JPS623509B2 - - Google Patents
Info
- Publication number
- JPS623509B2 JPS623509B2 JP58170033A JP17003383A JPS623509B2 JP S623509 B2 JPS623509 B2 JP S623509B2 JP 58170033 A JP58170033 A JP 58170033A JP 17003383 A JP17003383 A JP 17003383A JP S623509 B2 JPS623509 B2 JP S623509B2
- Authority
- JP
- Japan
- Prior art keywords
- bubble
- information
- memory
- error detection
- correction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000012937 correction Methods 0.000 claims description 35
- 238000001514 detection method Methods 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 5
- 238000012546 transfer Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 4
- 230000005055 memory storage Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000003321 amplification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
Description
【発明の詳細な説明】
発明の技術分野
本発明は磁気バブル記憶装置制御方式、特に読
出した情報にエラーが発見された場合の制御方式
に関する。TECHNICAL FIELD OF THE INVENTION The present invention relates to a control method for a magnetic bubble storage device, and particularly to a control method when an error is found in read information.
従来技術と問題点
磁気バブル記憶装置は第1図に示すようにバブ
ルメモリ(バブルチツプ及び駆動コイル等からな
る)20をホストシステム(中央処理装置、
CPU)10にコントローラを介して接続してな
り、CPU10の外部記憶装置として動作する。
コントローラは磁気バブル情報書込み手段12、
同読出し手段14、誤り検出訂正手段16などか
らなる。バブルメモリ20は一般にはメジヤー・
マイナーループ型で、マイナーループのビツト数
(転送パターン数)とマイナーループの個数が記
憶容量を決定する。書込みは、ホストシステム1
0から8ビツトまたは16ビツト単位で書込みデー
タを送り、書込み手段12はこれを受けて該8ビ
ツトまたは16ビツト並列信号を直列信号に変換
し、これをバブルメモリ20の磁気バブル発生器
に与える。磁気バブル発生器は該直列信号に応じ
てバブルを発生し、これをメジヤーループへ逐次
転送し、マイナーループ数だけ発生したところで
(これがメモリ1ページ分のデータ)一斉にマイ
ナーループへ移す。かゝる動作が繰り返されてバ
ブルメモリ20への書込みが行なわれる。Prior Art and Problems As shown in FIG. 1, a magnetic bubble memory device uses a bubble memory (consisting of a bubble chip, a drive coil, etc.) 20 in a host system (a central processing unit,
(CPU) 10 via a controller, and operates as an external storage device for the CPU 10.
The controller includes magnetic bubble information writing means 12,
It consists of a readout means 14, an error detection and correction means 16, and the like. Bubble memory 20 is generally a major
It is a minor loop type, and the number of minor loop bits (number of transfer patterns) and the number of minor loops determine the storage capacity. Writing is done on host system 1
Write data is sent in units of 8 bits or 16 bits starting from 0, and the writing means 12 receives this, converts the 8 bits or 16 bits parallel signal into a serial signal, and supplies this to the magnetic bubble generator of the bubble memory 20. The magnetic bubble generator generates bubbles in response to the serial signal, sequentially transfers them to the major loop, and when the number of bubbles generated equal to the number of minor loops (this is data for one page of memory) is transferred all at once to the minor loop. Writing into the bubble memory 20 is performed by repeating such operations.
読出しはやはりページ単位で行なわれる。即ち
バブル転送でマイナーループ上の所望の(指定さ
れた)ページがメジヤーループへのトランスフア
ゲート部へ来たとき該ゲートを動作させて該ペー
ジのバブルを一斉にメジヤーループへ移し、バブ
ル検出器を通して電気信号に変え、増幅器で増幅
してTTLレベルの信号にする。この段階ではま
だ直列信号であるから、これは8ビツトまたは16
ビツト並列信号に変換し、ホストシステム10へ
転送する。かゝる増幅及び直並列変換を、読出し
手段14が行なう。 Reading is still performed page by page. That is, when a desired (designated) page on the minor loop comes to the transfer gate to the major loop in bubble transfer, the gate is operated to transfer the bubbles of that page all at once to the major loop, and an electrical signal is sent through the bubble detector. , and amplify it with an amplifier to make it a TTL level signal. Since it is still a serial signal at this stage, this is an 8-bit or 16-bit signal.
It is converted into a bit parallel signal and transferred to the host system 10. The reading means 14 performs such amplification and serial/parallel conversion.
