JPS6243557B2 - - Google Patents
Info
- Publication number
- JPS6243557B2 JPS6243557B2 JP53120137A JP12013778A JPS6243557B2 JP S6243557 B2 JPS6243557 B2 JP S6243557B2 JP 53120137 A JP53120137 A JP 53120137A JP 12013778 A JP12013778 A JP 12013778A JP S6243557 B2 JPS6243557 B2 JP S6243557B2
- Authority
- JP
- Japan
- Prior art keywords
- conductors
- glass layer
- thick film
- wiring
- wiring members
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011521 glass Substances 0.000 claims description 35
- 239000004020 conductor Substances 0.000 description 54
- 239000010408 film Substances 0.000 description 26
- 238000000034 method Methods 0.000 description 15
- 239000010409 thin film Substances 0.000 description 12
- 239000006060 molten glass Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Structure Of Printed Boards (AREA)
Description
【発明の詳細な説明】 本発明は配線を有する基板に関する。[Detailed description of the invention] The present invention relates to a substrate having wiring.
感熱ヘツドや電気回路基板などに応用される配
線基板は、通常厚膜導体、薄膜抵抗体などの各種
の配線部材をその種類別にまとめ、同種類の複数
個の配線部材を並設して配線部材列とする配線構
成をなしており、これらの配線部材列は基体主面
上またはガラス層表面上における限られた広さの
領域で多くの配線部材を並べて形成することが基
板の小型化を図る上で要求される条件である。 Wiring boards used for thermal heads, electric circuit boards, etc. are usually made by grouping various wiring members such as thick film conductors and thin film resistors by type, and arranging multiple wiring members of the same type in parallel. The wiring structure is arranged in rows, and these wiring member rows are formed by arranging many wiring members in a limited area on the main surface of the substrate or the surface of the glass layer, thereby reducing the size of the board. This is the condition required above.
しかして、抵抗発熱体や薄膜配線などの薄膜法
（蒸着、スパツタリング）で形成する配線部材は
限られた面積内に精度良く数多く形成することが
可能であるが、厚膜法（スクリーン印刷）により
厚膜導体などの配線部材を形成する場合には、厚
膜法は形成可能な幅寸法および間隔寸法の最小限
界を薄膜法に比して大きくなるために、限られた
広さの領域で多数の配線部材を並べて形成するこ
とは困難で形成可能な数に制限がある。 However, although it is possible to form a large number of wiring members using thin film methods (vapor deposition, sputtering), such as resistance heating elements and thin film wiring, within a limited area with high precision, thick film methods (screen printing) When forming wiring members such as thick film conductors, the thick film method has a larger minimum width and spacing that can be formed than the thin film method. It is difficult to form wiring members in parallel, and there is a limit to the number of wiring members that can be formed.
本発明は前記事情に基づいてなされたもので、
配線部材の配置を工夫して限られた広さの領域で
多くの厚膜配線部材を精度良く並べて形成できる
ようにした配線基板を提供することを目的とす
る。 The present invention was made based on the above circumstances, and
It is an object of the present invention to provide a wiring board in which a large number of thick film wiring members can be arranged and formed with high accuracy in a limited area by devising the arrangement of wiring members.
すなわち、本発明の配線基板は、基体と、この
基体の主面に形成されたガラス層と、前記基体の
主面に複数並べて形成され夫々の一部が前記ガラ
ス層の内部を通つてその表面に導出して形成され
た第１の厚膜配線部材と、前記ガラス層の表面に
前記各第１の厚膜配線部材の導出部に対して互い
違いとなる位置に複数並べて形成された第２の厚
膜配線部材とを具備することを特徴とするもので
ある。 That is, the wiring board of the present invention includes a base body, a glass layer formed on the main surface of the base body, and a plurality of glass layers formed side by side on the main surface of the base body, a part of each of which passes through the interior of the glass layer and extends onto the surface thereof. a first thick-film wiring member formed by leading out the first thick-film wiring member; and a plurality of second thick-film wiring members formed on the surface of the glass layer at alternate positions with respect to the lead-out portion of each of the first thick-film wiring members. The device is characterized by comprising a thick film wiring member.
以下本発明について説明する。 The present invention will be explained below.
