JPS62291934A - Mounting method for flip-chip - Google Patents
Mounting method for flip-chipInfo
- Publication number
- JPS62291934A JPS62291934A JP61134950A JP13495086A JPS62291934A JP S62291934 A JPS62291934 A JP S62291934A JP 61134950 A JP61134950 A JP 61134950A JP 13495086 A JP13495086 A JP 13495086A JP S62291934 A JPS62291934 A JP S62291934A
- Authority
- JP
- Japan
- Prior art keywords
- flip chip
- chip
- substrate
- glass substrate
- flip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 18
- 229910000679 solder Inorganic materials 0.000 claims abstract description 35
- 238000002844 melting Methods 0.000 claims description 2
- 230000008018 melting Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 50
- 239000011521 glass Substances 0.000 abstract description 43
- 239000004593 Epoxy Substances 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 230000009102 absorption Effects 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 30
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 19
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 19
- 238000010438 heat treatment Methods 0.000 description 8
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 5
- 239000004973 liquid crystal related substance Substances 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 101150006573 PAN1 gene Proteins 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000003570 air Substances 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- -1 neodymium ions Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/818—Bonding techniques
- H01L2224/81801—Soldering or alloying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/156—Material
- H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
- H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
Abstract
Description
【発明の詳細な説明】
３、発明の詳細な説明
〈産業上の利用分野〉
本発明は電子回路装置に備えられるフリップチップの回
路基板への実装方法に関する。Detailed Description of the Invention 3. Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a method for mounting a flip chip provided in an electronic circuit device onto a circuit board.
〈従来技術〉
マイクロ接続技術の一つとして高密度実装が可能なフリ
ップチップボンディングがある。これはフリップチップ
を直径０．２ｍｍ程度の複数のＩｎ細なはんだ、すなわ
ちはんだバンプを介して回路基板に接続するものである
。<Prior Art> Flip chip bonding, which allows high-density mounting, is one of the micro-connection technologies. In this method, a flip chip is connected to a circuit board through a plurality of thin Indium solders each having a diameter of about 0.2 mm, that is, solder bumps.
このようなフリップチップの実装方法として、従来、例
えば第２図、第３図に示す方法が提案されている。Conventionally, methods shown in FIGS. 2 and 3, for example, have been proposed as methods for mounting such flip chips.
第２図に示す方法は、金属パターンが形成された回路基
板、例えば液晶を具備するＬＣＤガラス基板１の一方の
面２上に、はんだバンプ３を有−５−るフリ゛ソブチ゛
ツブ４を配置し、二のフリ・ンブヂップ４を挟むように
Ｌ ＣＤガラス基板１の両側に一対のホットガスヒータ
ヲ、６を配置し、これらのホットガスヒータ５．６がら
、はんだパン１３部分の温度が３３０〜３５０°Ｃ程度
の温度になるように高温ガス７をフリップチップ４方向
に与え、ＬＣＤガラス基板１を１１４成するガラスの熱
％９をやわらげながらフリップチップ４のはんだバンプ
３およびＬＣＤガラス基板１上の予備はんだを溶融させ
、この溶ａ１シたはんだを介してフリップチップ４をＬ
ＣＤガラス基板１に接続するものであ′る。In the method shown in FIG. 2, a flexible substrate 4 having solder bumps 3 is placed on one side 2 of a circuit board on which a metal pattern is formed, for example, an LCD glass substrate 1 having a liquid crystal. A pair of hot gas heaters 5 and 6 are arranged on both sides of the LCD glass substrate 1 so as to sandwich the second fringe dip 4, and these hot gas heaters 5 and 6 keep the temperature of the solder pan 13 at 330 to 350 degrees. A high-temperature gas 7 is applied in the direction of the flip chip 4 so that the temperature is about C, and while softening the heat 9 of the glass that forms the LCD glass substrate 1, the solder bumps 3 of the flip chip 4 and the preliminary parts on the LCD glass substrate 1 are heated. Melt the solder and attach the flip chip 4 to L through the melted solder.
