JPS62297817A - Production of liquid crystal display device - Google Patents
Production of liquid crystal display deviceInfo
- Publication number
- JPS62297817A JPS62297817A JP14221586A JP14221586A JPS62297817A JP S62297817 A JPS62297817 A JP S62297817A JP 14221586 A JP14221586 A JP 14221586A JP 14221586 A JP14221586 A JP 14221586A JP S62297817 A JPS62297817 A JP S62297817A
- Authority
- JP
- Japan
- Prior art keywords
- photosensitive resin
- liquid crystal
- substrate
- projection
- rubbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229920005989 resin Polymers 0.000 claims abstract description 27
- 239000011347 resin Substances 0.000 claims abstract description 27
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 9
- 239000004744 fabric Substances 0.000 abstract description 6
- 239000011248 coating agent Substances 0.000 description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002952 polymeric resin Substances 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
- G02F1/133711—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers by organic films, e.g. polymeric films
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Liquid Crystal (AREA)
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〔産業上の利用分野〕
本発明は液晶表示装置の製造方法、特に配向層の形成方
法に関する。Detailed Description of the Invention 3. Detailed Description of the Invention [Field of Industrial Application] The present invention relates to a method for manufacturing a liquid crystal display device, particularly to a method for forming an alignment layer.
従来の液晶表示装置の配向層の形成方法としては５ｉＯ
１Ａｕ等の傾斜蒸着法（特開昭４９−１７７４６号）、
又は基板上にポリイミド系高分子樹脂を塗布した後、布
等で一定の方向にラビングする（特開昭５５−１４３５
２５号）等で形成していた。As a conventional method for forming an alignment layer of a liquid crystal display device, 5iO
Inclined evaporation method of 1Au etc. (Japanese Patent Application Laid-open No. 17746/1983),
Alternatively, after coating a polyimide polymer resin on the substrate, rubbing it in a certain direction with cloth etc.
No. 25) etc.
しかし、前述の傾斜蒸着法は、液晶に所定のプレティル
ト角を与えるのに大変有利であるが、反面真空藤着であ
る為、１０−’Ｔｏｒｒ位の高真空が必要であり、又、
基板を傾斜しなければならない為、量産性に乏しいとい
う欠点を有していた。However, although the above-mentioned tilted evaporation method is very advantageous in giving a predetermined pretilt angle to the liquid crystal, on the other hand, since it is a vacuum deposition method, a high vacuum of about 10-'Torr is required.
Since the substrate must be tilted, it has the disadvantage of poor mass productivity.
又、ラビング法は、液晶のプレティルト角を自由に設定
する、特にプレティルト角を大きくするのが困難であっ
た。Furthermore, with the rubbing method, it is difficult to freely set the pretilt angle of the liquid crystal, especially to increase the pretilt angle.
本発明はこのような問題点を解決するもので、その目的
はチルト角の大きな均一配向を提供するところにある。The present invention is intended to solve these problems, and its purpose is to provide uniform alignment with a large tilt angle.
本発明による液晶表示装置の製造方法は、基板の配向層
を形成する工程が、基板上に感光性樹脂を塗布する工程
、前記感光性樹脂をパターニングする工程、さらに前記
感光性樹脂を布等で一定方向にラビング処理する工程か
らなることを特徴とする。The method for manufacturing a liquid crystal display device according to the present invention includes a step of forming an alignment layer on a substrate, a step of applying a photosensitive resin on the substrate, a step of patterning the photosensitive resin, and a step of applying the photosensitive resin with a cloth or the like. It is characterized by a process of rubbing in a certain direction.
さらに、前記感光性樹脂をパターニングする工程が１μ
ｍピッチ以下のパターンを形成する工程、さらに、前記
感光性樹脂をオーバー露光、或いはオーバー現像する工
程からなることを特徴とする。Furthermore, the step of patterning the photosensitive resin is 1 μm.
It is characterized by comprising a step of forming a pattern with a pitch of m or less, and a step of over-exposing or over-developing the photosensitive resin.
