JPS6235604A - Magnetically soft thin film - Google Patents

Magnetically soft thin film

Info

Publication number
JPS6235604A
JPS6235604A JP17428185A JP17428185A JPS6235604A JP S6235604 A JPS6235604 A JP S6235604A JP 17428185 A JP17428185 A JP 17428185A JP 17428185 A JP17428185 A JP 17428185A JP S6235604 A JPS6235604 A JP S6235604A
Authority
JP
Japan
Prior art keywords
thin film
magnetic
magnetic thin
film
nitrogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17428185A
Other languages
Japanese (ja)
Other versions
JPH0626167B2 (en
Inventor
Tatsuo Hisamura
達雄 久村
Akira Urai
浦井 彰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP17428185A priority Critical patent/JPH0626167B2/en
Publication of JPS6235604A publication Critical patent/JPS6235604A/en
Publication of JPH0626167B2 publication Critical patent/JPH0626167B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00Thin magnetic films, e.g. of one-domain structure
    • H01F10/32Spin-exchange-coupled multilayers, e.g. nanostructured superlattices

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Thin Magnetic Films (AREA)

Abstract

PURPOSE:To contrive accomplishment of the state of low magnetic coercive force and the high degree of permeability which can not be attained in a single layer film by a method wherein an Fe-Al-Si magnetic thin film and an Fe-Al-Si magnetic thin film containing nitrogen are alternately laminated. CONSTITUTION:A magnetic thin film 3, containing Fe-Al-Si as the main component and having the compositional range of Al of 2-10wt% and Si of 4-15wt%, and a magnetic thin film 2 containing Fe, Al and Si as the main component and having the compositional range of Al of 2-10wt%, Si of 4-15wt% and nitrogen of 0.005-4wt%, are laminated on a substrate 1. The compositional range of Al content of 2-10wt%, Si content of 4-15wt%, and Fe for the remaining wt% is considered suitable for the Fe-Al-Si magnetic thin film 3 containing no nitrogen. As a result, the magnetic coercive force of the title soft magnetic thin film can be attenuated, and its permeability can be improved sharply.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、磁気ヘッドのコア材等として使用される軟磁
性薄膜に関するものであり、特にFe。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a soft magnetic thin film used as a core material of a magnetic head, and particularly to a soft magnetic thin film made of Fe.

AA、Siを主成分とする軟磁性薄膜の磁気特性〔発明
の概要〕 本発明は、Fe−Al−3i系合金材料からなる軟磁性
薄膜において、 Fe−A6−3t系磁性薄膜と窒素を含有するFe−A
l−3i系磁性薄膜とを交互に積層することにより、 単層膜では実現されない低保磁力化、高透磁率化を図ろ
うとするものである。
Magnetic properties of a soft magnetic thin film mainly composed of AA and Si [Summary of the Invention] The present invention provides a soft magnetic thin film made of an Fe-Al-3i alloy material containing a Fe-A6-3t magnetic thin film and nitrogen. Fe-A
By alternately laminating l-3i magnetic thin films, it is possible to achieve low coercive force and high magnetic permeability, which cannot be achieved with a single layer film.

〔従来の技術〕[Conventional technology]

例えばVTR(ビデオテープレコーダ)等の磁気記録再
生装置においては、記録信号の高密度化や高周波数化等
が進められており、この高密度記録化に対応して、磁気
記録媒体として磁性粉にFe、Co、Ni等の強磁性金
属の粉末を用いた、いわゆるメタルテープや、強磁性金
属材料を蒸着法等の手法によりベースフィルム上に被着
した、いわゆる蒸着テープ等が実用化されつつある。
For example, in magnetic recording and reproducing devices such as VTRs (video tape recorders), the recording signal density and frequency are increasing, and in response to this higher density recording, magnetic powder is being used as a magnetic recording medium. So-called metal tapes using powder of ferromagnetic metals such as Fe, Co, and Ni, and so-called vapor-deposited tapes in which ferromagnetic metal materials are deposited on a base film using methods such as vapor deposition, are being put into practical use. .

この種の磁気記録媒体は高い抗磁力を有するので、記録
再生に用いる磁気ヘッドのヘッド材料には、高飽和磁束
密度を有することが要求される。
Since this type of magnetic recording medium has a high coercive force, the head material of the magnetic head used for recording and reproduction is required to have a high saturation magnetic flux density.