バブルメモリ20から読出したデータは、誤り
検出訂正手段16によりチエツクし、エラーがあ
れば、それが訂正可能なら修正してホストシステ
ム10へ送ると共にバブルメモリ20へそれを書
込み、補正しておく。バブルメモリへ書込むデー
タには誤りチエツク及び訂正コードを付加してお
くので、該コードにより定まる少数ビツトのエラ
ーなら訂正可能である。訂正不可能な多数ビツト
のエラーならその旨をホストシステムに伝え、読
出し不能とする。 The data read from the bubble memory 20 is checked by the error detection and correction means 16, and if there is an error, if it can be corrected, it is corrected and sent to the host system 10, and also written into the bubble memory 20 for correction. Since an error check and correction code is added to the data written to the bubble memory, it is possible to correct small-bit errors determined by the code. If it is an uncorrectable multi-bit error, that fact is communicated to the host system, and reading is disabled.
ところでかゝるメモリシステムでは次の問題が
ある。即ちバブルは微小であり検出器出力は微弱
である。これはプリアンプ、メインアンプなどに
よりTTLレベルまで増幅し、また検出した段階
ではアナログ信号であるので閾値で2値化したり
する。この際エラーによりまたはノイズ混入によ
りメモリ記憶データは正しいのに読出し出力は誤
つていることがある。これを誤り検出訂正手段1
6に通せば正しいデータ、こゝではメモリ記憶デ
ータに戻されるはずであるが、誤り検出訂正手段
16は常に正しい動作をするとは限らず、訂正不
可能範囲のエラーを訂正してしまつたりする。こ
の場合、訂正結果は誤りであり、これをバブルメ
モリに書込んで修正処理をすると、正しい記憶デ
ータが破壊されてしまう。 However, such a memory system has the following problem. That is, the bubble is minute and the detector output is weak. This is amplified to the TTL level by a preamplifier, main amplifier, etc., and since it is an analog signal at the stage of detection, it is converted into a binary signal using a threshold value. At this time, the readout output may be erroneous even though the memory storage data is correct due to an error or noise contamination. This error detection and correction means 1
6, the correct data, in this case memory storage data, should be restored, but the error detection and correction means 16 does not always operate correctly and may end up correcting errors in the uncorrectable range. . In this case, the correction result is an error, and if this is written into the bubble memory and corrected, the correct stored data will be destroyed.
発明の目的
本発明はかゝる点を改善し、読出し系で生じる
エラーに対しメモリ記憶データの正確性を確保し
ようとするものである。OBJECTS OF THE INVENTION The present invention aims to improve the above points and ensure the accuracy of memory storage data against errors occurring in the reading system.
発明の構成
本発明はバブルメモリと、磁気バブル情報の書
込み手段と、磁気バブル情報の読出し手段と、前
記バブルメモリより読出した情報の誤り検出及び
修正を行なう誤り検出訂正手段とを備える磁気バ
ブル記憶装置の制御方式において、前記読出し情
報を一時的に記憶する読出し書込み可能な記憶素
子と、前記読出し情報と該記憶素子の記憶内容と
を比較する手段を用い、前記バブルメモリからの
読出し情報を前記記憶素子に記憶させると共に誤
り検出訂正手段でチエツクし、誤りが検出された
ときバブルメモリの再読出しを行なつてその読出
し情報を前記比較手段及び誤り検出訂正手段に入
力し、また前記記憶素子を読出して該比較手段で
該読出し情報を該記憶素子の記憶内容と比較し、
不一致の場合は前記誤り検出訂正手段の訂正結果
をホストシステムへ送るのみとし、一致する場合
は前記誤り検出訂正手段の訂正結果をホストシス
テムへ送ると共にバブルメモリへ書込んで記憶内
容の修正を行なうことを特徴とするが、次に実施
例を参照しながらこれを詳細に説明する。Structure of the Invention The present invention provides a magnetic bubble memory comprising a bubble memory, a magnetic bubble information writing means, a magnetic bubble information reading means, and an error detection and correction means for detecting and correcting errors in information read from the bubble memory. In the control method of the apparatus, a readable/writable memory element for temporarily storing the read information, and a means for comparing the read information and the storage contents of the memory element are used to convert the read information from the bubble memory into the memory element. The data is stored in the memory element and checked by the error detection and correction means, and when an error is detected, the bubble memory is read out again and the read information is input to the comparison means and the error detection and correction means, and the memory element is reading and comparing the read information with the storage content of the storage element by the comparing means;
If they do not match, the correction result of the error detection and correction means is only sent to the host system, and if they match, the correction result of the error detection and correction means is sent to the host system and written to the bubble memory to correct the stored contents. Next, this will be explained in detail with reference to examples.
