JPS6236323B2 - - Google Patents
Info
- Publication number
- JPS6236323B2 JPS6236323B2 JP1122282A JP1122282A JPS6236323B2 JP S6236323 B2 JPS6236323 B2 JP S6236323B2 JP 1122282 A JP1122282 A JP 1122282A JP 1122282 A JP1122282 A JP 1122282A JP S6236323 B2 JPS6236323 B2 JP S6236323B2
- Authority
- JP
- Japan
- Prior art keywords
- nanbo
- oriented
- ultra
- ceramic
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000010791 quenching Methods 0.000 claims description 8
- 239000000919 ceramic Substances 0.000 claims description 7
- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000005096 rolling process Methods 0.000 claims description 3
- UYLYBEXRJGPQSH-UHFFFAOYSA-N sodium;oxido(dioxo)niobium Chemical compound [Na+].[O-][Nb](=O)=O UYLYBEXRJGPQSH-UHFFFAOYSA-N 0.000 claims description 3
- 239000004115 Sodium Silicate Substances 0.000 claims description 2
- 229910021538 borax Inorganic materials 0.000 claims description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 2
- 239000004328 sodium tetraborate Substances 0.000 claims description 2
- 235000010339 sodium tetraborate Nutrition 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 230000004907 flux Effects 0.000 claims 1
- 229910000162 sodium phosphate Inorganic materials 0.000 claims 1
- 239000001488 sodium phosphate Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims 1
- 239000010408 film Substances 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 238000002441 X-ray diffraction Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000843 powder Substances 0.000 description 5
- 230000000171 quenching effect Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 239000013081 microcrystal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002902 ferrimagnetic material Substances 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000005291 magnetic effect Effects 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Description
【発明の詳細な説明】
本発明は配向性NaNbO3成膜の製造法に関する
ものである。NaNbO3は高誘電率を示すBaTiO3と
同様のペロブスカイト型構造をとり、更に強誘電
性を示すので、誘電圧電材料として有望な素材と
なつている。一般にセラミツクス焼結体は微結晶
の集合体であり、粒界が存在し、各微結晶の結晶
軸はランダムに配列しているために、その物性は
各結晶軸の平均値を示す。酸化物誘電材料では、
結晶配向化することによつて誘電率や圧電性が大
きくなつたりまた結晶粒界の減少によつて機械的
強度が増すことが知られている。セラミツクス材
料の結晶配向化技術は工業的な観点からも最近の
重要な課題となつている。セラミツクス焼結材料
の電磁的性質に異方性をもたらす手段として、
() 磁場中での成形
() トポタキシヤル効果の利用
() ホツトプレスによる熱間加工
などがあるが、()の方法は材料が強磁性体が
フエリ磁性体である必要があり、()では出発
物質の一部が顕著な形状異方性を持つものでなけ
ればならない。また()の方法は高温で加圧す
るので、量産に適さない欠点があり、更にセラミ
ツク薄膜を作ることは困難である。その点本発明
は従来の方法とは全く異なつており誘電率などの
電気的性質を有効的にならしめるための配向性
NaNbO3成膜法である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for producing oriented NaNbO 3 films. NaNbO 3 has a perovskite structure similar to BaTiO 3 which exhibits a high dielectric constant, and also exhibits ferroelectricity, making it a promising material as a dielectric voltage material. Generally, a ceramic sintered body is an aggregate of microcrystals, grain boundaries exist, and the crystal axes of each microcrystal are arranged randomly, so that its physical properties indicate the average value of each crystal axis. In oxide dielectric materials,
It is known that crystal orientation increases dielectric constant and piezoelectricity, and mechanical strength increases by reducing crystal grain boundaries. Crystal orientation technology for ceramic materials has recently become an important issue from an industrial perspective. Methods for bringing anisotropy to the electromagnetic properties of sintered ceramic materials include () forming in a magnetic field, () utilizing the topaxial effect, and () hot working by hot pressing. The magnetic material must be a ferrimagnetic material, and in (), a part of the starting material must have significant shape anisotropy. Furthermore, since the method () requires pressurization at high temperatures, it has the disadvantage that it is not suitable for mass production, and furthermore, it is difficult to produce ceramic thin films. In this respect, the present invention is completely different from conventional methods.