例えば、従来ヘッド材料として多用されているフェライ
ト材では、飽和磁束密度が低く、この高抗磁力化に対処
しきれない。
For example, ferrite materials, which are conventionally widely used as head materials, have a low saturation magnetic flux density and cannot cope with this increase in coercive force.

そこで従来、これら高抗磁力磁気記録媒体に対応するた
めに、セラミックス等の非磁性の基板やフェライト等の
磁性基板上に高飽和磁束密度を有する軟磁性薄膜を被着
し、これら軟磁性薄膜同士を突き合わせて磁気ギャップ
を構成するようにした複合型の磁気ヘッドや、軟磁性薄
膜や導体薄膜を絶縁膜を介して多層積層構造とした薄膜
磁気ヘッド等が提案されている。
Conventionally, in order to support these high coercive force magnetic recording media, soft magnetic thin films with high saturation magnetic flux density are deposited on non-magnetic substrates such as ceramics or magnetic substrates such as ferrite, and these soft magnetic thin films are bonded to each other. Composite magnetic heads in which a magnetic gap is formed by abutting magnetic heads, and thin film magnetic heads in which soft magnetic thin films or conductive thin films are stacked in a multilayer structure with an insulating film interposed therebetween have been proposed.

上記複合型の磁気ヘッドや薄膜磁気ヘッドに用いられる
軟磁性薄膜としては、熱的に安定で、かつ高飽和磁束密
度を有するFe−All−3t系磁性薄膜が知られてい
る。
As a soft magnetic thin film used in the above-mentioned composite type magnetic head or thin film magnetic head, a Fe-All-3t based magnetic thin film which is thermally stable and has a high saturation magnetic flux density is known.

ところで、通常、スパッタリング法により作製されたF
e−All−3i系磁性薄膜は、膜形成時の相転移や柱
状成長、及び下地基板との熱膨張の相違等により、膜内
に大きな異方性や内部応力を有し、軟磁気特性が阻害さ
れる。例えば、スパッタリング法により形成されたFe
−All−3i系磁性薄膜の場合、その保磁力はバルク
のものに較べて一層近く大きい。特に、斜め方向からス
パッタリングした膜では、斜入射効果による柱状構造の
形成が顕著であるため磁気特性の低下は著しい。
By the way, F produced by sputtering method is usually
e-All-3i magnetic thin films have large anisotropy and internal stress within the film due to phase transition and columnar growth during film formation, and differences in thermal expansion with the underlying substrate, resulting in poor soft magnetic properties. inhibited. For example, Fe formed by sputtering method
- In the case of the All-3i magnetic thin film, its coercive force is nearly larger than that of the bulk. In particular, in a film sputtered from an oblique direction, the formation of a columnar structure due to the oblique incidence effect is significant, so that the magnetic properties are significantly deteriorated.

このように保磁力が大きいと、たとえばメタルテープ等
の磁気記録媒体に記録するために大きな磁界をかけたと
きに、コア材であるFe−Aj2−3i系磁性薄膜が帯
磁してしまう虞れがある。したがって、磁気ヘッドの特
性向上のためには、この保磁力を含め、さらに軟磁性薄
膜の磁気特性の改善を図る必要がある。
If the coercive force is large in this way, there is a risk that the Fe-Aj2-3i magnetic thin film, which is the core material, may become magnetized when a large magnetic field is applied to record on a magnetic recording medium such as a metal tape. be. Therefore, in order to improve the characteristics of the magnetic head, it is necessary to further improve the magnetic characteristics of the soft magnetic thin film, including this coercive force.

上記軟磁性薄膜の保磁力を改善するための方法としては
、従来、磁性体層と非磁性体層とを積層する方法がある
A conventional method for improving the coercive force of the soft magnetic thin film is to laminate a magnetic layer and a nonmagnetic layer.

しかしながら、上述の磁性体層と非磁性体層とを積層し
た軟磁性膜でも、保磁力の抑制には限度があり、また、
全く異なる材料を積層するので積層方法も煩雑である。
However, even with the above-mentioned soft magnetic film in which a magnetic layer and a non-magnetic layer are laminated, there is a limit to the suppression of coercive force.
Since completely different materials are laminated, the lamination method is also complicated.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

上述の従来技術の記載からも明らかなように、高飽和磁
束密度を有する軟磁性薄膜においては、保磁力、透磁率
等の一層の改善が要望されている。
As is clear from the description of the prior art described above, further improvements in coercive force, magnetic permeability, etc. are desired in soft magnetic thin films having high saturation magnetic flux density.

