JPS62292690A - Boat for growing ii-vi compound single crystal - Google Patents
Boat for growing ii-vi compound single crystalInfo
- Publication number
- JPS62292690A JPS62292690A JP13298386A JP13298386A JPS62292690A JP S62292690 A JPS62292690 A JP S62292690A JP 13298386 A JP13298386 A JP 13298386A JP 13298386 A JP13298386 A JP 13298386A JP S62292690 A JPS62292690 A JP S62292690A
- Authority
- JP
- Japan
- Prior art keywords
- boat
- single crystal
- opening
- growing
- melt
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 37
- 150000001875 compounds Chemical class 0.000 title claims description 26
- 238000000034 method Methods 0.000 claims description 8
- 239000002994 raw material Substances 0.000 abstract description 13
- 238000006243 chemical reaction Methods 0.000 abstract description 12
- 239000000155 melt Substances 0.000 abstract description 8
- 238000001691 Bridgeman technique Methods 0.000 abstract 2
- 230000008016 vaporization Effects 0.000 abstract 1
- 238000009834 vaporization Methods 0.000 abstract 1
- 229910004613 CdTe Inorganic materials 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910004606 CdTc Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035936 sexual power Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〈産業上の利用分野〉
この発明は、Ｉ［−ＶＴ族化合物単結晶成長用ボートに
関する。さらに詳細には、この発明は原料の損失を防止
し収率の向上が図れるＩＩ −ＶＩ族化合物単結晶成長
用ポートに関する。Detailed Description of the Invention 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a boat for growing single crystals of I[-VT group compounds. More specifically, the present invention relates to a port for single crystal growth of Group II-VI compounds that can prevent loss of raw materials and improve yield.
〈従来の技術〉
従来、ＩＩ−ＶＩ族化合物単結晶の製造方法として、種
々の方法が用いられているが、そのような方法の一つと
して、第３図に示されるような単結晶成長用のボートを
用いた水平ブリッジマン法を挙げることができる。この
装置を用いて■−■族化合物単結晶、例えば、ＣｄＴｅ
化合物単結晶を製造する一例を説明すると、反応部（４
）とりザーバ一部（５）とがキャピラリーで連通された
反応容器（６）を使用し、リザーバ一部（５）に適量の
Ｃｄを加えるとともに反応部（４）に設けられた単結晶
成長用ボート［７］内にＣｄＴｅ化合物原料を仕込んだ
後、反応容器（６）を減圧し真空とする。そして、反応
容器（６）を炉（８）により外部から加熱し、ＣｄＴｅ
化合物原料を溶融させて融液（９）とした後、単結晶成
長用ボート（７１の一端に設けられた棚部に保持された
ＣｄＴｅ化合物単結晶（種子結晶）を該融液（９）に接
触させ、結晶成長を開始させる。その後、炉（８）の温
度分布を移ｌ１ｌＩ（装置によっては、炉またはボート
の移動）させて結晶を成長させ、ＣｄＴｅ化合物単結晶
（ト））が製造される。上記の製造方法において、該炉
（８）の温度分布は、反応容器（６）内部の蒸気圧の制
御を行ないつつ単結晶の成長を行うため、通常、第４図
に示されるように、７１ （ＣｄＴｅ化合物の融点）
以上の温度領域、前記Ｔ１と後記Ｔ３との間の温度であ
るＴ２の温度領域、および反応系内を化学量論的な化合
物を得るに適した蒸気圧に保持するために、蒸気圧制御
物質（上記の例ではＣｄ）を蒸発させるに必要な加熱温
度であるＴ３の温度領域の３つの定温度帯となされてい
る。<Prior Art> Conventionally, various methods have been used to produce single crystals of group II-VI compounds, and one such method is a method for growing single crystals as shown in FIG. One example is the horizontal Bridgman method using a boat. This device can be used to produce single crystals of ■-■ group compounds, such as CdTe.
To explain an example of manufacturing a compound single crystal, the reaction part (4
) Using a reaction vessel (6) which is connected to a part of the reservoir (5) through a capillary, an appropriate amount of Cd is added to the part of the reservoir (5), and a part for single crystal growth provided in the reaction part (4) is used. After charging the CdTe compound raw material into the boat [7], the pressure of the reaction vessel (6) is reduced to create a vacuum. Then, the reaction vessel (6) is heated from the outside by the furnace (8), and the CdTe
After melting the compound raw material to form a melt (9), a CdTe compound single crystal (seed crystal) held on a shelf provided at one end of the single crystal growth boat (71) is added to the melt (9). Then, the temperature distribution of the furnace (8) is changed (depending on the device, the furnace or boat is moved) to grow the crystal, and a CdTe compound single crystal (7) is produced. Ru. In the above manufacturing method, the temperature distribution of the furnace (8) is usually 71°C as shown in FIG. (Melting point of CdTe compound)
In order to maintain the above temperature range, the temperature range T2 which is a temperature between T1 and T3 mentioned above, and the inside of the reaction system at a vapor pressure suitable for obtaining a stoichiometric compound, a vapor pressure controlling substance is used. There are three constant temperature zones in the temperature range T3, which is the heating temperature necessary to evaporate Cd (in the above example).