It is connected to the CD glass substrate 1.
なお、上記したホットガスヒータ５．６のうちの図示下
方に位置するホットガスヒータ６を省略した方法もある
。It should be noted that there is also a method in which the hot gas heater 6 located at the lower part of the figure among the hot gas heaters 5 and 6 described above is omitted.
また、第３図に示す方法は、ＬＣＤガラス基板１の一方
の面２上にはんだバンプ３を有するフリップチップ４を
配置し、このフリップチップ４に対応する位置のＬＣＤ
ガラス基板１の他方の面側に、当該ＬＣＤガラス基板１
に密着させてヒートブロック９を配置し、このヒートブ
ロック９によって加熱し、矢印１０で示すように熱伝導
を介してフリップチップ４のはんだパン１３部分を加熱
溶融させ、これによってフリップチップ４をＬＣＤガラ
ス基板１に接続するものである。Further, the method shown in FIG. 3 is to arrange a flip chip 4 having solder bumps 3 on one side 2 of an LCD glass substrate 1, and to
The LCD glass substrate 1 is placed on the other side of the glass substrate 1.
A heat block 9 is placed in close contact with the flip chip 4, and the heat block 9 heats and melts the solder pan 13 portion of the flip chip 4 through heat conduction as shown by the arrow 10, thereby connecting the flip chip 4 to the LCD. It is connected to the glass substrate 1.
なお、このようなヒートブロック９を設けることに併せ
て、フリップチップ４側にホットガスヒータを配置し、
このホットガスヒータによる加熱を併用したものもある
。In addition to providing such a heat block 9, a hot gas heater is arranged on the flip chip 4 side,
Some devices also use heating using a hot gas heater.
〈発明が解決しようとする問題点〉
ところで、上記した第２図に示す従来の方法にあっては
、ホットガスヒータ５．６から放出された高温ガスがフ
リップチップ４の周囲に分散し、また第３図に示す従来
の方法にあってはヒートブロック９の熱がフリップチッ
プ４の周囲に伝わり、共にフリップチップ４の近傍の加
熱をしてはならない回路部分、例えばＬＣＤガラス基板
１上の液晶を加熱するおそれがあり、このため当該加熱
をしてはならない回路部分を冷却する冷却装置を要し、
この実装作業が煩雑になるとともに、製作費が高くなる
不具合がある。なお、上記した液晶は１２０℃以上には
加熱してはならないものである。<Problems to be Solved by the Invention> By the way, in the conventional method shown in FIG. In the conventional method shown in FIG. 3, the heat from the heat block 9 is transmitted to the periphery of the flip chip 4, and it also damages circuit parts near the flip chip 4 that should not be heated, such as the liquid crystal on the LCD glass substrate 1. There is a risk of heating, and therefore a cooling device is required to cool the circuit parts that should not be heated.
There is a problem that this mounting work becomes complicated and the manufacturing cost increases. Note that the liquid crystal described above must not be heated above 120°C.
また、第２、第３図に示す従来の方法はいずれもＬＣＤ
ガラス基板１を構成するガラスが直接に加熱されるので
、当該ガラスの割れを防止するためにゆっくり加熱をお
こなわなければならず、このフリップチップ４の接続作
業に少なくとも３０秒以上の時間がかかり、作業能率の
向上を見込み難い。Furthermore, both of the conventional methods shown in FIGS.
Since the glass constituting the glass substrate 1 is directly heated, it must be heated slowly to prevent the glass from cracking, and the process of connecting the flip chip 4 takes at least 30 seconds. It is difficult to expect improvement in work efficiency.
また逆に、このように接続作業に時間がかかることは、
それだけ加熱による影響をフリップチップ４の周囲に及
ぼすことになり、上記した冷却装置を不可欠なものとし
ている。On the other hand, the fact that it takes a long time to connect
This increases the influence of heating on the surroundings of the flip chip 4, making the above-mentioned cooling device indispensable.
