JPS6238457A - Method for developing resist - Google Patents

Method for developing resist

Info

Publication number
JPS6238457A
JPS6238457A JP17749885A JP17749885A JPS6238457A JP S6238457 A JPS6238457 A JP S6238457A JP 17749885 A JP17749885 A JP 17749885A JP 17749885 A JP17749885 A JP 17749885A JP S6238457 A JPS6238457 A JP S6238457A
Authority
JP
Japan
Prior art keywords
substrate
resist
developer
ultrasonic waves
development
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17749885A
Other languages
Japanese (ja)
Other versions
JPH07107604B2 (en
Inventor
Susumu Miyabe
宮部 進
Takashi Sato
貴 佐藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Asahi Chemical Industry Co Ltd
Original Assignee
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asahi Chemical Industry Co Ltd filed Critical Asahi Chemical Industry Co Ltd
Priority to JP60177498A priority Critical patent/JPH07107604B2/en
Publication of JPS6238457A publication Critical patent/JPS6238457A/en
Publication of JPH07107604B2 publication Critical patent/JPH07107604B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03CPHOTOSENSITIVE MATERIALS FOR PHOTOGRAPHIC PURPOSES; PHOTOGRAPHIC PROCESSES, e.g. CINE, X-RAY, COLOUR, STEREO-PHOTOGRAPHIC PROCESSES; AUXILIARY PROCESSES IN PHOTOGRAPHY
    • G03C5/00Photographic processes or agents therefor; Regeneration of such processing agents
    • G03C5/18Diazo-type processes, e.g. thermal development, or agents therefor

Abstract

PURPOSE:To form a resist pattern having sharp edge by immersing a substrate in a developer, applying ultrasonic waves to the substrate for a prescribed time and swinging the substrate until it is taken out of the developer. CONSTITUTION:Ultrasonic waves are applied to each substrate 1 having a resist from an ultrasonic generator 3 during development and the substrate 1 is swung with a swinging device 4. When ultrasonic waves are applied in the latter stage of development, the cured part of the resist is stripped, so ultrasonic waves are preferably applied for the first half of the required developing time. Thus, the uncured part can be removed nearly perfectly without stripping the cured part, and a resist pattern having sharp edges can be formed.

Description

【発明の詳細な説明】 [#梁上の利用分野] 本発明は、レジストパターンの現像残りを少なくして良
好に現像を行うレジストの現像方法に関するものである
DETAILED DESCRIPTION OF THE INVENTION [Field of Application on Beams] The present invention relates to a resist developing method that reduces the amount of undeveloped resist patterns and performs good development.

[従来の技術] 一般に、基板−ヒにレジストパターンを形成するにあた
り、基板1:にレジストを一様に被着17、そのトにパ
ターンマスクをあてて露光を行い、l/ジストヲハター
ンに従って硬化させ、ついで、現像処理において、硬化
したレジストを残し、未硬化部分のレジストを除去し、
以て、レジストパターンを形成している。
[Prior Art] Generally, when forming a resist pattern on a substrate, a resist is uniformly applied to the substrate 1, exposed to light by applying a pattern mask, and cured according to the pattern of the resist pattern. Then, in a development process, the hardened resist is left and the unhardened portions of the resist are removed.
A resist pattern is thus formed.

このような現像工程において、レジストパターンの現像
残りを少なくして良好に現像を行うべく、従来は現像液
に超音波をかけたり、レジストパターンの形成されてい
る基板を揺動したりすることが行われている。超音波は
有効ではあるが。
In such a development process, in order to reduce the amount of undeveloped resist pattern and to perform good development, conventionally it has been necessary to apply ultrasonic waves to the developer or to shake the substrate on which the resist pattern is formed. It is being done. Although ultrasound is effective.

現像むら、すなわち現像の不十分な個所ができやすいの
r、PB−i’i波を超時間かける必要があり、その結
果、硬化部分のレジストが剥離することがあった。揺動
を行う場合には、揺動だけでは現像残りを皆無にするこ
とは到底不vr能であり、しかも超音波をかけたときに
比べ現像されたレジスト層のニー7ジ部に鈍りがあった
Since uneven development, that is, insufficiently developed areas are likely to occur, it is necessary to apply the PB-i'i wave for an extremely long time, and as a result, the resist in the cured portions may peel off. When performing rocking, it is completely impossible to eliminate any undeveloped parts by just rocking, and moreover, the knee portions of the developed resist layer are duller than when ultrasonic waves are applied. Ta.

[発す1が解決しようとする問題点] そこで、本発明の目的は、上述したような欠点を除去し
て、現像を良好に行うレジストの現像方法を提供するこ
とにある。
[Problems to be Solved by Issue 1] Therefore, an object of the present invention is to provide a resist developing method that eliminates the above-mentioned drawbacks and performs development well.