発明の実施例
第2図は本発明の実施例を示し、第2図と同じ
部分には同じ符号が付してある。第1図と比べれ
ば明らかなように本発明では読出し情報を一時的
に記憶する読出し書込み可能な記憶素子本例では
RAM(ランダムアクセスメモリ)22および読
出し情報の比較手段24を設ける。第3図は第2
図の要部を回路的に示す図である。30はバブル
メモリコントローラであり、第2図の書込み手段
12および読出し手段14などからなる。26は
バブルメモリ20の読出し情報S1をTTLレベ
ルの信号に増幅する増幅器で、その出力S2がコ
ントローラ30に入つてホストシステム10への
転送に供されると共に、誤り検出訂正手段16に
入つてエラーチエツクされ、かつ記憶素子22に
入つてこゝに格納される。読出しはページ単位で
あるから記憶素子22の容量は1ページ分たとえ
ば64バイトである。Embodiment of the Invention FIG. 2 shows an embodiment of the invention, in which the same parts as in FIG. 2 are given the same reference numerals. As is clear from a comparison with FIG.
A RAM (random access memory) 22 and read information comparison means 24 are provided. Figure 3 is the second
FIG. 3 is a circuit diagram illustrating the main part of the figure. Reference numeral 30 denotes a bubble memory controller, which includes the writing means 12 and reading means 14 shown in FIG. 2, and the like. 26 is an amplifier that amplifies the read information S1 of the bubble memory 20 to a TTL level signal, and its output S2 enters the controller 30 for transfer to the host system 10, and also enters the error detection and correction means 16 to detect errors. It is checked and entered into storage element 22 and stored there. Since reading is performed in page units, the capacity of the storage element 22 is, for example, 64 bytes for one page.
動作を説明すると、読出し情報S2は上述のよ
うにコントローラ30、誤り検出訂正手段16、
及び記憶素子22に入り、誤り検出訂正手段16
がエラーを検出しない限り、読出し情報S2はホ
ストシステムへ8ビツト又は16ビツト単位で転送
される。誤り検出訂正手段16がエラーを検出す
ると、コントローラ30は同一ページの再読出し
を指示する。この読出し情報S2は比較器24及
び誤り検出訂正手段16に入力し、該手段16で
は誤り訂正を行なう。コントローラ30はまた記
憶素子22の読出しを指示し、この読出し情報S
3も比較器24に入力する。比較器24はこれら
の情報S2,S3を各ビツト毎に比較し、一致、
不一致をチエツクする。読出しが正しく(記憶内
容通りに)行なわれたのなら前回読出し情報S3
と今回読出し情報S2とは一致しているはずで、
それが誤りなら記憶内容そのものが誤りであるか
ら、コントローラ30は誤り検出訂正手段16の
訂正結果をホストシステムへ送りかつそれをバブ
ルメモリ20の該当ページへ書込む。 To explain the operation, the read information S2 is sent to the controller 30, error detection and correction means 16,
and enters the storage element 22 and the error detection and correction means 16
As long as no error is detected, the read information S2 is transferred to the host system in 8-bit or 16-bit units. When the error detection and correction means 16 detects an error, the controller 30 instructs rereading of the same page. This read information S2 is input to the comparator 24 and the error detection and correction means 16, and the error correction means 16 performs error correction. The controller 30 also instructs the reading of the storage element 22, and reads this read information S.
3 is also input to the comparator 24. The comparator 24 compares these pieces of information S2 and S3 bit by bit, and if they match,
Check for discrepancies. If the reading was performed correctly (according to the stored contents), the previous read information S3
should match the current read information S2,
If it is an error, the stored content itself is an error, so the controller 30 sends the correction result of the error detection and correction means 16 to the host system and writes it to the corresponding page of the bubble memory 20.
これに対してノイズ混入などにより前回読出し
情報S3に誤りがあつたのなら、今回読出し情報
S2に同じエラーがあることは稀れであり(ノイ
ズ混入などは一時的なもの)、S2≠S3である
確率が高い。この場合コントローラは誤り検出訂
正手段16により訂正されたデータをホストシス
テムへ送るだけで、該データのバブルメモリへの
再書込み、メモリ内容修正は行なわない。ホスト
システムへ送られる訂正データが正しいか否けは
誤り検出訂正手段の動作が正常か否かに依るが、
この点(信頼度)については従来方式と同様であ
り、本発明によれば正しいメモリ記憶データを破
壊してしまうことがないという利点が得られる。 On the other hand, if there was an error in the previous read information S3 due to noise contamination, it is rare that the same error occurs in the current read information S2 (noise contamination is temporary), and S2≠S3. There is a high probability. In this case, the controller only sends the data corrected by the error detection and correction means 16 to the host system, but does not rewrite the data into the bubble memory or modify the memory contents. Whether or not the correction data sent to the host system is correct depends on whether the error detection and correction means operates normally.
This point (reliability) is similar to the conventional method, and the present invention has the advantage that correct memory storage data is not destroyed.
