JPS6242358B2 - - Google Patents
Info
- Publication number
- JPS6242358B2 JPS6242358B2 JP60009041A JP904185A JPS6242358B2 JP S6242358 B2 JPS6242358 B2 JP S6242358B2 JP 60009041 A JP60009041 A JP 60009041A JP 904185 A JP904185 A JP 904185A JP S6242358 B2 JPS6242358 B2 JP S6242358B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor region
- transistor
- circuit
- collector
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000015654 memory Effects 0.000 claims description 85
- 239000004065 semiconductor Substances 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 9
- 210000004027 cell Anatomy 0.000 description 55
- 238000010586 diagram Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 230000010354 integration Effects 0.000 description 5
- 230000003321 amplification Effects 0.000 description 4
- 238000003199 nucleic acid amplification method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- -1 Boron ions Chemical class 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 210000004899 c-terminal region Anatomy 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60009041A JPS60217591A (ja) | 1985-01-23 | 1985-01-23 | 記憶回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60009041A JPS60217591A (ja) | 1985-01-23 | 1985-01-23 | 記憶回路 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP53006212A Division JPS6057707B2 (ja) | 1978-01-25 | 1978-01-25 | 記憶回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60217591A JPS60217591A (ja) | 1985-10-31 |
| JPS6242358B2 true JPS6242358B2 (ko) | 1987-09-08 |
Family
ID=11709557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60009041A Granted JPS60217591A (ja) | 1985-01-23 | 1985-01-23 | 記憶回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60217591A (ko) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100273A (en) * | 1978-01-25 | 1979-08-07 | Hitachi Ltd | Memory circuit and variable resistance element |
-
1985
- 1985-01-23 JP JP60009041A patent/JPS60217591A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54100273A (en) * | 1978-01-25 | 1979-08-07 | Hitachi Ltd | Memory circuit and variable resistance element |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60217591A (ja) | 1985-10-31 |
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