JPS6236878A - Manufacture of photovoltaic device - Google Patents
Manufacture of photovoltaic deviceInfo
- Publication number
- JPS6236878A JPS6236878A JP60176542A JP17654285A JPS6236878A JP S6236878 A JPS6236878 A JP S6236878A JP 60176542 A JP60176542 A JP 60176542A JP 17654285 A JP17654285 A JP 17654285A JP S6236878 A JPS6236878 A JP S6236878A
- Authority
- JP
- Japan
- Prior art keywords
- type layer
- layer
- type
- gas
- silicon compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 238000006243 chemical reaction Methods 0.000 claims abstract description 20
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 10
- 239000002994 raw material Substances 0.000 claims description 10
- 238000006303 photolysis reaction Methods 0.000 claims description 8
- 238000000354 decomposition reaction Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 230000015843 photosynthesis, light reaction Effects 0.000 claims description 6
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract description 10
- 239000013078 crystal Substances 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 3
- 229910007260 Si2F6 Inorganic materials 0.000 abstract 1
- 229910007264 Si2H6 Inorganic materials 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- SDNBGJALFMSQER-UHFFFAOYSA-N trifluoro(trifluorosilyl)silane Chemical compound F[Si](F)(F)[Si](F)(F)F SDNBGJALFMSQER-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 60
- 239000010408 film Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000010248 power generation Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】 （イ）産業上の利用分野 される。[Detailed description of the invention] (b) Industrial application fields be done.
（ロ）従来技術
この種光起電力装置の典型例として、光入射面を形成す
るガラス基板の背面側に順次透明電極、ｐｉｎ接合型半
導体層及び金属裏面電極ダ積層したものが存在Ｉ７、例
えば特開昭５７−９５６７７号公報にあっては、上記ｐ
ｉｎ接合型半導体層と１５てシリコン化合物ガスのプラ
ズマ分解により得られる非晶質シリコン（ａ−５ｉ）を
用いること、更には光入射側のｐ型層として非晶質シリ
コンカーバイド（ａ−５ｉＣ）を用いることを提案して
いる。即ち、従来の非晶質シリコンのｐ型層に代って非
晶質シリコンカーバイドを用いることにより斯るｐ型層
に於ける光吸収損失を減少させる所謂窓効果を得、発電
に寄り−するｉ型層への光照側量を増大さゼ光電変換効
率の上昇を図っている。(B) Prior Art A typical example of this type of photovoltaic device is one in which a transparent electrode, a pin junction type semiconductor layer, and a metal back electrode are sequentially laminated on the back side of a glass substrate forming a light incident surface. In JP-A No. 57-95677, the above p.
Amorphous silicon (a-5i) obtained by plasma decomposition of silicon compound gas is used as the in-junction semiconductor layer 15, and amorphous silicon carbide (a-5iC) is used as the p-type layer on the light incident side. It is proposed to use . That is, by using amorphous silicon carbide in place of the conventional p-type layer of amorphous silicon, a so-called window effect is obtained that reduces light absorption loss in the p-type layer, which improves power generation. The aim is to increase the photoelectric conversion efficiency by increasing the amount of light that enters the i-type layer.
この様に非晶質シリコンカーバイドをｐ型層に用いるこ
とにより該ｐ型層に於ける光吸収は減少するものの、未
だｐ型層及びまたはｎ型層は発電に寄与していないのが
実情である。Although light absorption in the p-type layer is reduced by using amorphous silicon carbide for the p-type layer, the reality is that the p-type layer and/or the n-type layer still do not contribute to power generation. be.
（ハ）発明が解決しようとする問題点
本発明は上述の如く未だｐ型層及びまたはｎ型層が発電
に寄与していない点を解決しようとするものである。(c) Problems to be Solved by the Invention The present invention attempts to solve the above-mentioned problem that the p-type layer and/or the n-type layer do not yet contribute to power generation.
