JPS62294258A - Electrophotographic sensitive body - Google Patents

Electrophotographic sensitive body

Info

Publication number
JPS62294258A
JPS62294258A JP13752686A JP13752686A JPS62294258A JP S62294258 A JPS62294258 A JP S62294258A JP 13752686 A JP13752686 A JP 13752686A JP 13752686 A JP13752686 A JP 13752686A JP S62294258 A JPS62294258 A JP S62294258A
Authority
JP
Japan
Prior art keywords
substrate
al2o3
protective film
layer
photoreceptor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13752686A
Other languages
Japanese (ja)
Inventor
Seizo Kitagawa
清三 北川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP13752686A priority Critical patent/JPS62294258A/en
Publication of JPS62294258A publication Critical patent/JPS62294258A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14Inert intermediate or cover layers for charge-receiving layers
    • G03G5/147Cover layers
    • G03G5/14704Cover layers comprising inorganic material

Abstract

PURPOSE:To easily control film thickness, electrical characteristics and hardness by depositing amorphous aluminum oxide by an ion plating method on the surface. CONSTITUTION:A photosensitive layer is formed on an aluminum substrate by forming a charge transfer layer, charge generating layer and overcoat layer on said substrate. The substrate 1 having such photosensitive layer is disposed in a vacuum vessel 21 and is rotated. The substrate is connected to a DC power source 31. An ionizing power source 24 and a crucible 26 contg. Al2O3 25 are disposed in the vacuum vessel 21. The Al2O3 25 is evaporated by an electron gun 27 and an electron beam 28, by which the Al2O3 vapor is ionized and is ion-plated to the surface of the substrate 1 to form the light transmissive protective film. Since the protective film is formed by the ion plating of the Al2O3, the uniform protective film is quickly formed on the large-area photosensitive body and the wear resistance and durability thereof are improved.

Description

【発明の詳細な説明】[Detailed description of the invention]

3、発明の詳細な説明 3. Detailed description of the invention

【発明の属する技術分野】[Technical field to which the invention pertains]

本発明は、感光体表面の耐久性向上のために金属酸化物
からなる透光性保護膜を設けた電子写真用感光体に関す
る。
The present invention relates to an electrophotographic photoreceptor provided with a transparent protective film made of a metal oxide in order to improve the durability of the surface of the photoreceptor.

【従来技術とその問題点】[Prior art and its problems]

複写機あるいはプリンタに用いられる電子写真用感光体
の性能の向上の一つに長寿命化があり、これは主に感光
体表面の耐久性によって決定される。従来のセレン系材
料1を機化合物あるいはアモルファス・シリコンなどか
らなる感光層を有する感光体表面を保ニジ石を設けるこ
とで耐久性の同体となってはいない、そこで、大幅な耐
久性の向上を目的として、1μ程度の厚さの金属酸化物
の薄膜を、蒸着法あるいはスパッタリング法によって生
成し、感光体に適用することが試みられた。 しかし、前者では後加熱が必要なこと、また後者では生
成に要する時間が長く、生産性が悪いことのほか膜の密
着性および残留電位等の電気特性が悪くなり、感光体と
して用いる場合に支障を来たすことがある。
One of the improvements in the performance of electrophotographic photoreceptors used in copiers or printers is longer life, which is mainly determined by the durability of the photoreceptor surface. The durability of conventional selenium-based materials 1 is not the same by providing a photoreceptor surface with a photoreceptor layer made of an organic compound or amorphous silicon. For this purpose, attempts have been made to produce a thin film of metal oxide with a thickness of about 1 μm by vapor deposition or sputtering and apply it to a photoreceptor. However, the former requires post-heating, and the latter takes a long time to form, resulting in poor productivity and poor electrical properties such as film adhesion and residual potential, which poses problems when used as a photoreceptor. may occur.

【発明の目的】[Purpose of the invention]

本発明は、上述の欠点を除去し、感光体表面に密着して
短時間に、かつi厚、電気特性および硬度等を容易に制
御可能に生成できる強固な透光性保ffl膜を有する電
子写真用感光体を提供するこ、とを目的とする。
The present invention eliminates the above-mentioned drawbacks and provides an electronic film having a strong light-transmitting retentive film that can be formed in close contact with the surface of a photoreceptor in a short time and with easy control of i-thickness, electrical properties, hardness, etc. The purpose is to provide a photographic photoreceptor.