本発明は、上記した従来技術における実情に鑑みてなさ
れたもので、その目的は、フリップチップの接続作業に
際してフリップチップの周囲に対する熱の影響を抑制で
き、しかも、この接続作業を短時間でおこなうことので
きるフリップチップの実装方法を提供することにある。The present invention has been made in view of the above-mentioned actual situation in the prior art, and its purpose is to suppress the influence of heat on the surroundings of the flip chip during the connection work of the flip chip, and to perform the connection work in a short time. The object of the present invention is to provide a flip-chip mounting method that can be used.
〈問題点を解決するための手段〉
この目的を達成するために本発明は、フリップチップを
回路基板へはんだ１寸けするフリップチップの実装方法
において、回路基板の一方の面にフリップチップを配置
し、回路基板の他方の面側にＹＡＧレーザ照射装置を配
置し、このＹＡＧレーザ照射装置のレーザ光を回路基板
を透過させてフリップチップのはんだバンプ部分に与え
、このはんだバンプ部分を溶融させてフリップチップを
回路基板に接続する構成にしである。<Means for Solving the Problems> In order to achieve this object, the present invention provides a flip chip mounting method in which a flip chip is soldered onto a circuit board, in which the flip chip is placed on one side of the circuit board. Then, a YAG laser irradiation device is placed on the other side of the circuit board, and the laser beam from this YAG laser irradiation device is transmitted through the circuit board and applied to the solder bump portion of the flip chip, melting the solder bump portion. This is a configuration in which a flip chip is connected to a circuit board.
く作用〉
本発明は、上記のようにＹＡＧレーザ光をフリップチッ
プのはんだバンプ部分に与えるようにしたので、回路基
板がガラス基板等である場かに当該ガラス基板等を加熱
することなくはんだバンプ部分を溶融させることができ
、これによってフリップチップの周囲に対する熱の影響
を抑制できる。Effects> In the present invention, since the YAG laser beam is applied to the solder bump portion of the flip chip as described above, when the circuit board is a glass substrate, the solder bump can be applied to the solder bump portion without heating the glass substrate, etc. The portion can be melted, thereby reducing the thermal effects on the surroundings of the flip chip.
また、ＹＡＧレーザ光のエネルギ密度を高くできるので
、はんだバンプ部分の溶融を短時間の内に実現させるこ
とができ、これによりフリップチップの接続作業を短時
間でおこなうことができる。In addition, since the energy density of the YAG laser beam can be increased, the solder bump portion can be melted within a short time, thereby making it possible to perform the flip chip connection work in a short time.
〈実施例〉 以下、本発明のフリップチップの実装方法を説明する。<Example> The flip chip mounting method of the present invention will be described below.
第１図は本発明のフリップチップの実装方法の一実施例
を示す説明図である。FIG. 1 is an explanatory diagram showing an embodiment of the flip-chip mounting method of the present invention.
この第１図において、１は回路基板、例えばＬＣＤガラ
ス基板１．４はフリップチップで、はんだバンプ３を有
している。In FIG. 1, 1 is a circuit board, for example an LCD glass substrate 1.4 is a flip chip, and has solder bumps 3.
この実施例では、同第１図に示すように、ＬＣＤガラス
基板１の一方の面２上にフリップチップ４を配置し、こ
のフリップチップ４の位置するＬＣＤガラス基板１の一
方の面２側にフリップチップ４の予備加熱用のホットガ
スヒータ１１を配置し、ＬＣＤガラス基板１の他方の面
１２側に、ＹＡＧレーザ照射装置１３を配置する。この
際、ＹＡＧレーザ照射装置１３の照射部１４の中心と、
フリップチップ４の中心と、ホットガスヒータ１１の中
心とがほぼ一直線上に位置するように配置する。In this embodiment, as shown in FIG. 1, a flip chip 4 is arranged on one surface 2 of the LCD glass substrate 1, and the flip chip 4 is placed on the one surface 2 side of the LCD glass substrate 1 where the flip chip 4 is located. A hot gas heater 11 for preheating the flip chip 4 is arranged, and a YAG laser irradiation device 13 is arranged on the other surface 12 side of the LCD glass substrate 1. At this time, the center of the irradiation part 14 of the YAG laser irradiation device 13,
The flip chip 4 is arranged so that the center of the flip chip 4 and the center of the hot gas heater 11 are located substantially in a straight line.