（ニ）問題点を解決するための手段
本発明は上記問題点を解決すべく、ｐ型層及びまたはｎ
型層をシリコン化合物ガスを含む原料ガスの光分解によ
り形成すると共に、上記ｐ型層及びｎ型層よりも膜厚の
大きいｉ型層をシリコン化合物ガスを含む原料ガスのプ
ラズマ分解により形成したことを特徴とする。(d) Means for solving the problems In order to solve the above problems, the present invention provides a p-type layer and/or an n-type layer.
The mold layer is formed by photolysis of a raw material gas containing a silicon compound gas, and the i-type layer, which is thicker than the p-type layer and n-type layer, is formed by plasma decomposition of a raw material gas containing a silicon compound gas. It is characterized by
（ホ）作用
上述の６０＜ｐ型層及びまたはｎ型層を光分解により形
成することによって、良質な膜質が得られ、光電変換に
有効に作用する。(E) Effect By forming the above-mentioned 60<p-type layer and/or n-type layer by photolysis, a good film quality can be obtained and it acts effectively on photoelectric conversion.
（へ）実施例
第１図は本発明製造方法に基づいて製造された光起電力
装置であって、（１）はガラス等に代表される絶縁性月
つ透光性の支持基板、く２）は該基板（１）の−主面に
被着されたＳｎＯ２、ＩＴＯの単層或いは積層構造の受
光面電極、（３）は膜面に平行な実質的なｐｉｎ接合を
持つ全ての層が光電変換に寄与するｐｉｎ接合型光活性
層、（４）は該光活性層（３）の背面側に設けられたＡ
Ｉ！ 、 Ａｇ 、 ＡＩ！／ＴｉＡｇ 、 ＩＴＯ／
Ａ ｇ等の単層或いは積層構造の背面電極である。(f) Example FIG. 1 shows a photovoltaic device manufactured based on the manufacturing method of the present invention, in which (1) is an insulating support substrate typified by glass, etc.; ) is a light-receiving surface electrode with a single layer or laminated structure of SnO2 or ITO deposited on the -main surface of the substrate (1), and (3) is a light-receiving surface electrode with a substantial pin junction parallel to the film surface. A pin junction type photoactive layer contributing to photoelectric conversion, (4) is A provided on the back side of the photoactive layer (3).
I! , Ag, AI! /TiAg, ITO/
The back electrode has a single layer or a laminated structure such as Ag.
一ヒ記ｐｉｎ接合型光活性層（３）はｉ型層（３１）の
みならず全ての層、即ち受光面電極（２）側から見て、
ｐ型層（３ｐ）、ｉ型層（３１〉及びｎ型層（３ｎ）が
有効に光電変換動作すへく、ｐ型層（３ｐ）及びｎ型層
（３ｎ）は５ｉＨ＋、Ｓｉ、Ｈ，、Ｓｉ＊Ｆｓ等のシリ
コン化合物ガスに価電子制御用のＢ、）１．、ＰＲ，の
如きドーピングガスを適宜含む原料ガスの光分解く光Ｃ
ＶＤ法）により形成された微結晶シリコンから成る。1) The pin junction type photoactive layer (3) includes not only the i-type layer (31) but also all layers, that is, viewed from the light-receiving surface electrode (2) side,
The p-type layer (3p), the i-type layer (31〉) and the n-type layer (3n) operate effectively for photoelectric conversion. , B for valence electron control in silicon compound gas such as Si*Fs,)1. , PR, photo-decomposition light C of a raw material gas containing an appropriate doping gas such as
It is made of microcrystalline silicon formed by the VD method.