【発明の要点】[Key points of the invention]

本発明は、感光体表面をイオンプレーティング法により
被着されたアモルファス・酸化アルミニウムからなる透
光性薄膜で覆うことによって上記の目的を達成するもの
である。
The present invention achieves the above object by covering the surface of a photoreceptor with a transparent thin film made of amorphous aluminum oxide deposited by ion plating.

【発明の実施例】[Embodiments of the invention]

第1図は本発明の一実施例の断面構造を示し、lFk 
120m、 長さ2601のアルミニウム円筒基体1の
上に無定形5e−Te合金の蒸着によって形成された電
荷輸送rfi2.電荷発生層3.オーバコート14の3
層からなる厚さ55−の感光層を有する。 この上に第2図に示す装置を用いて2000人の厚さの
AIhos膜5を30人/秒の成膜速度でイオンプレー
ティングした。第2図に示す装置において、真空容器2
1にはガス導入口22.排気口23が設けられている。 真空容器1内で回転軸23により回転する支持体上に複
数(図では8本)のM基体lが支持され、直流i[31
に接続されている。さらに容器1内には直流′rIl源
32に接続されたイオン化電極24゜A7xOs25を
収容したるつぼ26が配され、電#31゜32の他側お
よびるつぼ26は接地されている。uzoxは、電子銃
27から発して図示しない偏向コイルによって270@
偏向された電子ビーム2日によって照射されて蒸発する
。容951内にガス導入口22からアルゴンガスを導入
し、排気口23からの排気して約5.7 X 10−”
Paの放電真空度にし、電tA32により約50Vの電
圧を印加したTLLP01Aj、Q、i発源26との間
で放電を発生させ、7発したり20.の一部をイオン化
させる。イオンを混入した。Q、Q、i気は’tiE1
31により印加される電圧により加速されて基体表面に
付着し、保ff1i5を形成する。 得られた感光体の電気特性を調べたところ、保護膜5形
成前とほとんど変わらなかった。また画像特性も同様で
あった。耐久性について操り返し印字による摩耗試験お
よび50℃における高温放置による結晶化試験によって
調べたところ、イオンプレーティングにょろり、0.膜
5を有する感光体は従来の感光体の30倍以上の耐摩耗
性および5倍以上の結晶化寿命を持つことが判明した。 、VtO。 膜5の構造は、X線回折により調べたところ、アモルフ
ァスであることが分かった。また化学的組成は、X線電
子分光法で調べた結果、はぼ化学量論的組成になってい
ることが判明した。硬度は、ダイナミック硬さでおよそ
3000であった。 第3図は別の実施例の断面構造を示し、直径120鶴1
長さ330鶴のA77層1の上に無定形5e−As合金
の蒸着によって形成された55mの厚さの電荷発生・輸
送N6を有する複写機用単N構造感光体である。この感
光体表面の保護膜5として、第2図のイオンプレーティ
ング装置を用い、2.7 X 10−’Pa、 3−3
 ×10−”Paおよび5.3 X 10−”Paの三
つの雰囲気中でイオン化1!極電圧は50■と一定し、
成膜速度を26.30.34人/秒と変えて2000〜
16000人のAltos膜を形成した。 得られた感光性の電気特性を調べたところ従来品と変わ
らなかった。また成膜条件による差はなかった。室温で
の画像特性も従来品に対して遜色がなかった。その中で
高真空処理で膜厚の薄いものほど優れた画像特性を示し
た。高真空処理で膜厚の薄いものは、32℃、85%の
高温高温室での繰り返し印字試験における画質の低下が
少ない、耐摩耗性、耐結晶化性の向上は最初の実施例と
同様であり、得られた膜も同様にアモルファス構造で化
学量論的組成を有していた。硬度は高真空処理のものほ
ど高く、また例えば180℃、1時間のアニーリングを
行うと硬度が上昇することが分かった。 【発明の効果] 本発明によれば、電子写真用感光体の保護膜をU 、O
,のイオンプレーティングにより形成することにより、
大面積の感光体表面に均一な透光性保護膜を低温で短時
間に得ることができる。この膜により、感光体の電気特
性を撰なうことなく、耐摩耗性および耐結晶化性などの
耐久性のめざましい向上が実現し、5s−Te、 5s
−Asなどのセレン系感光体に限らず、他の感光体、例
えば有機化合物感光体あるいはアモルファス・シリコン
感光体についても十分作動に適用できる。
FIG. 1 shows a cross-sectional structure of an embodiment of the present invention, and shows lFk
A charge transport rfi2. formed by vapor deposition of an amorphous 5e-Te alloy on an aluminum cylindrical substrate 1 of 120 m and length 2601. Charge generation layer 3. Overcoat 14-3
The photosensitive layer has a thickness of 55 cm. On top of this, an AIhos film 5 having a thickness of 2,000 layers was ion-plated using the apparatus shown in FIG. 2 at a deposition rate of 30 layers/second. In the apparatus shown in FIG.
1 has a gas inlet 22. An exhaust port 23 is provided. A plurality of (eight in the figure) M substrates l are supported on a support body rotated by a rotating shaft 23 in the vacuum container 1, and a direct current i[31
It is connected to the. Furthermore, a crucible 26 containing an ionizing electrode 24°A7xOs25 connected to a direct current source 32 is disposed within the container 1, and the other side of the electrode 31°32 and the crucible 26 are grounded. uzox is emitted from the electron gun 27 and deflected to 270@ by a deflection coil (not shown).
It is irradiated with a deflected electron beam and evaporated. Argon gas is introduced into the chamber 951 from the gas inlet 22 and exhausted from the exhaust port 23 to form a container 951 of approximately 5.7 x 10-"
A discharge vacuum level of Pa and a voltage of about 50 V applied by the electric tA32 are generated between the TLLP01Aj, Q, and i source 26 to generate 7 or 20. ionizes a portion of the ions were mixed. Q, Q, I'tiE1