なお、上記したホットガスヒータ１１は、ＬＣＤガラス
基板１を構成するガラスのサーマルショックを緩和させ
るために設けたものであり、その吐出口１５よつ、加熱
されたチッ素、二酸化炭素、空気等のガス１６を放出し
、このガス１６によりフリップチップ４およびＬＣＤガ
ラス基板１のフリップチップ４近傍のガラス部分を予備
加熱するもので、ガス１６の温度調節、吐出量調節が可
能になっている。そして、放出されるガス１６の温度は
、フリップチップ４のはんだバンプ３がイ容門主しない
十分に低い温度、例えばＬＣＤガラス基板１に具備され
る液晶に影響を与えない１１０°Ｃ程度に設定しである
。The hot gas heater 11 described above is provided to alleviate the thermal shock of the glass constituting the LCD glass substrate 1, and its discharge port 15 allows heated nitrogen, carbon dioxide, air, etc. A gas 16 is released, and the flip chip 4 and the glass portion of the LCD glass substrate 1 near the flip chip 4 are preheated by the gas 16, and the temperature and discharge amount of the gas 16 can be adjusted. The temperature of the emitted gas 16 is set to a sufficiently low temperature that the solder bumps 3 of the flip chip 4 will not be affected, for example, at about 110° C. that will not affect the liquid crystal provided on the LCD glass substrate 1. It is.
また、上記したＹＡＧレーザ照射装置１３は、ネオジウ
ムイオンを活性イオンとして含むＹ ＡＧ（イツトリウ
ム・アルミニウム・ガーネット）レーザ光を照射するも
のであり、このＹＡＧレーザ光の波長はＣＯ２レーザ光
の波長の１ ／ １０程度の１．０６μｍであり、セラ
ミック基板、ガラスエポキシ基板、フレキシブル基板、
ガラス基板等の絶縁体における吸収がＣｏ２レーザ光に
おけるよりもはるかに少ない、したがって、はんだバン
プ３部分が溶融し鏡面になった場合でも、当該はんだ鏡
面からの反射光による基板の損傷がきわめて少なく、上
述のようにＬＣＤガラス基板１の裏面から当該ＹＡＧレ
ーザ光を照射してフリップチップ４部分のはんだパン１
３部分を溶融させることができる。なお、ＹＡＧレーザ
光によるはんだパン１３部分の加熱温度は３３０〜３５
０℃程度である。また、このＹＡＧレーザ照射装置１３
ではファイバーを介してＹＡＧレーザ光を導くことがで
き、小型で、収扱い易い。Further, the YAG laser irradiation device 13 described above irradiates YAG (yttrium aluminum garnet) laser light containing neodymium ions as active ions, and the wavelength of this YAG laser light is 1 of the wavelength of the CO2 laser light. / 1.06 μm, which is about 10, and is suitable for ceramic substrates, glass epoxy substrates, flexible substrates,
Absorption in insulators such as glass substrates is much lower than that in Co2 laser light. Therefore, even if the solder bump 3 portion melts and becomes a mirror surface, the damage to the substrate due to the reflected light from the solder mirror surface is extremely small. As described above, the YAG laser beam is irradiated from the back side of the LCD glass substrate 1 to solder pan 1 of the flip chip 4 portion.