[問題を解決するための手段] このような目的を達成するために、本発明は。[Means to solve the problem] In order to achieve such an object, the present invention.

露光ずみレジスト層の形成されている基板を現像液中に
浸漬して現像処理を施すレジスト現像方法において、X
板を前記現像液に浸漬してから所定時間にわたって超音
波を基板にかけると共に、基板を現像液に浸漬している
間にわたって、基板を揺動させることを特徴とする。
X
The method is characterized in that after the plate is immersed in the developer, ultrasonic waves are applied to the substrate for a predetermined period of time, and the substrate is oscillated while the substrate is immersed in the developer.

ここで、超音波印加時間を全浸漬時間のうちの1/20
〜1/2 とするのが好ましく、特に1/15〜1/4
とするのがより良好である。また、基板の浸漬後直ちに
超音波を印加するのが好適である。
Here, the ultrasonic application time is 1/20 of the total immersion time.
It is preferable to set it as 1/2 to 1/2, especially 1/15 to 1/4
It is better to Further, it is preferable to apply ultrasonic waves immediately after dipping the substrate.

[作 用] 未発明によれば、レジストのうち硬化させた部分が剥離
することなく未硬化部分をほぼ完全に除ノ5でき、以て
レジストのニー7ジ部分をシャープにしてレジストパタ
ーンを形成することができ、良好なレジスト現像を行う
ことができる。
[Function] According to the invention, it is possible to almost completely remove the uncured portion of the resist without peeling off the hardened portion, thereby sharpening the knee portion of the resist to form a resist pattern. It is possible to perform good resist development.

[実施例1 以下に、図面を参照して本発明の詳細な説明する。[Example 1 The present invention will be described in detail below with reference to the drawings.

第1図は、未発Ip1により現像を行う場合に、露光ず
みレジスト層の形成されている基板1を浸漬する現像溶
槽2を示し、この槽z内には超音波振動子3を配設して
、基板1に対して所定方向に超音波を伝播させる。4は
基板lを所定方向に揺動させる揺動装置である。
FIG. 1 shows a developing solution tank 2 in which a substrate 1 on which an exposed resist layer is formed is immersed when development is performed using unreleased Ip1, and an ultrasonic vibrator 3 is arranged in this tank z. Then, ultrasonic waves are propagated in a predetermined direction with respect to the substrate 1. Reference numeral 4 denotes a swinging device for swinging the substrate l in a predetermined direction.

A:発明では、現像中にレジス基板lに超音波振動子3
より超音波をかけ、およびその超音波と組合せて、揺動
波η4により基板1を揺動させる。
A: In the invention, the ultrasonic vibrator 3 is placed on the resist substrate l during development.
An ultrasonic wave is applied, and in combination with the ultrasonic wave, the substrate 1 is oscillated by an oscillating wave η4.

その場合に、超)′?波を印加する時間については、現
像の後段階で超音波をかけると、レジストの硬化部分の
剥離が多くなるので、好ましくは、現像「程の蒔11;
1のうち1/2より前に超音波を印加する。より好まし
くは、前工程の1/4より前、さらに好ましくは現像の
最初の時点から超音波の印加を開始する0本発明では、
レジストに対して超音波を均一に作用させるために、a
音波の伝わる方向とほぼ同じ方向に基板lを機械的に揺
動する。
In that case, super )′? As for the time for applying waves, it is preferable to apply ultrasonic waves after development, since the cured portion of the resist will often peel off.
Ultrasonic waves are applied before 1/2 of 1. More preferably, the application of ultrasonic waves is started before 1/4 of the previous step, and even more preferably from the beginning of development.
In order to apply ultrasonic waves uniformly to the resist, a
The substrate l is mechanically oscillated in substantially the same direction as the direction in which the sound waves propagate.

かかる揺動のピッチは、超音波の波長より艮い範囲で、
なるべく小さくすることが層2の効率に好ましい。好ま
しくは、 (波長)≦揺動ピッチ≦(波長)×20とする。より好
ましくは、 ?×(波長)≦揺動ピッチ≦(波長)XIQとする。た
とえば、波長13cmに対して揺動ピッチを5c+sと
する。
The pitch of this oscillation is within a range that is greater than the wavelength of the ultrasonic wave,
It is preferable for the efficiency of layer 2 to make it as small as possible. Preferably, (wavelength)≦oscillation pitch≦(wavelength)×20. More preferably, ? ×(wavelength)≦oscillation pitch≦(wavelength)XIQ. For example, let the swing pitch be 5c+s for a wavelength of 13cm.

揺動速度は、基板lに負荷をかけない範囲で可及的速い
方がよい、好ましくは、 2c厘7sec≦揺動線速度≦50c鳳/seaとする
。より好ましくは、 5 am/see  ≦拙動線速度≦25cm/see
とする。
The swinging speed should be as fast as possible without applying a load to the substrate 1, preferably 2cm x 7sec≦oscillation linear speed≦50cm/sea. More preferably, 5 am/see ≦ linear velocity ≦ 25 cm/see
shall be.

