JPS6243358B2 - - Google Patents
Info
- Publication number
- JPS6243358B2 JPS6243358B2 JP16948681A JP16948681A JPS6243358B2 JP S6243358 B2 JPS6243358 B2 JP S6243358B2 JP 16948681 A JP16948681 A JP 16948681A JP 16948681 A JP16948681 A JP 16948681A JP S6243358 B2 JPS6243358 B2 JP S6243358B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor
- semiconductor layer
- current
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 53
- 238000009792 diffusion process Methods 0.000 claims description 11
- 239000000969 carrier Substances 0.000 claims description 5
- 238000005253 cladding Methods 0.000 description 15
- 230000000903 blocking effect Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- 230000007423 decrease Effects 0.000 description 6
- 239000000758 substrate Substances 0.000 description 5
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16948681A JPS5871675A (ja) | 1981-10-23 | 1981-10-23 | 埋め込みへテロ構造半導体レ−ザ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16948681A JPS5871675A (ja) | 1981-10-23 | 1981-10-23 | 埋め込みへテロ構造半導体レ−ザ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5871675A JPS5871675A (ja) | 1983-04-28 |
| JPS6243358B2 true JPS6243358B2 (enrdf_load_stackoverflow) | 1987-09-12 |
Family
ID=15887419
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16948681A Granted JPS5871675A (ja) | 1981-10-23 | 1981-10-23 | 埋め込みへテロ構造半導体レ−ザ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5871675A (enrdf_load_stackoverflow) |
-
1981
- 1981-10-23 JP JP16948681A patent/JPS5871675A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5871675A (ja) | 1983-04-28 |
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