JPH05239601A - Soft magnetic alloy thin film and its manufacture - Google Patents

Soft magnetic alloy thin film and its manufacture

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Publication number
JPH05239601A
JPH05239601A JP4078455A JP7845592A JPH05239601A JP H05239601 A JPH05239601 A JP H05239601A JP 4078455 A JP4078455 A JP 4078455A JP 7845592 A JP7845592 A JP 7845592A JP H05239601 A JPH05239601 A JP H05239601A
Authority
JP
Japan
Prior art keywords
thin film
gas
alloy thin
alloy
magnetic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4078455A
Other languages
Japanese (ja)
Inventor
Takayuki Izeki
隆之 井関
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Victor Company of Japan Ltd
Original Assignee
Victor Company of Japan Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Victor Company of Japan Ltd filed Critical Victor Company of Japan Ltd
Priority to JP4078455A priority Critical patent/JPH05239601A/en
Publication of JPH05239601A publication Critical patent/JPH05239601A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To form a soft magnetic alloy thin film excellent in saturation mag netic flux density and coercive force by using an Fe-Al-Si-Co 'Sendust (R)'alloy as a target material and executing sputtering in an atmosphere of an N2 gas-contg. Ar gas. CONSTITUTION:An Fe-Al-Si-Co 'Sendust (R)' alloy is used as a target material, and reaction sputtering is executed in an atmosphere formed by mixing an N gas having 2.5 to 3.5% partial pressure into an Ar gas to form an Fe-Al-Si- Co-N alloy thin film on a film forming substrate heated to about 200 to 300 deg.C. In this way, the objective soft magnetic alloy thin film constituted of 4.0 to 8.0% Al, 6.0 to 12.0% Si, 2.0 to 4.0% Co and 1.0 to 1.7% N, and the balance substantial Fe and having about >=1200G saturation magnetic flux density and about <=0.20e coercive force can be obtd.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、軟磁性合金薄膜とその
製造方法に係わり、特に磁気ヘッドコア材に用いられる
飽和磁束密度と抗磁力の優れた軟磁性合金薄膜とその製
造方法に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a soft magnetic alloy thin film and a method for producing the same, and more particularly to a soft magnetic alloy thin film having excellent saturation magnetic flux density and coercive force used for a magnetic head core material and a method for producing the same. ..

【0002】[0002]

【従来の技術】近年、磁気記録再生装置の最も重要な部
品である磁気ヘッドコア材の磁気特性は、磁気テープの
高密度化などに伴って厳しい特性が要求されてきてい
る。
2. Description of the Related Art In recent years, the magnetic characteristics of a magnetic head core material, which is the most important component of a magnetic recording / reproducing apparatus, have been required to be strict as the density of magnetic tape increases.

【0003】即ち、高い飽和磁束密度を有すること、 低い抗磁力を有すること、 優れた耐磨耗性と耐蝕性を有すること、 高周波領域での磁気特性が良好であること、 精密加工が容易なこと、 温度に対し磁気特性が安定なこと、 などの種々の特性が要求される。That is, it has a high saturation magnetic flux density, a low coercive force, excellent wear resistance and corrosion resistance, good magnetic characteristics in a high frequency range, and easy precision machining. Various characteristics such as stable magnetic characteristics against temperature are required.

【0004】これら要求に対して従来から用いられてい
る磁気ヘッドコア材としては、フェライトあるいはパー
マロイ系合金などが用いられているが、これら材料には
一長一短がある。
Ferrite or permalloy-based alloys have been used as magnetic head core materials conventionally used to meet these demands, but these materials have advantages and disadvantages.

【0005】例えば、フェライトはきわめて高い電気抵
抗と高硬度を有し、高周波特性、耐磨耗性および耐蝕性
に優れた特性を有するが、反面飽和磁束密度が低く、磁
気ヘッドに用いた場合にノイズが発生し易く、また機械
的に脆いため加工性にも問題がある。
For example, ferrite has extremely high electric resistance and high hardness, and has excellent high-frequency characteristics, wear resistance and corrosion resistance, but on the other hand, it has a low saturation magnetic flux density and is used in a magnetic head. There is a problem in workability because it is easy to generate noise and mechanically brittle.