かかる状況に鑑み、本発明は、保磁力が掻めて小さく、
高透磁率を有する軟磁性薄膜を提供することを目的とす
る。
In view of this situation, the present invention has a very small coercive force,
The object is to provide a soft magnetic thin film having high magnetic permeability.

C問題点を解決するための手段〕 本発明者等は、上述の目的を達成せんものと鋭意研究の
結果、Fe−Al−3i系磁性薄膜と窒素を含有するF
e−A/−3t系磁性薄膜とを積層すると保磁力の抑制
、透磁率の向上等に有効であることを見出し本発明を完
成するに至ったものであって、Fe、ACStを主成分
とし上記Al及びSiの組成範囲がそれぞれ2〜10重
量%/l、4〜15重量%Siである磁性薄膜と、F組
成範囲がそれぞれ2〜10重量%/M!、  4〜15
重量%Stであって、さらにO,OO5〜4重量%の窒
素を含有する磁性薄膜とを積層したことを特徴とするも
のである。
Means for Solving Problem C] As a result of intensive research, the present inventors determined that the above-mentioned objective could not be achieved.
The present invention was completed by discovering that laminating e-A/-3t based magnetic thin films is effective in suppressing coercive force and improving magnetic permeability. The above magnetic thin film has a composition range of Al and Si of 2 to 10 wt%/l and 4 to 15 wt% Si, respectively, and a composition range of F of 2 to 10 wt%/M, respectively! , 4-15
It is characterized by laminating a magnetic thin film containing 5% to 4% by weight of St and further 5 to 4% by weight of O, OO and nitrogen.

本発明において、窒素を含有しないFe−A7!−3t
系磁性薄膜に含まれるFe、An、Siの組成範囲とし
ては、Allの含有量が2〜10重量%、Siの含有量
が4〜15重量%、残部がFeであることが好ましい。
In the present invention, Fe-A7! does not contain nitrogen! -3t
The composition range of Fe, An, and Si contained in the system magnetic thin film is preferably such that the content of All is 2 to 10% by weight, the content of Si is 4 to 15% by weight, and the balance is Fe.

すなわち、上記Fe−Alt−3t系磁性薄膜を Fee A1.b S 1c (a、b、cは各成分の重量比を表す。)としたときに
、その組成範囲が 70≦a≦95 2≦b≦lO 4≦C≦15 a+b+c=100 であることが望ましい。上記AffやSiが少なすぎて
も、また逆に多すぎても磁気特性が劣化してまた、上記
Feの一部をCoあるいはNiのうち少なくとも一種と
置換することも可能である。
That is, the above Fe-Alt-3t based magnetic thin film was subjected to Fee A1. b S 1c (a, b, c represent the weight ratio of each component), the composition range is 70≦a≦95 2≦b≦lO 4≦C≦15 a+b+c=100 desirable. If the amount of Aff or Si is too small or too large, the magnetic properties will deteriorate, and it is also possible to replace a part of the Fe with at least one of Co or Ni.

上記Feの一部をCoと置換することにより、飽和磁束
密度を上げることができる。特に、Feの40重量%を
Coで置換したもので最大の飽和磁束密度が得られる。
By replacing a portion of the Fe with Co, the saturation magnetic flux density can be increased. In particular, the maximum saturation magnetic flux density can be obtained by replacing 40% by weight of Fe with Co.

このCoの置換量としては、Feに対して0〜60重量
%の範囲内とすることが好ましい。
The amount of Co substituted is preferably in the range of 0 to 60% by weight based on Fe.

同様に、上記Feの一部をNiと置換することにより、
飽和磁束密度を減少することなく透磁率を高い状態に保
つことができる。このNiの置換量としては、Feに対
して0〜40重量%の範囲内であることが好ましい。
Similarly, by replacing part of the Fe with Ni,
Magnetic permeability can be kept high without reducing saturation magnetic flux density. The amount of Ni substituted is preferably in the range of 0 to 40% by weight based on Fe.