〈発明が解決しようとする問題点〉
しかしながら、ＣｄＴｃ化合物は融点における解離圧が
大きく、またＣｄおよびＴｅは共に高い蒸気圧を示す。<Problems to be Solved by the Invention> However, the CdTc compound has a high dissociation pressure at its melting point, and both Cd and Te exhibit high vapor pressures.
特にＣｄは蒸気圧が高いので、上記方法のような化学量
論的組成制御のＣｄ圧においても単結晶成長用ボートｆ
７１内の融液（９）の表面からりザーバ一部（５）への
蒸発が生じ、原料の損失が大きいという問題がある。特
に、大型の単結晶を製造する際には、成長用ボートも大
型となり、表面積も広くなるので、蒸発による損失は大
きなものとなる。In particular, since Cd has a high vapor pressure, even when the Cd pressure is stoichiometrically controlled as in the above method, the single crystal growth boat f
There is a problem in that the melt (9) in 71 evaporates from the surface to a part of the reservoir (5), resulting in a large loss of raw material. In particular, when producing large single crystals, the growth boat becomes large and the surface area becomes large, so losses due to evaporation become large.
く目 的〉
この発明は上記問題点に鑑みてなされたものであり、成
長用ボート表面からの蒸発を制御し、原料の損失を防止
できる■−■族化合物単結晶成長用ボートを提供するこ
とを目的とする。Purpose This invention has been made in view of the above problems, and it is an object of the present invention to provide a boat for single crystal growth of ■-■ group compounds that can control evaporation from the surface of the growth boat and prevent loss of raw materials. With the goal.
く構成〉
上記目的を達成するためになされた、この発明の■−■
族化合物単結晶成長用ボートは、開口部を有する有蓋の
単結晶成長用ボートであることを特徴とし、該開口部は
小面積であることが好ましい。■-■ of this invention made to achieve the above object
The boat for single crystal growth of group compounds is characterized by being a closed single crystal growth boat having an opening, and the opening preferably has a small area.
く作 用〉
この発明は、上記の構成よりなり、成長用ボート内の融
液は、開口部を有づる益で覆われるので、該葺が融液表
面からの蒸発の抵抗体となり、原料の４失を減少させる
ことができる。特に、開口部が小面積であれば、この効
果は一層大きくなる。Function> The present invention has the above-mentioned configuration, and since the melt in the growth boat is covered with a layer having an opening, the covering acts as a resistance to evaporation from the surface of the melt, thereby preventing the raw material from evaporating. 4 losses can be reduced. In particular, if the area of the opening is small, this effect will be even greater.
〈実施例〉
以下、実施例を示す添附図面に基づいて詳細に説明する
。<Examples> Hereinafter, examples will be described in detail based on the accompanying drawings showing examples.
第１図は、この発明の■−■族化合物単結晶成長用ポー
トの一実施例を示す斜視図で、ボート底部（１）、ｆｉ
１２１および開口部（３）で構成されている５ボ一ト底
部（１）は従来から使用されている単結晶成長用ボート
と実質的に同一のものである。該ボート底部（１）の上
方開口面はＭＩ２Ｊで覆われ、ＭＩ２Ｊにはスリット状
の開口部（３）が識語（２）の幅方向に沿って設けられ
ている。ボート底部（１）と益（′２Ｊとは融着Ｍによ
り封着してもよいが、封着しなくとも、この発明の効果
は充分に達成することができる。開口部（３）の形状は
、特に限定されず、上記のＪ：うにスリット状としても
よいし、小穴状等でもよい。また、益（２）を２つに分
け、その部分されたＭ［２］をボート底部（１）上に小
間隔をＪ３いて覆設することによって開口部（３）を形
成してもよい。さらに、開口部（３）は上記実施例とは
異なり、該葺（２）の長さ方向に泊って設けられていて
もよい。FIG. 1 is a perspective view showing an embodiment of the port for growing single crystals of group ■-■ group compounds of the present invention, showing the bottom of the boat (1), the fi
121 and an opening (3), the five-bottom bottom (1) is substantially the same as a conventional single crystal growth boat. The upper opening surface of the boat bottom (1) is covered with MI2J, and MI2J is provided with a slit-shaped opening (3) along the width direction of the mark (2). The boat bottom (1) and the hole ('2J) may be sealed by fusion M, but the effects of the present invention can be fully achieved without sealing.The shape of the opening (3) is not particularly limited, and may be in the shape of a slit or a small hole, etc.Also, divide the profit (2) into two parts, and place the divided part M[2] at the bottom of the boat (1 ) The opening (3) may be formed by covering the roof (2) at a small interval.Furthermore, the opening (3) is different from the above embodiment in that it extends in the length direction of the roof (2). It may be provided for overnight stay.