This is a NaNbO 3 film formation method.
本発明の配向性NaNbO3成膜法はNaNbO3ある
いはそれに酸化ホウ素、ホウ砂、ケイ酸ナトリウ
ムなどのような融剤を若干量加えたものを白金ノ
ズル中で1300〜1700℃の温度で完全に溶融し、第
1図に示すようなゴムローラーで狭まれた2枚の
急冷板でその融体を圧延及び超急冷することによ
つて、リボン状の配向したニオブ酸ナトリウム膜
を得るものである。セラミツクス融体からの急冷
処理は、材料組成などの条件に依存するが、その
ままガラス化するか、あるいは結晶相を析出した
りするかのどちらかである。結晶化する場合でも
配向化することはまずない。本発明による結晶配
向以現象はセラミツクス融液の超急冷過程におい
て一方向凝固が行われていることに関係している
と思われる。すなわち2枚の金属急冷板に接する
成膜の表面部分はその中央部分より急冷効果が大
きく、そのために膜厚方向に温度勾配が生じ、一
方向凝固が可能となつたからである。その結果と
して成膜の垂直方向に結晶配向化すると推察され
る。 The oriented NaNbO 3 film formation method of the present invention is to completely process NaNbO 3 or a mixture of NaNbO 3 to which a small amount of a fluxing agent such as boron oxide, borax, sodium silicate, etc. is added in a platinum nozzle at a temperature of 1300 to 1700°C. A ribbon-shaped oriented sodium niobate film is obtained by melting, rolling and ultra-quenching the melt between two quenching plates sandwiched between rubber rollers as shown in Figure 1. . The rapid cooling treatment from a ceramic melt depends on conditions such as material composition, but it either vitrifies it as it is or precipitates a crystalline phase. Even if it crystallizes, it is unlikely to become oriented. The phenomenon of crystal orientation according to the present invention is thought to be related to the fact that unidirectional solidification occurs during the ultra-rapid cooling process of the ceramic melt. That is, the surface portion of the formed film in contact with the two metal quenching plates had a greater quenching effect than the central portion, which created a temperature gradient in the film thickness direction, making unidirectional solidification possible. As a result, it is presumed that crystal orientation occurs in the direction perpendicular to the film formation.
実施例として酸化ホウ素を4モル%添加した
NaNbO3粉末を白金ノズル中に1500℃、20分溶融
した後、2枚の急冷板で圧延しつつ超急冷するこ
とによつて均一性のよい配向性NaNbO3セラミツ
クス膜を得ることが出来た。無配向のNaNbO3合
成粉末と配向化したNaNbO3超急冷膜を比較する
ために、それらのX線回折パターンを第2図及び
第3図に示す。第2図は固相反応によつて得た
NaNbO3結晶粉末で、ペロブスカイト型構造に特
徴的なX線回折パターンを示している。この結晶
は室温では斜方晶に歪み、大きな単位胞で指数付
けすることが出来るが、ここでは理解しやすいよ
うに通常の単位胞で表現した。第3図は配向化し
たNaNbO3の超急冷膜のX線回折パターンで、合
成粉末の場合と同じX線回折条件で自動記録した
ものである。第2図及び第3図は比較から
{00l}面に配向化したNaNbO3膜であることは明
らかである。 As an example, 4 mol% of boron oxide was added.
By melting NaNbO 3 powder in a platinum nozzle at 1500°C for 20 minutes and then ultra-quenching it while rolling it with two quenching plates, we were able to obtain an oriented NaNbO 3 ceramic film with good uniformity. In order to compare the non-oriented NaNbO 3 synthetic powder and the oriented NaNbO 3 ultra-quenched film, their X-ray diffraction patterns are shown in FIGS. 2 and 3. Figure 2 was obtained by solid phase reaction.
