JPS62294258A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPS62294258A JPS62294258A JP13752686A JP13752686A JPS62294258A JP S62294258 A JPS62294258 A JP S62294258A JP 13752686 A JP13752686 A JP 13752686A JP 13752686 A JP13752686 A JP 13752686A JP S62294258 A JPS62294258 A JP S62294258A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- al2o3
- protective film
- layer
- photoreceptor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007733 ion plating Methods 0.000 claims abstract description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 3
- 108091008695 photoreceptors Proteins 0.000 claims description 24
- 239000010409 thin film Substances 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 abstract description 9
- 239000000758 substrate Substances 0.000 abstract description 8
- 238000010894 electron beam technology Methods 0.000 abstract description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 2
- 238000000151 deposition Methods 0.000 abstract description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 4
- 229910052593 corundum Inorganic materials 0.000 abstract 4
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 4
- 239000010408 film Substances 0.000 description 17
- 238000005299 abrasion Methods 0.000 description 4
- 238000002425 crystallisation Methods 0.000 description 4
- 230000008025 crystallization Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 101100481404 Danio rerio tie1 gene Proteins 0.000 description 1
- 101100481406 Mus musculus Tie1 gene Proteins 0.000 description 1
- 229910001215 Te alloy Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009489 vacuum treatment Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/147—Cover layers
- G03G5/14704—Cover layers comprising inorganic material
Abstract
Description
3、発明の詳細な説明 3. Detailed description of the invention
本発明は、感光体表面の耐久性向上のために金属酸化物
からなる透光性保護膜を設けた電子写真用感光体に関す
る。The present invention relates to an electrophotographic photoreceptor provided with a transparent protective film made of a metal oxide in order to improve the durability of the surface of the photoreceptor.
複写機あるいはプリンタに用いられる電子写真用感光体
の性能の向上の一つに長寿命化があり、これは主に感光
体表面の耐久性によって決定される。従来のセレン系材
料1を機化合物あるいはアモルファス・シリコンなどか
らなる感光層を有する感光体表面を保ニジ石を設けるこ
とで耐久性の同体となってはいない、そこで、大幅な耐
久性の向上を目的として、1μ程度の厚さの金属酸化物
の薄膜を、蒸着法あるいはスパッタリング法によって生
成し、感光体に適用することが試みられた。
しかし、前者では後加熱が必要なこと、また後者では生
成に要する時間が長く、生産性が悪いことのほか膜の密
着性および残留電位等の電気特性が悪くなり、感光体と
して用いる場合に支障を来たすことがある。One of the improvements in the performance of electrophotographic photoreceptors used in copiers or printers is longer life, which is mainly determined by the durability of the photoreceptor surface. The durability of conventional selenium-based materials 1 is not the same by providing a photoreceptor surface with a photoreceptor layer made of an organic compound or amorphous silicon. For this purpose, attempts have been made to produce a thin film of metal oxide with a thickness of about 1 μm by vapor deposition or sputtering and apply it to a photoreceptor. However, the former requires post-heating, and the latter takes a long time to form, resulting in poor productivity and poor electrical properties such as film adhesion and residual potential, which poses problems when used as a photoreceptor. may occur.
本発明は、上述の欠点を除去し、感光体表面に密着して
短時間に、かつi厚、電気特性および硬度等を容易に制
御可能に生成できる強固な透光性保ffl膜を有する電
子写真用感光体を提供するこ、とを目的とする。The present invention eliminates the above-mentioned drawbacks and provides an electronic film having a strong light-transmitting retentive film that can be formed in close contact with the surface of a photoreceptor in a short time and with easy control of i-thickness, electrical properties, hardness, etc. The purpose is to provide a photographic photoreceptor.
本発明は、感光体表面をイオンプレーティング法により
被着されたアモルファス・酸化アルミニウムからなる透
光性薄膜で覆うことによって上記の目的を達成するもの
である。The present invention achieves the above object by covering the surface of a photoreceptor with a transparent thin film made of amorphous aluminum oxide deposited by ion plating.