【0006】一方、パーマロイ系合金は、比較的高い飽
和磁束密度を有するが、磁気テープの高密度化に対処す
るには未だ充分な値とは言えず、さらに種々の添加元素
による改良が行われているが耐磨耗性は充分とはいえな
い。
On the other hand, although the permalloy type alloy has a relatively high saturation magnetic flux density, it cannot be said to be a sufficient value for coping with the high density of the magnetic tape, and further improvement by various additive elements is performed. However, the abrasion resistance is not sufficient.

【0007】このような理由から最近センダスト系合金
が磁気ヘッド材として注目されている。即ち、センダス
ト系合金はFe,Si,Al を主成分とする極めて高飽和磁
束密度を有すると共に、耐磨耗性も良好であるという特
徴を保有し、磁気ヘッドコア材として期待度の大きい合
金である。
For these reasons, sendust type alloys have recently attracted attention as magnetic head materials. That is, the sendust-based alloy has the characteristics that it has an extremely high saturation magnetic flux density containing Fe, Si, and Al as the main components and that it also has good wear resistance, and is a highly promising alloy as a magnetic head core material. ..

【0008】[0008]

【発明が解決しようとする課題】しかしながら、センダ
スト系合金はSi 及びAl を多量に含有しており極めて
脆弱で加工が困難であると共に、昨今の高保磁力の磁気
記録媒体(磁気テープ)に対して飽和磁束密度をさらに
高め、かつ抗磁力を低くするという磁気特性の改善が要
望されている。
However, the sendust-based alloy contains a large amount of Si and Al and is extremely fragile and difficult to process. In addition, it is difficult to process the magnetic recording medium (magnetic tape) of high coercive force these days. There is a demand for improvement in magnetic characteristics such that the saturation magnetic flux density is further increased and the coercive force is lowered.

【0009】[0009]

【課題を解決するための手段】本発明は、上記課題を解
決するためになされたものであり、Al; 4.0〜8.0 %,
Si; 6.0〜12.0%,Co; 2.0〜4.0 %、N;1.0〜1.7
%、残余が実質的にFe からなる軟磁性合金薄膜と、ス
パッタリング装置のターゲット材にFe-Al-Si-Co 系
センダスト合金を用いて、Ar ガスに分圧 2.5〜3.5 %
のNガスを混入させた雰囲気中で反応性スパッタリング
を行い、約 200〜300 ℃に加熱された成膜基板上にFe-
Al-Si-Co-N系合金薄膜を形成することを特徴とする
軟磁性合金薄膜の製造方法とを提供するものである。
The present invention has been made to solve the above-mentioned problems. Al; 4.0-8.0%,
Si; 6.0-12.0%, Co; 2.0-4.0%, N; 1.0-1.7
%, A soft magnetic alloy thin film consisting essentially of Fe, and a Fe-Al-Si-Co-based sendust alloy as the target material of the sputtering apparatus, with a partial pressure of 2.5 to 3.5% for Ar gas.
Reactive sputtering is performed in an atmosphere mixed with N gas, and Fe- is deposited on the film-forming substrate heated to about 200-300 ℃.
The present invention provides a method for producing a soft magnetic alloy thin film, which comprises forming an Al-Si-Co-N alloy thin film.

【0010】[0010]

【実施例】本発明は、一般的なFe-Al-Si からなるセ
ンダスト系合金に対して、磁気特性を向上させるために
有効なCo と、抗磁力と飽和磁束密度を向上させるため
に有効なNとを含有させて検討した結果、Fe-Al-Si
からなるセンダスト系合金にCo;2.0 〜 4.0%と、N;
1.0〜 1.7%を含有させた組成からなる新規なFe-Al-
Si-Co-N系軟磁性合金薄膜を見い出すことができた。
EXAMPLE The present invention is effective for improving the magnetic properties of Co, and effective for improving the coercive force and the saturation magnetic flux density, with respect to the general sendust type alloy composed of Fe-Al-Si. As a result of studying the inclusion of N and Fe-Al-Si
To a Sendust-based alloy consisting of Co; 2.0 to 4.0%, and N;
Novel Fe-Al-with a composition containing 1.0 to 1.7%
We were able to find a Si-Co-N soft magnetic alloy thin film.