本発明の作用を第１図に基づいて説明する。基板１上に
感光性樹脂を塗布し、感光性樹脂被膜２を形成する（第
１図（１））、次にフォトマスク３を用いＵＶでオーバ
ー露光を行ない、感光性樹脂被膜を感光させる（第１図
（ｎ））、次に、専用現像液を用い、オーバー現像を行
なうと、第１図ＣＩ［Ｉ）に示す様に、基板表面に山状
に感光性樹脂被膜が形成される０次に山伏に形成された
感光性樹脂被膜表面を布等で一定方向にラビング処理す
ることによって、山伏の凹凸の一方向側が反対側より大
きくけずられるため、山状の凹凸の形状が方向性を有す
る様になる（第１図（Ｎ））、この場合、山状の凹凸の
形状は、主に、オーバー露光、オーバー現像の時間、ラ
ビングの総圧力によりて決められ、本発明者はそれぞれ
の最適条件を設定せしめ、液晶のプレティルト角θ（第
１）ｇ（Ｖ））を０〜６０″の範囲で制御可能とした。The operation of the present invention will be explained based on FIG. A photosensitive resin is applied onto a substrate 1 to form a photosensitive resin film 2 (FIG. 1 (1)), and then overexposure is performed using UV using a photomask 3 to expose the photosensitive resin film ( FIG. 1(n)), Next, when over-development is performed using a special developer, a mountain-shaped photosensitive resin film is formed on the substrate surface as shown in FIG. 1 CI[I]. Next, by rubbing the surface of the photosensitive resin coating formed on the yamabushi in a certain direction with cloth, etc., one side of the ridges and ridges on the yamabushi is more disfigured than the other side, so that the shape of the ridges and ridges changes in directionality. (Fig. 1 (N)). In this case, the shape of the mountain-like unevenness is mainly determined by the overexposure, overdevelopment time, and total rubbing pressure, and the inventor has By setting the optimum conditions, it was possible to control the pretilt angle θ (first) g(V)) of the liquid crystal in the range of 0 to 60''.
〔実施例１〕
透明１ｌｉｔ極を所定の形状にパターニングした基板上
に感光性耐熱コーティング剤（フォトニース、東し製）
をスピンナーを用い塗布した後、オープンを用いて８０
℃で６０分間プリベータを行なった０次に、大日本スク
リーン製半自動アライナ−を用い、２５ｍＪ／ｃｄの光
量でｌＯ秒゛オーバー露光した。この場合、フォトマス
クは１μｍピンチのドツトパターンのマスクを使用した
０次に前記基板を専用現像液ＤＶ−５０５（東し製）を
用い、オーバー現像時間１２０秒の条件で超音波現像を
行なった０次にイソプロピルアルコールを用い、超音波
リンス、浸漬リンスを各１５秒間行なったこの後、走査
型電子顕微鏡（日立型）でフォトニース表面を観察した
ところ、１μｍピッチの山伏の形状が確認できた０次に
、オープンを用い、３００℃の温度で３０分間キュアを
行なった後、サラシを用いて、総圧カフ０．ｋｇで一定
方向にラビング処理し配向層を形成した。かかる基板を
用いて液晶を挟持し、プレティルト角を測定した結果、
約３０°であった。また、前記基板を用いてスーパーＴ
Ｎ型液晶表示装置を構成しなと−ろ表示領域全面に均一
な配向を有するディスプレイが得られた。[Example 1] A photosensitive heat-resistant coating agent (Photonice, manufactured by Toshi) was applied on a substrate on which a transparent 1 liter electrode was patterned into a predetermined shape.
