JPS59226176A - Ion plating device - Google Patents
Ion plating deviceInfo
- Publication number
- JPS59226176A JPS59226176A JP9920583A JP9920583A JPS59226176A JP S59226176 A JPS59226176 A JP S59226176A JP 9920583 A JP9920583 A JP 9920583A JP 9920583 A JP9920583 A JP 9920583A JP S59226176 A JPS59226176 A JP S59226176A
- Authority
- JP
- Japan
- Prior art keywords
- film
- base plate
- evaporation
- substrate
- deposited
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
Abstract
Description
【発明の詳細な説明】
(イ)技術分野
本発明は、表面被覆方法の1つであるイオンブレーティ
ング装置の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field The present invention relates to an improvement of an ion blating device, which is one of surface coating methods.
(ロ)従来技術とその問題、壺
従来、表面処理法として、浸炭処理、窒化処理、浸硫処
理、硼化処理、CVD法、スパッタリング法、イオンブ
レーティング法、イオン注入法等が、耐摩耗性、耐食性
、耐熱性、電気絶縁性等の向上の為に用いられ、効果を
上げている。中でもイオンプレー看ング法は、比較的低
温での処゛玲が可能で、密着性の良い皮膜を得ることが
できるため、ハイス、超硬合金等の切削工具、耐摩工具
。(b) Conventional technology and its problems, vase Conventionally, as surface treatment methods, carburizing treatment, nitriding treatment, sulfurization treatment, boriding treatment, CVD method, sputtering method, ion blating method, ion implantation method, etc. have been used to improve wear resistance. It is used to improve properties such as corrosion resistance, heat resistance, electrical insulation, etc., and has been used to great effect. Among them, the ion spray coating method can be processed at relatively low temperatures and can produce a film with good adhesion, so it is suitable for cutting tools such as high speed steel and cemented carbide, and wear-resistant tools.
あるいは装飾部材などに広く用いられている。その代表
的な例を第1図によって説明する。第1図において、1
は図示しない排気装置により排気される真空槽、2はる
つぼを備えた蒸発装置、6は蒸発されるべき物質、4は
基板で絶縁碍子7を介して電源9に接続されている。5
はイオン化電極でこれも絶縁碍子8を介して電源10に
接続される。6は反応ガス導入用のバルブである。第1
図の装置を用いて基板4に被覆を施す場合、蒸発装置2
により、物質6を蒸発させつつ、反応ガスを導入し、イ
オン化電極により物質およびガスをイオン化する。この
イオン化された物質およびガスが負にバイアスされた基
板まで加速されて表面に堆積することにより非常に緻密
で密着性の良い皮膜を得ることができる。イオン化され
る物質および反応ガスはイオン化され正に帯電すること
になリ、これは基板が負にバイアスすることで加速され
、強固に基板と密着することになる。ところが、この従
来の装置では、堆積される皮膜が電気的絶縁性を持つ場
合、膜厚がある程度以上になると飛んできたイオンの持
つ正電荷を逃がすことができず、皮膜の表面が正に帯電
される。これに対し基板は負にバイアスされているため
、皮膜をはさんでコンデンサが形成され、電荷が更に蓄
積され耐圧を越えると絶縁破壊を起こし、皮膜が局所的
に破壊する。これは膜の特性を劣化させると同時に、皮
膜を絶縁用に用いる場合致命的な欠陥となる。It is also widely used as decorative materials. A typical example thereof will be explained with reference to FIG. In Figure 1, 1
2 is an evaporator equipped with a crucible; 6 is a substance to be evaporated; 4 is a substrate connected to a power source 9 via an insulator 7; 5
is an ionizing electrode, which is also connected to a power source 10 via an insulator 8. 6 is a valve for introducing reaction gas. 1st
When coating the substrate 4 using the apparatus shown in the figure, the evaporator 2
While evaporating the substance 6, a reaction gas is introduced, and the substance and gas are ionized by the ionization electrode. This ionized substance and gas are accelerated to the negatively biased substrate and deposited on the surface, making it possible to obtain a very dense film with good adhesion. The substance to be ionized and the reactive gas are ionized and positively charged, which is accelerated by negatively biasing the substrate, and becomes firmly attached to the substrate. However, with this conventional device, if the deposited film has electrical insulating properties, the positive charge of the flying ions cannot be released when the film thickness exceeds a certain level, and the surface of the film becomes positively charged. be done. On the other hand, since the substrate is negatively biased, a capacitor is formed across the film, and when the charge is further accumulated and the withstand voltage is exceeded, dielectric breakdown occurs and the film is locally destroyed. This deteriorates the properties of the film and at the same time becomes a fatal defect when the film is used for insulation.
