JPS6233016Y2 - - Google Patents

Info

Publication number
JPS6233016Y2
JPS6233016Y2 JP1982030612U JP3061282U JPS6233016Y2 JP S6233016 Y2 JPS6233016 Y2 JP S6233016Y2 JP 1982030612 U JP1982030612 U JP 1982030612U JP 3061282 U JP3061282 U JP 3061282U JP S6233016 Y2 JPS6233016 Y2 JP S6233016Y2
Authority
JP
Japan
Prior art keywords
etching
liquid
solution
tank
seal block
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP1982030612U
Other languages
Japanese (ja)
Other versions
JPS58135465U (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP3061282U priority Critical patent/JPS58135465U/en
Publication of JPS58135465U publication Critical patent/JPS58135465U/en
Application granted granted Critical
Publication of JPS6233016Y2 publication Critical patent/JPS6233016Y2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)

Description

【考案の詳細な説明】 本考案はエツチング処理装置等の如く化学的処
理溶液を収納した表面処理装置に関するものであ
る。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a surface treatment apparatus containing a chemical treatment solution, such as an etching treatment apparatus.

太陽電池等の半導体デバイスの微細加工、プリ
ント基板の配線形成、表示セル等の電極形成その
他種々の分野にエツチング処理技術が応用されて
いるが、例えば太陽電池のエツチングプロセスに
於いては、表面処理用エツチング液は高温のアル
カリ性溶液が使用されている。即ち、エツチング
槽内にカセイソーダ溶液等のアルカリ性エツチン
グ液を収納してこのエツチング液を高温保持し、
表面洗浄、乾燥、マスク形成等の前処理を施され
た太陽電池素子をエツチング液に浸漬してエツチ
ング液または太陽電池素子を揺動させながら所定
時間保持した後、太陽電池素子をエツチング槽か
ら引き上げることにより、太陽電池素子のエツチ
ングが行なわれる。しかしながら、このエツチン
グプロセスに於いてはエツチング液が高温に保持
されるため、エツチング槽からのエツチング液の
蒸発が激しく、多大のエツチング液を必要とする
という問題点があり、またエツチング液を高温に
保持するために多くの熱エネルギーが消費される
結果となる。
Etching processing technology is applied to various fields such as microfabrication of semiconductor devices such as solar cells, wiring formation of printed circuit boards, electrode formation of display cells, etc. For example, in the etching process of solar cells, surface treatment The etching solution used is a high temperature alkaline solution. That is, an alkaline etching solution such as a caustic soda solution is stored in an etching tank, and this etching solution is maintained at a high temperature.
A solar cell element that has undergone pretreatment such as surface cleaning, drying, and mask formation is immersed in an etching solution and held for a predetermined time while shaking the etching solution or the solar cell element, and then the solar cell element is pulled out of the etching bath. As a result, the solar cell element is etched. However, in this etching process, the etching solution is kept at a high temperature, so there is a problem that the etching solution evaporates rapidly from the etching bath, requiring a large amount of etching solution. This results in a lot of thermal energy being consumed for retention.