第１図および第２図は本発明による配線基板の
一実施例を示すものである。図中１はアルミナな
どのセラミツク、鉄―ニツケルクロム系合金など
の金属に絶縁被覆したもの、ガラスなどからなる
基体である。この基体１主面上には結晶化ガラス
層２が帯状に形成され、この結晶化ガラス層２に
隣接して帯状の溶融ガラス層３が形成されてい
て、これら両ガラス層２，３は段状の接合部をも
つて相互に接合している。また、結晶化ガラス層
２下側の基体１主面上から両ガラス層２，３の接
合部間を通り結晶化ガラス層２表面上にかけて連
続する複数の細長い第１導体４…が、結晶化ガラ
ス層２の長手方向に間隔を存し平行に並べて形成
してある。これら第１の厚膜配線部材である第１
導体４…は銀―パラジウム合金、銀、金などの材
料を用いて厚膜法により形成したものである。第
１導体４…の一端部４ａ…は各々両ガラス層２，
３の接合部近傍の結晶化ガラス層２表面上に位置
しており、他端部４ｂ…は各々結晶化ガラス層２
から突出して基体１主面上に位置している。結晶
化ガラス層２表面上の中央部には、矩形をなす複
数の第２導体５…が同一平面的に見て各第１導体
４…の中間部に位置するように間隔を存して平行
に並べて形成してある。これら第２の厚膜配線部
材である第２導体５…は第１導体４…と同材質を
用いて厚膜法により形成したもので、第１導体４
…に比して幅寸法が大となつている。第１導体４
…と第２導体５…との配置関係をみると、結晶化
ガラス層２表面上において各第１導体４…の端部
４ａ…と各第２導体５…は交互に１つおきに位置
して並んでおり、且つ各第１導体４…の端部４ａ
…は結晶化ガラス層２接合部近傍に位置して並ぶ
のに対し各第１導体５…は結晶化ガラス層２中央
部に位置して並んでいて両者は互に横方向に位置
をずらしてある。すなわち、第１導体４…と第２
導体５…は結晶化ガラス層２表面上で各々互い違
いに並べて配置形成されている。言換えれば第１
導体４…の端部４ａ…からなる第１導体列の横側
方に第２導体５…からなる第２導体列が設けら
れ、第２導体５…は第１導体４…の端部４ａの中
間に位置することになる。また、溶融ガラス層３
の表面上には、複数の発熱抵抗体６…が第１導体
４…と第２導体５…に各々対向するように溶融ガ
ラス層３の長手方向に間隔を存して形成してあ
る。これら発熱抵抗体６…はカーボン、五酸化タ
ンタル、シリカ、窒化タンタルなどの材料を用い
て薄膜法により形成される。溶融ガラス層３と結
晶化ガラス層２の各表面上にわたつて、発熱抵抗
体６…と第１導体４…の端部４ａ…および第２導
体５…とを各々接続する複数の薄膜配線７…が間
隔を存し並べて形成してある。この薄膜配線７…
は各導体４，５と同材質で薄膜法により形成され
ている。なお、溶融ガラス層３の接合部とは反対
側端部には各発熱抵抗体６…と共通に接続する共
通端子８が形成されており、この共通端子８は薄
膜配線７…と同材質で薄膜法により形成される。 FIGS. 1 and 2 show an embodiment of a wiring board according to the present invention. In the figure, 1 is a base made of ceramic such as alumina, metal such as iron-nickel chromium alloy coated with insulation, glass, or the like. A crystallized glass layer 2 is formed in a strip shape on the main surface of the base 1, and a strip-shaped molten glass layer 3 is formed adjacent to this crystallized glass layer 2, and both of these glass layers 2 and 3 are arranged in steps. They are joined to each other with a shaped joint. In addition, a plurality of elongated first conductors 4 that are continuous from the main surface of the substrate 1 under the crystallized glass layer 2 through the junction of both glass layers 2 and 3 to the surface of the crystallized glass layer 2 are crystallized. The glass layers 2 are arranged in parallel with each other at intervals in the longitudinal direction of the glass layer 2. These first thick film wiring members
The conductors 4 are formed by a thick film method using materials such as silver-palladium alloy, silver, and gold. One end portion 4a of the first conductor 4 is connected to both glass layers 2,
The other end portions 4b are located on the surface of the crystallized glass layer 2 near the joint portion of No.
It protrudes from the base body 1 and is located on the main surface of the base body 1. At the center of the surface of the crystallized glass layer 2, a plurality of rectangular second conductors 5 are arranged parallel to each other with an interval so that they are located in the middle of each first conductor 4 when viewed from the same plane. They are lined up and formed. The second conductors 5, which are these second thick film wiring members, are formed by a thick film method using the same material as the first conductors 4.