(ハ)発明の開示
本発明の目的はかかる欠点を克服し、その上皮膜の特性
をも向上できる装置を提供することにある。以下、本発
明を図面をもって説明する。第2図は本発明の一実施例
を示す。図中1から10までは第1図と同一の物を指し
ており説明を省略する。11は例えばWフィラメント等
の熱電子放出源、12はフィラメント加熱用の電源、1
6は絶縁碍子である。この装置において、絶縁性の皮膜
、例えばA?203等を被覆する場合蒸発源2によりA
7を蒸発させ、反応ガスとじて酸素をバイブロを介して
導入する。これをイオン化電極5によりイオン化し、負
にバイアスされた基板4へ堆積する。その際、フィラメ
ント11より熱電子を基板上へ、照射しつつ被覆を行な
う。この方法で被覆することの利点は、熱電子の照射に
より皮膜表面の正に帯電された電荷が中性化され、皮膜
の絶縁破壊を防ぐこと、また基板表面が、照射により清
浄化されること、更に基板が加熱され良質の皮膜が得ら
れること等でこれらの重畳効果で非常に良好な皮膜を得
ることが可能となった。このように本発明によれば、電
気絶縁性の皮膜を良質に、しかも密着性よく被覆するこ
とが可能であるが、電気伝導性の皮膜についても電子線
照射の効果があることはいうまでもない。また電子線照
射の際は基板上をくまなく走査できる様に磁気偏向コイ
ル等を設置するとその効果は更に増加する。(C) Disclosure of the Invention An object of the present invention is to provide a device that can overcome these drawbacks and also improve the properties of the epithelial membrane. Hereinafter, the present invention will be explained with reference to the drawings. FIG. 2 shows an embodiment of the invention. In the figure, numerals 1 to 10 refer to the same parts as in FIG. 1, and their explanation will be omitted. 11 is a thermionic emission source such as a W filament, 12 is a power source for heating the filament, 1
6 is an insulator. In this device, an insulating film, for example A? When coating 203 etc., A
7 is evaporated, and oxygen is introduced via a vibrotube along with the reaction gas. This is ionized by the ionization electrode 5 and deposited on the negatively biased substrate 4. At this time, the coating is performed while irradiating the substrate with thermoelectrons from the filament 11. The advantage of coating with this method is that the positively charged charge on the film surface is neutralized by thermionic irradiation, preventing dielectric breakdown of the film, and that the substrate surface is cleaned by the irradiation. In addition, the substrate is heated to obtain a high-quality film, and these superimposed effects have made it possible to obtain a very good film. As described above, according to the present invention, it is possible to coat an electrically insulating film with good quality and good adhesion, but it goes without saying that electron beam irradiation is also effective on electrically conductive films. do not have. Further, when irradiating the electron beam, the effect will be further increased if a magnetic deflection coil or the like is installed so that the substrate can be scanned all over the substrate.
第1図は従来の、また第2図は本発明によるイオンブレ
ーティング装置である。
1・・・・真空槽、2・・・蒸発源、3・・・蒸着物質
、4・・・基板、5・・・イオン化電極、6・ガス導入
バルブ。
9 ・ス(板加速電源、10・イオン化電源、11・・
熱電子放射フィラメント、12・・加熱用電源第1図FIG. 1 shows a conventional ion blating device, and FIG. 2 shows an ion brating device according to the present invention. DESCRIPTION OF SYMBOLS 1... Vacuum chamber, 2... Evaporation source, 3... Vapor deposition substance, 4... Substrate, 5... Ionization electrode, 6... Gas introduction valve. 9.S(plate acceleration power source, 10.ionization power source, 11..
Thermionic emission filament, 12... Heating power supply Figure 1
Claims (1)
を備え、これら金属又はセラミックを該蒸発源と対向す
る基板」二に堆積させるイオンブレーティング装置にお
いて、基板表面を、電子線照射する機構を備えたことを
特徴とするイオンブレーティング装置。(1) Metals or carbides, nitrides, oxides, borides. In an ion blating apparatus that is equipped with an evaporation source for evaporating ceramics such as carbonitrides and oxycarbonitrides, and deposits these metals or ceramics on a substrate facing the evaporation source, the surface of the substrate is irradiated with electron beams. An ion brating device characterized by being equipped with a mechanism.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9920583A JPS59226176A (en) | 1983-06-02 | 1983-06-02 | Ion plating device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9920583A JPS59226176A (en) | 1983-06-02 | 1983-06-02 | Ion plating device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59226176A true JPS59226176A (en) | 1984-12-19 |
Family
ID=14241143
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9920583A Pending JPS59226176A (en) | 1983-06-02 | 1983-06-02 | Ion plating device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59226176A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4941430A (en) * | 1987-05-01 | 1990-07-17 | Nihon Sinku Gijutsu Kabusiki Kaisha | Apparatus for forming reactive deposition film |
-
1983
- 1983-06-02 JP JP9920583A patent/JPS59226176A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4941430A (en) * | 1987-05-01 | 1990-07-17 | Nihon Sinku Gijutsu Kabusiki Kaisha | Apparatus for forming reactive deposition film |
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