Three parts can be melted. In addition, the heating temperature of the solder pan 13 portion by the YAG laser beam is 330 to 35
The temperature is about 0°C. In addition, this YAG laser irradiation device 13
The YAG laser beam can be guided through a fiber, and it is small and easy to handle.
そして、上記のようにフリップチップ４を挟むようにホ
ットガスヒータ１１およびＹＡＧレーザ照射装置１３を
配置した状態において、まず、ホットガスヒータ１１か
らガスヒータ１６をフリップチップ４方向に放出してＬ
ＣＤガラス基板１を構成するガラスをサーマルショック
を生じない程度に予備加熱し、次いでＹ Ａ Ｇレーザ
照射装置１３の照射部１４から同第１図に示すようにレ
ーザ光１７を照射すると、このレーザ光１７はＬＣＤガ
ラス基板１を透過してフリップチップ４のはんだパン１
３部分に至り、このレーザ光１７によって当該はんだバ
ンプ３およびＬＣＤガラス基板１上の予備はんだが直接
的に加熱されて溶融し、フリップチップ４がＬＣＤガラ
ス基板１に接続（ボンディング）される。Then, in a state where the hot gas heater 11 and the YAG laser irradiation device 13 are arranged so as to sandwich the flip chip 4 as described above, first, the gas heater 16 is emitted from the hot gas heater 11 in the direction of the flip chip 4, and the L
When the glass constituting the CD glass substrate 1 is preheated to a degree that does not cause thermal shock, and then the laser beam 17 is irradiated from the irradiation unit 14 of the YAG laser irradiation device 13 as shown in FIG. The light 17 passes through the LCD glass substrate 1 and reaches the solder pan 1 of the flip chip 4.
3, the solder bumps 3 and the preliminary solder on the LCD glass substrate 1 are directly heated and melted by the laser beam 17, and the flip chip 4 is connected (bonded) to the LCD glass substrate 1.
このように構成した実施例にあっては、上述したように
’１’ Ａ Ｇレーザ照射装置１３のレーザ光１７を用
いるようにしであることから、照射領域を正確に設定で
き、すなわち！ヒ・要なはんだパン１３部分のみの加熱
を実現でき、フリップチップ４の周囲への熱影響を低く
押さ疋ろことがてきる。In the embodiment configured in this way, since the laser beam 17 of the '1' AG laser irradiation device 13 is used as described above, the irradiation area can be set accurately, that is! H. It is possible to heat only the essential part of the solder pan 13, and the influence of heat on the surroundings of the flip chip 4 can be kept low.
また、ＹＡＧレーザ照射装置１３のレーザ光１７はＬＣ
Ｄガラス基板１を透過してしまうのて゛ＬＣＤガラス基
板１をほとんど加熱することがなく、これによってもフ
リップチップ４の周囲Ｉ＼のはんだバンプ３部分の加熱
による熱影響を低く押さえることができる。In addition, the laser beam 17 of the YAG laser irradiation device 13 is an LC
Since it passes through the D glass substrate 1, the LCD glass substrate 1 is hardly heated, and this also makes it possible to suppress the thermal influence caused by heating of the solder bump 3 portion around the flip chip 4.
また、Ｙ Ａ Ｇレーザ照射装置１３はそのエネ・ルギ
密度を高くすることができるので、はんだ１；目すに要
する時間が例えば５秒以内の短時間で済む。Further, since the YAG laser irradiation device 13 can increase its energy density, the time required for soldering 1 to 1 is short, for example, within 5 seconds.
また、このように短時間て接続作業をおこなえることか
ら、ＬＣＤガラス基板１における熱（云導（二よるフリ
ップチップ４の周囲Ｉ＼の熱７） Ｗを低く押さえるこ
とができる。Furthermore, since the connection work can be carried out in such a short time, the heat (heat 7 around the flip chip 4) in the LCD glass substrate 1 can be kept low.