【0011】ここで、Fe-Al-Si からなるセンダスト
系合金は、一般的なセンダスト系合金であるが、優れた
磁気特性を保つためには少なくとも基本成分であるAl,
Siは、Al;4.0 %、Si;6.0 %以上含有する必要があ
るが、しかし、多量に含有し過ぎると逆に磁気特性が低
下し始めるのでAl;8.0 %、Si;12.0%以下であること
が望ましい。
Here, the sendust type alloy composed of Fe-Al-Si is a general sendust type alloy, but in order to maintain excellent magnetic properties, at least the basic component Al,
Si must contain Al; 4.0% and Si; 6.0% or more. However, if too much is contained, the magnetic properties will start to deteriorate, so the content should be Al; 8.0% and Si; 12.0% or less. Is desirable.

【0012】さらに、Co を 2.0〜4.0 %としたこと
は、Co は磁気特性を向上させるために有効な元素であ
り、2.o %以上含有する必要があるが、しかし、多量に
含有し過ぎると逆に磁気特性が低下し始めるので4.0 %
以下に限定した。
Furthermore, the fact that Co is 2.0 to 4.0% means that Co is an effective element for improving the magnetic properties, and it is necessary to contain Co in an amount of 2.o% or more, but too much. On the contrary, the magnetic characteristics start to deteriorate, so 4.0%
Limited to:

【0013】また、Nを 1.0〜1.7 %としたことは、N
は抗磁力と飽和磁束密度を向上させるために有効な元素
であり、1.0 %以上含有する必要があるが、しかし、多
量に含有し過ぎると逆に磁気特性が低下し始めるので1.
7 %以下とした。これら限定理由については後に説明す
る。
Further, the fact that N is 1.0 to 1.7% means that N
Is an element effective for improving the coercive force and the saturation magnetic flux density, and it is necessary to contain 1.0% or more.However, if too much is contained, the magnetic properties will start to deteriorate.
It was set to 7% or less. The reasons for these limitations will be described later.

【0014】次に、本発明のFe-Al-Si-Co-N系合金
薄膜の製造方法について詳細に説明する。
Next, the method for producing the Fe-Al-Si-Co-N type alloy thin film of the present invention will be described in detail.

【0015】本発明のFe-Al-Si-Co-N系合金薄膜
は、スパッタリング法などの真空成膜技術を用いて成膜
される。ターゲット材には、Al-Si-Fe からなるセン
ダスト系合金にCo を 2.0〜4.0 %添加した合金が用い
られ、さらに成膜基板を約 200〜300 ℃に加熱して行わ
れる。このスパッタリング法は、ターゲット材と窒素を
反応させるためにスパッタリング装置のチャンバー内
を、Ar ガスとNガスとの混合ガスで置換して行われ
る。これらAr ガスとNガスは、夫々のマスフローコン
トローラなどを用いて分圧量を正確に制御する必要があ
る。
The Fe-Al-Si-Co-N alloy thin film of the present invention is formed by using a vacuum film forming technique such as a sputtering method. As the target material, an alloy in which 2.0 to 4.0% of Co is added to a Sendust-based alloy of Al-Si-Fe is used, and the film formation substrate is heated to about 200 to 300 ° C. This sputtering method is performed by replacing the inside of the chamber of the sputtering device with a mixed gas of Ar gas and N gas in order to react the target material with nitrogen. The partial pressures of these Ar gas and N gas must be accurately controlled by using their respective mass flow controllers.

【0016】以下にスパッタリング条件を示す。The sputtering conditions are shown below.

【0017】真空度 3×10-6 Torr 以下 基板温度 250 ℃ 成膜基板 結晶化ガラス ガス Ar+N混合ガス ガス圧 6 mTorr ガス流量 混合ガス 20 CCM 膜厚 約3 μm 成膜速度 約700 nm/min 熱処理 550℃ 1時間真空中保持 上記スパッタリング条件を用いて、Co 添加量を2.0 〜
6.0 %に変化させたFe-Al-Si-Co 系合金をターゲッ
トにして、Nガス分圧を1〜5%に変化させたFe-Al-
Si-Co-N系合金薄膜(試料N0,1〜6)と、Nガス分圧を
0%にしたFe-Al-Si-Co 系合金薄膜(試料N0,7) を
下記のごとく作製し、これら合金薄膜について測定を行
った。
Degree of vacuum 3 × 10 -6 Torr or less Substrate temperature 250 ° C. Deposition substrate Crystallized glass gas Ar + N mixed gas Gas pressure 6 mTorr Gas flow mixed gas 20 CCM Film thickness about 3 μm Film deposition rate About 700 nm / min Heat treatment 550 ° C. Hold in vacuum for 1 hour Using the above sputtering conditions, the amount of Co added is 2.0 to
Fe-Al-Si-Co-based alloy with 6.0% change was used as the target, and Fe-Al- with N gas partial pressure was changed to 1-5%.
Si-Co-N alloy thin film (sample N0,1-6) and N gas partial pressure
Fe-Al-Si-Co based alloy thin films (Sample N0,7) made to be 0% were prepared as follows, and measurement was performed on these alloy thin films.

