JPS6238457A - Method for developing resist - Google Patents

Abstract

PURPOSE:To form a resist pattern having sharp edge by immersing a substrate in a developer, applying ultrasonic waves to the substrate for a prescribed time and swinging the substrate until it is taken out of the developer. CONSTITUTION:Ultrasonic waves are applied to each substrate 1 having a resist from an ultrasonic generator 3 during development and the substrate 1 is swung with a swinging device 4. When ultrasonic waves are applied in the latter stage of development, the cured part of the resist is stripped, so ultrasonic waves are preferably applied for the first half of the required developing time. Thus, the uncured part can be removed nearly perfectly without stripping the cured part, and a resist pattern having sharp edges can be formed.

Description

DETAILED DESCRIPTION OF THE INVENTION [Field of Application on Beams] The present invention relates to a resist developing method that reduces the amount of undeveloped resist patterns and performs good development.

[Prior Art] Generally, when forming a resist pattern on a substrate, a resist is uniformly applied to the substrate 1, exposed to light by applying a pattern mask, and cured according to the pattern of the resist pattern. Then, in a development process, the hardened resist is left and the unhardened portions of the resist are removed.
A resist pattern is thus formed.

In such a development process, in order to reduce the amount of undeveloped resist pattern and to perform good development, conventionally it has been necessary to apply ultrasonic waves to the developer or to shake the substrate on which the resist pattern is formed. It is being done. Although ultrasound is effective.

Since uneven development, that is, insufficiently developed areas are likely to occur, it is necessary to apply the PB-i'i wave for an extremely long time, and as a result, the resist in the cured portions may peel off. When performing rocking, it is completely impossible to eliminate any undeveloped parts by just rocking, and moreover, the knee portions of the developed resist layer are duller than when ultrasonic waves are applied. Ta.

[Problems to be Solved by Issue 1] Therefore, an object of the present invention is to provide a resist developing method that eliminates the above-mentioned drawbacks and performs development well.

[Means to solve the problem] In order to achieve such an object, the present invention.

X
The method is characterized in that after the plate is immersed in the developer, ultrasonic waves are applied to the substrate for a predetermined period of time, and the substrate is oscillated while the substrate is immersed in the developer.

Here, the ultrasonic application time is 1/20 of the total immersion time.
It is preferable to set it as 1/2 to 1/2, especially 1/15 to 1/4
It is better to Further, it is preferable to apply ultrasonic waves immediately after dipping the substrate.

[Function] According to the invention, it is possible to almost completely remove the uncured portion of the resist without peeling off the hardened portion, thereby sharpening the knee portion of the resist to form a resist pattern. It is possible to perform good resist development.

[Example 1 The present invention will be described in detail below with reference to the drawings.

FIG. 1 shows a developing solution tank 2 in which a substrate 1 on which an exposed resist layer is formed is immersed when development is performed using unreleased Ip1, and an ultrasonic vibrator 3 is arranged in this tank z. Then, ultrasonic waves are propagated in a predetermined direction with respect to the substrate 1. Reference numeral 4 denotes a swinging device for swinging the substrate l in a predetermined direction.

A: In the invention, the ultrasonic vibrator 3 is placed on the resist substrate l during development.
An ultrasonic wave is applied, and in combination with the ultrasonic wave, the substrate 1 is oscillated by an oscillating wave η4.

In that case, super )′? As for the time for applying waves, it is preferable to apply ultrasonic waves after development, since the cured portion of the resist will often peel off.
Ultrasonic waves are applied before 1/2 of 1. More preferably, the application of ultrasonic waves is started before 1/4 of the previous step, and even more preferably from the beginning of development.
In order to apply ultrasonic waves uniformly to the resist, a
The substrate l is mechanically oscillated in substantially the same direction as the direction in which the sound waves propagate.

The pitch of this oscillation is within a range that is greater than the wavelength of the ultrasonic wave,
It is preferable for the efficiency of layer 2 to make it as small as possible. Preferably, (wavelength)≦oscillation pitch≦(wavelength)×20. More preferably, ? ×(wavelength)≦oscillation pitch≦(wavelength)XIQ. For example, let the swing pitch be 5c+s for a wavelength of 13cm.

The swinging speed should be as fast as possible without applying a load to the substrate 1, preferably 2cm x 7sec≦oscillation linear speed≦50cm/sea. More preferably, 5 am/see ≦ linear velocity ≦ 25 cm/see
shall be.

Furthermore, changing the intensity and movement of the ultrasonic waves, and moving the position of the ultrasonic source 3 are effective ways to perform development well, but when considering the structure of the bath 2, etc. It is most preferable to use a combination of oscillation and oscillation.

Next, in order to further clarify the aspects of the unreleased version, examples will be given and explained; however, the unreleased version 11 is not limited to the following examples, and various modifications are possible. Of course.

"Nakase Negative Regis) 747J was applied on a copper foil with dimensions of 650 x 400 with a thickness of 80 layers and a thickness of 4 after curing.
The resist was coated to a thickness of 1 Lm, and then the -L was covered with a mask pattern and exposed to light to harden the resist. Thereafter, development was carried out in three tanks under the following conditions using a dedicated developer for the above-mentioned resist.

In any of the first to third tanks, the substrate was fixed perpendicular to the bottom surface, the stroke was 10 cm in the vertical direction, and the linear speed was 1 ([
It was immersed for 3 minutes while rocking at 15 cm+/see. An ultrasonic wave oscillator r- was provided in the do part of the first tank, and a 50 KHz ultrasonic wave was propagated in one direction. The ultrasonic wave was transmitted for only one minute immediately after the substrate was immersed. The liquid temperature is 2
The temperature was set at 5°C. The pattern has a line width of 30 cm and 6 lines/
The striped pattern of the Peng layer was used. Here, ultrasonic waves are applied only for the first minute in the first tank, and three
Rocking was performed for the entire minute. The substrates were immersed for 3 minutes in each tank sequentially from the first tank to the third tank.

Table 1 below shows the results of various ultrasonic application times and rocking times as comparative examples as well as examples of the present invention.

\, ゛, 2) \3, \~, ゝ-8 It was possible to obtain a copper foil in which the resist pattern was developed without any undeveloped portions of the cured portions. Here, the time for simultaneously applying the ultrasonic waves and shaking is preferably 1/20 to 1/2 of the total immersion time, and particularly 1/15 to 1/4 is more desirable.

[Effects of the Invention] As is clear from I- below, according to the present invention, the hardened portion of the resist can be almost completely removed without peeling off, and the edge portions of the resist can be sharpened. It is possible to form a resist pattern using the same method, and to perform good resist development.

[Brief explanation of drawings] FIG. 1 is a diagram showing a developer tank in which the present invention is implemented. ■・・・Resist substrate, 2...Developer tank. 3... Ultrasonic vibrator, 4... Rocking device.

Claims (1)

[Scope of Claims] 1) In a resist development method in which a substrate on which an exposed resist layer is formed is immersed in a developer to perform a development process, the substrate is immersed in the developer and then heated for a predetermined period of time. A resist developing method, comprising applying sound waves to the substrate and shaking the substrate while the substrate is immersed in the developer. 2) The resist developing method according to claim 1, wherein the predetermined time is 1/20 to 1/2 of the time during which the substrate is immersed in the developer. . 3) The resist developing method according to claim 1, wherein the predetermined time is 1/15 to 1/4 of the time during which the substrate is immersed in the developer. . 4) The resist developing method according to any one of claims 1 to 3, characterized in that the ultrasonic waves are applied to the substrate immediately after the substrate is immersed in the developer. Resist development method.