It is accelerated by the voltage applied by 31 and adheres to the substrate surface, forming a retainer ff1i5. When the electrical properties of the obtained photoreceptor were examined, they were almost the same as before the formation of the protective film 5. The image characteristics were also similar. Durability was investigated by an abrasion test using repeated printing and a crystallization test by leaving it at a high temperature at 50°C. It has been found that the photoreceptor with Film 5 has more than 30 times the abrasion resistance and more than 5 times the crystallization life of conventional photoreceptors. ,VtO. The structure of the film 5 was examined by X-ray diffraction and was found to be amorphous. Further, as a result of examining the chemical composition using X-ray electron spectroscopy, it was found that the composition was approximately stoichiometric. The hardness was approximately 3000 in terms of dynamic hardness. Figure 3 shows the cross-sectional structure of another embodiment, with a diameter of 120 mm and 1 mm.
This is a single N structure photoreceptor for a copying machine having a 55 m thick charge generation/transport N6 formed by vapor deposition of an amorphous 5e-As alloy on an A77 layer 1 with a length of 330 m. The protective film 5 on the surface of the photoreceptor was formed using the ion plating apparatus shown in FIG.
Ionization 1 in three atmospheres: × 10-” Pa and 5.3 × 10-” Pa! The pole voltage is constant at 50■,
2000~ by changing the film formation speed to 26.30.34 people/sec.
16,000 Altos membranes were formed. When the electrical properties of the resulting photosensitive material were examined, they were no different from those of conventional products. Moreover, there was no difference depending on the film forming conditions. The image characteristics at room temperature were also comparable to conventional products. Among them, the thinner the film in high vacuum processing, the better the image characteristics. Thin film processed by high vacuum processing shows less deterioration in image quality in repeated printing tests in a high temperature room at 32°C and 85%, and the improvement in abrasion resistance and crystallization resistance is the same as in the first example. The obtained film also had an amorphous structure and a stoichiometric composition. It has been found that the hardness increases as the material undergoes high vacuum treatment, and that the hardness increases when annealing is performed at 180° C. for 1 hour, for example. [Effects of the Invention] According to the present invention, the protective film of an electrophotographic photoreceptor is
By forming by ion plating of ,
A uniform light-transmitting protective film can be formed on a large-area photoreceptor surface at low temperatures in a short time. This film achieves remarkable improvements in durability such as abrasion resistance and crystallization resistance without changing the electrical properties of the photoreceptor.
The present invention is applicable not only to selenium-based photoreceptors such as -As but also to other photoreceptors, such as organic compound photoreceptors or amorphous silicon photoreceptors.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の部分断面図、第2図は本発
明の実施例の型造に用いられるイオンプレーティング装
置、第3図は本発明の別の実施例の部分断面図である。 1:AI凸体、2:電荷輸送層、3:電荷発生層、4ニ
オ−バコード層、5:、V、O,保護膜、6:電荷発生
・輸送層、21:真空容器、24:イオン化電源、25
: A7.o、 、28:電子ビーム。 第3図
FIG. 1 is a partial sectional view of one embodiment of the present invention, FIG. 2 is an ion plating apparatus used for molding the embodiment of the present invention, and FIG. 3 is a partial sectional view of another embodiment of the present invention. It is. 1: AI convex body, 2: Charge transport layer, 3: Charge generation layer, 4 Niobacode layer, 5: V, O, protective film, 6: Charge generation/transport layer, 21: Vacuum container, 24: Ionization power supply, 25
: A7. o, , 28: Electron beam. Figure 3

