JPS6228585B2 - - Google Patents
Info
- Publication number
- JPS6228585B2 JPS6228585B2 JP10599883A JP10599883A JPS6228585B2 JP S6228585 B2 JPS6228585 B2 JP S6228585B2 JP 10599883 A JP10599883 A JP 10599883A JP 10599883 A JP10599883 A JP 10599883A JP S6228585 B2 JPS6228585 B2 JP S6228585B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- sio
- sample
- polycrystalline
- trapping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005684 electric field Effects 0.000 claims description 27
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 26
- 239000003990 capacitor Substances 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 230000001590 oxidative effect Effects 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 32
- 239000000758 substrate Substances 0.000 description 17
- 230000000694 effects Effects 0.000 description 15
- 239000012212 insulator Substances 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 12
- 238000010893 electron trap Methods 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000006870 function Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000005264 electron capture Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 230000002000 scavenging effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Landscapes
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10599883A JPS59134865A (ja) | 1983-06-15 | 1983-06-15 | 高電界コンデンサ構造体 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10599883A JPS59134865A (ja) | 1983-06-15 | 1983-06-15 | 高電界コンデンサ構造体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59134865A JPS59134865A (ja) | 1984-08-02 |
| JPS6228585B2 true JPS6228585B2 (enrdf_load_stackoverflow) | 1987-06-22 |
Family
ID=14422373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10599883A Granted JPS59134865A (ja) | 1983-06-15 | 1983-06-15 | 高電界コンデンサ構造体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59134865A (enrdf_load_stackoverflow) |
-
1983
- 1983-06-15 JP JP10599883A patent/JPS59134865A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59134865A (ja) | 1984-08-02 |
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