原料ガスを光エネルギにより分解し、半導体薄膜を得る
光ＣＤＶ法自体は既に知られており、例えは−ト記５ｉ
ｘ）ｌａガスを光分解することにより非晶質シリコンが
得られることは第３０回応用物理学関係連合講演回予稿
集３４５頁、６Ｐ−Ａ −１７に報告されている。即ち
、光ＣＶＤ法による半導体薄膜の基本的製造方法とは、
第２図に示す如く、反応室（５）の天面を光照射窓とし
ての石英板（６）により閉本し、石英板（６）を介して
低圧水銀ランプ等の光源（７）により反応室（５）内に
紫外線を照射し、反応室（５）内に導入された原料ガス
を、上記紫外線のエネルギにより分解して反応室（５）
内の下端部にヒータ（８）によって加熱保持された支持
基板（１）上に上記原料ガスに応じた半導体薄膜が形成
される。The optical CDV method itself for obtaining a semiconductor thin film by decomposing a raw material gas with light energy is already known.
x) The fact that amorphous silicon can be obtained by photolyzing La gas is reported in the proceedings of the 30th Applied Physics Conference, page 345, 6P-A-17. In other words, the basic method for manufacturing semiconductor thin films using the photo-CVD method is as follows:
As shown in Figure 2, the top of the reaction chamber (5) is closed with a quartz plate (6) serving as a light irradiation window, and a light source (7) such as a low-pressure mercury lamp is used for reaction through the quartz plate (6). The chamber (5) is irradiated with ultraviolet rays, and the raw material gas introduced into the reaction chamber (5) is decomposed by the energy of the ultraviolet rays to form the reaction chamber (5).
A semiconductor thin film corresponding to the raw material gas is formed on the support substrate (1) which is heated and maintained at the lower end thereof by a heater (8).
一方、ｉ型層（３１）は非晶質シリコンからなり、特公
昭５３−３７７１８号公報等に開示された如〈従来から
光！変換に寄与すべく原料ガスのプラズマ分解により一
ヒ記ｐ型層（３ｐ）及びｎ型層（３ｎ）よりも十分膜厚
が大きく形成される。斯るｉ型層（３１〉についてもｐ
型層（３ｐ）及びｎ型層〈３ｎ）と同様に光分解により
製造可能であるものの、光分解は紫外線を反応室（５〉
に照射せしめる石英板（６）の内面に膜が付着し、それ
が入射光である上記紫外光を吸収してしまうために、膜
厚が大きいｉ型Ｊｉ！ （３ｉ）の製造には多大な時間
を必要とし、工業的には不向きである。On the other hand, the i-type layer (31) is made of amorphous silicon, and as disclosed in Japanese Patent Publication No. 53-37718, etc. In order to contribute to the conversion, a film thickness sufficiently larger than that of the p-type layer (3p) and n-type layer (3n) described above is formed by plasma decomposition of the source gas. For such an i-type layer (31〉, p
Like the type layer (3p) and n-type layer (3n), it can be produced by photolysis, but photolysis requires ultraviolet rays to be applied to the reaction chamber (5).
A film adheres to the inner surface of the quartz plate (6) that is irradiated to the i-type Ji! The production of (3i) requires a lot of time and is not suitable for industrial use.
〈以下余白）
＝４−
下表に上記ｐｉｎ接合型光活性層（３〉の基本的的反応
条件を記す。(The following is a blank space) =4- The basic reaction conditions for the pin junction type photoactive layer (3) are listed in the table below.
斯る反応条件により製造されたｐｉｎ接合型光活性層（
３）を備えた光起電力装置の光電変換効率を評価すべく
出力電流（１）−出力電圧（Ｖ）特性をソーラシュレー
タＡＭ−１，１００ｍＷ／ｃｍ２により測定したところ
第３図に於いて曲線（Ａ）の結果を得た。A pin junction type photoactive layer (
In order to evaluate the photoelectric conversion efficiency of the photovoltaic device equipped with 3), the output current (1) - output voltage (V) characteristics were measured using a solar insulator AM-1, 100 mW/cm2. Curve (A) results were obtained.
一方、比較例としてｐ型Ｊｉ！ （３ｐ＞及びｎ型層（
３ｎ）ｉ型層（３１）と同じくブラスマ分解により形成
すると共に、従来の技術の項で述べた如くｐ型層 （３
ｐ）として膜厚１５０〜２００人程度の非晶質シリコン
カーバイドを使用し、その窓効果を利用した光起電力装
置のＩ−Ｖ特性を測定したところ、第３図に於いて曲線
（Ｂ）の結果を得た。On the other hand, as a comparative example, p-type Ji! (3p> and n-type layer (
3n) The i-type layer (31) is formed by plasma decomposition as well as the p-type layer (3n) as described in the prior art section.