The width dimension is larger than that of... First conductor 4
... and the second conductor 5..., on the surface of the crystallized glass layer 2, the end portions 4a... of each first conductor 4... and each second conductor 5... are located alternately every other. and the ends 4a of each first conductor 4...
... are located and lined up near the joint of the crystallized glass layer 2, whereas each first conductor 5... is located and lined up at the center of the crystallized glass layer 2, and both are shifted in position from each other in the lateral direction. be. In other words, the first conductor 4... and the second conductor 4...
The conductors 5 are arranged alternately on the surface of the crystallized glass layer 2. In other words, the first
A second conductor row consisting of second conductors 5 is provided laterally to the first conductor row consisting of the ends 4a of the conductors 4, and the second conductors 5 are connected to the ends 4a of the first conductors 4. It will be located in the middle. In addition, the molten glass layer 3
A plurality of heating resistors 6 are formed on the surface of the molten glass layer 3 at intervals in the longitudinal direction of the molten glass layer 3 so as to face the first conductors 4 and the second conductors 5, respectively. These heating resistors 6 are formed by a thin film method using materials such as carbon, tantalum pentoxide, silica, and tantalum nitride. A plurality of thin film wirings 7 connect the heating resistors 6 and the ends 4a of the first conductors 4 and the second conductors 5, respectively, over the surfaces of the molten glass layer 3 and the crystallized glass layer 2. ... are arranged side by side with an interval between them. This thin film wiring 7...
is made of the same material as each conductor 4, 5 and is formed by a thin film method. A common terminal 8 is formed at the end of the molten glass layer 3 opposite to the joint, and is commonly connected to each heating resistor 6, and this common terminal 8 is made of the same material as the thin film wiring 7. Formed by thin film method.
しかして、前述した構成をなす配線基板は、結
晶化ガラス層２の表面に、基体１に形成した第１
導体４の端部４ａ…と第２導体５…とを各々位置
ずらして互い違いに並べて形成してある。このた
め、第１導体４…と第２導体５…を同列的に交互
に並べ配置する場合のように、各第１導体４…の
間隙と各第２導体５…の間隙に第２導体５…また
は第１導体４…が各々配置されず、もつて各導体
４…，５…を同列的に並置した場合に比して各第
１導体４…の間隔寸法と各第２導体５…の間隔寸
法を拡大することができる。すなわち、第１導体
４…と第２導体５…の各間隔寸法を厚膜法により
形成可能な大きさに設定でき、第１導体４…と第
２導体５…を各々厚膜法により形成できる。従つ
て、結晶化ガラス層２表面上の限られた広さの領
域に複数の第１導体４…と複数の第２導体５…を
一諸にまとめ並置して厚膜法により形成でき、従
来のように同列的に並置した場合に比し多数の導
体を精度良く形成することが可能となる。 Thus, the wiring board having the above-mentioned structure has a first layer formed on the base body 1 on the surface of the crystallized glass layer 2.
The ends 4a of the conductors 4 and the second conductors 5 are arranged in a staggered manner with their positions shifted. For this reason, as in the case where the first conductors 4 and the second conductors 5 are alternately arranged in the same row, the second conductors 5 are placed in the gaps between the first conductors 4 and the second conductors 5. ...or the first conductors 4... are not arranged, and the distance between the first conductors 4... and the second conductors 5... The spacing dimension can be expanded. That is, the distance between the first conductors 4 and the second conductors 5 can be set to a size that can be formed by the thick film method, and the first conductors 4 and the second conductors 5 can be formed by the thick film method. . Therefore, it is possible to form a plurality of first conductors 4 and a plurality of second conductors 5 in parallel in a limited area on the surface of the crystallized glass layer 2 by a thick film method. It is possible to form a large number of conductors with high precision compared to the case where they are arranged in the same row.
具体的には第１導体を幅寸法130μ、間隔寸法
200μ、第２導体は幅寸法160μ、間隔寸法170μ
として配置でき、厚膜法により形成可能な最小の
幅寸法100μ、間隔寸法60μであるから、前記の
配置関係で各導体を充分に形成でき、１mmの長さ
当りで６本から８本の厚膜導体を並べて形成する
ことが可能となる。 Specifically, the width of the first conductor is 130μ, and the interval is
200μ, second conductor width 160μ, spacing 170μ
Since the minimum width dimension that can be formed by the thick film method is 100μ and the spacing dimension is 60μ, each conductor can be formed sufficiently with the above arrangement, and 6 to 8 conductors can be formed per 1 mm of thickness. It becomes possible to form membrane conductors side by side.