【0018】 Co 添加量% Nガス分圧% 薄膜組成 試料N0,1 6 1.0 Fe-Al-Si-Co-N系合金 試料N0,2 5 2.0 Fe-Al-Si-Co-N系合金 試料N0,3 4 2.5 Fe-Al-Si-Co-N系合金 試料N0,4 4 3.0 Fe-Al-Si-Co-N系合金 試料N0,5 3 3.5 Fe-Al-Si-Co-N系合金 試料N0,6 2 4.0 Fe-Al-Si-Co-N系合金 試料N0,7 8 0 Fe-Al-Si-Co 系合金 上記試料N0,1〜6 について抗磁力の測定を行った結果、
Nガス分圧は 2.5〜3.5 %において極めて低い抗磁力を
示し、4 %以上では1Oe以上となり軟磁性が失われてし
まう結果がえられた。
Co addition amount% N gas partial pressure% Thin film composition Sample N0,1 6 1.0 Fe-Al-Si-Co-N series alloy Sample N0,2 5 2.0 Fe-Al-Si-Co-N System alloy Sample N0,3 4 2.5 Fe-Al-Si-Co-N system alloy Sample N0,4 4 3.0 Fe-Al-Si-Co-N system alloy Sample N0,5 3 3.5 Fe- Al-Si-Co-N-based alloy Sample N0,6 2 4.0 Fe-Al-Si-Co-N-based alloy Sample N0,7 8 0 Fe-Al-Si-Co-based alloy Above samples N0,1 to 6 As a result of measuring the coercive force of
When the N gas partial pressure was 2.5 to 3.5%, the coercive force was extremely low, and when it was 4% or more, it was 1 Oe or more, and the soft magnetism was lost.

【0019】図1は、試料N0,5におけるNガス分圧と抗
磁力との関係を示す図であり、Nガス分圧は 2.5〜3.5
%の範囲において最良なる抗磁力を示している。
FIG. 1 is a diagram showing the relationship between the partial pressure of N gas and the coercive force of the samples N0,5. The partial pressure of N gas is 2.5 to 3.5.
It shows the best coercive force in the range of%.

【0020】図2は、上記試料N0,1〜7 のEPMA分析
結果であり、同図からNガス分圧の増加に比例して合金
膜中のN含有量が増加することがわかる。
FIG. 2 shows the EPMA analysis results of the samples N0,1 to 7, and it can be seen from the figure that the N content in the alloy film increases in proportion to the increase in the partial pressure of N gas.

【0021】上記した測定結果から、スパッタリング条
件におけるNガス分圧を 2.5〜3.5%にすると共に、合
金膜中のN含有量を 1.0〜1.7 %、Co 含有量を 2.0〜
4.0%にした試料N0,3〜5 が、良い結果が得られること
がわかる。
From the above measurement results, the partial pressure of N gas under the sputtering conditions is set to 2.5 to 3.5%, the N content in the alloy film is 1.0 to 1.7%, and the Co content is 2.0 to.
It can be seen that good results are obtained for samples N0,3 to 5 with 4.0%.

【0022】さらに、上記試料N0,3、試料N0,5,試料N
0,7について磁気特性を測定した。測定にあたり飽和磁
束密度、抗磁力、異方性磁界はVSMで測定し、透磁率
はフェライトヨーク法を用いて測定した。
Further, the above samples N0,3, sample N0,5, sample N
Magnetic properties of 0 and 7 were measured. In the measurement, the saturation magnetic flux density, the coercive force, and the anisotropic magnetic field were measured by VSM, and the magnetic permeability was measured by using the ferrite yoke method.

