力を失い、テーブル２５を下降させれ
ば被処理物３０も下降する。静電作用力が消失し
ても被処理物３０が絶縁層２４に吸着していると
きに備えて高周波電極２３と絶縁層２４との間に
エアを吹込む等の手段を設けてもよい。 When the table 25 is completely lowered, sputtering is performed. This is done by turning on the high frequency power supply RF. However, prior to that, the capacitor
Impedance matching according to the characteristics of the object 30 to be processed is achieved by adjusting Ci and Cc. In order to prevent the workpiece 30 from overheating during sputtering, the high-frequency electrode 23 is cooled by a cooling means (not shown). After sputtering is finished, the table 25 is raised again to take out the workpiece 30, and the switch is turned on.
Let S 1 be open and S 2 be closed. As a result, the high frequency electrode 2
3 and the object to be processed 10 is discharged via the current limiting resistor R. Therefore, the object to be processed 30
loses its electrostatic attraction, and when the table 25 is lowered, the object 30 to be processed also lowers. In preparation for when the object to be processed 30 remains attracted to the insulating layer 24 even after the electrostatic force disappears, a means such as blowing air between the high-frequency electrode 23 and the insulating layer 24 may be provided.

テーブル２５が下降したら図示しない搬出入機
構により被処理物３０を取出し、次に処理すべき
被処理物を装入する。以下上記動作を繰返す。 When the table 25 is lowered, the workpiece 30 is taken out by a loading/unloading mechanism (not shown), and the workpiece to be processed next is loaded. Repeat the above operation.

以上は被処理物が正常にチヤツキングされた場
合であるが、チヤツキングが正しく行われない場
合もある。これは所定時間内に高周波電極２３と
被処理物１０との間に所定の電荷が蓄積されない
場合であり、例えば被処理物３０の反り等によつ
て起きる。 The above is a case where the object to be processed is chucked normally, but chucking may not be performed correctly. This occurs when a predetermined amount of charge is not accumulated between the high-frequency electrode 23 and the object to be processed 10 within a predetermined period of time, and may occur, for example, due to warping of the object to be processed 30 or the like.

この場合は被処理物３０をスパツタリングせず
に取出す訳であるが、その判断は表示装置DPの
表示または出力による。 In this case, the object to be processed 30 is taken out without sputtering, but this determination is based on the display or output of the display device DP.

本発明は上述のように、従来の機械式チヤツキ
ングに代つて静電式チヤツキングを行い然もチヤ
ツク力を検出するようにしたため、簡単な機構で
スパツタリングに好適なチヤツキングができ、そ
の上被処理物の不具合をも把握することができる
ものであり、スパツタリング装置の構成上極めて
有用なものである。 As described above, the present invention uses electrostatic chuck instead of the conventional mechanical chuck and also detects chuck force. Therefore, chuck suitable for sputtering can be achieved with a simple mechanism, and the workpiece can be sputtered. This is extremely useful for the configuration of sputtering equipment.

【図面の簡単な説明】[Brief explanation of the drawing]

図は本発明に係るスパツタリング装置の全体構
成を示す縦断面図である。 １１……処理室、１２……給電回路室、２１…
…容器、２３……高周波電極、２４……絶縁層、
２５……昇降テーブル、Ｅ……直流電源、Ｓ……
スイツチ、Ｒ……電流制限抵抗、AF……増幅
器、IT……積分器。 The figure is a longitudinal sectional view showing the overall configuration of a sputtering device according to the present invention. 11...processing room, 12...power supply circuit room, 21...
... Container, 23 ... High frequency electrode, 24 ... Insulating layer,
25... Lifting table, E... DC power supply, S...
Switch, R...Current limiting resistor, AF...Amplifier, IT...Integrator.

Claims (1)

【特許請求の範囲】[Claims] １ 内部に所定のガスが略々真空に近い状態で収
容された処理室に高周波電極および他の電極を設
け、これら両電極間で高周波放電を行つてスパツ
タリング処理を施すために前記高周波電極近傍に
被処理物をチヤツキングする装置において、前記
処理室に面する表面に絶縁層が設けられた高周波
電極と、この高周波電極に前記絶縁層を介して対
向するように前記処理室内で被処理物を移動させ
る装置と、前記高周波電極および前記被処理物の
間に直流電圧を与える電源と、この電源から前記
高周波電極および前記被処理物に至る通電経路に
挿入された電流制限抵抗と、この抵抗に流れる電
流を積分した出力を得る検出回路とをそなえ、前
記被処理物を前記高周波電極に対し静電的に付着
させたときこれら両者間に作用する静電吸引力を
測定するようにしたことを特徴とするスパツタリ
ング装置の静電チヤツク装置。1. A high-frequency electrode and another electrode are provided in a processing chamber in which a predetermined gas is housed in a nearly vacuum state, and a high-frequency electrode is installed near the high-frequency electrode in order to perform a sputtering process by performing high-frequency discharge between these two electrodes. In an apparatus for chucking a workpiece, a high frequency electrode is provided with an insulating layer on a surface facing the processing chamber, and the workpiece is moved within the processing chamber so as to face the high frequency electrode with the insulating layer interposed therebetween. a power source that applies a DC voltage between the high-frequency electrode and the object to be processed; a current-limiting resistor inserted in a current-carrying path from the power source to the high-frequency electrode and the object to be processed; The method is characterized in that it is equipped with a detection circuit that obtains an output by integrating the current, and measures the electrostatic attraction force that acts between the object when the object to be processed is electrostatically attached to the high-frequency electrode. Electrostatic chuck device for sputtering equipment.
JP288683A 1983-01-13 1983-01-13 Electrostatic chucking unit for sputtering device Granted JPS59127847A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP288683A JPS59127847A (en) 1983-01-13 1983-01-13 Electrostatic chucking unit for sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP288683A JPS59127847A (en) 1983-01-13 1983-01-13 Electrostatic chucking unit for sputtering device

Publications (2)

Publication Number Publication Date
JPS59127847A JPS59127847A (en) 1984-07-23
JPS6244410B2 true JPS6244410B2 (en) 1987-09-21

Family

ID=11541834

Family Applications (1)

Application Number Title Priority Date Filing Date
JP288683A Granted JPS59127847A (en) 1983-01-13 1983-01-13 Electrostatic chucking unit for sputtering device

Country Status (1)

Country Link
JP (1) JPS59127847A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01199414A (en) * 1988-02-04 1989-08-10 Matsushita Electric Ind Co Ltd Inductance element and manufacture thereof

Families Citing this family (203)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61270046A (en) * 1985-05-22 1986-11-29 Toshiba Mach Co Ltd Electrostatic chucking device
JPS6230346A (en) * 1985-07-31 1987-02-09 Tokuda Seisakusho Ltd Wafer supporting device
US5325261A (en) * 1991-05-17 1994-06-28 Unisearch Limited Electrostatic chuck with improved release
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Cited By (1)

* Cited by examiner, † Cited by third party
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JPH01199414A (en) * 1988-02-04 1989-08-10 Matsushita Electric Ind Co Ltd Inductance element and manufacture thereof

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