JPS6231924A - Ion source for reactive ion beam etching device - Google Patents
Ion source for reactive ion beam etching deviceInfo
- Publication number
- JPS6231924A JPS6231924A JP60171055A JP17105585A JPS6231924A JP S6231924 A JPS6231924 A JP S6231924A JP 60171055 A JP60171055 A JP 60171055A JP 17105585 A JP17105585 A JP 17105585A JP S6231924 A JPS6231924 A JP S6231924A
- Authority
- JP
- Japan
- Prior art keywords
- envelope
- ion source
- thermocouple
- gas
- plasma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000010884 ion-beam technique Methods 0.000 title claims abstract description 5
- 238000005530 etching Methods 0.000 title claims abstract description 4
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 150000001805 chlorine compounds Chemical class 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 150000002500 ions Chemical class 0.000 abstract description 9
- 239000012530 fluid Substances 0.000 abstract description 3
- 239000007789 gas Substances 0.000 description 11
- 238000000605 extraction Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002954 polymerization reaction product Substances 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Electron Sources, Ion Sources (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の利用分野〕
本発明は、イオン源により作った化学的に活性なビーム
を被加工物に照射し、化学反応とスパッタを利用して、
被加工物表面を微細加工するのに好適な信頼性の高い反
応性イオンビームエツチング装置用イオン源に関する。[Detailed Description of the Invention] [Field of Application of the Invention] The present invention irradiates a workpiece with a chemically active beam produced by an ion source, utilizes a chemical reaction and sputtering, and
The present invention relates to an ion source for a highly reliable reactive ion beam etching device suitable for micromachining the surface of a workpiece.
公開特許公報昭５６−７９９００号、昭５７−１８５６
５３号等に示すようなカスプ磁場を利用したイオン源で
、化合物ガスを電離しプラズマを作ると、化合物ガスの
プラズマ重合反応により、高分子量の絶縁性の生成物が
、プラズマ発生容器の壁面に堆積し、プラズマ発生容器
が直流アーク放電の正電極であるアノードであるため、
放電が不安定になったり、放電しなくなる等イオン源の
基本的な動作上、問題になることがわかった。Published Patent Publication No. 56-79900, 1856-1983
When a compound gas is ionized and plasma is created using an ion source using a cusp magnetic field such as that shown in No. Because the plasma generating vessel is the anode, which is the positive electrode of the DC arc discharge,
It has been found that this causes problems in the basic operation of the ion source, such as the discharge becoming unstable or not being discharged at all.
本発明の目的は、化合物ガスに対しても安定な放電を維
持できるイオン源を提供することにある。An object of the present invention is to provide an ion source that can maintain stable discharge even for compound gases.
前記の公知例に示すようにプラズマ発生容器の外周に多
数の永久磁石を設け、カスプ磁界によりプラズマを開じ
込めた時、永久磁石の磁気性能の劣化を防止するため、
プラズマ発生容器を冷却し、永久磁石の温度上昇が過大
にならないようにしていた。公知例のイオン源は、核融
合の実験用に開発したもので、水素、重水素等のガスを
電離して使用していたために、前記の放電の不安定の問
題はなかった。しかし、化合物ガスを電離すると、プラ
ズマ重合反応等により、絶縁性の重合反応生成物がアノ
ードに堆積し、放電が不安定になる現象を発明した。本
発明はプラズマ発生容器の内壁を充分に高温にすること
により絶縁性の重合反応生成物の堆積を防止することが
でき、安定な放電を維持できるものである。As shown in the above-mentioned known example, in order to prevent deterioration of the magnetic performance of the permanent magnets when a large number of permanent magnets are provided around the outer periphery of the plasma generation container and the plasma is trapped by the cusp magnetic field,
The plasma generation container was cooled to prevent the temperature of the permanent magnet from increasing too much. The known ion sources were developed for nuclear fusion experiments and used ionized gases such as hydrogen and deuterium, so they did not have the above-mentioned problem of unstable discharge. However, when the compound gas is ionized, an insulating polymerization reaction product is deposited on the anode due to plasma polymerization reaction, etc., which makes the discharge unstable. The present invention makes it possible to prevent the deposition of insulating polymerization reaction products by heating the inner wall of the plasma generating container to a sufficiently high temperature, thereby maintaining stable discharge.