It is a NaNbO 3 crystal powder and shows an X-ray diffraction pattern characteristic of a perovskite structure. This crystal is distorted into an orthorhombic crystal at room temperature and can be indexed using a large unit cell, but here we have expressed it using an ordinary unit cell for ease of understanding. Figure 3 shows the X-ray diffraction pattern of an ultra-quenched oriented NaNbO 3 film, automatically recorded under the same X-ray diffraction conditions as for the synthetic powder. From comparison, it is clear that FIGS. 2 and 3 are NaNbO 3 films oriented in the {00l} plane.
第1図は本発明を実施した際に用いた超急冷装
置の概略図である。図中の各番号の説明はつぎの
通りである。
1……白金ノズル(外径8mm、内径6mm、長さ
100mm)、2……電気炉(炭化ケイ素発熱体)、3
……金属板(ステンレス製)、4……ゴムローラ
ー、5……ワイヤロープ、6……巻取機、7……
モーター(クラツチ・ブレーキ付)。
第2図は、NaNbO3粉末のX線回折パターン
で、配向性試料と比較のために示した。第3図は
本発明により得た配向性NaNbO3超急冷膜のX線
回折パターンである。なお第2図および第3図の
X線回折パターンは対陰極として銅を用いて自動
記録した。
FIG. 1 is a schematic diagram of an ultra-quenching apparatus used in carrying out the present invention. The explanation of each number in the figure is as follows. 1...Platinum nozzle (outer diameter 8 mm, inner diameter 6 mm, length
100mm), 2...Electric furnace (silicon carbide heating element), 3
... Metal plate (stainless steel), 4 ... Rubber roller, 5 ... Wire rope, 6 ... Winding machine, 7 ...
Motor (with clutch and brake). FIG. 2 is an X-ray diffraction pattern of NaNbO 3 powder, shown for comparison with an oriented sample. FIG. 3 is an X-ray diffraction pattern of the oriented NaNbO 3 ultra-quenched film obtained according to the present invention. The X-ray diffraction patterns shown in FIGS. 2 and 3 were automatically recorded using copper as an anticathode.
Claims (1)
れに融剤として酸化ホウ素、ホウ砂、リン酸ソー
ダ類、ケイ酸ナトリウムなどを若干量加えて、完
全に溶融し、そのセラミツク融液を2枚の金属急
冷板の間に落下させ、瞬間的に圧延しつつ超急冷
することを特徴とする薄膜状の配向性ニオブ酸ナ
トリウムセラミツクスの製造法。1. Add a small amount of sodium niobate (NaNbO 3 ) or a flux such as boron oxide, borax, sodium phosphate, or sodium silicate to it, melt it completely, and pour the ceramic melt between two metal quench plates. A method for producing oriented sodium niobate ceramics in the form of a thin film, which is characterized by dropping the ceramic material onto a substrate, instantaneously rolling it, and ultra-quenching it.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57011222A JPS58165208A (en) | 1982-01-27 | 1982-01-27 | Method of producing orientation sodium niobate |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57011222A JPS58165208A (en) | 1982-01-27 | 1982-01-27 | Method of producing orientation sodium niobate |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58165208A JPS58165208A (en) | 1983-09-30 |
JPS6236323B2 true JPS6236323B2 (en) | 1987-08-06 |
Family
ID=11771929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57011222A Granted JPS58165208A (en) | 1982-01-27 | 1982-01-27 | Method of producing orientation sodium niobate |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58165208A (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6692652B2 (en) * | 2001-04-23 | 2004-02-17 | Kabushiki Kaisha Toyota Chuo Kenkyusho | Grain oriented ceramics |
-
1982
- 1982-01-27 JP JP57011222A patent/JPS58165208A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS58165208A (en) | 1983-09-30 |
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