揮発性液体を収納した開口タンクの液体表面か
らの蒸発を防ぐ技術としては特公昭46−28401号
に示されている如く、液体表面に球体を稠密に浮
遊させる方式が知られている。この方式は中空球
体に回転阻止用の円周縁を形成するとともにこの
中空球体を揮発性液体に多数個浮遊させ、第1図
に平面図として示す如く開口タンク1に収納され
た揮発性液体2の表面を中空球体3で被うことに
より液体2表面からの蒸発を防止するとともに液
面の凍結防止あるいは保温効果を得るものであ
る。しかしながら、この方式に於いても実際には
液体に浮遊する中空球体の配列間隙より多量の液
体が蒸発し、また保温効果も充分に達成すること
はできない。中空球体の最大径の円周囲が液面と
略々合致していれば最も有効な効果を得ることが
できると思われるが、多数の中空球体をこのよう
な状態で浮遊させるように作製することは精密加
工を必要とし、非常に困難である。また液体を加
熱することにより比重が変わるものについては浮
遊レベルを一定に維持することができない。以上
の理由により上記方式をエツチング処理装置の如
き表面処理装置に適用しても化学溶液の蒸発防止
及び保温効果の実を上げるには不完全である。
As a technique for preventing evaporation from the liquid surface of an open tank containing a volatile liquid, a method is known in which spheres are suspended densely on the liquid surface, as shown in Japanese Patent Publication No. 28401/1983. In this method, a circumferential edge for preventing rotation is formed on a hollow sphere, and a large number of these hollow spheres are suspended in a volatile liquid, and a volatile liquid 2 stored in an open tank 1 is suspended as shown in a plan view in FIG. By covering the surface with the hollow spheres 3, evaporation from the surface of the liquid 2 is prevented, and the liquid surface is prevented from freezing or has a heat retaining effect. However, even in this method, a larger amount of liquid actually evaporates than the space between the hollow spheres floating in the liquid, and a sufficient heat retention effect cannot be achieved. It is thought that the most effective effect can be obtained if the circumference of the maximum diameter of the hollow sphere approximately matches the liquid level, but it is not possible to create a large number of hollow spheres in such a way that they are suspended. requires precision machining and is extremely difficult. Furthermore, it is not possible to maintain a constant floating level for liquids whose specific gravity changes by heating them. For the above reasons, even if the above method is applied to a surface treatment apparatus such as an etching treatment apparatus, it is insufficient to prevent evaporation of a chemical solution and to achieve a heat retaining effect.

本考案は上記現状に鑑み、技術的手段を駆使す
ることにより表面処理用溶液の蒸発を大幅に抑制
しかつ高温保持のための熱エネルギーの消費を著
しく低減することのできる新規有用な表面処理装
置を提供することを目的とするものである。
In view of the above-mentioned current situation, the present invention is a new and useful surface treatment device that can significantly suppress the evaporation of surface treatment solutions and significantly reduce the consumption of thermal energy for maintaining high temperatures by making full use of technical means. The purpose is to provide the following.

以下本考案を実施例に従つて図面を参照しなが
ら詳説する。
Hereinafter, the present invention will be explained in detail according to embodiments with reference to the drawings.

第2図は本考案の1実施例を示すエツチング処
理装置の要部斜視図である。
FIG. 2 is a perspective view of essential parts of an etching processing apparatus showing one embodiment of the present invention.

槽4にエツチング液5を収納し、外部加熱ヒー
タ(図示せず)でこのエツチング液5を加熱す
る。エツチング液5の液面には4フツ化エチレン
等の化学薬品に対して安定な軽量部材から成る立
方体形状のシールブロツク6が稠密配列されてい
る。また槽4には駆動源に連結された揺動棒7の
先端支持脚8に釣支された撹拌翼(図示せず)が
エツチング液5内に揺動可能に配設されている。
図中に矢印で示す如く揺動棒7が上下動すること
によつて撹拌翼が連動され、エツチング液5が撹
拌される。
Etching liquid 5 is stored in tank 4, and is heated by an external heater (not shown). On the surface of the etching liquid 5, cubic seal blocks 6 made of a lightweight material that is stable against chemicals such as tetrafluoroethylene are densely arranged. Further, in the tank 4, a stirring blade (not shown) suspended from the tip support leg 8 of a swing rod 7 connected to a drive source is swingably disposed within the etching liquid 5.
As the rocking rod 7 moves up and down as shown by arrows in the figure, the stirring blades are interlocked and the etching liquid 5 is stirred.

第3図は揺動棒7を除去した第2図のエツチン
グ処理装置の平面図である。また第4図はシール
ブロツク6の詳細形状を示す斜視図である。
FIG. 3 is a plan view of the etching processing apparatus of FIG. 2 with the swing rod 7 removed. FIG. 4 is a perspective view showing the detailed shape of the seal block 6.

エツチング液5をエツチング温度に加熱保持
し、エツチングすべき太陽電池素子をエツチング
液5に浸漬する。次に揺動棒7を垂下して撹拌翼
をエツチング液5中に配設し、エツチング液5の
液面にシールブロツク6を支持脚8付近を残して
隙間なく稠密浮遊させる。揺動棒7を駆動してエ
ツチング液5を撹拌しながら所定時間太陽電池素
子をエツチングした後、槽4からこの太陽電池素
子を取り出すことによりエツチング処理が行なわ
れる。
The etching liquid 5 is heated and maintained at the etching temperature, and the solar cell element to be etched is immersed in the etching liquid 5. Next, the swinging rod 7 is hung down to place the stirring blade in the etching liquid 5, and the seal block 6 is densely suspended on the surface of the etching liquid 5, leaving the vicinity of the support leg 8, without any gaps. After etching the solar cell element for a predetermined time while stirring the etching liquid 5 by driving the rocking rod 7, the solar cell element is taken out from the bath 4 to perform the etching process.