第1図は本発明の一実施例の断面構造を示し、lFk
120m、 長さ2601のアルミニウム円筒基体1の
上に無定形5e−Te合金の蒸着によって形成された電
荷輸送rfi2.電荷発生層3.オーバコート14の3
層からなる厚さ55−の感光層を有する。
この上に第2図に示す装置を用いて2000人の厚さの
AIhos膜5を30人/秒の成膜速度でイオンプレー
ティングした。第2図に示す装置において、真空容器2
1にはガス導入口22.排気口23が設けられている。
真空容器1内で回転軸23により回転する支持体上に複
数(図では8本)のM基体lが支持され、直流i[31
に接続されている。さらに容器1内には直流′rIl源
32に接続されたイオン化電極24゜A7xOs25を
収容したるつぼ26が配され、電#31゜32の他側お
よびるつぼ26は接地されている。uzoxは、電子銃
27から発して図示しない偏向コイルによって270@
偏向された電子ビーム2日によって照射されて蒸発する
。容951内にガス導入口22からアルゴンガスを導入
し、排気口23からの排気して約5.7 X 10−”
Paの放電真空度にし、電tA32により約50Vの電
圧を印加したTLLP01Aj、Q、i発源26との間
で放電を発生させ、7発したり20.の一部をイオン化
させる。イオンを混入した。Q、Q、i気は’tiE1
31により印加される電圧により加速されて基体表面に
付着し、保ff1i5を形成する。
得られた感光体の電気特性を調べたところ、保護膜5形
成前とほとんど変わらなかった。また画像特性も同様で
あった。耐久性について操り返し印字による摩耗試験お
よび50℃における高温放置による結晶化試験によって
調べたところ、イオンプレーティングにょろり、0.膜
5を有する感光体は従来の感光体の30倍以上の耐摩耗
性および5倍以上の結晶化寿命を持つことが判明した。
、VtO。
膜5の構造は、X線回折により調べたところ、アモルフ
ァスであることが分かった。また化学的組成は、X線電
子分光法で調べた結果、はぼ化学量論的組成になってい
ることが判明した。硬度は、ダイナミック硬さでおよそ
3000であった。
第3図は別の実施例の断面構造を示し、直径120鶴1
長さ330鶴のA77層1の上に無定形5e−As合金
の蒸着によって形成された55mの厚さの電荷発生・輸
送N6を有する複写機用単N構造感光体である。この感
光体表面の保護膜5として、第2図のイオンプレーティ
ング装置を用い、2.7 X 10−’Pa、 3−3
×10−”Paおよび5.3 X 10−”Paの三
つの雰囲気中でイオン化1!極電圧は50■と一定し、
成膜速度を26.30.34人/秒と変えて2000〜
16000人のAltos膜を形成した。
得られた感光性の電気特性を調べたところ従来品と変わ
らなかった。また成膜条件による差はなかった。室温で
の画像特性も従来品に対して遜色がなかった。その中で
高真空処理で膜厚の薄いものほど優れた画像特性を示し
た。高真空処理で膜厚の薄いものは、32℃、85%の
高温高温室での繰り返し印字試験における画質の低下が
少ない、耐摩耗性、耐結晶化性の向上は最初の実施例と
同様であり、得られた膜も同様にアモルファス構造で化
学量論的組成を有していた。硬度は高真空処理のものほ
ど高く、また例えば180℃、1時間のアニーリングを
行うと硬度が上昇することが分かった。
【発明の効果]
本発明によれば、電子写真用感光体の保護膜をU 、O
,のイオンプレーティングにより形成することにより、
大面積の感光体表面に均一な透光性保護膜を低温で短時
間に得ることができる。この膜により、感光体の電気特
性を撰なうことなく、耐摩耗性および耐結晶化性などの
耐久性のめざましい向上が実現し、5s−Te、 5s
−Asなどのセレン系感光体に限らず、他の感光体、例
えば有機化合物感光体あるいはアモルファス・シリコン
感光体についても十分作動に適用できる。FIG. 1 shows a cross-sectional structure of an embodiment of the present invention, and shows lFk
A charge transport rfi2. formed by vapor deposition of an amorphous 5e-Te alloy on an aluminum cylindrical substrate 1 of 120 m and length 2601. Charge generation layer 3. Overcoat 14-3
The photosensitive layer has a thickness of 55 cm. On top of this, an AIhos film 5 having a thickness of 2,000 layers was ion-plated using the apparatus shown in FIG. 2 at a deposition rate of 30 layers/second. In the apparatus shown in FIG.
1 has a gas inlet 22. An exhaust port 23 is provided. A plurality of (eight in the figure) M substrates l are supported on a support body rotated by a rotating shaft 23 in the vacuum container 1, and a direct current i[31
It is connected to the. Furthermore, a crucible 26 containing an ionizing electrode 24°A7xOs25 connected to a direct current source 32 is disposed within the container 1, and the other side of the electrode 31°32 and the crucible 26 are grounded. uzox is emitted from the electron gun 27 and deflected to 270@ by a deflection coil (not shown).