さらにまた、超音波の強さや移動を変えたり、超音波源
3の位置を移動させることなども現像を良好に行うのに
有効であるが、槽2の構造などをも考慮すると、超音波
現像と揺動とを併用するのが最も好ましい。
Furthermore, changing the intensity and movement of the ultrasonic waves, and moving the position of the ultrasonic source 3 are effective ways to perform development well, but when considering the structure of the bath 2, etc. It is most preferable to use a combination of oscillation and oscillation.

次に未発用の態様を一層明確にするために実施例をあげ
て説明するが、未発11は以ドの実施例にのみ限定され
るものではなく、種々の変形が1能であること勿論であ
る。
Next, in order to further clarify the aspects of the unreleased version, examples will be given and explained; however, the unreleased version 11 is not limited to the following examples, and various modifications are possible. Of course.

厚さ80延層で、寸法650 X400の銅箔上に「ナ
カセネガティブレジス)747Jを、硬化後の厚みが4
1Lmになるように塗布し、ついでその−Lをマスクパ
ターンで覆って露光し、このレジストを硬化させた。そ
の後、上述のレジストについての専用の現像液を用いて
3つの槽において以下の条件で現像した。
"Nakase Negative Regis) 747J was applied on a copper foil with dimensions of 650 x 400 with a thickness of 80 layers and a thickness of 4 after curing.
The resist was coated to a thickness of 1 Lm, and then the -L was covered with a mask pattern and exposed to light to harden the resist. Thereafter, development was carried out in three tanks under the following conditions using a dedicated developer for the above-mentioned resist.

第1〜第3槽のいずれにおいても、基板を底面と垂直方
向に固定し、縦方向にストローク10cm、線速1([
15cm+/seeで揺動しながら3分間浸漬した。第
1槽のド部に超■波発振r−を設け、50KHzの超音
波を−1一方向へ伝搬させた。この超音波の発信時間は
、基板を浸漬した直後から1分間のみとした。液温は2
5℃とした。パターンとしては線幅30勝厘で、6本/
鵬層の縞状パターンを用いた。ここで、第1槽では最初
の1分間だけ超音波をかけ、第1−第3槽のいずれも3
分間全体にわたって揺動を行った。基板は第1槽から順
次に第3槽まで各3分間浸漬した。
In any of the first to third tanks, the substrate was fixed perpendicular to the bottom surface, the stroke was 10 cm in the vertical direction, and the linear speed was 1 ([
It was immersed for 3 minutes while rocking at 15 cm+/see. An ultrasonic wave oscillator r- was provided in the do part of the first tank, and a 50 KHz ultrasonic wave was propagated in one direction. The ultrasonic wave was transmitted for only one minute immediately after the substrate was immersed. The liquid temperature is 2
The temperature was set at 5°C. The pattern has a line width of 30 cm and 6 lines/
The striped pattern of the Peng layer was used. Here, ultrasonic waves are applied only for the first minute in the first tank, and three
Rocking was performed for the entire minute. The substrates were immersed for 3 minutes in each tank sequentially from the first tank to the third tank.

本発明の実施例と共に、比較例として、超音波印加時間
および揺動時間を種々変えた場合の結果を次の第1表に
示す。
Table 1 below shows the results of various ultrasonic application times and rocking times as comparative examples as well as examples of the present invention.

\へ、 ゛へ・2) \3、 \〜、 ゝ−8 X8512) 〜 \\、 \3、 ゝ・1、 このように、本発明によれば、レジスト硬化部分の剥離
個所も、レジスト未硬化部分の現像残りの個所もない状
態でレジストパターンが現像された銅箔を得ることがで
きた。ここで、超音波の印加と揺動とを同時に行う時間
は、全浸漬時間1/20〜1/2 とするのが好ましく
、特に1/15〜1/4がよりIl−/ましかった。
\, ゛, 2) \3, \~, ゝ-8 It was possible to obtain a copper foil in which the resist pattern was developed without any undeveloped portions of the cured portions. Here, the time for simultaneously applying the ultrasonic waves and shaking is preferably 1/20 to 1/2 of the total immersion time, and particularly 1/15 to 1/4 is more desirable.

[発明の効果] 以I−から明らかなように、本発明によれば、レジスト
のうち硬化させた部分が剥離することなく未硬化部分を
ほぼ完全に除去でき、以てレジストのエツジ部分をシャ
ープにしてレジストパターンを形成することができ、良
好なレジスト現像を行うことができる。
[Effects of the Invention] As is clear from I- below, according to the present invention, the hardened portion of the resist can be almost completely removed without peeling off, and the edge portions of the resist can be sharpened. It is possible to form a resist pattern using the same method, and to perform good resist development.