尚、撹拌翼を使用せず、揺動棒7の支持脚8に
載置台を取り付け、この載置台上に直接エツチン
グされるべき太陽電池素子等を載置してエツチン
グ液5中で載置台を上下揺動させる構成としても
良い。また撹拌等を必要としないエツチング処理
に際しては第3図に示す如く液面全てをシールブ
ロツク6でコートすることとする。
In addition, without using a stirring blade, a mounting table is attached to the support leg 8 of the rocking rod 7, and the solar cell element to be etched is placed directly on this mounting table, and the mounting table is placed in the etching solution 5. It may also be configured to swing up and down. Further, in the etching process which does not require stirring or the like, the entire liquid surface is coated with a seal block 6 as shown in FIG.

シールブロツク6はエツチング液5より比重の
軽い材料で形成されており、精密加工を必要とす
ることなく形状寸法を揃えることのみによつて多
数の同一浮遊体を作製することができる。またこ
れの浮遊配列に際しては隙間をほとんど皆無とす
ることができ、エツチング液5の略々全面を被う
ことができるため、エツチング液5の蒸発が大幅
に抑制される。シールブロツク6の特定の1面の
みを重くするようにすれば常時同一の面を液面上
へ配置することができる。
The seal block 6 is made of a material whose specific gravity is lighter than that of the etching liquid 5, and a large number of identical floating bodies can be manufactured by simply aligning the shapes and dimensions without requiring precision machining. In addition, when these are arranged in a floating manner, there are almost no gaps, and almost the entire surface of the etching liquid 5 can be covered, so that evaporation of the etching liquid 5 is greatly suppressed. By making only one specific surface of the seal block 6 heavy, the same surface can always be placed above the liquid surface.

シールブロツク6の形状は六方体に限定される
ものではなく、第5図A,B,Cに示す如く、正
四面体、四角柱、正角柱その他種々の形状のもの
とすることができる。
The shape of the seal block 6 is not limited to a hexagonal shape, but can be a regular tetrahedron, a square prism, a regular prism, and various other shapes as shown in FIGS. 5A, B, and C.

以上詳説した如く本考案は、エツチング処理装
置、電解研磨装置、化学的洗浄装置その他種々の
化学溶液を使用した表面処理装置に於いて、多面
体を化学溶液の液面に稠密配列することにより、
液面をほとんど隙間なく密閉することができ、溶
液温度の上昇に伴なつて比重が変化し、シールブ
ロツク6の液面からの表出長(浮遊レベル)が変
動してもこの密閉状態は維持されることとなるた
め、溶液の蒸発が大幅に抑制されかつ高温保持に
際しての消費エネルギーを著しく低減する効果が
得られる。また溶液の飛散の防止、湿気侵入の防
止を計ることもできる。更にエツチング処理部材
の槽への挿脱に際してシールブロツクは取り外し
する必要がなく、常に液面に浮遊させた状態で連
続的に表面処理を実行することできるため、自動
化に最適の技術となる。
As explained in detail above, the present invention can be used in etching processing equipment, electrolytic polishing equipment, chemical cleaning equipment, and other surface treatment equipment that uses various chemical solutions by arranging polyhedrons densely on the surface of the chemical solution.
The liquid surface can be sealed with almost no gaps, and this sealed state is maintained even if the specific gravity changes as the solution temperature rises and the length of the seal block 6 above the liquid surface (floating level) changes. As a result, the evaporation of the solution is significantly suppressed and the energy consumption during high temperature maintenance is significantly reduced. It can also be used to prevent solution scattering and moisture intrusion. Furthermore, there is no need to remove the seal block when inserting and removing the etching treatment member into the tank, and surface treatment can be performed continuously while the etching member is always suspended on the liquid surface, making it an optimal technology for automation.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の揮発性液体シール方式を説明す
る説明図である。第2図は本考案の1実施例を示
すエツチング処理装置の要部斜視図である。第3
図は第2図のエツチング処理装置の平面図であ
る。第4図はシールブロツクの斜視図である。第
5図はシールブロツクの他の実施例を示す斜視図
である。 4……槽、5……エツチング液、6……シール
ブロツク。
FIG. 1 is an explanatory diagram illustrating a conventional volatile liquid sealing method. FIG. 2 is a perspective view of essential parts of an etching processing apparatus showing one embodiment of the present invention. Third
The figure is a plan view of the etching processing apparatus shown in FIG. 2. FIG. 4 is a perspective view of the seal block. FIG. 5 is a perspective view showing another embodiment of the seal block. 4...tank, 5...etching liquid, 6...seal block.