また、この実施例ではホットガスヒータｉ ｉ ｒ’；
’ら放出されるガス１６にチッ素、−酸化炭素等の不活
性ガスを用いることができ、このような不活性ガスを用
いた場合にはフラックスを用いずにはんだ付けをおこな
うことかて′きる。In addition, in this embodiment, the hot gas heater i i r';
An inert gas such as nitrogen or carbon oxide can be used for the gas 16 released from the solder, and if such an inert gas is used, it is possible to solder without using flux. Wear.
また、この実施例ではホットガスヒータ１１から放出さ
れるガス１６の温度はｌ Ｉ （１°Ｃ程度に設定しで
あることから、ＬＣＤガラス基板１上の液晶に熱損傷を
与えることなく、ＬＣＤガラス基板１を予備加熱するこ
とができる。In addition, in this embodiment, the temperature of the gas 16 released from the hot gas heater 11 is set to approximately 1°C, so that the temperature of the gas 16 released from the hot gas heater 11 is set to approximately 1°C, so that the temperature of the gas 16 released from the hot gas heater 11 is set to about 1°C, so that the temperature of the gas 16 released from the hot gas heater 11 is set to about 1°C. The substrate 1 can be preheated.
また、上記したようにはんだパン１３部分の加熱による
フリップチップ４の周囲への熱影響を低く押さえること
ができることと、ホットガスヒータ１１による予備加熱
をＬＣＤガラス基板１に具備されろ液晶の熱損傷を生じ
ない程度に低い温度で実施することから、このような接
続作業に際して、フリップチップ４の周囲に、加熱から
保護するための冷却装置を要することがない。Further, as mentioned above, the thermal influence on the surroundings of the flip chip 4 due to heating of the solder pan 13 can be suppressed to a low level, and the LCD glass substrate 1 is provided with preheating by the hot gas heater 11 to prevent thermal damage to the liquid crystal. Since this is carried out at a temperature low enough to prevent heat generation, there is no need for a cooling device around the flip chip 4 to protect it from heating during such connection work.
なお、上記実施例では回路基板としてＬＣＤガラス基板
１を挙げたが、本発明はこれに限定されず、ＬＣＤガラ
ス基板１の代わりにポリイミドなどのフレキシブル基板
、すなわちプラスチックＬＣＤを配置してフリップチッ
プ４の実装をおこなうことも可能である。Although the LCD glass substrate 1 is used as the circuit board in the above embodiment, the present invention is not limited thereto, and instead of the LCD glass substrate 1, a flexible substrate such as polyimide, that is, a plastic LCD is arranged, and the flip chip 4 It is also possible to implement
〈発明の効果〉
本発明のフリップチップの実装方法は上記のように構成
しであることがら、フリップチップの接続作業に際して
フリップチップの周囲に対する熱の影響を抑制でき、し
たがって、従来のようなフリップチップの周囲を加熱保
護する冷却装置を要することがなく、接続作業を簡単に
おこなうことができて製作費を低減させることができ、
また短時間でフリップチップと回路基板との接続をおこ
なうことができ、これによって従来に比べて作業能率を
向上させることができる効果がある。<Effects of the Invention> Since the flip-chip mounting method of the present invention is configured as described above, it is possible to suppress the influence of heat on the surroundings of the flip-chip during the flip-chip connection work, and therefore There is no need for a cooling device to heat and protect the area around the chip, making connection work easier and reducing production costs.
Furthermore, it is possible to connect the flip chip and the circuit board in a short time, which has the effect of improving work efficiency compared to the conventional method.