さらに、上述のFe−A7!−3t系磁性薄膜には、耐
蝕性や耐摩耗性を改善するために各種元素を添加剤とし
て加えてもよい。上記添加剤として使用される元素とし
ては、Sc、Y、La、Ce。
Furthermore, the above-mentioned Fe-A7! Various elements may be added to the -3t magnetic thin film as additives in order to improve corrosion resistance and wear resistance. Elements used as the additives include Sc, Y, La, and Ce.

Nd、Gd等のランタン系列元素を含むma族元素、T
i、Zr、Hf等の■a族元素、V、 Nb。
Ma group elements including lanthanum series elements such as Nd and Gd, T
■A group elements such as i, Zr, Hf, V, Nb.

Ta等のVa族元素、Cr、Mo、W等のVla族元素
、Mn、Tc、Re等の■a族元素、Cu。
Va group elements such as Ta, Vla group elements such as Cr, Mo, and W, ■a group elements such as Mn, Tc, and Re, and Cu.

Ag、Au等のIb族元素、Qa、In、Ge。Group Ib elements such as Ag and Au, Qa, In, and Ge.

Sn、Sb等が挙げられる。これら添加剤の1種または
2種以上を組み合わせて、0〜10重量%の範囲で添加
する。すなわち、上記添加剤をTとし、Fe−A!−3
t系磁性薄膜を F ea A Ah S 1 c Ta(a、b、c、
dは各成分の重量比を表す。)としたときに、その組成
範囲が 65≦a≦95 2≦b≦10 4≦C≦15 0≦d≦10 a+b+c+d=100 を満足することが望ましい。上記添加剤の添加量が10
重量%を越えると磁気特性を劣化してしまう虞れがある
Examples include Sn and Sb. One or a combination of two or more of these additives is added in an amount of 0 to 10% by weight. That is, if the above additive is T, Fe-A! -3
The t-based magnetic thin film is F ea A Ah S 1 c Ta (a, b, c,
d represents the weight ratio of each component. ), it is desirable that the composition range satisfies the following: 65≦a≦95 2≦b≦10 4≦C≦15 0≦d≦10 a+b+c+d=100. The amount of the above additive added is 10
If the content exceeds % by weight, there is a risk that the magnetic properties will be deteriorated.

あるいは、上記添加剤としてRu、Rh、Pd。Alternatively, Ru, Rh, Pd as the above additives.

Qs、Ir、Pt等の白金族元素を1種以上添加しても
よい。この場合、上記白金族元素の添加量としでは40
重量%以下であることが好ましい。
One or more platinum group elements such as Qs, Ir, and Pt may be added. In this case, the amount of the platinum group element added is 40
It is preferably less than % by weight.

この添加量が40重量%を越えると磁気特性を劣化して
しまう虞れがある。
If the amount added exceeds 40% by weight, there is a risk that the magnetic properties will deteriorate.

さらに、前述のma族元素、IVaVa族元素添加剤と
、上記白金族元素の両者を添加することも可能である。
Furthermore, it is also possible to add both the above-mentioned Ma group element and IVaVa group element additives and the above-mentioned platinum group element.

この場合の組成範囲としては、上記I[Ia族元素、r
Va族元素等の添加剤をT、上記白金族元素をPとし、
Fe−Al!、−3i系磁性薄膜を F em  Alb  S  Ic  T4  P@(
a、b、c、d、eは各成分の重量比を表す。)とした
ときに、その組成範囲が 55≦a≦95 2≦b≦10 4≦C≦15 0≦d≦10 0≦e≦40 a+b+c+d+e=100 を満足することが好ましく、さらに上記白金族元Rh、
Pdを使用したときにはd+e≦20.上記白金族元素
として第6周期の白金族元素、すなわちOs、Ir、P
tを使用したときにはd+e≦40であることが望まし
い。上述の範囲を越える添加剤を添加すると、磁気特性
が劣化する虞れがある。
In this case, the composition range is as follows: I [Ia group elements, r
Additives such as Va group elements are T, the platinum group elements are P,
Fe-Al! , -3i-based magnetic thin film as Fem Alb S Ic T4 P@(
a, b, c, d, and e represent the weight ratio of each component. ), it is preferable that the composition range satisfies the following: 55≦a≦95 2≦b≦10 4≦C≦15 0≦d≦10 0≦e≦40 a+b+c+d+e=100 Rh,
When Pd is used, d+e≦20. The above-mentioned platinum group elements include platinum group elements of the 6th period, namely Os, Ir, and P.
When using t, it is desirable that d+e≦40. If additives exceeding the above range are added, there is a risk that the magnetic properties will deteriorate.