Claims (1)

【実用新案登録請求の範囲】[Scope of utility model registration request] 表面処理用の化学溶液が収納される槽と、該槽
内で前記化学溶液に浮遊され、前記化学溶液表面
を略々密閉状態とする複数の多面体ブロツクと、
から成り、該多面体ブロツクは隣接するものが相
互に多面体の少なくとも1面で面間接合状態を有
して配設されることを特徴とする表面処理装置。
a tank in which a chemical solution for surface treatment is stored; a plurality of polyhedral blocks suspended in the chemical solution in the tank and keeping the surface of the chemical solution in a substantially sealed state;
2. A surface treatment apparatus comprising: a polyhedral block, wherein adjacent polyhedral blocks are connected to each other on at least one face of the polyhedron.
JP3061282U 1982-03-03 1982-03-03 surface treatment equipment Granted JPS58135465U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3061282U JPS58135465U (en) 1982-03-03 1982-03-03 surface treatment equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3061282U JPS58135465U (en) 1982-03-03 1982-03-03 surface treatment equipment

Publications (2)

Publication Number Publication Date
JPS58135465U JPS58135465U (en) 1983-09-12
JPS6233016Y2 true JPS6233016Y2 (en) 1987-08-24

Family

ID=30042318

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3061282U Granted JPS58135465U (en) 1982-03-03 1982-03-03 surface treatment equipment

Country Status (1)

Country Link
JP (1) JPS58135465U (en)

Also Published As

Publication number Publication date
JPS58135465U (en) 1983-09-12

Similar Documents

Publication Publication Date Title
US5071488A (en) Method for subjecting an object to a liquid treatment
JPH04154122A (en) Apparatus and method for treatment of substrate
KR20100098423A (en) Roller group for transporting thin substrate and method for performing chemical treatment by using the same
JPS6233016Y2 (en)
JPH04114777A (en) Drying of electronic part
JP3145080B2 (en) Automatic etching equipment for glass for thin film transistor liquid crystal display
JPS61228629A (en) Device for surface treatment of thin plate such as wafer
JP3916003B2 (en) Pull-up drying method and drying apparatus
JP2677275B2 (en) Cooling medium
JPH02130827A (en) Method of cleaning semiconductor substrate and apparatus for cleaning
JPS6367735A (en) Substrate dry and substrate container
GB1446636A (en) Treating a printed circuit board so that the conductive areas thereof have a substantially uniform coating of solder thereon
JPS58123730A (en) Semiconductor wafer etching device
CN211867583U (en) Process fixture for multiple square substrate
CN207996607U (en) A kind of high temperature resistance and long service life spherical lithium manganate production high speed dispersor
JP2531239Y2 (en) Lifting jig in hot pure water pulling type drying equipment
JPS60234975A (en) Treatment of platelike body by immersion
US3615954A (en) Treatment of small semiconduct or wafers with etchant
JPH0444321A (en) Substrate transfer carrier
JPH0322427A (en) Drying method for semiconductor substrate
TWI286799B (en) Method and apparatus for treating a substrate surface by bubbling
Toko et al. Electrical characteristics in an excitable element of lipid membrane
JPH067611A (en) Separation of water from material to be washed
Tsuchida et al. Water Flow Improvement by Pinhole Outlet in Batch-Type Wet Cleaning Bath for Large-Diameter Wafers
JPS61214436A (en) Method and device for etching semiconductor wafer