第１図は本発明のフリップチップの実装方法の一実施例
を示す説明図、第２図および第３図はそれぞれ従来のフ
リップチップの実装方法を例示する説明図である。
１・・・・・・ＬＣＤガラス基板（回路基板）、２・・
・・・一方の面、３・・・・・・はんだバンプ、４・・
・・・・フリップチップ、１１・・・・・・ホットガス
ヒータ、１２・・・・・・他方の面、１３・・・・・・
ＹＡＧレーザ照射装置、１４・・・・・・照射部、１５
・・・・・・吐出口、１６・・・・・ガス、１７・・・
・・・レーザ光。
第１図
１７：レーザ°゛えFIG. 1 is an explanatory diagram showing one embodiment of the flip chip mounting method of the present invention, and FIGS. 2 and 3 are explanatory diagrams each illustrating a conventional flip chip mounting method. 1...LCD glass substrate (circuit board), 2...
...One side, 3... Solder bumps, 4...
...Flip chip, 11... Hot gas heater, 12... Other side, 13...
YAG laser irradiation device, 14... Irradiation section, 15
...Discharge port, 16...Gas, 17...
...Laser light. Figure 1 17: Laser
Claims (2)
ップチップの実装方法において、上記回路基板の一方の
面にフリップチップを配置し、回路基板の他方の面側に
ＹＡＧレーザ照射装置を配置し、このＹＡＧレーザ照射
装置のレーザ光を上記回路基板を透過させて上記フリッ
プチップのはんだバンプ部分に与え、このはんだバンプ
部分を溶融させて該フリップチップを当該回路基板に接
続することを特徴とするフリップチップの実装方法。(1) In a flip chip mounting method in which a flip chip is soldered to a circuit board, a flip chip is placed on one side of the circuit board, a YAG laser irradiation device is placed on the other side of the circuit board, and this A flip chip characterized in that a laser beam from a YAG laser irradiation device is transmitted through the circuit board and applied to the solder bump portion of the flip chip to melt the solder bump portion and connect the flip chip to the circuit board. How to implement.
加熱用のホットガスヒータを配置し、このホットガスヒ
ータによつて上記フリップチップを、そのはんだバンプ
が溶融しない十分に低い温度で予備加熱することを特徴
とする特許請求の範囲第（１）項記載のフリップチップ
の実装方法。(2) A hot gas heater for preheating the flip chip is placed on one side of the circuit board, and the hot gas heater preheats the flip chip at a temperature low enough to prevent its solder bumps from melting. A flip-chip mounting method according to claim (1), characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61134950A JPH0630365B2 (en) | 1986-06-12 | 1986-06-12 | How to mount a flip chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61134950A JPH0630365B2 (en) | 1986-06-12 | 1986-06-12 | How to mount a flip chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62291934A true JPS62291934A (en) | 1987-12-18 |
| JPH0630365B2 JPH0630365B2 (en) | 1994-04-20 |
Family
ID=15140352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61134950A Expired - Fee Related JPH0630365B2 (en) | 1986-06-12 | 1986-06-12 | How to mount a flip chip |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0630365B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284998B1 (en) | 1998-06-12 | 2001-09-04 | Visteon Global Technologies, Inc. | Method for laser soldering a three dimensional component |
| US7816179B2 (en) * | 2005-08-11 | 2010-10-19 | Samsung Techwin Co., Ltd. | Method and apparatus for flip-chip bonding |
| WO2012128341A1 (en) * | 2011-03-24 | 2012-09-27 | 三洋電機株式会社 | Solar cell module and method for producing same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132275A (en) * | 1974-09-13 | 1976-03-18 | Hitachi Ltd |
-
1986
- 1986-06-12 JP JP61134950A patent/JPH0630365B2/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5132275A (en) * | 1974-09-13 | 1976-03-18 | Hitachi Ltd |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6284998B1 (en) | 1998-06-12 | 2001-09-04 | Visteon Global Technologies, Inc. | Method for laser soldering a three dimensional component |
| US7816179B2 (en) * | 2005-08-11 | 2010-10-19 | Samsung Techwin Co., Ltd. | Method and apparatus for flip-chip bonding |
| WO2012128341A1 (en) * | 2011-03-24 | 2012-09-27 | 三洋電機株式会社 | Solar cell module and method for producing same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0630365B2 (en) | 1994-04-20 |
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