一方、上記磁性薄膜と積層される窒素を含有するFe−
An!−3i系磁性11膜に含まれるAN。
On the other hand, nitrogen-containing Fe-
An! -AN contained in the 3i-based magnetic 11 film.

Si及びその他の添加剤の組成範囲としては、上述のF
e−A7!−3i系磁性薄膜と同様であるが、さらに加
えて窒素をO,OO5〜4重量%含有することが必要で
ある。
The composition range of Si and other additives is as follows:
e-A7! Although it is similar to the -3i magnetic thin film, it is necessary to additionally contain nitrogen in an amount of 5 to 4% by weight of O, OO.

したがって、この窒素を含有する磁性薄膜をF eh 
A11b S jc Nt (a、b、c、fは各成分の重量比を表す。)としたと
きには、その組成範囲は 70≦a≦95 2≦b≦10 4≦C≦15 2+b+c+f=100 であり、 F ex A l!b S ! c Ta Nt(a、
b、c、d、fは各成分の重量比を表し、Tは添加剤を
表す。) としたときには、その組成範囲は 65≦a≦95 2≦b≦10 4≦C≦15 0≦d≦10 0.005≦f≦4 a+b+c+a+f=100 さらに、 Fe、AffbS ic T、P、Nf(a、b、c、
d、e、fは各成分の重量比を表し、Tは添加剤、Pは
白金族元素をそれぞれ表す、)としたときには、その組
成範囲は 55≦a≦95 2≦b≦10 4≦C≦15 0≦d≦ 10 0≦e≦40 0.005 ≦f≦4 a+b+c+d+e+f=100 である。
Therefore, this nitrogen-containing magnetic thin film is F eh
When A11b S jc Nt (a, b, c, f represent the weight ratio of each component), the composition range is 70≦a≦95 2≦b≦10 4≦C≦15 2+b+c+f=100 , F ex Al! bS! c Ta Nt(a,
b, c, d, f represent the weight ratio of each component, and T represents an additive. ), the composition range is 65≦a≦95 2≦b≦10 4≦C≦15 0≦d≦10 0.005≦f≦4 a+b+c+a+f=100 Furthermore, Fe, AffbS ic T, P, Nf (a, b, c,
d, e, f represent the weight ratio of each component, T represents an additive, P represents a platinum group element, respectively), the composition range is 55≦a≦95 2≦b≦10 4≦C ≦15 0≦d≦10 0≦e≦40 0.005≦f≦4 a+b+c+d+e+f=100.

これらFe−A6−3t系磁性薄膜(以下、主センダス
ト膜とする。)と窒素を含有するFe−A7!−Si系
磁性薄膜(以下、中間膜とする。)とを積層する方法と
しては、通常のアルゴンガス雰囲気中でのスパッタリン
グと、窒素ガスを含むアルゴンガス雰囲気中での反応ス
パッタリングを繰り返し行えばよい。すなわち、例にば
、先ず基板上に膜中の窒素含有量が0.005〜4重量
%となるように混入されたAr+N、ガス雰囲気中でF
e−A7!−3i系磁性材料をスパッタさせ、規定の膜
厚に達したところで雰囲気ガスをアルゴンで置換しスパ
ッタを続ける。このとき、例えばシャッタを閉じてスパ
ッタによる付着を中断した方が作製された膜の柱状晶分
断ははっきりするが、特にスパッタを中断させなくとも
よい。この操作を連続的に所望の回数繰り返して積層膜
を構成する。
These Fe-A6-3t magnetic thin films (hereinafter referred to as main sendust films) and Fe-A7! containing nitrogen! -Si-based magnetic thin film (hereinafter referred to as intermediate film) can be laminated by repeating sputtering in a normal argon gas atmosphere and reactive sputtering in an argon gas atmosphere containing nitrogen gas. . That is, for example, first, Ar+N is mixed onto a substrate so that the nitrogen content in the film is 0.005 to 4% by weight, and then F is mixed in a gas atmosphere.
e-A7! -3i-based magnetic material is sputtered, and when a specified film thickness is reached, the atmospheric gas is replaced with argon and sputtering is continued. At this time, for example, if the shutter is closed and sputtering adhesion is interrupted, the columnar crystal divisions in the produced film will become clearer, but it is not necessary to interrupt sputtering. This operation is continuously repeated a desired number of times to form a laminated film.