発明の効果
以上説明したように本発明によれば、記憶デー
タは正しいのにノイズ混入などで読出し出力がエ
ラーとなつた場合、誤り検出訂正手段の誤動作で
正しい記憶データが破壊されるようなことがなく
なり、磁気バブル記憶装置の信頼性向上に寄与す
る所が大である。Effects of the Invention As explained above, according to the present invention, even if the stored data is correct, if the read output becomes an error due to noise contamination, the correct stored data will not be destroyed due to malfunction of the error detection and correction means. This greatly contributes to improving the reliability of magnetic bubble storage devices.
第1図は磁気バブル記憶装置の構成を示すブロ
ツク図、第2図および第3図は本発明の実施例を
示すブロツク図である。
図面で、20はバブルメモリ、12は書込み手
段、14は読出し手段、16は誤り検出訂正手
段、22は記憶素子、24は比較手段である。
FIG. 1 is a block diagram showing the structure of a magnetic bubble storage device, and FIGS. 2 and 3 are block diagrams showing embodiments of the present invention. In the drawing, 20 is a bubble memory, 12 is a writing means, 14 is a reading means, 16 is an error detection and correction means, 22 is a storage element, and 24 is a comparison means.
Claims (1)
段と、磁気バブル情報の読出し手段と、前記バブ
ルメモリより読出した情報の誤り検出及び修正を
行なう誤り検出訂正手段とを備える磁気バブル記
憶装置の制御方式において、 前記読出し情報を一時的に記憶する読出し書込
み可能な記憶素子と、前記読出し情報と該記憶素
子の記憶内容とを比較する手段を用い、 前記バブルメモリからの読出し情報を前記記憶
素子に記憶させると共に誤り検出訂正手段でチエ
ツクし、誤りが検出されたときバブルメモリの再
読出しを行なつてその読出し情報を前記比較手段
及び誤り検出訂正手段に入力し、また前記記憶素
子を読出して該比較手段で該読出し情報を該記憶
素子の記憶内容と比較し、不一致の場合は前記誤
り検出訂正手段の訂正結果をホストシステムへ送
るのみとし、一致する場合は前記誤り検出訂正手
段の訂正結果をホストシステムへ送ると共にバブ
ルメモリへ書込んで記憶内容の修正を行なうこと
を特徴とする磁気バブル記憶装置の制御方式。[Scope of Claims] 1. A magnetic bubble comprising a bubble memory, magnetic bubble information writing means, magnetic bubble information reading means, and error detection and correction means for detecting and correcting errors in information read from the bubble memory. In a control method for a storage device, the reading information from the bubble memory is controlled by using a readable/writable storage element that temporarily stores the read information and a means for comparing the read information and the storage content of the storage element. The information is stored in the memory element and checked by the error detection and correction means, and when an error is detected, the bubble memory is read out again and the read information is input to the comparison means and the error detection and correction means. The comparison means compares the read information with the storage contents of the storage element, and if they do not match, the correction result of the error detection and correction means is only sent to the host system, and if they match, the error detection and correction means A control method for a magnetic bubble storage device characterized in that the correction result is sent to a host system and written into a bubble memory to correct the stored contents.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58170033A JPS6061981A (en) | 1983-09-14 | 1983-09-14 | Control system of magnetic bubble memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58170033A JPS6061981A (en) | 1983-09-14 | 1983-09-14 | Control system of magnetic bubble memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6061981A JPS6061981A (en) | 1985-04-09 |
JPS623509B2 true JPS623509B2 (en) | 1987-01-26 |
Family
ID=15897359
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58170033A Granted JPS6061981A (en) | 1983-09-14 | 1983-09-14 | Control system of magnetic bubble memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6061981A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02102411U (en) * | 1989-01-27 | 1990-08-15 | ||
JPH0616403U (en) * | 1991-02-19 | 1994-03-04 | 正二 永吉 | A vest-type underwear with a far-infrared radiation special ceramic printed material that reaches the buttocks at the hem. |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5471528A (en) * | 1977-11-17 | 1979-06-08 | Fujitsu Ltd | Read-in system for magnetic bubble memory |
-
1983
- 1983-09-14 JP JP58170033A patent/JPS6061981A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5471528A (en) * | 1977-11-17 | 1979-06-08 | Fujitsu Ltd | Read-in system for magnetic bubble memory |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02102411U (en) * | 1989-01-27 | 1990-08-15 | ||
JPH0616403U (en) * | 1991-02-19 | 1994-03-04 | 正二 永吉 | A vest-type underwear with a far-infrared radiation special ceramic printed material that reaches the buttocks at the hem. |
Also Published As
Publication number | Publication date |
---|---|
JPS6061981A (en) | 1985-04-09 |
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