After applying using a spinner, apply 80% using an open
After 60 minutes of pre-preservation at 0.degree. C., overexposure was performed for 10 seconds at a light intensity of 25 mJ/cd using a semi-automatic aligner manufactured by Dainippon Screen. In this case, a photomask with a 1 μm pinch dot pattern was used. Next, the substrate was subjected to ultrasonic development using a special developer DV-505 (manufactured by Toshi) with an over-development time of 120 seconds. Next, using isopropyl alcohol, ultrasonic rinsing and immersion rinsing were performed for 15 seconds each. After this, the Photonice surface was observed using a scanning electron microscope (Hitachi model), and a 1 μm pitch Yamabushi shape was confirmed. Next, after curing for 30 minutes at a temperature of 300°C using an open cuff, the total pressure cuff was adjusted to 0. kg in a certain direction to form an alignment layer. As a result of sandwiching a liquid crystal using such a substrate and measuring the pretilt angle,
It was about 30°. Moreover, using the above substrate, super T
By constructing an N-type liquid crystal display device, a display having uniform alignment over the entire display area was obtained.
〔実施例２〕
透明電極を所定の形状にパターニングした基板上にポジ
型レジスト（Ａｚ−１３ｓｏＪ、シュプレー製）をスピ
ンナ塗布した後、オープンを用いて、８０℃で２０分間
プリベータを行なった０次にアライナ−を用い２５ｍＪ
／ｃｊの光量で１０秒オーバー露光した。この場合、フ
ォトマスクは実施例１と同様のマスクを使用した０次に
前記基板を現像液ＮＭＤ−３（東京応化製）を用い、オ
ーバー現像時間１２０秒の条件で現像した。次に純水で
リンスを１０分間行なった０次にオープンを用い、１５
０℃の温度で２０分間加熱した後、サラシを用いて総圧
力３０ｋｇで一定方向にラビング処理し配向層を形成し
た。かかる基板を用いて結晶を挟持し、プレティルト角
を測定した結果、約２０°であった。又、実施例１と同
様にスーパーＴＮ型液晶表示装置を構成したところ、実
施例１と同様のディスプレイが得られた。[Example 2] A positive resist (Az-13soJ, manufactured by Spree) was coated with a spinner on a substrate on which a transparent electrode was patterned into a predetermined shape, and then pre-baked at 80°C for 20 minutes using an open resistor. 25mJ using an aligner
Overexposure was performed for 10 seconds at a light intensity of /cj. In this case, a photomask similar to that used in Example 1 was used, and the substrate was then developed using a developer NMD-3 (manufactured by Tokyo Ohka) with an over-development time of 120 seconds. Next, after rinsing with pure water for 10 minutes, use the 0th order open,
After heating at a temperature of 0° C. for 20 minutes, rubbing treatment was performed in a fixed direction using a dry cloth at a total pressure of 30 kg to form an alignment layer. Using such substrates to sandwich a crystal, the pretilt angle was measured to be approximately 20°. Further, when a super TN type liquid crystal display device was constructed in the same manner as in Example 1, a display similar to that in Example 1 was obtained.
〔実施例３〕
オーバー露光時間を５秒、オーバー現像時間を６０秒と
した以外は実施例１と同様に処理した基板を用いて、液
晶を挟持し、プレティルト角を測定した結果、約５０°
であった。[Example 3] Using a substrate treated in the same manner as in Example 1 except that the overexposure time was 5 seconds and the overdevelopment time was 60 seconds, a liquid crystal was sandwiched and the pretilt angle was measured, and the result was approximately 50°.
Met.
〔実施例４〕
オーバー露光時間を２秒、オーバー現像時間を２０秒と
した以外は実施例１と同様に処理した基板を用いて、液
晶を挟持し、プレティルト角を測定した結果、約１０’
″であった。[Example 4] Using a substrate treated in the same manner as in Example 1 except that the overexposure time was 2 seconds and the overdevelopment time was 20 seconds, a liquid crystal was sandwiched and the pretilt angle was measured.
"Met.
〔実施例５〕
ラビングの総圧力を１００ｋｇにした以外は実施例と同
様に処理した基板を用いて、液晶を挟持しプレティルト
角を測定した結果、約２５°であった。[Example 5] Using a substrate treated in the same manner as in Example except that the total rubbing pressure was 100 kg, a liquid crystal was held between the substrates and the pretilt angle was measured, and the result was about 25°.
