JPS6240458A - Exposing method for thin film pattern - Google Patents

Abstract

PURPOSE:To prevent close adhesion of a photomask and resist and to prevent the occurrence of resist separation by coating a lubricant such as 'Teflon(R)' resin etc. on the surface of the photomask. CONSTITUTION:A pattern a is provided on a plate made of glass, quartz etc., and a lubricant such as Teflon resin etc. is coated on the pattern by a spin coater to form a lubricant layer 9. A photomask 4' is placed on a mask stage 10 and fixed by vacuum adsorption 11. A wafer 1 on which resist 3 is applied is placed on a wafer stage 12. The wafer stage 12 is fixed to a vertically movable shaft 13, and the shaft 13 is connected to a pulse motor. The shaft 13 is raised by rotation of the pulse motor, and the wafer 1 is brought into contact with the photomask 4'. At this time, the wafer 1 is exhausted as shown by the arrow mark A, and closely adhered fixing is made. When the photomask 4' is detached from the wafer 1 after exposure by light, close adhesion of the photomask 4' and resist 3 is prevented, and separation of resist does not occur owing to coating of the lubricant layer 9 of Teflon.

Description

[Detailed Description of the Invention] [Summary] The present invention involves bringing the patterned surface of a photomask into close contact with a resist surface coated on a wafer, and transferring the photomask pattern as a resist pattern onto the wafer by irradiating light. In this exposure method, a lubricant such as Teflon resin is applied to the photomask pattern surface, and when the photomask is separated from the wafer after exposure, the lubricant can prevent resist peeling.

[Industrial application field]

The present invention relates to a thin film pattern exposure method for forming a thin film pattern such as a thin film magnetic head by exposing a resist film on a wafer using a photomask and transferring the photomask pattern onto the wafer as a resist pattern.

When forming a pattern on a wafer, for example, a metal film 2 is first attached to the wafer 1 by sputtering, vapor deposition, plating, etc., as shown in FIG. 3(A). A resist 3 is applied on top of it as shown in (2), a photomask 4 is placed on top of it, and light is irradiated to create the shadow of pattern a (pattern a in the figure is black and does not allow light to pass through). When this is developed, a resist pattern 5 as shown in (■) remains. After etching this, the resist pattern 5 is removed and a metal pattern 6 can be formed as shown in (3).

In addition, the resist 3 is applied on the wafer 1 as shown in ■ in FIG.
make. A metal film 8 is formed thereon by spucking, vapor deposition, or plating as shown in (2), and the resist 3 is removed to form a metal pattern 6 as shown in (2).

The thin film head is formed using the above two methods, but the most important thing is that when the resist 3 is exposed to light, it is necessary that the resist 3 remains faithfully in the pattern a of the photomask 4. be.

[Conventional technology]

Conventional exposure methods for forming metal films on wafers are:
For example, as shown in FIG. 4(a), a resist 3 is applied onto a wafer l, and a photomask 4 having a pattern a is applied thereon.

In this case, in order to faithfully transfer the pattern a of the photomask 4 onto the wafer 1, the wafer 1 and the photomask 4 are arranged in close contact with each other without any gap.

[Problems that the invention attempts to solve]

The pattern a of the conventional photomask 4 is faithfully applied to the wafer 1.
In order to transfer the image onto the surface, contact l[i light is applied.

When the photomask 4 is separated from the wafer 1 after exposure, since the photomask 4 and the resist 3 are in close contact with each other, there is a problem that the resist 3 is peeled off as shown in FIG. 4(b).

I'll keep it. The surface of the photomask 4' having the pattern a is coated with a lubricant layer 9 such as Teflon resin. Contact exposure is performed on the resist 3 of the wafer 1 with a photomask 4 in close contact.

[Effect]

That is, when the photomask 4' is separated from the wafer 1 as shown by the arrow in FIG. The transfer accuracy of pattern a is improved without peeling off.

〔Example〕

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 2 is a diagram explaining the present invention in detail.

Note that the same reference numerals indicate the same objects throughout the figures.

In the figure, reference numeral 4' denotes a photomask, and a pattern a is formed on a plate material such as glass or quartz, and a lubricant layer 9 is formed by applying a lubricant such as Teflon resin thereon using a spin coater. The photomask 4' is placed on a mask stage 10 and fixed by vacuum suction 11. On the other hand, the wafer 1 coated with the cyst 3 is placed on the wafer stage 12. This wafer stage 12 is fixed to the shirt 3 which moves up and down, and the shirt 13 is connected to a pulse motor (not shown).

The rotation of the pulse motor causes the shaft 13 to rise, and the wafer 1 and photomask 4' come into contact.

At this time, the wafer 1 is evacuated as shown by arrow A, and tightly fixed.

After being exposed to light, the photomask 4' is attached to the wafer 1.
When the photomask 4' and the resist 3 are separated from each other, since the Teflon lubricant layer 9 is coated, the photomask 4' and the resist 3 are prevented from coming into close contact with each other, and the resist does not peel off.

〔Effect of the invention〕

As explained above, according to the present invention, by coating the photomask surface with a lubricant such as Teflon resin, it is possible to prevent the photomask from adhering to the resist, and resist peeling does not occur.

[Brief explanation of the drawing]

Figures 1 (a) and (b) are diagrams explaining the present invention in detail, Figure 2 are diagrams explaining the invention in detail, and Figures 3 (a) and (b) are diagrams explaining conventional film formation. , FIGS. 4(a) and 4(b) are diagrams for explaining conventional contact exposure. In the figure, 1 is a wafer, 3 is a resist, 4' is a photomask, 9 is a lubricant layer, 10 is a mask stage, 11 is a vacuum suction, 12 is a wafer stage, and 13 is a shaft.

Claims (1)

[Claims] On the surface of the resist (3) coated on the wafer (1),
The pattern (a) side of the photomask (4') is brought into close contact with the pattern (a) side of the photomask (4'), and the pattern (a) of the photomask (4') is
) onto the resist (3), wherein a lubricant (9) such as Teflon resin is applied to the pattern (a) surface of the photomask (4'), and after exposure, the photomask ( 4') A method for exposing a thin film pattern, characterized in that peeling of the resist is prevented when the wafer (1) is separated from the wafer (1).