Claims (1)

【特許請求の範囲】[Claims] 1)表面がイオンプレーティング法により被着されたア
モルファス・酸化アルミニウムからなる透光性薄膜で覆
われたことを特徴とする電子写真用感光体。
1) An electrophotographic photoreceptor whose surface is covered with a transparent thin film made of amorphous aluminum oxide deposited by an ion plating method.
JP13752686A 1986-06-13 1986-06-13 Electrophotographic sensitive body Pending JPS62294258A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13752686A JPS62294258A (en) 1986-06-13 1986-06-13 Electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13752686A JPS62294258A (en) 1986-06-13 1986-06-13 Electrophotographic sensitive body

Publications (1)

Publication Number Publication Date
JPS62294258A true JPS62294258A (en) 1987-12-21

Family

ID=15200737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13752686A Pending JPS62294258A (en) 1986-06-13 1986-06-13 Electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS62294258A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328097A2 (en) * 1988-02-10 1989-08-16 Fuji Xerox Co., Ltd. Method for producing electrophotographic photoreceptor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0328097A2 (en) * 1988-02-10 1989-08-16 Fuji Xerox Co., Ltd. Method for producing electrophotographic photoreceptor

Similar Documents

Publication Publication Date Title
US4170662A (en) Plasma plating
US5436035A (en) Coating a substrate surface with a permeation barrier
US4673475A (en) Dual ion beam deposition of dense films
JPS61164219A (en) Apparatus for manufacturing thin-film transistor array
US4997673A (en) Method of forming aluminum nitride films by ion-assisted evaporation
JPS62294258A (en) Electrophotographic sensitive body
US3984585A (en) Vacuum evaporation plating method
US5264256A (en) Apparatus and process for glow discharge comprising substrate temperature control by shutter adjustment
JPS62254158A (en) Production of electrophotographic sensitive body
US5024721A (en) Method of forming metal surface thin film having high corrosion resistance and high adhesion
JPH0656501B2 (en) Method for producing photosensitive material having overcoat layer
JPS5934299B2 (en) Photosensitive material having a photoconductive layer with a transparent film and its manufacturing method
US3711326A (en) Promethium sources
JPH06200366A (en) Thin-film device and method for forming the device
JPH0229746B2 (en) FUKUSUNOJOHATSUGENOSONAETAIONPUREETEINGUSOCHI
US3723278A (en) Method of depositing hafnium-tantalum nitride layer by reactive sputtering
JP2000038663A (en) Magnetron sputtering device
JP2817164B2 (en) Electrophotographic photoreceptor
US3901783A (en) Method of producing selenium charge electrophotographic recording plates
JPS6112992B2 (en)
JPH10330935A (en) Sputtering device
JPH05112863A (en) Formation of thin film
JPS6428366A (en) Crucible of vacuum deposition device
JPS5855037A (en) Vapor depositing device
JPS59226176A (en) Ion plating device