It is irradiated with a deflected electron beam and evaporated. Argon gas is introduced into the chamber 951 from the gas inlet 22 and exhausted from the exhaust port 23 to form a container 951 of approximately 5.7 x 10-"
A discharge vacuum level of Pa and a voltage of about 50 V applied by the electric tA32 are generated between the TLLP01Aj, Q, and i source 26 to generate 7 or 20. ionizes a portion of the ions were mixed. Q, Q, I'tiE1
It is accelerated by the voltage applied by 31 and adheres to the substrate surface, forming a retainer ff1i5. When the electrical properties of the obtained photoreceptor were examined, they were almost the same as before the formation of the protective film 5. The image characteristics were also similar. Durability was investigated by an abrasion test using repeated printing and a crystallization test by leaving it at a high temperature at 50°C. It has been found that the photoreceptor with Film 5 has more than 30 times the abrasion resistance and more than 5 times the crystallization life of conventional photoreceptors. ,VtO. The structure of the film 5 was examined by X-ray diffraction and was found to be amorphous. Further, as a result of examining the chemical composition using X-ray electron spectroscopy, it was found that the composition was approximately stoichiometric. The hardness was approximately 3000 in terms of dynamic hardness. Figure 3 shows the cross-sectional structure of another embodiment, with a diameter of 120 mm and 1 mm.
This is a single N structure photoreceptor for a copying machine having a 55 m thick charge generation/transport N6 formed by vapor deposition of an amorphous 5e-As alloy on an A77 layer 1 with a length of 330 m. The protective film 5 on the surface of the photoreceptor was formed using the ion plating apparatus shown in FIG.
Ionization 1 in three atmospheres: × 10-” Pa and 5.3 × 10-” Pa! The pole voltage is constant at 50■,
2000~ by changing the film formation speed to 26.30.34 people/sec.
16,000 Altos membranes were formed. When the electrical properties of the resulting photosensitive material were examined, they were no different from those of conventional products. Moreover, there was no difference depending on the film forming conditions. The image characteristics at room temperature were also comparable to conventional products. Among them, the thinner the film in high vacuum processing, the better the image characteristics. Thin film processed by high vacuum processing shows less deterioration in image quality in repeated printing tests in a high temperature room at 32°C and 85%, and the improvement in abrasion resistance and crystallization resistance is the same as in the first example. The obtained film also had an amorphous structure and a stoichiometric composition. It has been found that the hardness increases as the material undergoes high vacuum treatment, and that the hardness increases when annealing is performed at 180° C. for 1 hour, for example. [Effects of the Invention] According to the present invention, the protective film of an electrophotographic photoreceptor is
By forming by ion plating of ,
A uniform light-transmitting protective film can be formed on a large-area photoreceptor surface at low temperatures in a short time. This film achieves remarkable improvements in durability such as abrasion resistance and crystallization resistance without changing the electrical properties of the photoreceptor.
The present invention is applicable not only to selenium-based photoreceptors such as -As but also to other photoreceptors, such as organic compound photoreceptors or amorphous silicon photoreceptors.
第1図は本発明の一実施例の部分断面図、第2図は本発
明の実施例の型造に用いられるイオンプレーティング装
置、第3図は本発明の別の実施例の部分断面図である。
1:AI凸体、2:電荷輸送層、3:電荷発生層、4ニ
オ−バコード層、5:、V、O,保護膜、6:電荷発生
・輸送層、21:真空容器、24:イオン化電源、25
: A7.o、 、28:電子ビーム。
第3図FIG. 1 is a partial sectional view of one embodiment of the present invention, FIG. 2 is an ion plating apparatus used for molding the embodiment of the present invention, and FIG. 3 is a partial sectional view of another embodiment of the present invention. It is. 1: AI convex body, 2: Charge transport layer, 3: Charge generation layer, 4 Niobacode layer, 5: V, O, protective film, 6: Charge generation/transport layer, 21: Vacuum container, 24: Ionization power supply, 25
: A7. o, , 28: Electron beam. Figure 3
Claims (1)
モルファス・酸化アルミニウムからなる透光性薄膜で覆
われたことを特徴とする電子写真用感光体。1) An electrophotographic photoreceptor whose surface is covered with a transparent thin film made of amorphous aluminum oxide deposited by an ion plating method.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13752686A JPS62294258A (en) | 1986-06-13 | 1986-06-13 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13752686A JPS62294258A (en) | 1986-06-13 | 1986-06-13 | Electrophotographic sensitive body |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS62294258A true JPS62294258A (en) | 1987-12-21 |
Family
ID=15200737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13752686A Pending JPS62294258A (en) | 1986-06-13 | 1986-06-13 | Electrophotographic sensitive body |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS62294258A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0328097A2 (en) * | 1988-02-10 | 1989-08-16 | Fuji Xerox Co., Ltd. | Method for producing electrophotographic photoreceptor |
-
1986
- 1986-06-13 JP JP13752686A patent/JPS62294258A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0328097A2 (en) * | 1988-02-10 | 1989-08-16 | Fuji Xerox Co., Ltd. | Method for producing electrophotographic photoreceptor |
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