【0023】図3は、その磁気特性測定結果を示す図
で、同図よりNガス分圧が 2.5%及び3.5 %の試料N0,
3、試料N0,5は、共に高い飽和磁束密度と低い抗磁力の
特性を示し、従来のセンダスト合金である試料N0,7より
優れたものであることがわかる。
FIG. 3 is a diagram showing the results of measurement of the magnetic characteristics. From the same figure, it can be seen that the samples N0,
3 and Samples N0 and 5 both show high saturation magnetic flux density and low coercive force, and are superior to the conventional Sendust alloy, Samples N0 and 7.

【0024】図4は、試料N0,3、試料N0,5,試料N0,7の
初透磁率の周波数特性図であり、従来のセンダスト膜で
ある試料N0,7(図中、実線で示す)に比べ、Nガス分圧
が 2.5%のFe-Al-Si-Co-N系合金薄膜である試料N
0,3(図中、二点鎖線で示す)は周波数全域において従
来のセンダスト膜より高い透磁率を示している。また、
Nガス分圧が 3.5%のFe-Al-Si-Co-N系合金薄膜で
ある試料N0,5(図中、点線で示す)においても高周波域
(10MHz)では従来のセンダスト膜より高い透磁率を示し
ている。
FIG. 4 is a frequency characteristic diagram of the initial magnetic permeability of the samples N0,3, N0,5 and N0,7, which is a conventional sendust film sample N0,7 (indicated by a solid line in the figure). Sample N, which is a Fe-Al-Si-Co-N alloy thin film with a N gas partial pressure of 2.5% compared to
0 and 3 (indicated by a chain double-dashed line in the figure) show higher magnetic permeability than the conventional sendust film over the entire frequency range. Also,
Even in sample N0,5 (shown by the dotted line in the figure), which is a Fe-Al-Si-Co-N alloy thin film with N gas partial pressure of 3.5%, the magnetic permeability is higher than that of the conventional sendust film in the high frequency range (10 MHz). Is shown.

【0025】上述したごとく本発明のFe-Al-Si-Co-
N系合金薄膜は、従来のセンダスト膜より磁気特性に優
れたものであり、MIG 型磁気ヘッドや薄膜磁気ヘッドに
用いて好適である。
As described above, Fe-Al-Si-Co- of the present invention
The N-based alloy thin film has magnetic properties superior to those of the conventional sendust film, and is suitable for use in a MIG type magnetic head or a thin film magnetic head.

【0026】[0026]

【発明の効果】上述したように、Al; 4.0〜8.0 %,S
i; 6.0〜12.0%,Co; 2.0〜4.0 %、N;1.0〜1.7 %、
残余が実質的にFe からなる軟磁性合金薄膜は、従来の
センダスト系合金よりも飽和磁束密度が1200G以上、そ
して抗磁力が0.2 Oe以下に磁気特性を改善することがで
きた。
As described above, Al; 4.0-8.0%, S
i; 6.0 to 12.0%, Co; 2.0 to 4.0%, N; 1.0 to 1.7%,
The soft magnetic alloy thin film having the balance substantially Fe was able to improve the magnetic characteristics to a saturation magnetic flux density of 1200 G or more and a coercive force of 0.2 Oe or less as compared with the conventional Sendust-based alloy.

【0027】したがって、本発明のFe-Al-Si-Co-N
系合金薄膜を用いた磁気ヘッドは、昨今の高保磁力の媒
体にも充分対応することができるものである。
Therefore, the Fe-Al-Si-Co-N of the present invention
The magnetic head using the system alloy thin film can sufficiently cope with the medium of recent high coercive force.

【0028】また、スパッタリング装置のターゲット材
にFe-Al-Si-Co 系センダスト合金を用いて、Ar ガ
スに分圧 2.5〜3.5 %のNガスを混入させた雰囲気中で
反応性スパッタリングを行い、約 200〜300 ℃に加熱さ
れた成膜基板上にFe-Al-Si-Co-N系合金薄膜を形成
する軟磁性合金薄膜の製造方法を提供することにより、
容易にFe-Al-Si-Co-N系合金の堆積膜が得られるも
のである。また、成膜基板を約 200〜300 ℃に加熱して
反応性スパッタリングを行うようにしたことにより、成
膜基板とFe-Al-Si-Co-N系合金薄膜の付着力を強め
ることができるなどの効果を有するものである。
Fe-Al-Si-Co sendust alloy was used as the target material of the sputtering apparatus, and reactive sputtering was performed in an atmosphere in which Ar gas was mixed with N gas having a partial pressure of 2.5 to 3.5%. By providing a method of manufacturing a soft magnetic alloy thin film, which comprises forming an Fe-Al-Si-Co-N alloy thin film on a film-forming substrate heated to about 200 to 300 ° C,
The deposited film of the Fe-Al-Si-Co-N-based alloy can be easily obtained. Further, by heating the film-forming substrate to about 200 to 300 ° C. to perform the reactive sputtering, the adhesion between the film-forming substrate and the Fe-Al-Si-Co-N based alloy thin film can be strengthened. And so on.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明に係わるNガス分圧と抗磁力との関係図
である。
FIG. 1 is a relationship diagram between a partial pressure of N gas and a coercive force according to the present invention.

