JPS6237550B2 - - Google Patents

Info

Publication number
JPS6237550B2
JPS6237550B2 JP53048944A JP4894478A JPS6237550B2 JP S6237550 B2 JPS6237550 B2 JP S6237550B2 JP 53048944 A JP53048944 A JP 53048944A JP 4894478 A JP4894478 A JP 4894478A JP S6237550 B2 JPS6237550 B2 JP S6237550B2
Authority
JP
Japan
Prior art keywords
region
conductivity type
insulating film
gate
high concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP53048944A
Other languages
English (en)
Japanese (ja)
Other versions
JPS54140880A (en
Inventor
Kenji Tokuyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP4894478A priority Critical patent/JPS54140880A/ja
Publication of JPS54140880A publication Critical patent/JPS54140880A/ja
Publication of JPS6237550B2 publication Critical patent/JPS6237550B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Amplifiers (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
JP4894478A 1978-04-24 1978-04-24 Semiconductor device Granted JPS54140880A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4894478A JPS54140880A (en) 1978-04-24 1978-04-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4894478A JPS54140880A (en) 1978-04-24 1978-04-24 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS54140880A JPS54140880A (en) 1979-11-01
JPS6237550B2 true JPS6237550B2 (enrdf_load_html_response) 1987-08-13

Family

ID=12817379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4894478A Granted JPS54140880A (en) 1978-04-24 1978-04-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54140880A (enrdf_load_html_response)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0474464A (ja) * 1990-07-16 1992-03-09 Matsushita Electron Corp 半導体装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4952467U (enrdf_load_html_response) * 1972-08-15 1974-05-09

Also Published As

Publication number Publication date
JPS54140880A (en) 1979-11-01

Similar Documents

Publication Publication Date Title
US4009483A (en) Implementation of surface sensitive semiconductor devices
US4086642A (en) Protective circuit and device for metal-oxide-semiconductor field effect transistor and method for fabricating the device
US4172260A (en) Insulated gate field effect transistor with source field shield extending over multiple region channel
JP2638462B2 (ja) 半導体装置
US3754171A (en) An insulated gate type field effect semiconductor device having a breakdown preventing element
US3602782A (en) Conductor-insulator-semiconductor fieldeffect transistor with semiconductor layer embedded in dielectric underneath interconnection layer
US4963970A (en) Vertical MOSFET device having protector
EP0479504A2 (en) Thin film transistor
JPH0463546B2 (enrdf_load_html_response)
US3363152A (en) Semiconductor devices with low leakage current across junction
US5227327A (en) Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits
US4922316A (en) Infant protection device
JPS6237550B2 (enrdf_load_html_response)
US3936862A (en) MISFET and method of manufacture
JPH0379874B2 (enrdf_load_html_response)
GB2183908A (en) Protective network
JPH0468576A (ja) 半導体装置
JPH07147384A (ja) 半導体装置
JPH01185974A (ja) Ｍｉｓ−ｆｅｔ
JPS6015338Y2 (ja) 半導体装置
JP3119914B2 (ja) 半導体装置
JPH0237112B2 (enrdf_load_html_response)
US5432369A (en) Input/output protection circuit
JPH0563191A (ja) 半導体装置
JPH035069B2 (enrdf_load_html_response)