この発明にあっては、開口部（３）の形状等よりもぞの
面積が重要な意味を有し、開口部（３）の面積を１０ｍ
−以下とづるのが制御性の面から好ましい。In this invention, the area of the opening (3) is more important than the shape etc., and the area of the opening (3) is set to 10 m.
- The following is preferable from the viewpoint of controllability.
上記ボート底部（１）および益（２）の材質としては、
外部より結晶の成長状態を観察できる点から透明石英が
好ましいが、予め設定された条件で製造を行うように観
察が不要の場合には、セラミックス、ＢＮ、ＳｉＣ，Ａ
ｌ１０ｓ等の材質でもよい。The materials for the bottom of the boat (1) and bottom (2) are as follows:
Transparent quartz is preferable because it allows observation of the crystal growth state from the outside, but if observation is not necessary because the manufacturing is performed under preset conditions, ceramics, BN, SiC, A
It may be made of a material such as l10s.
次に、この発明にかかる単結晶成長用ボートの使用法の
一例を説明すると、まずボート底部（１）の内部にＩｒ
−ＶＩ族化合物単結晶原料を充填し、開口部（３）を
有するＨＩ２Ｊで苛った後、第３図で示される装置の反
応部（４）の所定位置に設置し、反応容器（６）を減圧
し真空とする。以下、従来の水平ブリッジマン法に準じ
て、ｆｆ−Ｖｉ族化合物単結晶を成長させる。上記の製
造方法中、開口部（３）は結晶の成長方向に向かって後
ろ側に設ける方が蒸気圧の制御を行うには好ましい。従
って、益（２）に開口部（３）を設ける際にも、益（２
）の長さ方向の一端に寄った部分に開口部（３）を設け
ることが好ましい。Next, an example of how to use the boat for single crystal growth according to the present invention will be explained.
- After filling the group VI compound single crystal raw material and cauterizing it with HI2J having an opening (3), the reaction vessel (6) is placed in a predetermined position in the reaction part (4) of the apparatus shown in FIG. Reduce the pressure to create a vacuum. Thereafter, an ff-Vi group compound single crystal is grown according to the conventional horizontal Bridgman method. In the above manufacturing method, it is preferable to provide the opening (3) on the rear side in the direction of crystal growth in order to control the vapor pressure. Therefore, when providing the opening (3) in the profit (2),
) is preferably provided with an opening (3) near one end in the length direction.
以下、実験例をもって、この発明をより詳細に説明する
。This invention will be explained in more detail below using experimental examples.
実験例
スリット面積を変化させた、第１図に示される単結晶成
長用ボート（長さ１７０１Ｎ＃１１幅２０ｉｎ、深さ１
０順）を作製し、該ボート内にＣｄＴｅ化合物原料を一
部吊仕込んだ後、第３図に示される装置の反応部の所定
位置に設置し、ＴＩ＝１１７０℃、Ｔ２＝１０５０℃お
よびＴ３ ＝ ８２０℃の温度条件で加熱し、原料のロ
ス量を測定した。ロス量の測定は、ＣｄＴｅ化合物を含
むボートの加熱前後の重量の差により求めた。その結果
を第２図に示す。Experimental example A single crystal growth boat (length 1701N #11 width 20 inches, depth 1
After preparing a CdTe compound raw material and suspending a portion of the CdTe compound raw material into the boat, it was installed at a predetermined position in the reaction section of the apparatus shown in FIG. = 820° C., and the amount of raw material loss was measured. The amount of loss was determined by the difference in weight of the boat containing the CdTe compound before and after heating. The results are shown in FIG.