When we measured the I-V characteristics of a photovoltaic device using the window effect using amorphous silicon carbide with a film thickness of about 150 to 200 layers as p), the curve (B) in Figure 3 was measured. The results were obtained.
この様に■−■特性に於いて、本発明実施例は比較例に
比して短絡電流Ｕｓｅ（ｍＡ／ｃｍ２）、開放電圧ｖｏ
ｃ（ｖ）の両者共に上回っていることから、ｐ型層（３
ｐ）及びｎ型層（３ｎ）がｉ型層（３１）に加えて光電
変換に有効に寄与しているもと判断される。As described above, in the ■-■ characteristics, the example of the present invention has a short circuit current Use (mA/cm2) and an open circuit voltage vo compared to the comparative example.
Since both c(v) exceeds the p-type layer (3
It is determined that the p) and n-type layers (3n) contribute effectively to photoelectric conversion in addition to the i-type layer (31).
一方、」−記反応条件により製造されたｐ型層（３ｐ）
及びｎ型層（３ｎ）は微結晶シリコンからなり、その平
均結晶粒径を測定したところ、８０人であった。そこで
、ｐｉｎ接合型光活性層８３）を形成後背面Ｍ極（４）
の形成に先立って、ｐ型層（３ｐ）及びｎ型層（３ｎ）
の両面から低圧水銀ランプより波長２５３、７ｎｍのハ
イパワーな紫外線光を照射することによって結晶粒径を
拡大し、光電変換に有効に動作すべき膜質を一層に改善
する。例えば波長２５３、７ｎｍの紫外線光を輻射する
低圧水銀ランプを集光することにより」−記紫外線光を
１００Ｗ ／ ｃｍ ２までパワーアップし、斯る１０
０Ｗ ／ ｃｍ ２の紫外線光を１０秒間照射したとこ
ろ、結晶粒径が８０人から３００人まで拡大した。そし
て、結晶粒径が拡大したｎ型層（３ｎ）の背面に背面電
極く４）を形成しＩ−Ｖ特性を測定した結果、第３図（
Ｃ）の曲線を得た。即ち、結晶粒径の拡大により膜質が
改善されｐ型層（３ｐ）及びｎ型層（３ｎ）が光電変換
に有効に寄与していることが判明した。On the other hand, the p-type layer (3p) produced under the reaction conditions
The n-type layer (3n) was made of microcrystalline silicon, and the average crystal grain size was measured to be 80. Therefore, after forming the pin junction type photoactive layer 83), the rear M pole (4)
Prior to the formation of p-type layer (3p) and n-type layer (3n)
By irradiating both sides of the film with high-power ultraviolet light with a wavelength of 253.7 nm from a low-pressure mercury lamp, the crystal grain size is expanded and the quality of the film, which must be effective for photoelectric conversion, is further improved. For example, by concentrating a low-pressure mercury lamp that emits ultraviolet light with a wavelength of 253.7 nm, the power of the ultraviolet light is increased to 100 W/cm2, and such 10
When irradiated with ultraviolet light of 0 W/cm2 for 10 seconds, the crystal grain size increased from 80 to 300. Then, a back electrode 4) was formed on the back side of the n-type layer (3n) with enlarged crystal grain size, and the IV characteristics were measured, as shown in Figure 3 (
A curve C) was obtained. That is, it was found that the film quality was improved by increasing the crystal grain size, and the p-type layer (3p) and n-type layer (3n) effectively contributed to photoelectric conversion.