上記積層膜において、中間膜の厚さは30〜2000人
が好ましく、膜厚が30人未満では窒素の拡散により積
層化の効果が現れず、2000人を越えると主センダス
ト膜−中間膜の磁気的結合が微弱で磁気特性の改善が不
充分なものとなる。
In the above laminated film, the thickness of the intermediate film is preferably 30 to 2,000. If the film thickness is less than 30, the effect of lamination will not appear due to nitrogen diffusion, and if it exceeds 2,000, the magnetic field between the main sendust film and the intermediate film The magnetic coupling is weak and the improvement in magnetic properties is insufficient.

一方、主センダスト膜の膜厚は、100人〜5μmの範
囲であることが好ましく、この膜厚が100人未満では
効果が乏しく、逆に膜厚が5μmを越えると密着性が低
下する。ただし、密着性向上のためにCr等の下地膜を
付加することにより、膜厚30μmまで可能となる。
On the other hand, the thickness of the main sendust film is preferably in the range of 100 to 5 μm; if the thickness is less than 100 μm, the effect will be poor, and if the thickness exceeds 5 μm, the adhesion will decrease. However, by adding a base film such as Cr to improve adhesion, the film thickness can be increased to 30 μm.

また、上記主センダスト膜と中間膜の積層数としては、
1層以上、数百層、数千層まで可能であるが、一般には
数十層までが現実的である。。
In addition, the number of laminated layers of the main Sendust film and intermediate film is as follows:
Although it is possible to have one or more layers, hundreds of layers, or even several thousand layers, it is generally practical to have up to several tens of layers. .

〔作用〕[Effect]

Fe−Al1−3t系磁性薄膜に窒素を含有するさせた
積層構造とすることにより、Fe−An−3i系磁性薄
膜に見られた柱状成長が分断、緩和され、膜に蓄積され
る歪が分散されるとともに、Fe−Al−3i系磁性薄
膜−窒素を含有するFe−Al2−3i系磁性薄膜間で
の有益な磁気結合も加わり、保磁力は減少し、透磁率は
増加する。
By creating a laminated structure in which the Fe-Al1-3t magnetic thin film contains nitrogen, the columnar growth observed in the Fe-An-3i magnetic thin film is disrupted and relaxed, and the strain accumulated in the film is dispersed. At the same time, beneficial magnetic coupling between the Fe-Al-3i magnetic thin film and the nitrogen-containing Fe-Al2-3i magnetic thin film is also added, and the coercive force decreases and the magnetic permeability increases.

〔実施例〕〔Example〕

以下、本発明の具体的な実施例について説明するが、本
発明がこれら実施例に限定されるものではない。
Hereinafter, specific examples of the present invention will be described, but the present invention is not limited to these examples.

実施例1゜ F eszA Z? S i 11合金(組成は重量比
)をターゲットとして用い、2元スパッタ装置により下
記のスバフタ条件にしたがってアルゴンガス雰囲気中及
び窒素ガスを含有するアルゴンガス雰囲気中でスパッタ
リングを行い、第1図に示すように、円板状の結晶化ガ
ラス基板(1)上に窒素を含有すAj!−3i系磁性薄
膜(3)をそれぞれ5層ずつ積層した後、550℃で1
時間熱処理して軟磁性薄膜とした。なお、この軟磁性薄
膜全体の膜厚は5μmとし、最下層に被着される磁性薄
膜(2a)の膜厚は500人とした。
Example 1゜F eszA Z? Using S i 11 alloy (composition by weight) as a target, sputtering was performed in an argon gas atmosphere and in an argon gas atmosphere containing nitrogen gas using a binary sputtering device according to the following subafuta conditions, as shown in Fig. 1. As shown, Aj! containing nitrogen on a disk-shaped crystallized glass substrate (1). - After laminating five layers of each 3i-based magnetic thin film (3),
A soft magnetic thin film was obtained by heat treatment for a period of time. The thickness of the entire soft magnetic thin film was 5 μm, and the thickness of the magnetic thin film (2a) deposited as the bottom layer was 500.