以下、本発明の一実施例を図により説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
ガス導入口１より、ＣＦ、あるいは、ＣＦ４とＡｒの混
合ガス等の化合物ガスを含む気体を導入し、円筒のプラ
ズマ発生容器２の中心軸上に設けたヘアピン状のタング
ステンフィラメントを利用したカソード３とアノードを
兼ねるプラズマ発生容器２に直流電圧を印加し、カソー
ド３の熱電子により、上記ガスを電離することで、プラ
ズマを作る。プラズマからイオンを引き出すために、多
数の小穴をあけた引き出し電極５と６により、イオンビ
ームを引き出す。多数の永久磁石７は、プラズマ発生容
器２の外周に沿ってＮ極とＳ極が交互に円筒の中心軸に
向くように設け、ラインカスプ磁界をプラズマ発生容器
２の内側に作る。ヒータ８は、流体を流すパイプで永久
磁石７の列間に配置し、熱電対９の信号により、プラズ
マ発生容器２の温度が９０℃から２００°Ｃ程度になる
ようにヒータ８に流体を流し、プラズマ発生容器２の内
壁を高温にするとともに、永久磁石７の劣化を小さくし
ている。A gas containing a compound gas such as CF or a mixed gas of CF4 and Ar is introduced through the gas inlet 1 to form a cathode 3 using a hairpin-shaped tungsten filament provided on the central axis of a cylindrical plasma generation container 2. A DC voltage is applied to the plasma generating container 2 which also serves as an anode, and the gas is ionized by thermionic electrons of the cathode 3, thereby creating plasma. In order to extract ions from the plasma, an ion beam is extracted by extraction electrodes 5 and 6 having a large number of small holes. A large number of permanent magnets 7 are provided along the outer periphery of the plasma generation container 2 so that their north and south poles alternately face the central axis of the cylinder, creating a line cusp magnetic field inside the plasma generation container 2. The heater 8 is a pipe through which fluid flows, and is placed between the rows of permanent magnets 7, and the fluid is flowed through the heater 8 according to a signal from the thermocouple 9 so that the temperature of the plasma generation container 2 is about 90°C to 200°C. , the inner wall of the plasma generation container 2 is heated to a high temperature, and the deterioration of the permanent magnet 7 is reduced.
本発明によれば、プラズマ発生容器を必要な高温に保持
できるので、絶縁性の高分子生成物の耐着による放電の
不安定化を防止できるので、化合物ガスに対しても、安
定な放電を維持する効果がある。According to the present invention, since the plasma generation container can be maintained at a necessary high temperature, it is possible to prevent unstable discharge due to the adhesion of insulating polymer products, so stable discharge can be achieved even with compound gases. It has the effect of maintaining
図は、本発明の一実施例のイオン源の縦断面図である。
１・・・ガス導入口、２・・・プラズマ発生容器、３・
・・力 ｉソード、５．６・・・引き出し電極、７
・・・永久磁石、８・・・ヒータ、９・・・熱電対。The figure is a longitudinal cross-sectional view of an ion source according to an embodiment of the present invention. 1... Gas inlet, 2... Plasma generation container, 3...
...Force i-sword, 5.6...Extraction electrode, 7
...Permanent magnet, 8...Heater, 9...Thermocouple.
Claims (1)
ドとアノード間の直流放電により電離し、アノードを兼
ねる非磁性のプラズマ発生容器の外周に多数の永久磁石
を備えたイオン原において、プラズマ発生容器に熱電対
等の測温手段を設けたことを特徴とする反応性イオンビ
ームエッチング装置用イオン源。1. Compound gas such as fluorine or chlorine compounds is ionized by direct current discharge between the cathode and anode, and a thermoelectric current is applied to the plasma generation container in an ion source equipped with a large number of permanent magnets around the outer circumference of a non-magnetic plasma generation container that also serves as an anode. An ion source for a reactive ion beam etching apparatus, characterized in that an equal temperature measuring means is provided.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171055A JPS6231924A (en) | 1985-08-05 | 1985-08-05 | Ion source for reactive ion beam etching device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60171055A JPS6231924A (en) | 1985-08-05 | 1985-08-05 | Ion source for reactive ion beam etching device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6231924A true JPS6231924A (en) | 1987-02-10 |
Family
ID=15916235
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60171055A Pending JPS6231924A (en) | 1985-08-05 | 1985-08-05 | Ion source for reactive ion beam etching device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6231924A (en) |
-
1985
- 1985-08-05 JP JP60171055A patent/JPS6231924A/en active Pending
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