尚、ＳｉＨ＊のみからなる分解により得られた非晶質シ
リコンはその原料ガス中に価電子制御用のドーピングガ
スを含まない状態であるにも拘ず、僅かながらｎ型の性
質を呈するために、本発明に於いて使用される実質的な
ｐｉｎ接合とは、ｉ型層（３１）が真のｉ型のみならず
、ノンドープな状態で製造された僅かなｎ型及びドーピ
ングガスを僅かに含む状態で製造されたｐ型も包含する
意味に於いて用いられている。Note that amorphous silicon obtained by decomposition consisting only of SiH* exhibits slight n-type properties even though its raw material gas does not contain a doping gas for controlling valence electrons. , the substantial pin junction used in the present invention means that the i-type layer (31) contains not only true i-type but also a small amount of n-type produced in a non-doped state and a slight amount of doping gas. It is used in the sense that it also includes p-type produced in the state.
（ト〉 発明の効果
本発明製造方法は以上の説明から明らかな如く、少なく
とも一つの実質的なｐｉｎ接合を形成するｐ型層及びま
たはｎ型層をシリコン化合物ガスを含む原料ガスの光分
解によって形成したので、良質な膜質の不純物層を得る
ことができ、斯る不純物層が有効に光電変換に寄与する
ことができる。(G) Effects of the Invention As is clear from the above description, the manufacturing method of the present invention forms a p-type layer and/or an n-type layer forming at least one substantial pin junction by photolysis of a raw material gas containing a silicon compound gas. As a result of this formation, an impurity layer of good film quality can be obtained, and such an impurity layer can effectively contribute to photoelectric conversion.
第１図は本発明製造方法に基づいて製造された光起電力
装置の断面図、第２図は光ＣＶＤ法を説明するための概
念図、第３図は出力電流−出力電圧特性図、を夫々示し
ている。
（１〉・・・支持基板、（３）・・・ｐｉｎ接合型光活
性層、（３ｐ〉・・・ｐ型層、（３１）・・・ｉ型層、
（３ｎ）・・・ｎ型層、（５）・・・反応室、（７）・
・・光源。Fig. 1 is a cross-sectional view of a photovoltaic device manufactured based on the manufacturing method of the present invention, Fig. 2 is a conceptual diagram for explaining the photoCVD method, and Fig. 3 is an output current-output voltage characteristic diagram. shown respectively. (1>...support substrate, (3)...pin junction type photoactive layer, (3p>...p type layer, (31)...i type layer,
(3n)...n-type layer, (5)...reaction chamber, (7)...
··light source.
Claims (1)
電力装置の製造方法であって、ｐ型層及びまたはｎ型層
はシリコン化合物ガスを含む原料ガスの光分解により形
成されると共に、上記ｐ型層及びｎ型層よりも膜厚の大
きいｉ型層はシリコン化合物ガスを含む原料ガスのプラ
ズマ分解により形成され、上記光分解により形成された
ｐ型層及びまたはｎ型層は上記ｉ型層と共に光電変換に
寄与することを特徴とした光起電力装置の製造方法。(1) A method for manufacturing a photovoltaic device including at least one substantial pin junction, wherein the p-type layer and/or the n-type layer is formed by photolysis of a raw material gas containing a silicon compound gas, and the above-mentioned The i-type layer, which is thicker than the p-type layer and the n-type layer, is formed by plasma decomposition of a raw material gas containing a silicon compound gas, and the p-type layer and/or n-type layer formed by the photodecomposition is the i-type layer. A method for manufacturing a photovoltaic device characterized by contributing to photoelectric conversion together with a layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176542A JPS6236878A (en) | 1985-08-10 | 1985-08-10 | Manufacture of photovoltaic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60176542A JPS6236878A (en) | 1985-08-10 | 1985-08-10 | Manufacture of photovoltaic device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6236878A true JPS6236878A (en) | 1987-02-17 |
Family
ID=16015409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60176542A Pending JPS6236878A (en) | 1985-08-10 | 1985-08-10 | Manufacture of photovoltaic device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6236878A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0319287A (en) * | 1989-06-15 | 1991-01-28 | Sanyo Electric Co Ltd | Photoelectric transducer |
-
1985
- 1985-08-10 JP JP60176542A patent/JPS6236878A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0319287A (en) * | 1989-06-15 | 1991-01-28 | Sanyo Electric Co Ltd | Photoelectric transducer |
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