【図2】本発明のFe-Al-Si-Co-N系合金薄膜のEP
MA分析結果である。
FIG. 2 EP of Fe-Al-Si-Co-N alloy thin film of the present invention
It is a MA analysis result.

【図3】本発明のFe-Al-Si-Co-N系合金薄膜の磁気
特性測定結果である。
FIG. 3 is a result of measuring magnetic properties of the Fe-Al-Si-Co-N alloy thin film of the present invention.

【図4】本発明のFe-Al-Si-Co-N系合金薄膜の初透
磁率の周波数特性図である。
FIG. 4 is a frequency characteristic diagram of the initial magnetic permeability of the Fe-Al-Si-Co-N alloy thin film of the present invention.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.5 識別記号 庁内整理番号 FI 技術表示箇所 H01F 1/14 ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 5 Identification code Office reference number FI technical display location H01F 1/14

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】Al; 4.0〜8.0 %,Si; 6.0〜12.0%,C
o; 2.0〜4.0 %、N;1.0〜1.7 %、残余が実質的にFe
からなる軟磁性合金薄膜。
1. Al: 4.0 to 8.0%, Si; 6.0 to 12.0%, C
o; 2.0-4.0%, N; 1.0-1.7%, the balance is substantially Fe
A soft magnetic alloy thin film made of.
【請求項2】スパッタリング装置のターゲット材にFe-
Al-Si-Co 系センダスト合金を用いて、Ar ガスに分
圧 2.5〜3.5 %のNガスを混入させた雰囲気中で反応性
スパッタリングを行い、約 200〜300 ℃に加熱された成
膜基板上にFe-Al-Si-Co-N系合金薄膜を形成するこ
とを特徴とする軟磁性合金薄膜の製造方法。
2. Fe- is used as a target material for a sputtering apparatus.
On an Al-Si-Co sendust alloy, reactive sputtering was performed in an atmosphere in which Ar gas was mixed with N gas with a partial pressure of 2.5 to 3.5%, and the film was formed on a substrate heated to about 200 to 300 ° C. A method of manufacturing a soft magnetic alloy thin film, comprising forming an Fe-Al-Si-Co-N based alloy thin film on.
JP4078455A 1992-02-28 1992-02-28 Soft magnetic alloy thin film and its manufacture Pending JPH05239601A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4078455A JPH05239601A (en) 1992-02-28 1992-02-28 Soft magnetic alloy thin film and its manufacture

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4078455A JPH05239601A (en) 1992-02-28 1992-02-28 Soft magnetic alloy thin film and its manufacture

Publications (1)

Publication Number Publication Date
JPH05239601A true JPH05239601A (en) 1993-09-17

Family

ID=13662517

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4078455A Pending JPH05239601A (en) 1992-02-28 1992-02-28 Soft magnetic alloy thin film and its manufacture

Country Status (1)

Country Link
JP (1) JPH05239601A (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021356A (en) * 1983-07-14 1985-02-02 Nec Corp Soft magnetic alloy with high saturation magnetization and high magnetic permeability
JPS6235604A (en) * 1985-08-09 1987-02-16 Sony Corp Magnetically soft thin film
JPS6292306A (en) * 1985-10-17 1987-04-27 Sony Corp Magnetic thin film

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6021356A (en) * 1983-07-14 1985-02-02 Nec Corp Soft magnetic alloy with high saturation magnetization and high magnetic permeability
JPS6235604A (en) * 1985-08-09 1987-02-16 Sony Corp Magnetically soft thin film
JPS6292306A (en) * 1985-10-17 1987-04-27 Sony Corp Magnetic thin film

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