第２図から明らかなように、ロス量は、ある間口面積（
ＳＯ）までは開口面積に比例して増加覆るが、ＳＯを越
えるとロス量の変化はなくなり、Ｃｄ分圧や融液温度の
影響が強くなる。種々の実験の結果、クリティカルポイ
ントＳＯは、Ｃｄ分圧や融液条件により若干の変化が見
られるが、おおよそ２〜１０−の範囲に存在する。従っ
て、開口部の面積は１０ｍ１以下とするのが好ましい。As is clear from Figure 2, the amount of loss is determined by a certain frontage area (
Up to SO), the loss increases in proportion to the opening area, but beyond SO, the amount of loss does not change, and the influence of Cd partial pressure and melt temperature becomes stronger. As a result of various experiments, the critical point SO exists approximately in the range of 2 to 10<-> although some changes are observed depending on the Cd partial pressure and melt conditions. Therefore, it is preferable that the area of the opening is 10 m1 or less.
く効果〉
以上のように、この発明の■−■族化合物単結晶成長用
ボートによれば、開口部を有する蓋が融液表面からの蒸
発を抑制するので、原料の損失を防止でき、生産性の向
上に寄与できるという特有の効果を奏する。Effects> As described above, according to the boat for single crystal growth of group ■-■ group compounds of the present invention, the lid having the opening suppresses evaporation from the surface of the melt, which prevents loss of raw materials and improves production. It has the unique effect of contributing to improving sexual performance.
第１図は、この発明にがかる■−■族化合物単結晶成長
用ポートの一実施例を示す斜視図、第２図は、実験例に
おける間口面積とロス量の関係を示す図、
第３図および第４図は、それぞれ水平ブリッジマン法に
用いられる装置の概略図および温度制御例の概略図であ
る。
（１）・・・・・・ボート底部 （２）・・・・
・・益０）・・・・・・開口部FIG. 1 is a perspective view showing an embodiment of a port for growing single crystals of ■-■ group compounds according to the present invention, FIG. 2 is a diagram showing the relationship between frontage area and amount of loss in an experimental example, and FIG. and FIG. 4 are a schematic diagram of an apparatus used in the horizontal Bridgman method and a schematic diagram of an example of temperature control, respectively. (1)・・・Bottom of the boat (2)・・・・
・・Profit 0)・・・・Opening
Claims (1)
製造に使用される単結晶成長用ボートにおいて、該ボー
トが開口部を有する有蓋ボートであることを特徴とする
II−VI族化合物単結晶成長用ボート。 ２、開口部の面積が、１０ｍｍ＾２以下である上記特許
請求の範囲第１項記載のII−VI族化合物単結晶成長用ボ
ート。[Claims] 1. A boat for single crystal growth used for producing a II-VI group compound single crystal by the horizontal Bridgman method, characterized in that the boat is a covered boat having an opening.
Boat for single crystal growth of II-VI group compounds. 2. The boat for growing a group II-VI compound single crystal according to claim 1, wherein the area of the opening is 10 mm^2 or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61132983A JPH0735318B2 (en) | 1986-06-09 | 1986-06-09 | <II>-<VI> Group compound single crystal growth boat |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61132983A JPH0735318B2 (en) | 1986-06-09 | 1986-06-09 | <II>-<VI> Group compound single crystal growth boat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62292690A true JPS62292690A (en) | 1987-12-19 |
| JPH0735318B2 JPH0735318B2 (en) | 1995-04-19 |
Family
ID=15094042
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61132983A Expired - Fee Related JPH0735318B2 (en) | 1986-06-09 | 1986-06-09 | <II>-<VI> Group compound single crystal growth boat |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0735318B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH026330A (en) * | 1988-03-07 | 1990-01-10 | Sanyo Electric Co Ltd | Production of superconducting material and superconducting single crystal |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747795A (en) * | 1980-08-09 | 1982-03-18 | Hitachi Cable Ltd | Manufacture of mixed single crystal |
| JPS58129634U (en) * | 1982-02-25 | 1983-09-02 | 富士通株式会社 | Ampoule for manufacturing semiconductor crystals |
| JPS5983914A (en) * | 1982-10-29 | 1984-05-15 | Fujitsu Ltd | Method for forming alloy containing easily evaporable component |
-
1986
- 1986-06-09 JP JP61132983A patent/JPH0735318B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5747795A (en) * | 1980-08-09 | 1982-03-18 | Hitachi Cable Ltd | Manufacture of mixed single crystal |
| JPS58129634U (en) * | 1982-02-25 | 1983-09-02 | 富士通株式会社 | Ampoule for manufacturing semiconductor crystals |
| JPS5983914A (en) * | 1982-10-29 | 1984-05-15 | Fujitsu Ltd | Method for forming alloy containing easily evaporable component |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH026330A (en) * | 1988-03-07 | 1990-01-10 | Sanyo Electric Co Ltd | Production of superconducting material and superconducting single crystal |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0735318B2 (en) | 1995-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |