JPS6243331B2 - - Google Patents

Info

Publication number
JPS6243331B2
JPS6243331B2 JP56020125A JP2012581A JPS6243331B2 JP S6243331 B2 JPS6243331 B2 JP S6243331B2 JP 56020125 A JP56020125 A JP 56020125A JP 2012581 A JP2012581 A JP 2012581A JP S6243331 B2 JPS6243331 B2 JP S6243331B2
Authority
JP
Japan
Prior art keywords
quartz
bell gear
plasma
high frequency
gear
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56020125A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57134925A (en
Inventor
Junichi Suzuki
Harushige Kurokawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kokusai Denki Electric Inc
Original Assignee
Kokusai Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kokusai Electric Co Ltd filed Critical Kokusai Electric Co Ltd
Priority to JP56020125A priority Critical patent/JPS57134925A/ja
Publication of JPS57134925A publication Critical patent/JPS57134925A/ja
Publication of JPS6243331B2 publication Critical patent/JPS6243331B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096Flat-bed apparatus
    • H10P14/24
    • H10P14/3408
    • H10P14/3411

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP56020125A 1981-02-16 1981-02-16 Plasma cvd film producer Granted JPS57134925A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56020125A JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56020125A JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Publications (2)

Publication Number Publication Date
JPS57134925A JPS57134925A (en) 1982-08-20
JPS6243331B2 true JPS6243331B2 (show.php) 1987-09-12

Family

ID=12018394

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56020125A Granted JPS57134925A (en) 1981-02-16 1981-02-16 Plasma cvd film producer

Country Status (1)

Country Link
JP (1) JPS57134925A (show.php)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6348832A (ja) * 1986-08-19 1988-03-01 Tokyo Electron Ltd Cvd装置
JPS63129630A (ja) * 1986-11-20 1988-06-02 Fuji Electric Co Ltd プラズマcvd薄膜形成法
JP2662688B2 (ja) * 1987-10-16 1997-10-15 株式会社 半導体エネルギー研究所 被膜作製方法
JPH01115235U (show.php) * 1988-01-29 1989-08-03

Also Published As

Publication number Publication date
JPS57134925A (en) 1982-08-20

Similar Documents

Publication Publication Date Title
US4707210A (en) Plasma CVD apparatus
JPS6243331B2 (show.php)
JPH07272897A (ja) マイクロ波プラズマ装置
JP2650178B2 (ja) ドライエッチング方法及び装置
JPS592374B2 (ja) プラズマ気相成長装置
JPH0639709B2 (ja) プラズマcvd装置
JPS594025A (ja) プラズマによる処理方法
JPH09129596A (ja) 反応室のクリーニング方法
JPH02185977A (ja) 膜形成用真空装置
JPH01188678A (ja) プラズマ気相成長装置
JP3080860B2 (ja) ドライエッチング方法
JPH0239523A (ja) 半導体基板への成膜方法
JPS63244617A (ja) 乾式薄膜加工装置
JPH0277579A (ja) 堆積膜形成装置の洗浄方法
JPS635526A (ja) ドライエツチング装置
JPS6034633B2 (ja) プラズマ気相反応装置
JPH0669032B2 (ja) プラズマ処理装置
JPS5846056B2 (ja) プラズマ気相成長装置
JPH10308352A (ja) プラズマ処理方法及び半導体装置の製造方法
JPH0478478A (ja) 半導体製造装置およびその清浄化方法
JPH0625859A (ja) Cvd膜形成装置およびプラズマクリーニング方法
JPH02291125A (ja) 窒化ガリウム系化合物半導体の表面加工方法
JP2002184698A (ja) 電子部品の製造方法
JPH06252063A (ja) プラズマcvd装置
JPH06163484A (ja) 半導体製造装置