スパッタ条件 RFパワー        100W ターゲツト・基板間距離  301m 基板温度        〜20℃(水冷)到達真空度
     3 X 10−”Torrガス圧力    
  4 x 10−’Torr上記スパッタ条件に従い
、中間層となる磁性薄膜(2b)の膜厚を第1表に示す
ように変え、軟磁性薄膜を形成した。得られた各軟磁性
薄膜の保磁力)(cおよびIMHzでの透磁率μを測定
した。結果を第1表に示す。
Sputtering conditions RF power: 100 W Target-substrate distance: 301 m Substrate temperature: ~20°C (water cooling) Ultimate vacuum: 3 x 10-” Torr Gas pressure
4 x 10-'Torr According to the above sputtering conditions, the thickness of the magnetic thin film (2b) serving as the intermediate layer was changed as shown in Table 1, and a soft magnetic thin film was formed. The coercive force (c) and magnetic permeability μ at IMHz of each of the obtained soft magnetic thin films were measured. The results are shown in Table 1.

なお、上記特性は、基板(1)とターゲットを水平に配
置してスパッタリングを行って得られた水平膜及び基板
(1)とターゲットを斜めに配置してスパッタリングを
行って得られた斜め膜について、それぞれ測定した。ま
た、比較のため、Fe−Aj2−3i系磁性薄膜単層の
ものについても同様に測定を行った。
The above characteristics apply to a horizontal film obtained by performing sputtering with the substrate (1) and target arranged horizontally, and an oblique film obtained by performing sputtering with the substrate (1) and target arranged diagonally. , were measured respectively. For comparison, measurements were also conducted on a single Fe-Aj2-3i magnetic thin film.

第1表 この第1表より、積層化により保磁力HC1透磁率μと
もに改善され、例えばIM)Izでの透磁率μについて
みれば、水平膜では中間層の膜厚を50人としたときに
最大となり、斜め膜では中間層を100〜500人とし
たときに最大値を示すこきとがわかる。
Table 1 From this Table 1, it can be seen that both coercive force HC1 and magnetic permeability μ are improved by lamination.For example, looking at the magnetic permeability μ in IM)Iz, when the thickness of the intermediate layer is 50 in the horizontal film, It can be seen that in the diagonal film, the maximum value is reached when the middle class is 100 to 500 people.

実施例2゜ 先の実施例1と同様の方法に従い、中間層の膜厚を50
0人、トータルの膜厚を5μmとし、積層数を第2表に
示すように変え、水平膜および斜め膜からなる軟磁性薄
膜を作成した。得られた各軟磁性薄膜について、それぞ
れ保磁力Hc及びIMHzにおける透磁率μを測定した
。結果を第2表に示す。
Example 2 According to the same method as in Example 1 above, the thickness of the intermediate layer was 50°.
A soft magnetic thin film consisting of a horizontal film and an oblique film was prepared by changing the number of laminated layers as shown in Table 2, with a total film thickness of 5 μm and a total film thickness of 5 μm. The coercive force Hc and magnetic permeability μ at IMHz were measured for each of the obtained soft magnetic thin films. The results are shown in Table 2.

第2表 この第2表より、積層数によらず、各軟磁性薄膜では保
磁力Heおよび透磁率μの改善が見られることがわかる
Table 2 From Table 2, it can be seen that the coercive force He and magnetic permeability μ are improved in each soft magnetic thin film, regardless of the number of laminated layers.

〔発明の効果〕〔Effect of the invention〕

以上の説明からも明らかなように、本発明の軟磁性薄膜
はFe−Aj!−3i系磁性薄膜と窒素を含有するFe
−Al−5i系磁性1膜の積層構造としているので、保
磁力が極めて小さなものとなるとともに、透磁率が大幅
に向上し、良好な軟磁性特性が得られる。また、本発明
の軟磁性薄膜では、中間膜に窒素を含有するFe−A7
!−3t系磁性薄膜を用いているので、飽和磁束密度や
比抵抗、膜硬度の改善も図られる。
As is clear from the above description, the soft magnetic thin film of the present invention is Fe-Aj! -3i magnetic thin film and nitrogen-containing Fe
Since it has a laminated structure of one -Al-5i magnetic film, the coercive force is extremely small, the magnetic permeability is greatly improved, and good soft magnetic properties are obtained. In addition, in the soft magnetic thin film of the present invention, Fe-A7 containing nitrogen in the intermediate film
! Since a -3t magnetic thin film is used, it is possible to improve saturation magnetic flux density, specific resistance, and film hardness.