以上述べた様に本発明によれば、配向層を形成する工程
が、基板上に感光性樹脂を塗布する工程、前記感光性樹
脂をバターニングする工程、さらに前記感光性樹脂表面
を布等で一定方向にラビング処理する工程、さらに、前
記感光性樹脂をバターニングする工程が、ｌｌ１ｍピッ
チ以下のパターンを形成する工程、さらに、前記感光性
樹脂をオーバー露光、或いはオーバー現像する工程から
成ることにより、方向性を有した１μｍ以下の山状の凹
凸が形成される為、傾斜蒸着法の様に量産性を損なうこ
とな（液晶のプレティルト角をＯ〜６０９の範囲で制御
できる。As described above, according to the present invention, the step of forming an alignment layer includes a step of coating a photosensitive resin on a substrate, a step of buttering the photosensitive resin, and a step of covering the surface of the photosensitive resin with a cloth or the like. The step of rubbing in a certain direction, the step of buttering the photosensitive resin, the step of forming a pattern with a pitch of 11 m or less, and the step of overexposing or overdeveloping the photosensitive resin. Since directional mountain-like unevenness of 1 μm or less is formed, the pretilt angle of the liquid crystal can be controlled in the range of 0 to 609° without impairing mass productivity unlike the tilted deposition method.
これにより、本発明は特に近年注目を集めている複屈折
モードを用いた大型大容量表示の液晶表示装置に有効で
ある。As a result, the present invention is particularly effective for large-sized, large-capacity liquid crystal display devices using birefringence mode, which have been attracting attention in recent years.
第１図は本発明の作用を示す模式図。 １・・・・・・・・・基板 ２・・・・・・・・・感光性樹脂 ３・・・・・・・・・フォトマスク ４・・・・・・・・・液晶分子 以 上 FIG. 1 is a schematic diagram showing the effect of the present invention. 1・・・・・・・・・Board 2...Photosensitive resin 3・・・・・・・・・Photomask ４・・・・・・・・・Liquid crystal molecules that's all
Claims (3)
対の基板で液晶を挟持してなる液晶表示装置において、
少なくとも一方の前記配向層を形成する工程が、少なく
とも基板上に感光性樹脂を塗布する工程、該感光性樹脂
をパターニングする工程、及びラビング処理する工程か
ら成ることを特徴とする液晶表示装置の製造方法。(1) In a liquid crystal display device in which a liquid crystal is sandwiched between a pair of substrates each having a transparent electrode on the substrate and an alignment layer on the electrode,
Manufacturing a liquid crystal display device, wherein the step of forming at least one of the alignment layers comprises at least a step of applying a photosensitive resin on a substrate, a step of patterning the photosensitive resin, and a step of performing a rubbing treatment. Method.
くとも１μｍピッチ以下のパターンを形成する工程であ
ることを特徴とする特許請求の範囲第１項記載の液晶表
示装置の製造方法。(2) The method for manufacturing a liquid crystal display device according to claim 1, wherein the step of patterning the photosensitive resin is a step of forming a pattern with a pitch of at least 1 μm or less.
くとも、感光性樹脂をオーバー露光、或いはオーバー現
像する工程から成ることを特徴とする特許請求の範囲第
１項記載の液晶表示装置の製造方法。(3) The method for manufacturing a liquid crystal display device according to claim 1, wherein the step of patterning the photosensitive resin comprises at least a step of overexposing or overdeveloping the photosensitive resin.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14221586A JPS62297817A (en) | 1986-06-18 | 1986-06-18 | Production of liquid crystal display device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14221586A JPS62297817A (en) | 1986-06-18 | 1986-06-18 | Production of liquid crystal display device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS62297817A true JPS62297817A (en) | 1987-12-25 |
Family
ID=15310079
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14221586A Pending JPS62297817A (en) | 1986-06-18 | 1986-06-18 | Production of liquid crystal display device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS62297817A (en) |
-
1986
- 1986-06-18 JP JP14221586A patent/JPS62297817A/en active Pending
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