なお、前記の実施例のように互い違いに配置し
て形成する配線部材は導体に限らず、他の種類の
ものであつても良く、同種類の配線部材を並置し
て形成する場合に適用できる。厚膜法により形成
する配線部材に有効に適用できるが、薄膜法によ
り形成される配線部材にも適用できる。配線部材
をガラス層表面上に形成する場合に限らず、基体
主面上に形成した配線部材にも適用できる。 Note that the wiring members that are arranged alternately and formed as in the above embodiments are not limited to conductors, but may be of other types, and can be applied when wiring members of the same type are arranged side by side. . Although it can be effectively applied to wiring members formed by the thick film method, it can also be applied to wiring members formed by the thin film method. The present invention is applicable not only to wiring members formed on the surface of the glass layer but also to wiring members formed on the main surface of the substrate.
本発明の配線基板は以上説明したように、基体
の主面に第１の厚膜配線部材およびこの第１の厚
膜配線部材を覆うガラス層を夫々形成するととも
に、ガラス層の表面に第２の厚膜配線部材を形成
した多数配線構造とし、ガラス層の表面に、この
ガラス層を通して導出した第１の厚膜配線部材の
端部と第２の厚膜配線部材とを互い違いに並べて
形成した構成であるから、狭い領域に多数の厚膜
配線部材を精度良く並べて形成することができ
る。 As explained above, in the wiring board of the present invention, a first thick film wiring member and a glass layer covering the first thick film wiring member are formed on the main surface of the base, and a second thick film wiring member is formed on the surface of the glass layer. A multi-wiring structure was formed in which thick film wiring members were formed, and the ends of the first thick film wiring members led out through the glass layer and the second thick film wiring members were alternately arranged on the surface of the glass layer. Because of this configuration, a large number of thick film wiring members can be formed in a narrow area in a line with high accuracy.
第１図および第２図は各々本発明による配線基
板の一実施例を示す平面図および横断面図であ
る。
１…基体、２…結晶化ガラス層、３…溶融ガラ
ス層、４…第１導体、５…第２導体、６…抵抗発
熱体、７…薄膜配線、８…共通端子。
FIG. 1 and FIG. 2 are a plan view and a cross-sectional view, respectively, showing an embodiment of a wiring board according to the present invention. DESCRIPTION OF SYMBOLS 1... Base body, 2... Crystallized glass layer, 3... Molten glass layer, 4... First conductor, 5... Second conductor, 6... Resistance heating element, 7... Thin film wiring, 8... Common terminal.
Claims (1)
層と、前記基体の主面に複数並べて形成され夫々
の一部が前記ガラス層の内部を通つてその表面に
導出して形成された第１の厚膜配線部材と、前記
ガラス層の表面に前記各第１の厚膜配線部材の導
出部に対して互い違いとなる位置に複数並べて形
成された第２の厚膜配線部材とを具備することを
特徴とする配線基板。1. A base body, a glass layer formed on the main surface of the base body, and a plurality of glass layers formed side by side on the main surface of the base body, with a part of each glass layer leading out to the surface thereof through the interior of the glass layer. and a plurality of second thick film wiring members formed on the surface of the glass layer at alternate positions with respect to the lead-out portions of the respective first thick film wiring members. A wiring board characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12013778A JPS5546549A (en) | 1978-09-29 | 1978-09-29 | Circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12013778A JPS5546549A (en) | 1978-09-29 | 1978-09-29 | Circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5546549A JPS5546549A (en) | 1980-04-01 |
| JPS6243557B2 true JPS6243557B2 (en) | 1987-09-14 |
Family
ID=14778873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12013778A Granted JPS5546549A (en) | 1978-09-29 | 1978-09-29 | Circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5546549A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922554A (en) * | 1972-06-26 | 1974-02-28 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4848615U (en) * | 1971-10-11 | 1973-06-26 | ||
| JPS4885153U (en) * | 1972-01-19 | 1973-10-16 |
-
1978
- 1978-09-29 JP JP12013778A patent/JPS5546549A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4922554A (en) * | 1972-06-26 | 1974-02-28 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5546549A (en) | 1980-04-01 |
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