【図面の簡単な説明】 第1図は本発明を実施する現像液槽を示す線図である。 ■・・・レジスト基板、 2・・・現像液槽。 3・・・超音波振動子、 4・・・揺動装置。[Brief explanation of drawings] FIG. 1 is a diagram showing a developer tank in which the present invention is implemented. ■・・・Resist substrate, 2...Developer tank. 3... Ultrasonic vibrator, 4... Rocking device.

Claims (1)

【特許請求の範囲】 1)露光ずみレジスト層の形成されている基板を現像液
中に浸漬して現像処理を施すレジスト現像方法において
、前記基板を前記現像液に浸漬してから所定時間にわた
って超音波を前記基板にかけると共に、前記基板を前記
現像液に浸漬している間にわたって、前記基板を揺動さ
せることを特徴とするレジスト現像方法。 2)特許請求の範囲第1項記載のレジスト現像方法にお
いて、 前記所定時間は前記基板を前記現像液に浸漬している時
間の1/20〜1/2であることを特徴とするレジスト
現像方法。 3)特許請求の範囲第1項記載のレジスト現像方法にお
いて、 前記所定時間は前記基板を前記現像液に浸漬している時
間の1/15〜1/4であることを特徴とするレジスト
現像方法。 4)特許請求の範囲第1項ないし第3項のいずれかの項
に記載のレジスト現像方法において、前記基板を前記現
像液に浸漬した直後から前記超音波を前記基板にかける
ことを特徴とするレジスト現像方法。
[Scope of Claims] 1) In a resist development method in which a substrate on which an exposed resist layer is formed is immersed in a developer to perform a development process, the substrate is immersed in the developer and then heated for a predetermined period of time. A resist developing method, comprising applying sound waves to the substrate and shaking the substrate while the substrate is immersed in the developer. 2) The resist developing method according to claim 1, wherein the predetermined time is 1/20 to 1/2 of the time during which the substrate is immersed in the developer. . 3) The resist developing method according to claim 1, wherein the predetermined time is 1/15 to 1/4 of the time during which the substrate is immersed in the developer. . 4) The resist developing method according to any one of claims 1 to 3, characterized in that the ultrasonic waves are applied to the substrate immediately after the substrate is immersed in the developer. Resist development method.
JP60177498A 1985-08-14 1985-08-14 Resist development method Expired - Lifetime JPH07107604B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60177498A JPH07107604B2 (en) 1985-08-14 1985-08-14 Resist development method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60177498A JPH07107604B2 (en) 1985-08-14 1985-08-14 Resist development method

Publications (2)

Publication Number Publication Date
JPS6238457A true JPS6238457A (en) 1987-02-19
JPH07107604B2 JPH07107604B2 (en) 1995-11-15

Family

ID=16031953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60177498A Expired - Lifetime JPH07107604B2 (en) 1985-08-14 1985-08-14 Resist development method

Country Status (1)

Country Link
JP (1) JPH07107604B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106757A (en) * 1988-10-14 1990-04-18 Matsushita Electric Ind Co Ltd Method for development processing of color filter

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267975A (en) * 1975-12-03 1977-06-06 Shimada Rika Kogyo Kk Method of photoetching
JPS54136908A (en) * 1978-04-14 1979-10-24 Hitachi Ltd Device for development and etching
JPS584143A (en) * 1981-06-30 1983-01-11 Fujitsu Ltd Developing method for positive resist film
JPS5844441A (en) * 1981-09-11 1983-03-15 Toyobo Co Ltd Manufacture of screen printing plate
JPS5930913U (en) * 1982-08-23 1984-02-25 トヨタ自動車株式会社 Grommet for tapping screw
JPS60178449A (en) * 1984-02-27 1985-09-12 Canon Electronics Inc Method for developing resist

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5267975A (en) * 1975-12-03 1977-06-06 Shimada Rika Kogyo Kk Method of photoetching
JPS54136908A (en) * 1978-04-14 1979-10-24 Hitachi Ltd Device for development and etching
JPS584143A (en) * 1981-06-30 1983-01-11 Fujitsu Ltd Developing method for positive resist film
JPS5844441A (en) * 1981-09-11 1983-03-15 Toyobo Co Ltd Manufacture of screen printing plate
JPS5930913U (en) * 1982-08-23 1984-02-25 トヨタ自動車株式会社 Grommet for tapping screw
JPS60178449A (en) * 1984-02-27 1985-09-12 Canon Electronics Inc Method for developing resist

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02106757A (en) * 1988-10-14 1990-04-18 Matsushita Electric Ind Co Ltd Method for development processing of color filter

Also Published As

Publication number Publication date
JPH07107604B2 (en) 1995-11-15

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