さらに、中間膜である窒素を含有するFe−Al−3i
系磁性薄膜を作成する手法としての反応スパッタ法は、
スパッタリング中に雰囲気ガスを置換するだけの操作で
済むため、多層膜化が容易である。
Furthermore, Fe-Al-3i containing nitrogen, which is an intermediate film,
The reactive sputtering method is a method for creating magnetic thin films.
Multilayer film formation is easy because the only operation required is to replace the atmospheric gas during sputtering.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明にかかる軟磁性薄膜の一実施例の構成を
示す要部拡大断面図である。 2・・・窒素を含有するFe−A7!−3i系磁性薄膜
FIG. 1 is an enlarged sectional view of a main part showing the structure of an embodiment of a soft magnetic thin film according to the present invention. 2...Fe-A7 containing nitrogen! -3i magnetic thin film

Claims (1)

【特許請求の範囲】  Fe、Al、Siを主成分とし上記Al及びSiの組
成範囲がそれぞれ2〜10重量%Al、4〜15重量%
Siである磁性薄膜と、 Fe、Al、Siを主成分とし上記Al、及びSiの組
成範囲がそれぞれ2〜10重量%Al、4〜15重量%
Siであって、さらに0.005〜4重量%の窒素を含
有する磁性薄膜とを積層したことを特徴とする軟磁性薄
膜。
[Claims] Fe, Al, and Si are the main components, and the composition ranges of Al and Si are 2 to 10% by weight, Al and 4 to 15% by weight, respectively.
A magnetic thin film that is Si, and the main components are Fe, Al, and Si, and the composition ranges of Al and Si are 2 to 10% by weight Al and 4 to 15% by weight, respectively.
A soft magnetic thin film characterized by laminating a magnetic thin film made of Si and further containing 0.005 to 4% by weight of nitrogen.
JP17428185A 1985-08-09 1985-08-09 Soft magnetic thin film Expired - Fee Related JPH0626167B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17428185A JPH0626167B2 (en) 1985-08-09 1985-08-09 Soft magnetic thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17428185A JPH0626167B2 (en) 1985-08-09 1985-08-09 Soft magnetic thin film

Publications (2)

Publication Number Publication Date
JPS6235604A true JPS6235604A (en) 1987-02-16
JPH0626167B2 JPH0626167B2 (en) 1994-04-06

Family

ID=15975919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17428185A Expired - Fee Related JPH0626167B2 (en) 1985-08-09 1985-08-09 Soft magnetic thin film

Country Status (1)

Country Link
JP (1) JPH0626167B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442108A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Heat-resisting magnetic film
JPH05239601A (en) * 1992-02-28 1993-09-17 Victor Co Of Japan Ltd Soft magnetic alloy thin film and its manufacture
EP0606750A2 (en) * 1993-01-15 1994-07-20 International Business Machines Corporation Layered magnetic structure for use in a magnetic head

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6442108A (en) * 1987-08-10 1989-02-14 Hitachi Ltd Heat-resisting magnetic film
JPH05239601A (en) * 1992-02-28 1993-09-17 Victor Co Of Japan Ltd Soft magnetic alloy thin film and its manufacture
EP0606750A2 (en) * 1993-01-15 1994-07-20 International Business Machines Corporation Layered magnetic structure for use in a magnetic head
JPH06244028A (en) * 1993-01-15 1994-09-02 Internatl Business Mach Corp <Ibm> Magnetic laminar structure and manufacture thereof
EP0606750A3 (en) * 1993-01-15 1994-10-26 Ibm Layered magnetic structure for use in a magnetic head.
CN1077705C (en) * 1993-01-15 2002-01-09 国际商业机械公司 Multilayered sendust films utilizing gas doping and optimized sendust seed layers

Also Published As

Publication number Publication date
JPH0626167B2 (en) 1994-04-06

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